JP2012009425A - 蓄電装置及びその作製方法 - Google Patents
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- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
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- H—ELECTRICITY
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- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/66—Current collectors
- H01G11/70—Current collectors characterised by their structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/74—Terminals, e.g. extensions of current collectors
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- H—ELECTRICITY
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- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/84—Processes for the manufacture of hybrid or EDL capacitors, or components thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/84—Processes for the manufacture of hybrid or EDL capacitors, or components thereof
- H01G11/86—Processes for the manufacture of hybrid or EDL capacitors, or components thereof specially adapted for electrodes
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- H—ELECTRICITY
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- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
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- H—ELECTRICITY
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- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
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- H—ELECTRICITY
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- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/30—Electrodes characterised by their material
- H01G11/50—Electrodes characterised by their material specially adapted for lithium-ion capacitors, e.g. for lithium-doping or for intercalation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/13—Energy storage using capacitors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/43—Electric condenser making
Abstract
【解決手段】集電体上に、辺縁部を有する金属層を形成し、集電体及び金属層上に、シリコンを含む堆積性ガスを用いて加熱する低圧化学蒸着(LPCVD:Low Pressure Chemical vapor deposition)法により、シリコンウィスカを含む結晶性シリコン層を活物質層として形成する蓄電電池用の電極の作製方法である。また、その電極を用いた蓄電装置である。
【選択図】図1
Description
本実施の形態では、本発明の一態様である蓄電装置の電極及びその作製方法について、図1及び図2を用いて説明する。
シリコンウィスカを含む結晶性シリコン層を、蓄電装置の電極の一部に用いる場合の効果を確認した。具体的には、陰極の活物質層としてシリコンウィスカを含む結晶性シリコン層を用いた蓄電装置(実験例1)と、陰極の活物質層として平坦な結晶性シリコン層を用いた蓄電装置(比較例)とを用意して、これらの特性を比較した。
本実験例においては、互いに離間して配置された複数の矩形状の金属層上に、LPCVD法を用いてシリコン層を成膜した場合の、シリコンウィスカの成長について示す。
本実施の形態では、蓄電装置の構造について、図3を用いて説明する。
本実施の形態では、本発明の一態様に係る二次電池を、無線給電システム(以下、RF給電システムと呼ぶ。)に用いた場合の一例を、図5及び図6のブロック図を用いて説明する。なお、各ブロック図では、受電装置および給電装置内の構成要素を機能ごとに分類し、互いに独立したブロックとして示しているが、実際の構成要素は機能ごとに完全に切り分けることが困難であり、一つの構成要素が複数の機能に係わることもあり得る。
102 金属層
102a 金属層
103 活物質層
105 領域
107a 混合領域
107b 混合領域
109a 金属酸化物層
109b 金属酸化物層
111 集電体
113 シリコンウィスカ
115 基板
151 蓄電装置
153 外装部材
155 蓄電セル
157 端子部
159 端子部
163 負極
165 正極
167 セパレータ
169 電解質
171 負極集電体
173 負極活物質層
175 正極集電体
177 正極活物質層
501 車椅子
503 座部
507 フットレスト
509 アームレスト
511 ハンドル
513 コントローラ
515 フレーム
517 前輪
519 後輪
521 駆動部
523 制御部
600 受電装置
601 受電装置部
602 受電装置用アンテナ回路
603 信号処理回路
604 二次電池
605 整流回路
606 変調回路
607 電源回路
610 電源負荷部
700 給電装置
701 給電装置用アンテナ回路
702 信号処理回路
703 整流回路
704 変調回路
705 復調回路
706 発振回路
Claims (7)
- 第1の金属元素を含む集電体上に、前記第1の金属元素とは異なる第2の金属元素を含む金属層を形成し、
前記金属層をエッチングして、前記金属層のパターンを形成し、
エッチング後の前記金属層上に、シリコンを含む堆積性ガスを原料に用い、低圧化学蒸着法によりシリコンウィスカを含む活物質層を形成する蓄電装置の作製方法。 - 第1の金属元素を含む集電体上に、前記第1の金属元素とは異なる第2の金属元素を含む金属層を形成し、
前記金属層をエッチングして、互いに離間して配置された複数の矩形状の金属層とし、
エッチング後の前記金属層上に、シリコンを含む堆積性ガスを原料に用い、低圧化学蒸着法によりシリコンウィスカを含む活物質層を形成する蓄電装置の作製方法。 - 前記第2の金属元素として、シリサイドを形成する金属元素を用いる請求項1または2に記載の蓄電装置の作製方法。
- 前記第2の金属元素は、ジルコニウム、チタン、ハフニウム、バナジウム、ニオブ、タンタル、クロム、モリブデン、タングステン、コバルト、またはニッケルから選択される一以上の金属元素である請求項1または2に記載の蓄電装置の作製方法。
- 第1の金属元素を含む集電体と、
前記集電体上に形成され、前記第1の金属元素とは異なる第2の金属元素を含む矩形状の金属層と、
前記金属層及び前記集電体上に設けられた、シリコンウィスカを含む活物質層と、を有する蓄電装置。 - 前記シリコンウィスカは、前記金属層の辺縁部と重畳する領域において、高密度に配置される請求項5に記載の蓄電装置。
- 前記活物質層と前記金属層との間に、シリコンと前記第1の金属元素を含む第1の混合領域を有し、
前記活物質層と前記集電体との間に、シリコンと前記第2の金属元素とを含む第2の混合領域を有する請求項5または6に記載の蓄電装置。
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Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101669309B1 (ko) * | 2009-08-26 | 2016-10-25 | 도판 인사츠 가부시키가이샤 | 비접촉 통신 매체 |
KR101838627B1 (ko) | 2010-05-28 | 2018-03-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 축전 장치 및 그 제작 방법 |
WO2011158722A1 (en) | 2010-06-18 | 2011-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and manufacturing method thereof |
US9076909B2 (en) | 2010-06-18 | 2015-07-07 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method for manufacturing the same |
JP5841752B2 (ja) | 2010-07-02 | 2016-01-13 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9543577B2 (en) | 2010-12-16 | 2017-01-10 | Semiconductor Energy Laboratory Co., Ltd. | Active material, electrode including the active material and manufacturing method thereof, and secondary battery |
JP6035054B2 (ja) | 2011-06-24 | 2016-11-30 | 株式会社半導体エネルギー研究所 | 蓄電装置の電極の作製方法 |
JP6025284B2 (ja) | 2011-08-19 | 2016-11-16 | 株式会社半導体エネルギー研究所 | 蓄電装置用の電極及び蓄電装置 |
WO2013027561A1 (en) | 2011-08-19 | 2013-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing graphene-coated object, negative electrode of secondary battery including graphene-coated object, and secondary battery including the negative electrode |
KR20130024769A (ko) | 2011-08-30 | 2013-03-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 축전 장치 |
JP6034621B2 (ja) | 2011-09-02 | 2016-11-30 | 株式会社半導体エネルギー研究所 | 蓄電装置の電極および蓄電装置 |
JP2013069418A (ja) | 2011-09-20 | 2013-04-18 | Semiconductor Energy Lab Co Ltd | リチウム二次電池およびその製造方法 |
JP6050106B2 (ja) | 2011-12-21 | 2016-12-21 | 株式会社半導体エネルギー研究所 | 非水二次電池用シリコン負極の製造方法 |
KR102460298B1 (ko) | 2013-04-19 | 2022-10-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 이차 전지 및 그 제작 방법 |
JP2016027562A (ja) | 2014-07-04 | 2016-02-18 | 株式会社半導体エネルギー研究所 | 二次電池の作製方法及び製造装置 |
JP6890375B2 (ja) | 2014-10-21 | 2021-06-18 | 株式会社半導体エネルギー研究所 | 装置 |
US10403879B2 (en) | 2014-12-25 | 2019-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Electrolytic solution, secondary battery, electronic device, and method of manufacturing electrode |
JP6723023B2 (ja) | 2015-02-24 | 2020-07-15 | 株式会社半導体エネルギー研究所 | 二次電池用電極の製造方法 |
US10193139B1 (en) | 2018-02-01 | 2019-01-29 | The Regents Of The University Of California | Redox and ion-adsorbtion electrodes and energy storage devices |
KR102326585B1 (ko) * | 2020-01-31 | 2021-11-16 | 경상국립대학교산학협력단 | 이차전지용 전극 및 그의 제조방법 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005116509A (ja) * | 2003-09-18 | 2005-04-28 | Matsushita Electric Ind Co Ltd | 非水電解質二次電池用負極とこれを用いた非水電解質二次電池 |
US20090042102A1 (en) * | 2007-08-10 | 2009-02-12 | Yi Cui | Nanowire Battery Methods and Arrangements |
JP2009099512A (ja) * | 2006-12-27 | 2009-05-07 | Panasonic Corp | 電極用集電体 |
JP2010262752A (ja) * | 2009-04-30 | 2010-11-18 | Furukawa Electric Co Ltd:The | リチウムイオン二次電池用の負極、それを用いたリチウムイオン二次電池、リチウムイオン二次電池用の負極の製造方法 |
JP2012018919A (ja) * | 2010-06-11 | 2012-01-26 | Semiconductor Energy Lab Co Ltd | 蓄電装置 |
JP2012526364A (ja) * | 2009-05-07 | 2012-10-25 | アンプリウス、インコーポレイテッド | 再充電可能電池用のナノ構造を含む電極 |
Family Cites Families (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1198900A (en) | 1967-10-25 | 1970-07-15 | Hitachi Ltd | Planar Transistor and Method of Making the Same |
US4155781A (en) | 1976-09-03 | 1979-05-22 | Siemens Aktiengesellschaft | Method of manufacturing solar cells, utilizing single-crystal whisker growth |
US5338625A (en) | 1992-07-29 | 1994-08-16 | Martin Marietta Energy Systems, Inc. | Thin film battery and method for making same |
RU2099808C1 (ru) | 1996-04-01 | 1997-12-20 | Евгений Инвиевич Гиваргизов | Способ выращивания ориентированных систем нитевидных кристаллов и устройство для его осуществления (варианты) |
US20020168574A1 (en) | 1997-06-27 | 2002-11-14 | Soon-Ho Ahn | Lithium ion secondary battery and manufacturing method of the same |
KR100487458B1 (ko) | 1999-10-22 | 2005-05-06 | 산요덴키가부시키가이샤 | 리튬 2차 전지용 전극의 제조 방법 |
AU7951300A (en) | 1999-10-22 | 2001-04-30 | Sanyo Electric Co., Ltd. | Method for producing material for electrode for lithium cell |
KR100500344B1 (ko) | 1999-10-22 | 2005-07-12 | 산요덴키가부시키가이샤 | 리튬 전지용 전극 및 리튬 2차전지 |
AU7951100A (en) | 1999-10-22 | 2001-04-30 | Sanyo Electric Co., Ltd. | Electrode for lithium secondary cell and lithium secondary cell |
AU7951000A (en) | 1999-10-22 | 2001-05-08 | Sanyo Electric Co., Ltd. | Electrode for lithium cell and lithium secondary cell |
JP2002083594A (ja) | 1999-10-22 | 2002-03-22 | Sanyo Electric Co Ltd | リチウム電池用電極並びにこれを用いたリチウム電池及びリチウム二次電池 |
EP1244163A4 (en) | 1999-10-22 | 2007-10-31 | Sanyo Electric Co | ELECTRODE FOR LITHIUM ACCUMULATOR AND LITHIUM ACCUMULATOR |
JP2001210315A (ja) | 2000-01-25 | 2001-08-03 | Sanyo Electric Co Ltd | リチウム二次電池用電極及びこれを用いたリチウム二次電池 |
US6844113B2 (en) | 2001-04-13 | 2005-01-18 | Sanyo Electric Co., Ltd. | Electrode for lithium secondary battery and method for producing the same |
JP2003246700A (ja) | 2002-02-22 | 2003-09-02 | Japan Science & Technology Corp | シリコンナノニードルの製法 |
JP4140765B2 (ja) | 2002-09-19 | 2008-08-27 | コバレントマテリアル株式会社 | 針状シリコン結晶およびその製造方法 |
US7015496B2 (en) | 2002-12-27 | 2006-03-21 | Semiconductor Energy Laboratory Co., Ltd. | Field emission device and manufacturing method thereof |
JP2004281317A (ja) | 2003-03-18 | 2004-10-07 | Matsushita Electric Ind Co Ltd | 非水電解質二次電池用電極材料とその製造方法、ならびにそれを用いた非水電解質二次電池 |
US9614214B2 (en) | 2004-12-16 | 2017-04-04 | Lg Chem, Ltd. | Method for improvement of performance of si thin film anode for lithium rechargeable battery |
KR101049683B1 (ko) | 2006-02-14 | 2011-07-14 | 파나소닉 주식회사 | 비수전해질 이차전지용 전극과 그 제조 방법 및 비수전해질 이차전지용 전극을 갖춘 비수 전해질 이차전지 |
US7964307B2 (en) | 2006-07-24 | 2011-06-21 | Panasonic Corporation | Negative electrode for lithium ion secondary battery, method for producing the same, and lithium ion secondary battery |
WO2008024783A2 (en) * | 2006-08-24 | 2008-02-28 | The Regents Of The University Of California | Lithographically patterned nanowire electrodeposition |
JP5272297B2 (ja) | 2006-10-17 | 2013-08-28 | 日産自動車株式会社 | 電池用電極 |
KR101109285B1 (ko) | 2006-10-19 | 2012-01-31 | 파나소닉 주식회사 | 비수 전해질 2차 전지와 비수 전해질 2차 전지용 음극의제조 방법 |
US8277967B2 (en) | 2007-01-26 | 2012-10-02 | Panasonic Corporation | Energy device, method for manufacturing the same, and apparatus including the same |
JP2008269827A (ja) * | 2007-04-17 | 2008-11-06 | Matsushita Electric Ind Co Ltd | 電気化学素子の電極材料およびその製造方法並びにそれを用いた電極極板および電気化学素子 |
JP5169156B2 (ja) | 2007-11-09 | 2013-03-27 | パナソニック株式会社 | 電気化学素子用電極 |
KR100898293B1 (ko) | 2007-11-27 | 2009-05-18 | 삼성에스디아이 주식회사 | 리튬 이차 전지용 음극 활물질 및 이의 제조 방법 |
JP2009134917A (ja) | 2007-11-29 | 2009-06-18 | Panasonic Corp | 非水系二次電池用電極板およびこれを用いた非水系二次電池 |
JP5298609B2 (ja) | 2008-04-08 | 2013-09-25 | ソニー株式会社 | 二次電池用負極および二次電池 |
US20090317726A1 (en) | 2008-04-08 | 2009-12-24 | Sony Corporation | Anode and secondary battery |
JP4427629B2 (ja) | 2008-04-11 | 2010-03-10 | パナソニック株式会社 | エネルギー蓄積デバイス、その製造方法及びそれを搭載した装置 |
US8927156B2 (en) | 2009-02-19 | 2015-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device |
US9061902B2 (en) | 2009-12-18 | 2015-06-23 | The Board Of Trustees Of The Leland Stanford Junior University | Crystalline-amorphous nanowires for battery electrodes |
WO2011136028A1 (en) | 2010-04-28 | 2011-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device and method for manufacturing the same |
US20120003383A1 (en) | 2010-06-30 | 2012-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of energy storage device |
JP6035054B2 (ja) | 2011-06-24 | 2016-11-30 | 株式会社半導体エネルギー研究所 | 蓄電装置の電極の作製方法 |
-
2011
- 2011-05-05 US US13/101,598 patent/US8852294B2/en not_active Expired - Fee Related
- 2011-05-16 KR KR1020110045650A patent/KR101813574B1/ko active IP Right Grant
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005116509A (ja) * | 2003-09-18 | 2005-04-28 | Matsushita Electric Ind Co Ltd | 非水電解質二次電池用負極とこれを用いた非水電解質二次電池 |
JP2009099512A (ja) * | 2006-12-27 | 2009-05-07 | Panasonic Corp | 電極用集電体 |
US20090042102A1 (en) * | 2007-08-10 | 2009-02-12 | Yi Cui | Nanowire Battery Methods and Arrangements |
JP2010262752A (ja) * | 2009-04-30 | 2010-11-18 | Furukawa Electric Co Ltd:The | リチウムイオン二次電池用の負極、それを用いたリチウムイオン二次電池、リチウムイオン二次電池用の負極の製造方法 |
JP2012526364A (ja) * | 2009-05-07 | 2012-10-25 | アンプリウス、インコーポレイテッド | 再充電可能電池用のナノ構造を含む電極 |
JP2012018919A (ja) * | 2010-06-11 | 2012-01-26 | Semiconductor Energy Lab Co Ltd | 蓄電装置 |
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US8852294B2 (en) | 2014-10-07 |
KR101813574B1 (ko) | 2017-12-29 |
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