JP5885940B2 - 蓄電装置の作製方法 - Google Patents
蓄電装置の作製方法 Download PDFInfo
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- JP5885940B2 JP5885940B2 JP2011116719A JP2011116719A JP5885940B2 JP 5885940 B2 JP5885940 B2 JP 5885940B2 JP 2011116719 A JP2011116719 A JP 2011116719A JP 2011116719 A JP2011116719 A JP 2011116719A JP 5885940 B2 JP5885940 B2 JP 5885940B2
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- silicon
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/04—Processes of manufacture in general
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/26—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features
- H01G11/28—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features arranged or disposed on a current collector; Layers or phases between electrodes and current collectors, e.g. adhesives
-
- C—CHEMISTRY; METALLURGY
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Description
本実施の形態では、本発明の一態様である蓄電装置の電極及びその作製方法について、図1及び図2を用いて説明する。
シリコンウィスカを含む結晶性シリコン層を、蓄電装置の電極の一部に用いる場合の効果を確認した。具体的には、負極の活物質層としてシリコンウィスカを含む結晶性シリコン層を用いた蓄電装置(実験例1)と、負極の活物質層として平坦な結晶性シリコン層を用いた蓄電装置(比較例)とを用意して、これらの特性を比較した。
本実験例においては、互いに離間して配置された複数の矩形状の金属層上に、LPCVD法を用いてシリコン層を成膜した場合の、シリコンウィスカの成長について示す。
本実施の形態では、蓄電装置の構造について、図3を用いて説明する。
本実施の形態では、本発明の一態様に係る二次電池を、無線給電システム(以下、RF給電システムと呼ぶ。)に用いた場合の一例を、図5及び図6のブロック図を用いて説明する。なお、各ブロック図では、受電装置および給電装置内の構成要素を機能ごとに分類し、互いに独立したブロックとして示しているが、実際の構成要素は機能ごとに完全に切り分けることが困難であり、一つの構成要素が複数の機能に係わることもあり得る。
102 金属層
102a 金属層
103 活物質層
105 領域
107a 混合領域
107b 混合領域
109a 金属酸化物層
109b 金属酸化物層
111 集電体
113 シリコンウィスカ
115 基板
151 蓄電装置
153 外装部材
155 蓄電セル
157 端子部
159 端子部
163 負極
165 正極
167 セパレータ
169 電解質
171 負極集電体
173 負極活物質層
175 正極集電体
177 正極活物質層
501 車椅子
503 座部
507 フットレスト
509 アームレスト
511 ハンドル
513 コントローラ
515 フレーム
517 前輪
519 後輪
521 駆動部
523 制御部
600 受電装置
601 受電装置部
602 受電装置用アンテナ回路
603 信号処理回路
604 二次電池
605 整流回路
606 変調回路
607 電源回路
610 電源負荷部
700 給電装置
701 給電装置用アンテナ回路
702 信号処理回路
703 整流回路
704 変調回路
705 復調回路
706 発振回路
Claims (1)
- 第1の金属元素を含む集電体上に、前記第1の金属元素とは異なる第2の金属元素を含む金属層であるチタン層を形成し、
前記チタン層をエッチングして、互いに離間して配置された矩形状の複数のチタン層とし、前記複数のチタン層はそれぞれ辺縁部とその他の平面部とを有し、
エッチング後の前記複数のチタン層のそれぞれの辺縁部とその他の平面部上に、シリコンを含む堆積性ガスを原料に用いて、580℃以上650℃未満の加熱をしつつ、低圧化学蒸着法によりシリコンウィスカを含む活物質層を形成し、
前記第2の金属元素として、前記活物質層の結晶成長を促進することができる金属元素を用い、
前記シリコンウィスカは、前記チタン層の辺縁部において、前記チタン層のその他の平面部よりも高密度に形成され、
前記複数のチタン層のいずれか一のチタン層と他の一のチタン層の間には、前記シリコンウィスカが形成されない領域を有することを特徴とする蓄電装置の作製方法。
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2011
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- 2011-05-16 KR KR1020110045650A patent/KR101813574B1/ko active IP Right Grant
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US20110292564A1 (en) | 2011-12-01 |
KR101813574B1 (ko) | 2017-12-29 |
KR20110131092A (ko) | 2011-12-06 |
US8852294B2 (en) | 2014-10-07 |
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