JP5885940B2 - 蓄電装置の作製方法 - Google Patents

蓄電装置の作製方法 Download PDF

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Publication number
JP5885940B2
JP5885940B2 JP2011116719A JP2011116719A JP5885940B2 JP 5885940 B2 JP5885940 B2 JP 5885940B2 JP 2011116719 A JP2011116719 A JP 2011116719A JP 2011116719 A JP2011116719 A JP 2011116719A JP 5885940 B2 JP5885940 B2 JP 5885940B2
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JP
Japan
Prior art keywords
layer
active material
metal
silicon
current collector
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Expired - Fee Related
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JP2011116719A
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English (en)
Japanese (ja)
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JP2012009425A (ja
JP2012009425A5 (enExample
Inventor
山崎 舜平
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2011116719A priority Critical patent/JP5885940B2/ja
Publication of JP2012009425A publication Critical patent/JP2012009425A/ja
Publication of JP2012009425A5 publication Critical patent/JP2012009425A5/ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/04—Processes of manufacture in general
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/26—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features
    • H01G11/28—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features arranged or disposed on a current collector; Layers or phases between electrodes and current collectors, e.g. adhesives
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/10—Multiple hybrid or EDL capacitors, e.g. arrays or modules
    • H01G11/12—Stacked hybrid or EDL capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/26—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/30—Electrodes characterised by their material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/66—Current collectors
    • H01G11/70—Current collectors characterised by their structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/74—Terminals, e.g. extensions of current collectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/84—Processes for the manufacture of hybrid or EDL capacitors, or components thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/84—Processes for the manufacture of hybrid or EDL capacitors, or components thereof
    • H01G11/86—Processes for the manufacture of hybrid or EDL capacitors, or components thereof specially adapted for electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/36—Selection of substances as active materials, active masses, active liquids
    • H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/30—Electrodes characterised by their material
    • H01G11/50—Electrodes characterised by their material specially adapted for lithium-ion capacitors, e.g. for lithium-doping or for intercalation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/13—Energy storage using capacitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/43—Electric condenser making

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electrochemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Cell Electrode Carriers And Collectors (AREA)
  • Electric Double-Layer Capacitors Or The Like (AREA)
JP2011116719A 2010-05-28 2011-05-25 蓄電装置の作製方法 Expired - Fee Related JP5885940B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011116719A JP5885940B2 (ja) 2010-05-28 2011-05-25 蓄電装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010122770 2010-05-28
JP2010122770 2010-05-28
JP2011116719A JP5885940B2 (ja) 2010-05-28 2011-05-25 蓄電装置の作製方法

Publications (3)

Publication Number Publication Date
JP2012009425A JP2012009425A (ja) 2012-01-12
JP2012009425A5 JP2012009425A5 (enExample) 2014-07-03
JP5885940B2 true JP5885940B2 (ja) 2016-03-16

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Country Status (3)

Country Link
US (1) US8852294B2 (enExample)
JP (1) JP5885940B2 (enExample)
KR (1) KR101813574B1 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8653636B2 (en) * 2009-08-26 2014-02-18 Toppan Printing Co., Ltd. Contactless communication medium
KR101838627B1 (ko) 2010-05-28 2018-03-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 축전 장치 및 그 제작 방법
US9076909B2 (en) 2010-06-18 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for manufacturing the same
WO2011158722A1 (en) 2010-06-18 2011-12-22 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
JP5841752B2 (ja) 2010-07-02 2016-01-13 株式会社半導体エネルギー研究所 半導体装置
US9543577B2 (en) 2010-12-16 2017-01-10 Semiconductor Energy Laboratory Co., Ltd. Active material, electrode including the active material and manufacturing method thereof, and secondary battery
JP6035054B2 (ja) 2011-06-24 2016-11-30 株式会社半導体エネルギー研究所 蓄電装置の電極の作製方法
WO2013027561A1 (en) 2011-08-19 2013-02-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing graphene-coated object, negative electrode of secondary battery including graphene-coated object, and secondary battery including the negative electrode
JP6025284B2 (ja) 2011-08-19 2016-11-16 株式会社半導体エネルギー研究所 蓄電装置用の電極及び蓄電装置
KR20130024769A (ko) 2011-08-30 2013-03-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 축전 장치
JP6034621B2 (ja) 2011-09-02 2016-11-30 株式会社半導体エネルギー研究所 蓄電装置の電極および蓄電装置
JP2013069418A (ja) 2011-09-20 2013-04-18 Semiconductor Energy Lab Co Ltd リチウム二次電池およびその製造方法
JP6050106B2 (ja) 2011-12-21 2016-12-21 株式会社半導体エネルギー研究所 非水二次電池用シリコン負極の製造方法
KR102297634B1 (ko) 2013-04-19 2021-09-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 이차 전지 및 그 제작 방법
JP2016027562A (ja) 2014-07-04 2016-02-18 株式会社半導体エネルギー研究所 二次電池の作製方法及び製造装置
JP6890375B2 (ja) 2014-10-21 2021-06-18 株式会社半導体エネルギー研究所 装置
US10403879B2 (en) 2014-12-25 2019-09-03 Semiconductor Energy Laboratory Co., Ltd. Electrolytic solution, secondary battery, electronic device, and method of manufacturing electrode
JP6723023B2 (ja) 2015-02-24 2020-07-15 株式会社半導体エネルギー研究所 二次電池用電極の製造方法
US10193139B1 (en) 2018-02-01 2019-01-29 The Regents Of The University Of California Redox and ion-adsorbtion electrodes and energy storage devices
US12334543B2 (en) * 2019-03-29 2025-06-17 Industry-University Cooperation Foundation Hanyang University Erica Campus Electrode structure and manufacturing method thereof
KR102326585B1 (ko) * 2020-01-31 2021-11-16 경상국립대학교산학협력단 이차전지용 전극 및 그의 제조방법

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1198900A (en) 1967-10-25 1970-07-15 Hitachi Ltd Planar Transistor and Method of Making the Same
US4155781A (en) 1976-09-03 1979-05-22 Siemens Aktiengesellschaft Method of manufacturing solar cells, utilizing single-crystal whisker growth
US5338625A (en) 1992-07-29 1994-08-16 Martin Marietta Energy Systems, Inc. Thin film battery and method for making same
RU2099808C1 (ru) 1996-04-01 1997-12-20 Евгений Инвиевич Гиваргизов Способ выращивания ориентированных систем нитевидных кристаллов и устройство для его осуществления (варианты)
US20020168574A1 (en) 1997-06-27 2002-11-14 Soon-Ho Ahn Lithium ion secondary battery and manufacturing method of the same
US7241533B1 (en) 1999-10-22 2007-07-10 Sanyo Electric Co., Ltd. Electrode for rechargeable lithium battery and rechargeable lithium battery
CN1257567C (zh) 1999-10-22 2006-05-24 三洋电机株式会社 锂电池和可再充电锂电池中用的电极
JP3733070B2 (ja) 1999-10-22 2006-01-11 三洋電機株式会社 リチウム二次電池用電極及びリチウム二次電池
JP3702223B2 (ja) 1999-10-22 2005-10-05 三洋電機株式会社 リチウム電池用電極材料の製造方法
CN1189958C (zh) 1999-10-22 2005-02-16 三洋电机株式会社 可充电锂电池电极的制造方法
JP2002083594A (ja) 1999-10-22 2002-03-22 Sanyo Electric Co Ltd リチウム電池用電極並びにこれを用いたリチウム電池及びリチウム二次電池
WO2001031720A1 (fr) 1999-10-22 2001-05-03 Sanyo Electric Co., Ltd. Electrode pour pile au lithium et accumulateur au lithium
JP2001210315A (ja) 2000-01-25 2001-08-03 Sanyo Electric Co Ltd リチウム二次電池用電極及びこれを用いたリチウム二次電池
US6844113B2 (en) 2001-04-13 2005-01-18 Sanyo Electric Co., Ltd. Electrode for lithium secondary battery and method for producing the same
JP2003246700A (ja) 2002-02-22 2003-09-02 Japan Science & Technology Corp シリコンナノニードルの製法
JP4140765B2 (ja) 2002-09-19 2008-08-27 コバレントマテリアル株式会社 針状シリコン結晶およびその製造方法
US7015496B2 (en) 2002-12-27 2006-03-21 Semiconductor Energy Laboratory Co., Ltd. Field emission device and manufacturing method thereof
JP2004281317A (ja) 2003-03-18 2004-10-07 Matsushita Electric Ind Co Ltd 非水電解質二次電池用電極材料とその製造方法、ならびにそれを用いた非水電解質二次電池
JP2005116509A (ja) * 2003-09-18 2005-04-28 Matsushita Electric Ind Co Ltd 非水電解質二次電池用負極とこれを用いた非水電解質二次電池
US9614214B2 (en) 2004-12-16 2017-04-04 Lg Chem, Ltd. Method for improvement of performance of si thin film anode for lithium rechargeable battery
KR101049683B1 (ko) 2006-02-14 2011-07-14 파나소닉 주식회사 비수전해질 이차전지용 전극과 그 제조 방법 및 비수전해질 이차전지용 전극을 갖춘 비수 전해질 이차전지
US7964307B2 (en) 2006-07-24 2011-06-21 Panasonic Corporation Negative electrode for lithium ion secondary battery, method for producing the same, and lithium ion secondary battery
WO2008024783A2 (en) * 2006-08-24 2008-02-28 The Regents Of The University Of California Lithographically patterned nanowire electrodeposition
JP5272297B2 (ja) 2006-10-17 2013-08-28 日産自動車株式会社 電池用電極
CN101356669B (zh) 2006-10-19 2011-04-06 松下电器产业株式会社 非水电解质二次电池和非水电解质二次电池用负极的制造方法
CN101507022B (zh) * 2006-12-27 2012-02-29 松下电器产业株式会社 电池、电极以及它们所使用的集电体
WO2008090876A1 (ja) 2007-01-26 2008-07-31 Panasonic Corporation エネルギーデバイス、その製造方法及びそれを搭載した装置
JP2008269827A (ja) * 2007-04-17 2008-11-06 Matsushita Electric Ind Co Ltd 電気化学素子の電極材料およびその製造方法並びにそれを用いた電極極板および電気化学素子
US7816031B2 (en) * 2007-08-10 2010-10-19 The Board Of Trustees Of The Leland Stanford Junior University Nanowire battery methods and arrangements
JP5169156B2 (ja) 2007-11-09 2013-03-27 パナソニック株式会社 電気化学素子用電極
KR100898293B1 (ko) 2007-11-27 2009-05-18 삼성에스디아이 주식회사 리튬 이차 전지용 음극 활물질 및 이의 제조 방법
JP2009134917A (ja) 2007-11-29 2009-06-18 Panasonic Corp 非水系二次電池用電極板およびこれを用いた非水系二次電池
JP5298609B2 (ja) 2008-04-08 2013-09-25 ソニー株式会社 二次電池用負極および二次電池
US20090317726A1 (en) 2008-04-08 2009-12-24 Sony Corporation Anode and secondary battery
US9362563B2 (en) 2008-04-11 2016-06-07 Panasonic Intellectual Property Management Co., Ltd. Energy storage device, method for manufacturing the same, and apparatus including the same
US8927156B2 (en) 2009-02-19 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Power storage device
JP2010262752A (ja) 2009-04-30 2010-11-18 Furukawa Electric Co Ltd:The リチウムイオン二次電池用の負極、それを用いたリチウムイオン二次電池、リチウムイオン二次電池用の負極の製造方法
US20100285358A1 (en) * 2009-05-07 2010-11-11 Amprius, Inc. Electrode Including Nanostructures for Rechargeable Cells
US9061902B2 (en) 2009-12-18 2015-06-23 The Board Of Trustees Of The Leland Stanford Junior University Crystalline-amorphous nanowires for battery electrodes
WO2011136028A1 (en) 2010-04-28 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Power storage device and method for manufacturing the same
WO2011155397A1 (en) * 2010-06-11 2011-12-15 Semiconductor Energy Laboratory Co., Ltd. Power storage device
KR101830194B1 (ko) 2010-06-30 2018-02-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 축전 장치의 제작 방법
JP6035054B2 (ja) 2011-06-24 2016-11-30 株式会社半導体エネルギー研究所 蓄電装置の電極の作製方法

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Publication number Publication date
US8852294B2 (en) 2014-10-07
KR101813574B1 (ko) 2017-12-29
JP2012009425A (ja) 2012-01-12
KR20110131092A (ko) 2011-12-06
US20110292564A1 (en) 2011-12-01

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