JP4927799B2 - 強誘電体薄膜素子及びその製造方法 - Google Patents
強誘電体薄膜素子及びその製造方法 Download PDFInfo
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- JP4927799B2 JP4927799B2 JP2008219756A JP2008219756A JP4927799B2 JP 4927799 B2 JP4927799 B2 JP 4927799B2 JP 2008219756 A JP2008219756 A JP 2008219756A JP 2008219756 A JP2008219756 A JP 2008219756A JP 4927799 B2 JP4927799 B2 JP 4927799B2
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- 239000010409 thin film Substances 0.000 title claims description 112
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 239000000758 substrate Substances 0.000 claims description 45
- 238000000034 method Methods 0.000 claims description 27
- 238000000151 deposition Methods 0.000 claims description 22
- 239000001301 oxygen Substances 0.000 claims description 16
- 229910052760 oxygen Inorganic materials 0.000 claims description 16
- 230000008021 deposition Effects 0.000 claims description 15
- 229910002367 SrTiO Inorganic materials 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000000919 ceramic Substances 0.000 claims description 5
- 229910004121 SrRuO Inorganic materials 0.000 claims description 3
- 238000011065 in-situ storage Methods 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims 2
- 238000009434 installation Methods 0.000 claims 1
- 230000010287 polarization Effects 0.000 description 12
- -1 oxygen anions Chemical class 0.000 description 8
- 230000003746 surface roughness Effects 0.000 description 8
- 239000010410 layer Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 230000005684 electric field Effects 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical group [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910020684 PbZr Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002017 high-resolution X-ray diffraction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
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- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
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- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Semiconductor Memories (AREA)
- Formation Of Insulating Films (AREA)
- Physical Vapour Deposition (AREA)
- Inorganic Insulating Materials (AREA)
Description
また本発明の方法において、BFO薄膜は、STO基板を550℃ないし650℃に加熱した状態で蒸着されることを特徴とする。
また本発明の方法において、BFO薄膜は、STO基板を570℃に加熱した状態で蒸着されることを特徴とする。
また本発明は、オンアクシススパッタリングによって強誘電体薄膜を蒸着することにより、その蒸着率を顕著に向上させることができる。
更に本発明は、強誘電体薄膜の表面が均一に形成されるので、漏洩電流が顕著に低減し、残留分極が大きくなるという効果がある。
図1(a)は、本発明による強誘電体薄膜素子製造装置の一実施例を図示したものである。強誘電体薄膜素子は、所定の工程によりホルダー10上にSTO基板20を結合する。本実施例では、モリブデン材料からなるホルダー10を使用したが、これに限定されるものではない。SrTiO3(STO)は、高い誘電定数を有する誘電物質であり、基本的に不導体である絶縁物質であり、そのSTO基板20上に導電性物質であるSrRuO3(SRO)薄膜30を蒸着する。SROを蒸着するために、SROシングルターゲットを配置し、Arのような不活性気体と酸素とをチェンバーに注入した状態で同ターゲットを陰極にしてチェンバー内に電位差をかけるとプラズマが形成され、Ar+などがターゲットに入射され、同ターゲットから飛び出したSRO分子が蒸着されてSRO薄膜30が形成される。
20:STO基板
30:SRO薄膜
40:絶縁層
Claims (8)
- SrTiO3(STO)基板上にSrRuO3(SRO)薄膜を蒸着する工程と、
前記蒸着されたSRO薄膜にBiFeO3(BFO)薄膜を蒸着する工程と、
前記BFO薄膜の蒸着後、53.33kPa(400Torr)の酸素圧で一定時間インシチュー方式で熱処理する工程と、
を含み、
前記各薄膜の蒸着が前記STO基板を接地から絶縁した状態で実施されることを特徴とする、強誘電体薄膜素子製造方法。 - 前記SRO薄膜と前記BFO薄膜とを、オンアクシスRFマグネトロンスパッタリングで蒸着させることを特徴とする、請求項1に記載の強誘電体薄膜素子製造方法。
- 前記BFO薄膜を、前記STO基板を550℃ないし650℃に加熱した状態で蒸着させることを特徴とする、請求項1に記載の強誘電体薄膜素子製造方法。
- 前記BFO薄膜を、前記STO基板を570℃に加熱した状態で蒸着させることを特徴とする、請求項3に記載の強誘電体薄膜素子製造方法。
- 前記SRO薄膜は、前記STO基板と前記BFO薄膜との間の格子不整合を減らし、かつ前記強誘電体薄膜素子の下部電極として使用され、その厚さが100nmであることを特徴とする、請求項1に記載の強誘電体薄膜素子製造方法。
- 前記STO基板と接地との絶縁が、前記STO基板が設置されたホルダーと接地との間に設けられたセラミックスからなる絶縁層によってなされることを特徴とする、請求項1に記載の強誘電体薄膜素子製造方法。
- 前記STO基板と接地との絶縁が、前記STO基板が設置されたホルダーと前記STO基板との間に設けられたセラミックスからなる絶縁層によってなされることを特徴とする、請求項1に記載の強誘電体薄膜素子製造方法。
- 請求項1ないし請求項7のいずれか一項に記載の方法によって製造された強誘電体薄膜素子。
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KR20070102747 | 2007-10-11 | ||
KR10-2007-0102747 | 2007-10-11 |
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JP2009094482A JP2009094482A (ja) | 2009-04-30 |
JP4927799B2 true JP4927799B2 (ja) | 2012-05-09 |
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US (1) | US7888138B2 (ja) |
JP (1) | JP4927799B2 (ja) |
KR (1) | KR101003982B1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8400047B2 (en) * | 2009-03-12 | 2013-03-19 | Canon Kabushiki Kaisha | Piezoelectric material, piezoelectric device, and method of producing the piezoelectric device |
JP6023722B2 (ja) * | 2011-12-22 | 2016-11-09 | キヤノンアネルバ株式会社 | SrRuO3膜の成膜方法 |
JP5912702B2 (ja) * | 2012-03-16 | 2016-04-27 | 国立大学法人山梨大学 | 複合セラミックスおよびその製造方法 |
CN106835052A (zh) * | 2017-04-16 | 2017-06-13 | 北京工业大学 | 利用射频磁控溅射工艺制备BiFeO3薄膜阻变存储器的方法 |
JP2018206855A (ja) * | 2017-05-31 | 2018-12-27 | Tdk株式会社 | 積層構造体及びスピン変調素子 |
CN112242221A (zh) * | 2020-10-23 | 2021-01-19 | 天津大学 | 一种具有交换偏置效应的氮化铁基多铁性异质结构及制备方法 |
CN113690051B (zh) * | 2021-06-30 | 2023-03-31 | 中国科学院深圳先进技术研究院 | 具有超晶格结构和超高储能效率的多组分弛豫铁电薄膜材料及其制备方法 |
CN115595534B (zh) * | 2022-10-26 | 2023-11-28 | 湖南工程学院 | 一种导电铝酸镧/钛酸锶薄膜及其制备方法 |
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JPH07180047A (ja) * | 1993-12-24 | 1995-07-18 | Matsushita Electric Ind Co Ltd | 強誘電体薄膜素子の製造方法及び製造装置 |
JP2004179219A (ja) * | 2002-11-25 | 2004-06-24 | Matsushita Electric Ind Co Ltd | 磁気デバイスおよびこれを用いた磁気メモリ |
JP2004253535A (ja) * | 2003-02-19 | 2004-09-09 | Matsushita Electric Ind Co Ltd | 誘電体薄膜形成装置および誘電体薄膜形成方法 |
US20060288928A1 (en) | 2005-06-10 | 2006-12-28 | Chang-Beom Eom | Perovskite-based thin film structures on miscut semiconductor substrates |
US7696549B2 (en) * | 2005-08-04 | 2010-04-13 | University Of Maryland | Bismuth ferrite films and devices grown on silicon |
US20070029592A1 (en) * | 2005-08-04 | 2007-02-08 | Ramamoorthy Ramesh | Oriented bismuth ferrite films grown on silicon and devices formed thereby |
JP5041765B2 (ja) * | 2005-09-05 | 2012-10-03 | キヤノン株式会社 | エピタキシャル酸化物膜、圧電膜、圧電膜素子、圧電膜素子を用いた液体吐出ヘッド及び液体吐出装置 |
EP1905867A1 (en) * | 2006-09-28 | 2008-04-02 | Fujifilm Corporation | Process for forming a film, piezoelectric film, and piezoelectric device |
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2008
- 2008-05-22 KR KR1020080047474A patent/KR101003982B1/ko not_active IP Right Cessation
- 2008-08-28 JP JP2008219756A patent/JP4927799B2/ja not_active Expired - Fee Related
- 2008-10-02 US US12/244,094 patent/US7888138B2/en not_active Expired - Fee Related
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US7888138B2 (en) | 2011-02-15 |
JP2009094482A (ja) | 2009-04-30 |
US20090098664A1 (en) | 2009-04-16 |
KR20090037282A (ko) | 2009-04-15 |
KR101003982B1 (ko) | 2010-12-31 |
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