JP2012004173A - 超接合半導体装置の製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 55
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- 238000005468 ion implantation Methods 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 24
- 238000000059 patterning Methods 0.000 claims abstract description 21
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims description 41
- 239000012535 impurity Substances 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 11
- 238000000206 photolithography Methods 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims 2
- 239000010410 layer Substances 0.000 description 84
- 229910052796 boron Inorganic materials 0.000 description 17
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 229910052698 phosphorus Inorganic materials 0.000 description 9
- 239000011574 phosphorus Substances 0.000 description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- -1 for example Substances 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
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Abstract
【解決手段】2層目以降のアライメントマーク20の形成に代えて、2層目以降のレジストの選択的イオン注入用パターニングをする際に、同時に新規アライメントマーク用のパターニングをして新規アライメントマーク21を前回のアライメントマーク20の位置とは異なる位置に形成することを、複数回の前記並列pn層の形成工程のうち、少なくとも1回、実施する超接合半導体装置の製造方法とする。
【選択図】 図1
Description
2 n−層
3a、3b、3c ノンドープエピタキシャル層
4 n型カラム
5 p型カラム
6a、6c レジストマスク
6b レジスト開口部
6d ボロンイオン注入用レジスト開口部
6e 第2アライメントマーク用レジスト開口部
7 ガードリング
8 フィールド絶縁膜
9 n−領域
10 超接合構造
13 pベース領域
14 nエミッタ領域
15 ゲート絶縁膜
16 ゲート電極
17 エミッタ電極
20 第1のアライメントマーク
20a、20b 転写アライメントマーク
21 第2のアライメントマーク
22 破線
50 スクライブライン
100 半導体チップ領域
200 素子活性部
300 周縁耐圧構造部
Claims (4)
- 高濃度第1導電型半導体基板上に、エピタキシャル層の成長と、アライメントマークの形成と、該エピタキシャル層全面への第1導電型または第2導電型の不純物のイオン注入と、フォトリソグラフィによるレジストの選択的イオン注入用パターニングと、第2導電型または第1導電型の不純物の選択的イオン注入とをこの順に行う工程を1サイクルとして、前記イオン注入により形成される第1導電型領域と第2導電型領域からなる並列pn層の形成工程を複数回繰り返して積み重ねて所要の厚さとし、前記半導体基板の主面に垂直方向に複数配置される第1導電型カラムと第2導電型カラムを主面に平行方向に交互に隣接させる超接合構造をドリフト層として形成する超接合半導体装置の製造方法において、2層目以降のアライメントマークの形成に代えて、2層目以降のレジストの選択的イオン注入用パターニングをする際に、同時に新規アライメントマーク用のパターニングをして新規アライメントマークを前層のアライメントマークの位置とは異なる位置に形成することを、複数回の前記並列pn層の形成工程のうち、少なくとも1回、実施することを特徴とする超接合半導体装置の製造方法。
- 前記アライメントマークは、前記半導体基板のスクライブライン上に設けられ、前記半導体基板へのエッチング深さが0.3μm未満の凹部を有することを特徴とする、請求項1に記載の超接合半導体装置の製造方法。
- 高濃度第1導電型半導体基板上に、エピタキシャル層の成長と、アライメントマークの形成と、該エピタキシャル層全面への第1導電型または第2導電型の不純物のイオン注入と、フォトリソグラフィによるレジストの選択的イオン注入用パターニングと、第2導電型または第1導電型の不純物の選択的イオン注入とをこの順に行う工程を1サイクルとして、前記イオン注入により形成される第1導電型領域と第2導電型領域からなる並列pn層の形成工程を複数回繰り返して積み重ねて所要の厚さとし、前記半導体基板の主面に垂直方向に複数配置される第1導電型カラムと第2導電型カラムを主面に平行方向に交互に隣接させる超接合構造をドリフト層として形成する超接合半導体装置の製造方法において、2層目以降のアライメントマークの形成に代えて、前記ノンドープエピタキシャル層の形成後に、1層目のアライメントマークが転写されたノンドープエピタキシャル層の表面を等方性エッチングする工程を、複数回の前記並列pn層の形成工程のうち、少なくとも1回、実施することを特徴とする超接合半導体装置の製造方法。
- 前記等方性エッチングによるエッチング量を前記エピタキシャル層の表面から深さ0.5μm以内とすることを特徴とする請求項3記載の超接合半導体装置の製造方法。
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JP2010135185A JP5560931B2 (ja) | 2010-06-14 | 2010-06-14 | 超接合半導体装置の製造方法 |
US13/157,764 US8399340B2 (en) | 2010-06-14 | 2011-06-10 | Method of manufacturing super-junction semiconductor device |
CN201110170787.2A CN102280383B (zh) | 2010-06-14 | 2011-06-13 | 制造超结半导体器件的方法 |
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JP5560931B2 JP5560931B2 (ja) | 2014-07-30 |
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WO2015145913A1 (ja) | 2014-03-26 | 2015-10-01 | 日本碍子株式会社 | 半導体装置 |
CN105977161A (zh) * | 2016-06-21 | 2016-09-28 | 中航(重庆)微电子有限公司 | 超结结构及其制备方法 |
CN109686781A (zh) * | 2018-12-14 | 2019-04-26 | 无锡紫光微电子有限公司 | 一种多次外延的超结器件制作方法 |
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Citations (9)
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JP2001119022A (ja) * | 1999-10-20 | 2001-04-27 | Fuji Electric Co Ltd | 半導体装置及びその製造方法 |
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Cited By (9)
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JP2014082242A (ja) * | 2012-10-12 | 2014-05-08 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
TWI563540B (en) * | 2012-10-12 | 2016-12-21 | Fuji Electric Co Ltd | Semiconductor device manufacturing method |
WO2015145913A1 (ja) | 2014-03-26 | 2015-10-01 | 日本碍子株式会社 | 半導体装置 |
CN105977161A (zh) * | 2016-06-21 | 2016-09-28 | 中航(重庆)微电子有限公司 | 超结结构及其制备方法 |
JP2019197874A (ja) * | 2018-05-11 | 2019-11-14 | 富士電機株式会社 | 半導体装置の製造方法 |
JP7135422B2 (ja) | 2018-05-11 | 2022-09-13 | 富士電機株式会社 | 半導体装置の製造方法 |
CN109686781A (zh) * | 2018-12-14 | 2019-04-26 | 无锡紫光微电子有限公司 | 一种多次外延的超结器件制作方法 |
CN109713029A (zh) * | 2018-12-14 | 2019-05-03 | 无锡紫光微电子有限公司 | 一种改善反向恢复特性的多次外延超结器件制作方法 |
CN109713029B (zh) * | 2018-12-14 | 2021-08-03 | 无锡紫光微电子有限公司 | 一种改善反向恢复特性的多次外延超结器件制作方法 |
Also Published As
Publication number | Publication date |
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US8399340B2 (en) | 2013-03-19 |
CN102280383B (zh) | 2016-05-11 |
JP5560931B2 (ja) | 2014-07-30 |
CN102280383A (zh) | 2011-12-14 |
US20110306191A1 (en) | 2011-12-15 |
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