JP5533067B2 - 超接合半導体装置の製造方法 - Google Patents
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
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- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000003795 desorption Methods 0.000 description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 2
- -1 for example Substances 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
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- Condensed Matter Physics & Semiconductors (AREA)
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Description
2 低濃度n−層
3 n−低濃度エピタキシャル層
3a、3b、3c、3d ノンドープエピタキシャル層
3e、3f、3g n−低濃度エピタキシャル層
4 nドリフト領域(n型カラム)
5 p型の仕切領域(p型カラム)
6 レジストマスク
7 ガードリング
8 絶縁膜
9 導電性プレート
10 超接合構造部
11 p型チャネルストッパー
12 導電性プレート
13 pベース領域
14 nエミッタ領域
15 ゲート絶縁膜
16 ゲート電極
17 エミッタ電極
100 素子活性部
200 周縁耐圧構造部
Claims (7)
- 高濃度第1導電型半導体基板上に、前記半導体基板の主面に垂直方向に長い形状であって、主面に平行方向では交互に隣接配置される第1導電型領域と第2導電型領域からなる超接合構造部を、ドリフト層として備える主電流が流れる素子活性部と、前記超接合構造部とその上に第1導電型低濃度エピタキシャル層を備える前記素子活性部を取り巻く周縁耐圧構造部と、を備える超接合半導体装置の製造方法において、
ノンドープエピタキシャル成長と第1導電型不純物および第2導電型不純物の選択的イオン注入とを複数回繰り返して積み重ねる第1積層層形成工程と、前記第1積層層上に、第1導電型不純物をドープしながらの第1導電型低ドープエピタキシャル成長と第1導電型不純物および第2導電型不純物の選択的イオン注入とを複数回繰り返して積み重ねる第2積層層形成工程と、を備え、
前記第1導電型低ドープエピタキシャル成長する際に、第1導電型不純物のドープガスを半導体ソースガスよりも早くエピタキシャル成長ラインへ導入することを特徴とする超接合半導体装置の製造方法。 - 高濃度第1導電型半導体基板上に、前記半導体基板の主面に垂直方向に長い形状であって、主面に平行方向では交互に隣接配置される第1導電型領域と第2導電型領域からなる超接合構造部を、ドリフト層として備える主電流が流れる素子活性部と、前記超接合構造部とその上に第1導電型低濃度エピタキシャル層を備える前記素子活性部を取り巻く周縁耐圧構造部と、を備える超接合半導体装置の製造方法において、
ノンドープエピタキシャル成長と第1導電型不純物および第2導電型不純物の選択的イオン注入とを複数回繰り返して積み重ねる第1積層層形成工程と、前記第1積層層上に、第1導電型不純物をドープしながらの第1導電型低ドープエピタキシャル成長と第1導電型不純物および第2導電型不純物の選択的イオン注入とを複数回繰り返して積み重ねる第2積層層形成工程と、を備え、
前記第1導電型低ドープエピタキシャル成長前の水素アニール温度とエピタキシャル成長の開始温度とを1100℃未満にすることを特徴とする超接合半導体装置の製造方法。 - 高濃度第1導電型半導体基板上に、前記半導体基板の主面に垂直方向に長い形状であって、主面に平行方向では交互に隣接配置される第1導電型領域と第2導電型領域からなる超接合構造部を、ドリフト層として備える主電流が流れる素子活性部と、前記超接合構造部とその上に第1導電型低濃度エピタキシャル層を備える前記素子活性部を取り巻く周縁耐圧構造部と、を備える超接合半導体装置の製造方法において、
ノンドープエピタキシャル成長と第1導電型不純物および第2導電型不純物の選択的イオン注入とを複数回繰り返して積み重ねる第1積層層形成工程と、前記第1積層層上に、第1導電型不純物をドープしながらの第1導電型低ドープエピタキシャル成長と第1導電型不純物および第2導電型不純物の選択的イオン注入とを複数回繰り返して積み重ねる第2積層層形成工程と、を備え、
前記第1導電型低ドープエピタキシャル成長する際に、前記第1導電型ドープガスを半導体ソースガスよりも早くエピタキシャル成長ラインへ導入するとともに、前記第1導電型低ドープエピタキシャル成長前の水素アニール温度とエピタキシャル成長の開始温度を1100℃未満にすることを特徴とする超接合半導体装置の製造方法。 - 前記第1導電型低ドープエピタキシャル成長前の水素アニール温度とエピタキシャル成長を1000℃未満で開始した後、1100℃以上でエピタキシャル成長することを特徴とする請求項2または3に記載の超接合半導体装置の製造方法。
- 第1導電型ドープガスを半導体ソースガスよりも20秒以上早くエピタキシャル成長ラインへ導入することを特徴とする請求項1または3に記載の超接合半導体装置の製造方法。
- 前記第1導電型低濃度エピタキシャル層の不純物濃度が0.8×10 14 cm −3 〜1.2×10 14 cm −3 であることを特徴とする請求項1ないし5のいずれか一項に記載の超接合半導体装置の製造方法。
- 前記水素アニールを950℃〜1000℃未満で行うことを特徴とする請求項2〜6のいずれか一項に記載の超接合半導体装置の製造方法。
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JP2010058066A JP5533067B2 (ja) | 2010-03-15 | 2010-03-15 | 超接合半導体装置の製造方法 |
CN201110054890.0A CN102194700B (zh) | 2010-03-15 | 2011-03-07 | 超级结半导体器件的制造方法 |
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Families Citing this family (7)
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CN102881595B (zh) * | 2012-08-17 | 2015-10-28 | 西安龙腾新能源科技发展有限公司 | 一种超结高压功率器件的制造方法 |
CN104517853A (zh) * | 2014-05-15 | 2015-04-15 | 上海华虹宏力半导体制造有限公司 | 超级结半导体器件制造方法 |
CN105679660B (zh) * | 2016-01-29 | 2018-04-17 | 上海华虹宏力半导体制造有限公司 | 沟槽型超级结的制造方法 |
CN105977161A (zh) * | 2016-06-21 | 2016-09-28 | 中航(重庆)微电子有限公司 | 超结结构及其制备方法 |
CN107611167A (zh) * | 2017-08-21 | 2018-01-19 | 无锡新洁能股份有限公司 | 一种具有多个浓度中心的超结半导体器件及其制造方法 |
CN107845570B (zh) * | 2017-11-09 | 2019-02-12 | 四川广瑞半导体有限公司 | 绝缘栅双极型晶体管的硅外延片生产工艺 |
CN112382560A (zh) * | 2020-11-12 | 2021-02-19 | 重庆万国半导体科技有限公司 | 一种多层外延减压生长方法 |
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JP3086836B2 (ja) * | 1991-04-27 | 2000-09-11 | ローム株式会社 | 半導体装置の製造方法 |
JP3851744B2 (ja) * | 1999-06-28 | 2006-11-29 | 株式会社東芝 | 半導体装置の製造方法 |
JP4765012B2 (ja) * | 2000-02-09 | 2011-09-07 | 富士電機株式会社 | 半導体装置及びその製造方法 |
JP3636345B2 (ja) * | 2000-03-17 | 2005-04-06 | 富士電機デバイステクノロジー株式会社 | 半導体素子および半導体素子の製造方法 |
JP3731520B2 (ja) * | 2001-10-03 | 2006-01-05 | 富士電機デバイステクノロジー株式会社 | 半導体装置及びその製造方法 |
JP3743395B2 (ja) * | 2002-06-03 | 2006-02-08 | 株式会社デンソー | 半導体装置の製造方法及び半導体装置 |
JP4289123B2 (ja) * | 2003-10-29 | 2009-07-01 | 富士電機デバイステクノロジー株式会社 | 半導体装置 |
JP4773716B2 (ja) * | 2004-03-31 | 2011-09-14 | 株式会社デンソー | 半導体基板の製造方法 |
JP2006005275A (ja) * | 2004-06-21 | 2006-01-05 | Toshiba Corp | 電力用半導体素子 |
JP4940546B2 (ja) * | 2004-12-13 | 2012-05-30 | 株式会社デンソー | 半導体装置 |
JP5015440B2 (ja) * | 2005-09-29 | 2012-08-29 | 株式会社デンソー | 半導体基板の製造方法 |
WO2007048393A2 (de) * | 2005-10-24 | 2007-05-03 | Infineon Technologies Austria Ag | Halbleiterbauelement mit ladungskompensationsstruktur und verfahren zur herstellung desselben |
JP5052025B2 (ja) * | 2006-03-29 | 2012-10-17 | 株式会社東芝 | 電力用半導体素子 |
US7737469B2 (en) * | 2006-05-16 | 2010-06-15 | Kabushiki Kaisha Toshiba | Semiconductor device having superjunction structure formed of p-type and n-type pillar regions |
JP4564510B2 (ja) * | 2007-04-05 | 2010-10-20 | 株式会社東芝 | 電力用半導体素子 |
JP4621708B2 (ja) * | 2007-05-24 | 2011-01-26 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP5476689B2 (ja) * | 2008-08-01 | 2014-04-23 | 富士電機株式会社 | 半導体装置の製造方法 |
US8530300B2 (en) * | 2010-07-23 | 2013-09-10 | Infineon Technologies Austria Ag | Semiconductor device with drift regions and compensation regions |
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