JP2011524091A5 - - Google Patents

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Publication number
JP2011524091A5
JP2011524091A5 JP2011513573A JP2011513573A JP2011524091A5 JP 2011524091 A5 JP2011524091 A5 JP 2011524091A5 JP 2011513573 A JP2011513573 A JP 2011513573A JP 2011513573 A JP2011513573 A JP 2011513573A JP 2011524091 A5 JP2011524091 A5 JP 2011524091A5
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JP
Japan
Prior art keywords
diode element
layer
integrated circuit
conductor
intrinsic
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Pending
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JP2011513573A
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English (en)
Japanese (ja)
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JP2011524091A (ja
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Priority claimed from US12/139,435 external-priority patent/US8154005B2/en
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Publication of JP2011524091A publication Critical patent/JP2011524091A/ja
Publication of JP2011524091A5 publication Critical patent/JP2011524091A5/ja
Pending legal-status Critical Current

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JP2011513573A 2008-06-13 2009-06-02 電気的に絶縁された支柱のダイオードのための共有ダイオード要素部を有するレール積層体を備えた不揮発性メモリアレイ Pending JP2011524091A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/139,435 2008-06-13
US12/139,435 US8154005B2 (en) 2008-06-13 2008-06-13 Non-volatile memory arrays comprising rail stacks with a shared diode component portion for diodes of electrically isolated pillars
PCT/US2009/046001 WO2009152001A1 (en) 2008-06-13 2009-06-02 Non-volatile memory arrays comprising rail stacks with a shared diode component portion for diodes of electrically isolated pillars

Publications (2)

Publication Number Publication Date
JP2011524091A JP2011524091A (ja) 2011-08-25
JP2011524091A5 true JP2011524091A5 (enExample) 2012-05-24

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Application Number Title Priority Date Filing Date
JP2011513573A Pending JP2011524091A (ja) 2008-06-13 2009-06-02 電気的に絶縁された支柱のダイオードのための共有ダイオード要素部を有するレール積層体を備えた不揮発性メモリアレイ

Country Status (7)

Country Link
US (2) US8154005B2 (enExample)
EP (1) EP2286453A1 (enExample)
JP (1) JP2011524091A (enExample)
KR (1) KR20110039260A (enExample)
CN (1) CN102067315B (enExample)
TW (1) TWI582907B (enExample)
WO (1) WO2009152001A1 (enExample)

Families Citing this family (58)

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US8154005B2 (en) 2008-06-13 2012-04-10 Sandisk 3D Llc Non-volatile memory arrays comprising rail stacks with a shared diode component portion for diodes of electrically isolated pillars
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US8120068B2 (en) 2008-12-24 2012-02-21 Sandisk 3D Llc Three-dimensional memory structures having shared pillar memory cells
US8139391B2 (en) 2009-04-03 2012-03-20 Sandisk 3D Llc Multi-bit resistance-switching memory cell
US7978498B2 (en) * 2009-04-03 2011-07-12 Sandisk 3D, Llc Programming non-volatile storage element using current from other element
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US9019742B2 (en) 2010-08-20 2015-04-28 Shine C. Chung Multiple-state one-time programmable (OTP) memory to function as multi-time programmable (MTP) memory
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US8488359B2 (en) 2010-08-20 2013-07-16 Shine C. Chung Circuit and system of using junction diode as program selector for one-time programmable devices
US10249379B2 (en) 2010-08-20 2019-04-02 Attopsemi Technology Co., Ltd One-time programmable devices having program selector for electrical fuses with extended area
US8649203B2 (en) 2010-08-20 2014-02-11 Shine C. Chung Reversible resistive memory using polysilicon diodes as program selectors
US9236141B2 (en) 2010-08-20 2016-01-12 Shine C. Chung Circuit and system of using junction diode of MOS as program selector for programmable resistive devices
US9818478B2 (en) 2012-12-07 2017-11-14 Attopsemi Technology Co., Ltd Programmable resistive device and memory using diode as selector
US8804398B2 (en) 2010-08-20 2014-08-12 Shine C. Chung Reversible resistive memory using diodes formed in CMOS processes as program selectors
US10923204B2 (en) 2010-08-20 2021-02-16 Attopsemi Technology Co., Ltd Fully testible OTP memory
US10229746B2 (en) 2010-08-20 2019-03-12 Attopsemi Technology Co., Ltd OTP memory with high data security
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US8988965B2 (en) 2010-11-03 2015-03-24 Shine C. Chung Low-pin-count non-volatile memory interface
US9076513B2 (en) 2010-11-03 2015-07-07 Shine C. Chung Low-pin-count non-volatile memory interface with soft programming capability
US9019791B2 (en) 2010-11-03 2015-04-28 Shine C. Chung Low-pin-count non-volatile memory interface for 3D IC
US8913449B2 (en) 2012-03-11 2014-12-16 Shine C. Chung System and method of in-system repairs or configurations for memories
TWI478168B (zh) * 2010-12-08 2015-03-21 莊建祥 反熔絲記憶體及電子系統
US8848423B2 (en) 2011-02-14 2014-09-30 Shine C. Chung Circuit and system of using FinFET for building programmable resistive devices
US10586832B2 (en) 2011-02-14 2020-03-10 Attopsemi Technology Co., Ltd One-time programmable devices using gate-all-around structures
US10192615B2 (en) 2011-02-14 2019-01-29 Attopsemi Technology Co., Ltd One-time programmable devices having a semiconductor fin structure with a divided active region
JP2013065772A (ja) * 2011-09-20 2013-04-11 Toshiba Corp 半導体装置の製造方法
US9136261B2 (en) 2011-11-15 2015-09-15 Shine C. Chung Structures and techniques for using mesh-structure diodes for electro-static discharge (ESD) protection
US8912576B2 (en) 2011-11-15 2014-12-16 Shine C. Chung Structures and techniques for using semiconductor body to construct bipolar junction transistors
US9324849B2 (en) 2011-11-15 2016-04-26 Shine C. Chung Structures and techniques for using semiconductor body to construct SCR, DIAC, or TRIAC
US8861249B2 (en) 2012-02-06 2014-10-14 Shine C. Chung Circuit and system of a low density one-time programmable memory
US9007804B2 (en) 2012-02-06 2015-04-14 Shine C. Chung Circuit and system of protective mechanisms for programmable resistive memories
US8917533B2 (en) 2012-02-06 2014-12-23 Shine C. Chung Circuit and system for testing a one-time programmable (OTP) memory
US9076526B2 (en) 2012-09-10 2015-07-07 Shine C. Chung OTP memories functioning as an MTP memory
US9183897B2 (en) 2012-09-30 2015-11-10 Shine C. Chung Circuits and methods of a self-timed high speed SRAM
US9324447B2 (en) 2012-11-20 2016-04-26 Shine C. Chung Circuit and system for concurrently programming multiple bits of OTP memory devices
US9178143B2 (en) * 2013-07-29 2015-11-03 Industrial Technology Research Institute Resistive memory structure
US9412473B2 (en) 2014-06-16 2016-08-09 Shine C. Chung System and method of a novel redundancy scheme for OTP
KR102471608B1 (ko) * 2016-06-03 2022-11-29 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그의 구동 방법
US10726914B2 (en) 2017-04-14 2020-07-28 Attopsemi Technology Co. Ltd Programmable resistive memories with low power read operation and novel sensing scheme
US10535413B2 (en) 2017-04-14 2020-01-14 Attopsemi Technology Co., Ltd Low power read operation for programmable resistive memories
US11062786B2 (en) 2017-04-14 2021-07-13 Attopsemi Technology Co., Ltd One-time programmable memories with low power read operation and novel sensing scheme
US11615859B2 (en) 2017-04-14 2023-03-28 Attopsemi Technology Co., Ltd One-time programmable memories with ultra-low power read operation and novel sensing scheme
US10770160B2 (en) 2017-11-30 2020-09-08 Attopsemi Technology Co., Ltd Programmable resistive memory formed by bit slices from a standard cell library
KR102682821B1 (ko) 2019-01-25 2024-07-08 삼성전자주식회사 가변 저항 메모리 장치
US12483429B2 (en) 2021-06-01 2025-11-25 Attopsemi Technology Co., Ltd Physically unclonable function produced using OTP memory

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