JP2017069420A5 - - Google Patents
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- Publication number
- JP2017069420A5 JP2017069420A5 JP2015194130A JP2015194130A JP2017069420A5 JP 2017069420 A5 JP2017069420 A5 JP 2017069420A5 JP 2015194130 A JP2015194130 A JP 2015194130A JP 2015194130 A JP2015194130 A JP 2015194130A JP 2017069420 A5 JP2017069420 A5 JP 2017069420A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- bit line
- sram cell
- capacitor
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 33
- 239000003990 capacitor Substances 0.000 claims 16
- 239000010410 layer Substances 0.000 claims 9
- 230000015572 biosynthetic process Effects 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 5
- 239000011229 interlayer Substances 0.000 claims 4
- 238000000034 method Methods 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 1
- 238000001312 dry etching Methods 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 229910001936 tantalum oxide Inorganic materials 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910001928 zirconium oxide Inorganic materials 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015194130A JP2017069420A (ja) | 2015-09-30 | 2015-09-30 | 半導体装置および半導体装置の製造方法 |
| US15/270,132 US20170092649A1 (en) | 2015-09-30 | 2016-09-20 | Semiconductor device and method for manufacturing the same |
| CN201610862656.3A CN106558585A (zh) | 2015-09-30 | 2016-09-28 | 半导体器件及半导体器件的制造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015194130A JP2017069420A (ja) | 2015-09-30 | 2015-09-30 | 半導体装置および半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2017069420A JP2017069420A (ja) | 2017-04-06 |
| JP2017069420A5 true JP2017069420A5 (enExample) | 2018-06-28 |
Family
ID=58406778
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015194130A Pending JP2017069420A (ja) | 2015-09-30 | 2015-09-30 | 半導体装置および半導体装置の製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20170092649A1 (enExample) |
| JP (1) | JP2017069420A (enExample) |
| CN (1) | CN106558585A (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9564217B1 (en) * | 2015-10-19 | 2017-02-07 | United Microelectronics Corp. | Semiconductor memory device having integrated DOSRAM and NOSRAM |
| US10217794B2 (en) | 2017-05-24 | 2019-02-26 | Globalfoundries Singapore Pte. Ltd. | Integrated circuits with vertical capacitors and methods for producing the same |
| US11282815B2 (en) | 2020-01-14 | 2022-03-22 | Micron Technology, Inc. | Methods of forming microelectronic devices, and related microelectronic devices and electronic systems |
| US11557569B2 (en) | 2020-06-18 | 2023-01-17 | Micron Technology, Inc. | Microelectronic devices including source structures overlying stack structures, and related electronic systems |
| US11705367B2 (en) | 2020-06-18 | 2023-07-18 | Micron Technology, Inc. | Methods of forming microelectronic devices, and related microelectronic devices, memory devices, electronic systems, and additional methods |
| US11335602B2 (en) | 2020-06-18 | 2022-05-17 | Micron Technology, Inc. | Methods of forming microelectronic devices, and related microelectronic devices and electronic systems |
| US11380669B2 (en) | 2020-06-18 | 2022-07-05 | Micron Technology, Inc. | Methods of forming microelectronic devices |
| US11563018B2 (en) | 2020-06-18 | 2023-01-24 | Micron Technology, Inc. | Microelectronic devices, and related methods, memory devices, and electronic systems |
| US11699652B2 (en) | 2020-06-18 | 2023-07-11 | Micron Technology, Inc. | Microelectronic devices and electronic systems |
| US11417676B2 (en) | 2020-08-24 | 2022-08-16 | Micron Technology, Inc. | Methods of forming microelectronic devices and memory devices, and related microelectronic devices, memory devices, and electronic systems |
| US11825658B2 (en) | 2020-08-24 | 2023-11-21 | Micron Technology, Inc. | Methods of forming microelectronic devices and memory devices |
| US11751408B2 (en) | 2021-02-02 | 2023-09-05 | Micron Technology, Inc. | Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems |
| US12308309B2 (en) * | 2021-11-17 | 2025-05-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device with integrated metal-insulator-metal capacitors |
| US11791391B1 (en) | 2022-03-18 | 2023-10-17 | Micron Technology, Inc. | Inverters, and related memory devices and electronic systems |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3535615B2 (ja) * | 1995-07-18 | 2004-06-07 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
| KR100265763B1 (ko) * | 1997-12-31 | 2000-09-15 | 윤종용 | 스태틱 랜덤 억세스 메모리 장치 및 그 제조방법 |
| JP2000174143A (ja) * | 1998-12-09 | 2000-06-23 | Hitachi Ltd | スタティックｒａｍ |
| JP2002289703A (ja) * | 2001-01-22 | 2002-10-04 | Nec Corp | 半導体記憶装置およびその製造方法 |
| JP4753534B2 (ja) * | 2003-12-26 | 2011-08-24 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
| JP2008117864A (ja) * | 2006-11-01 | 2008-05-22 | Nec Electronics Corp | 半導体装置 |
| CN101814490B (zh) * | 2009-02-25 | 2012-07-04 | 台湾积体电路制造股份有限公司 | 集成电路结构 |
| US8617949B2 (en) * | 2009-11-13 | 2013-12-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Capacitor and method for making same |
| JP5613033B2 (ja) * | 2010-05-19 | 2014-10-22 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
-
2015
- 2015-09-30 JP JP2015194130A patent/JP2017069420A/ja active Pending
-
2016
- 2016-09-20 US US15/270,132 patent/US20170092649A1/en not_active Abandoned
- 2016-09-28 CN CN201610862656.3A patent/CN106558585A/zh active Pending
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