JP2012186510A5 - - Google Patents

Download PDF

Info

Publication number
JP2012186510A5
JP2012186510A5 JP2012149324A JP2012149324A JP2012186510A5 JP 2012186510 A5 JP2012186510 A5 JP 2012186510A5 JP 2012149324 A JP2012149324 A JP 2012149324A JP 2012149324 A JP2012149324 A JP 2012149324A JP 2012186510 A5 JP2012186510 A5 JP 2012186510A5
Authority
JP
Japan
Prior art keywords
line
electrical connection
connection line
common
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2012149324A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012186510A (ja
JP5131407B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2012149324A priority Critical patent/JP5131407B2/ja
Priority claimed from JP2012149324A external-priority patent/JP5131407B2/ja
Publication of JP2012186510A publication Critical patent/JP2012186510A/ja
Publication of JP2012186510A5 publication Critical patent/JP2012186510A5/ja
Application granted granted Critical
Publication of JP5131407B2 publication Critical patent/JP5131407B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2012149324A 1998-05-01 2012-07-03 半導体記憶装置 Expired - Lifetime JP5131407B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012149324A JP5131407B2 (ja) 1998-05-01 2012-07-03 半導体記憶装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP1998122542 1998-05-01
JP12254298 1998-05-01
JP2012149324A JP5131407B2 (ja) 1998-05-01 2012-07-03 半導体記憶装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2009083754A Division JP2009177200A (ja) 1998-05-01 2009-03-30 半導体記憶装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012202822A Division JP2013016846A (ja) 1998-05-01 2012-09-14 半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2012186510A JP2012186510A (ja) 2012-09-27
JP2012186510A5 true JP2012186510A5 (enExample) 2012-11-08
JP5131407B2 JP5131407B2 (ja) 2013-01-30

Family

ID=41031892

Family Applications (8)

Application Number Title Priority Date Filing Date
JP2009083754A Withdrawn JP2009177200A (ja) 1998-05-01 2009-03-30 半導体記憶装置
JP2012102233A Expired - Lifetime JP5035764B2 (ja) 1998-05-01 2012-04-27 半導体記憶装置
JP2012149324A Expired - Lifetime JP5131407B2 (ja) 1998-05-01 2012-07-03 半導体記憶装置
JP2012202822A Withdrawn JP2013016846A (ja) 1998-05-01 2012-09-14 半導体記憶装置
JP2014069932A Expired - Lifetime JP5674249B2 (ja) 1998-05-01 2014-03-28 半導体記憶装置
JP2014177297A Withdrawn JP2014222787A (ja) 1998-05-01 2014-09-01 半導体記憶装置
JP2014177296A Expired - Lifetime JP5674251B2 (ja) 1998-05-01 2014-09-01 半導体記憶装置
JP2015188669A Withdrawn JP2016021590A (ja) 1998-05-01 2015-09-25 半導体記憶装置

Family Applications Before (2)

Application Number Title Priority Date Filing Date
JP2009083754A Withdrawn JP2009177200A (ja) 1998-05-01 2009-03-30 半導体記憶装置
JP2012102233A Expired - Lifetime JP5035764B2 (ja) 1998-05-01 2012-04-27 半導体記憶装置

Family Applications After (5)

Application Number Title Priority Date Filing Date
JP2012202822A Withdrawn JP2013016846A (ja) 1998-05-01 2012-09-14 半導体記憶装置
JP2014069932A Expired - Lifetime JP5674249B2 (ja) 1998-05-01 2014-03-28 半導体記憶装置
JP2014177297A Withdrawn JP2014222787A (ja) 1998-05-01 2014-09-01 半導体記憶装置
JP2014177296A Expired - Lifetime JP5674251B2 (ja) 1998-05-01 2014-09-01 半導体記憶装置
JP2015188669A Withdrawn JP2016021590A (ja) 1998-05-01 2015-09-25 半導体記憶装置

Country Status (1)

Country Link
JP (8) JP2009177200A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220034051A (ko) * 2019-07-11 2022-03-17 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드 주상 반도체 장치와, 그 제조 방법
WO2021070366A1 (ja) * 2019-10-11 2021-04-15 株式会社ソシオネクスト 半導体装置
WO2021070367A1 (ja) * 2019-10-11 2021-04-15 株式会社ソシオネクスト 半導体装置
CN114586144B (zh) * 2019-10-25 2024-10-29 株式会社索思未来 半导体装置
CN114762113B (zh) * 2019-12-05 2024-11-01 株式会社索思未来 半导体装置

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5055716A (en) * 1990-05-15 1991-10-08 Siarc Basic cell for bicmos gate array
JPH04145656A (ja) * 1990-10-08 1992-05-19 Nec Corp 半導体記憶装置及びその製造方法
JPH05136373A (ja) * 1990-11-21 1993-06-01 Ricoh Co Ltd 半導体集積回路装置及びその製造方法
US5287304A (en) * 1990-12-31 1994-02-15 Texas Instruments Incorporated Memory cell circuit and array
JPH04257258A (ja) * 1991-02-08 1992-09-11 Nec Corp Ｍｏｓ型スタティックメモリ
US5166902A (en) * 1991-03-18 1992-11-24 United Technologies Corporation SRAM memory cell
GB2254487B (en) * 1991-03-23 1995-06-21 Sony Corp Full CMOS type static random access memories
JPH05136372A (ja) * 1991-11-12 1993-06-01 Sony Corp スタテイツクｒａｍのメモリセルおよびそのメモリセルアレイ
EP0562207B1 (en) * 1992-03-27 1996-06-05 International Business Machines Corporation Method of forming thin film pseudo-planar PFET devices and structures resulting therefrom
JPH05299621A (ja) * 1992-04-20 1993-11-12 Mitsubishi Electric Corp 半導体メモリ装置およびゲートアレイ装置
JPH06104420A (ja) * 1992-09-22 1994-04-15 Toshiba Corp 半導体装置およびその製造方法
JP2705874B2 (ja) * 1992-12-18 1998-01-28 川崎製鉄株式会社 半導体集積回路
JP3237346B2 (ja) * 1993-10-29 2001-12-10 ソニー株式会社 半導体記憶装置
JPH07130877A (ja) * 1993-11-05 1995-05-19 Sony Corp 完全ｃｍｏｓ型スタティック記憶セル
JPH07161839A (ja) * 1993-12-06 1995-06-23 Sony Corp 完全ｃｍｏｓ型ｓｒａｍ装置
JP3294041B2 (ja) * 1994-02-21 2002-06-17 株式会社東芝 半導体装置
JP3426711B2 (ja) * 1994-07-05 2003-07-14 株式会社日立製作所 半導体集積回路装置およびその製造方法
JPH08288407A (ja) * 1995-04-12 1996-11-01 Sony Corp 半導体メモリ装置およびその製造方法
JPH09172078A (ja) * 1995-12-20 1997-06-30 Fujitsu Ltd 半導体装置の配線構造及びその形成方法
US5719079A (en) * 1996-05-28 1998-02-17 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making a semiconductor device having high density 4T SRAM in logic with salicide process
JPH1056078A (ja) * 1996-08-08 1998-02-24 Fujitsu Ltd 半導体装置
JPH1093024A (ja) * 1996-09-11 1998-04-10 Hitachi Ltd 半導体集積回路装置
JPH10163344A (ja) * 1996-12-05 1998-06-19 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP3523762B2 (ja) * 1996-12-19 2004-04-26 株式会社東芝 半導体記憶装置
JPH10326896A (ja) * 1997-03-25 1998-12-08 Toshiba Corp 半導体装置及びその製造方法
US6005296A (en) * 1997-05-30 1999-12-21 Stmicroelectronics, Inc. Layout for SRAM structure
JP3363750B2 (ja) * 1997-08-15 2003-01-08 株式会社日立製作所 半導体集積回路装置の製造方法

Similar Documents

Publication Publication Date Title
JP6428956B2 (ja) 半導体集積回路装置
US8710592B2 (en) SRAM cells using shared gate electrode configuration
JP6947987B2 (ja) 半導体集積回路装置
TW201721862A (zh) 場效電晶體以及半導體裝置
JP2011205101A5 (enExample)
US20210320065A1 (en) Semiconductor integrated circuit device
TWI502702B (zh) 半導體裝置
US8456888B2 (en) Semiconductor memory device including variable resistance elements and manufacturing method thereof
JP2014123782A5 (enExample)
JP2012186510A5 (enExample)
TW201733025A (zh) 靜態隨機存取記憶體單元
US9240415B2 (en) Semiconductor device and method of forming the same
TWI689080B (zh) 記憶體裝置
TWI511161B (zh) 具有雙重圖案化金屬層結構之位元格
CN107154399A (zh) 静态随机存取记忆体储存单元
US20110079834A1 (en) Semiconductor integrated circuit device
JP2015122398A5 (enExample)
JP2014135399A (ja) 半導体記憶装置
TW201630158A (zh) 半導體積體電路
CN111033720B (zh) 半导体集成电路装置
JPWO2018150913A1 (ja) 半導体集積回路装置
JP2019054151A (ja) 集積回路装置
US20160049187A1 (en) Semiconductor device
CN118712190B (zh) 半导体标准单元结构、半导体结构和存储器
TWI847046B (zh) 半導體結構