JPWO2018150913A1 - 半導体集積回路装置 - Google Patents
半導体集積回路装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 238000009792 diffusion process Methods 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims description 47
- 239000002070 nanowire Substances 0.000 claims description 34
- 230000005669 field effect Effects 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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Abstract
Description
図1は第1実施形態に係る半導体集積回路装置が備えたスタンダードセルのレイアウト構成例を示す平面図である。図1では、図面横方向をX方向(第1方向に相当)とし、図面縦方向をY方向(第2方向に相当)としている。以降のレイアウト平面図についても同様である。図1では、スタンダードセル1,2は、X方向に延びる同じセル列に配置されている。CFはセル枠である。また、図2(a)は図1の線A1−A1における断面図であり、図2(b)は図1の線A2−A2における断面図である。
図5は図1のスタンダードセル2について、メタル配線の形状を示す平面図である。なお、図5では、図の簡略化のために、フィンとゲート配線の図示を省略している。上述したとおり、スタンダードセル2にはメタル配線29a〜29eが設けられており、これらメタル配線29a〜29eによって、スタンダードセル2の論理を構成するための接続が行われている。
図7は図1のスタンダードセル2のレイアウト構成の変形例を示す図である。なお、図7では、図の簡略化のために、フィンの図示を省略している。図7の構成では、ダミーゲート配線27cが、ローカル配線51(模様を付している)を介して、ゲート配線25およびメタル配線29cに接続されている。すなわち、ダミーゲート配線27cが、フィンFET P22,N22からなるインバータとフィンFET P23,N23からなるインバータとを接続する信号配線に、容量を構成するように、接続されている。これにより、信号配線の配線容量を増やして、遅延をより大きくすることができる。
また、上の各実施形態では、フィンFETを例にとって説明したが、フィンFET以外の3次元トランジスタデバイス、例えばナノワイヤFETを用いた構成としてもよい。
2 第2スタンダードセル
11,12,21a,21b,22a,22b フィン(立体拡散層部)
13,14,23,24,25,26 ゲート配線
16,31, ローカル配線
P11,P12,N11,N12,P21,P22,P23,P24,N21,N22,N23,N24 フィンFET(3次元トランジスタデバイス)
27c ダミーゲート配線
29a〜29e メタル配線
40a,40b,40c 主部
41〜46 冗長部
VDD 電源配線
VSS 電源配線
Claims (9)
- 3次元トランジスタデバイスを有し、論理セルである第1スタンダードセルと、
3次元トランジスタデバイスを有し、遅延セルである第2スタンダードセルとを備え、
前記第1スタンダードセルは、
第1方向に延びる、1つ、または、前記第1方向と垂直をなす第2方向において並ぶ複数の、第1立体拡散層部と、
前記第2方向に延びており、前記第1立体拡散層部と、前記第1方向に延びる、所定の第1電源電圧を供給する電源配線とを接続する第1ローカル配線とを備え、
前記第2スタンダードセルは、
前記第1方向に延びる、1つ、または、前記第2方向において並ぶ複数の、第2立体拡散層部と、
前記第2方向に延びており、前記第2立体拡散層部と前記電源配線とを接続する第2ローカル配線と、
前記第2立体拡散層部と平面視で交差するように前記第2方向に延びており、前記第2立体拡散層部を囲むように形成されており、所定の第2電源電圧が与えられているゲート配線とを備え、
前記第2スタンダードセルにおいて、前記第2ローカル配線が、前記電源配線から離れる向きにおいて前記第2立体拡散層部から突出する長さは、前記第1スタンダードセルにおいて、前記第1ローカル配線が、前記電源配線から離れる向きにおいて前記第1立体拡散層部から突出する長さよりも、大きい
ことを特徴とする半導体集積回路装置。 - 請求項1記載の半導体集積回路装置において、
前記第1立体拡散層部と前記第2立体拡散層部とは、個数、および、前記第2方向における位置が同一である
ことを特徴とする半導体集積回路装置。 - 請求項1記載の半導体集積回路装置において、
前記第2スタンダードセルは、
前記第2ローカル配線の上層に形成されたメタル配線を備え、
前記メタル配線に含まれる第1配線は、
当該第2スタンダードセルの論理を構成するための接続を行う主部と、
前記主部から、前記主部が延びる方向と異なる方向に分岐し、前記主部のみと電気的に接続された冗長部とを有する
ことを特徴とする半導体集積回路装置。 - 請求項3記載の半導体集積回路装置において、
前記メタル配線は、前記主部と前記冗長部とを有する第2配線を含み、
前記第1配線が有する前記冗長部と、前記第2配線が有する前記冗長部とは、同一方向に延びており、かつ、当該同一方向と垂直をなす方向において、他のメタル配線を間に介さずに隣り合っている
ことを特徴とする半導体集積回路装置。 - 請求項4記載の半導体集積回路装置において、
前記第2スタンダードセルは、
3次元トランジスタデバイスによって構成された論理ゲートを備え、
前記第1配線は、前記論理ゲートの入力に接続されており、
前記第2配線は、前記論理ゲートの出力に接続されている
ことを特徴とする半導体集積回路装置。 - 請求項5記載の半導体集積回路装置において、
前記論理ゲートは、インバータである
ことを特徴とする半導体集積回路装置。 - 請求項1記載の半導体集積回路装置において、
前記第2スタンダードセルは、
前記第2方向に延びており、前記第2立体拡散層部と離間して設けられたダミーゲート配線を備え、
前記ダミーゲート配線は、当該第2スタンダードセルの論理を構成するための接続を行う配線に、接続されている
ことを特徴とする半導体集積回路装置。 - 請求項7記載の半導体集積回路装置において、
前記ダミーゲート配線は、当該第2スタンダードセルの論理を構成するための接続を行う配線の一部を構成している
ことを特徴とする半導体集積回路装置。 - 請求項1〜8のうちいずれか1項記載の半導体集積回路装置において、
前記3次元トランジスタデバイスは、フィンFET(Field Effect Transistor)、または、ナノワイヤFETである
ことを特徴とする半導体集積回路装置。
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