JP6947987B2 - 半導体集積回路装置 - Google Patents
半導体集積回路装置 Download PDFInfo
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- JP6947987B2 JP6947987B2 JP2018537049A JP2018537049A JP6947987B2 JP 6947987 B2 JP6947987 B2 JP 6947987B2 JP 2018537049 A JP2018537049 A JP 2018537049A JP 2018537049 A JP2018537049 A JP 2018537049A JP 6947987 B2 JP6947987 B2 JP 6947987B2
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- 239000004065 semiconductor Substances 0.000 title claims description 35
- 239000002184 metal Substances 0.000 claims description 66
- 238000009792 diffusion process Methods 0.000 claims description 40
- 239000002070 nanowire Substances 0.000 claims description 35
- 230000005669 field effect Effects 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 11
- 238000000059 patterning Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 230000003071 parasitic effect Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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Description
図1は第1実施形態に係る半導体集積回路装置が備えたスタンダードセルのレイアウト構成例を示す平面図である。図1では、図面横方向をX方向(第1方向に相当)とし、図面縦方向をY方向(第2方向に相当)としている。以降のレイアウト平面図についても同様である。図1では、スタンダードセル1,2は、X方向に延びる同じセル列に配置されている。CFはセル枠である。また、図2(a)は図1の線A1−A1における断面図であり、図2(b)は図1の線A2−A2における断面図である。
図1では、容量セルであるスタンダードセル2はいわゆるシングルハイトセルであるものとした。ただし、本実施形態に係る容量セルは、いわゆるマルチハイトセルとして構成することもできる。
図6は第2実施形態に係る半導体集積回路装置が備えたスタンダードセルのレイアウト構成例を示す平面図である。図6に示すスタンダードセル5は容量セルであり、メタル配線51,52およびコンタクト61以外の構成、例えば、フィンやゲート配線の配置形態や各要素の接続関係に関しては、図1のスタンダードセル2と同一である。なお、図を分かりやすくするために、メタル配線の下に配置されたフィンについて、ローカル配線やゲート配線が上に設けられていない部分に灰色を付している。図3(b)の回路図に示すとおり、フィンFET P21,N21は固定値出力部202を構成し、フィンFET P22,N22は容量部201を構成している。メタル配線51は、固定値出力部202を構成するフィンFET N21のドレインに接続されており、容量部201を構成するフィンFET P22のゲートに電圧VSSを供給する。メタル配線52は、固定値出力部202を構成するフィンFET P21のドレインに接続されており、容量部201を構成するフィンFET N22のゲートに電圧VDDを供給する。
また、上の各実施形態では、フィンFETを例にとって説明したが、フィンFET以外の3次元トランジスタデバイス、例えばナノワイヤFETを用いた構成としてもよい。
2 第2スタンダードセル
4,4A 容量セル
5 容量セル
11,12,21,22 フィン(立体拡散層部)
13,14,23,24,25,26 ゲート配線
16,31,32 ローカル配線
41,42,45 フィン(立体拡散層部)
43 ローカル配線
44 ゲート配線
51,53,55 メタル配線(第1配線)
51a,53a,55a 第1部分
51b,53b,55b 第2部分
51c,53c,55c 第3部分
52,54,56 メタル配線(第2配線)
52a,54a,56a 第4部分
52b,54b,56b 第5部分
201 容量部
202 固定値出力部
P11,P12,N11,N12,P21,P22,N21,N22 フィンFET(3次元トランジスタデバイス)
VDD 電源配線
VSS 電源配線
Claims (7)
- 3次元トランジスタデバイスを有し、論理セルである第1スタンダードセルと、
3次元トランジスタデバイスを有し、容量セルである第2スタンダードセルとを備え、
前記第1スタンダードセルは、
第1方向に延びる、1つ、または、前記第1方向と垂直をなす第2方向において並ぶ複数の、第1立体拡散層部と、
前記第2方向に延びており、前記第1立体拡散層部と、前記第1方向に延びる、所定の第1電源電圧を供給する電源配線とを接続する第1ローカル配線とを備え、
前記第2スタンダードセルは、
前記第1方向に延びる、1つ、または、前記第2方向において並ぶ複数の、第2立体拡散層部と、
前記第2方向に延びており、前記第2立体拡散層部と前記電源配線とを接続する第2ローカル配線と、
前記第2立体拡散層部と平面視で交差するように前記第2方向に延びており、前記第2立体拡散層部を囲むように形成されており、所定の第2電源電圧が与えられているゲート配線とを備え、
前記第2スタンダードセルにおいて、前記第2ローカル配線が、前記電源配線から離れる向きにおいて前記第2立体拡散層部から突出する長さは、前記第1スタンダードセルにおいて、前記第1ローカル配線が、前記電源配線から離れる向きにおいて前記第1立体拡散層部から突出する長さよりも、大きく、
前記第2スタンダードセルは、
前記第1方向に延びる、1つ、または、前記第2方向において並ぶ複数の、第3立体拡散層部を備え、
前記第3立体拡散層部は、前記電源配線の、前記第2立体拡散層部が配置された側の反対側に配置されており、
前記ゲート配線は、前記電源配線の下を通って前記第3立体拡散層部と平面視で交差するように延びており、前記第3立体拡散層部を囲むように形成されている
ことを特徴とする半導体集積回路装置。 - 請求項1記載の半導体集積回路装置において、
前記第1立体拡散層部と前記第2立体拡散層部とは、個数、および、前記第2方向における位置が同一である
ことを特徴とする半導体集積回路装置。 - 請求項1記載の半導体集積回路装置において、
前記第2スタンダードセルは、
前記第1方向に延びる、1つ、または、前記第2方向において並ぶ複数の、第4立体拡散層部を備え、
前記第4立体拡散層部は、前記電源配線の下に、形成されており、
前記ゲート配線は、前記第4立体拡散層部を囲むように形成されている
ことを特徴とする半導体集積回路装置。 - 容量セルであるスタンダードセルを備え、
前記スタンダードセルは、
第1方向に延び、第1電源電圧を供給する第1電源配線と、
前記第1方向に延び、第2電源電圧を供給する第2電源配線と、
前記第1および第2電源配線の間に設けられ、3次元トランジスタデバイスを有する容量部と、
前記容量部に、前記第2電源電圧を供給する第1配線と、
前記容量部に、前記第1電源電圧を供給する第2配線とを備え、
前記第1および第2電源配線、並びに、前記第1および第2配線は、同一の金属配線層に設けられており、
前記第1配線は、
前記第1方向に延び、前記第1電源配線に隣接しており、前記金属配線層において前記第1電源配線に最も近い配線である第1部分と、
前記第1方向に延び、前記第2電源配線に隣接しており、前記金属配線層において前記第2電源配線に最も近い配線である第2部分と、
前記第1方向と垂直をなす方向である第2方向に延び、前記第1および第2部分を接続する第3部分とを備えた
ことを特徴とする半導体集積回路装置。 - 請求項4記載の半導体集積回路装置において、
前記第2配線は、
前記第1方向に延び、前記第1配線の前記第1部分に、前記第1電源配線と反対側に隣接する第4部分と、
前記第1配線の前記第1および第2部分に挟まれた領域において、前記第2方向に延びる第5部分とを備えた
ことを特徴とする半導体集積回路装置。 - 請求項5記載の半導体集積回路装置において、
前記第1配線の前記第1部分と前記第1電源配線との間隔、および、前記第1配線の前記第1部分と前記第2配線の第4部分との間隔は、等しい
ことを特徴とする半導体集積回路装置。 - 請求項1〜6のうちいずれか1項記載の半導体集積回路装置において、
前記3次元トランジスタデバイスは、フィンFET(Field Effect Transistor)、または、ナノワイヤFETである
ことを特徴とする半導体集積回路装置。
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