KR20110039260A - 전기적으로 절연된 필라들의 다이오드들에 대해 공유되는 다이오드 요소 부분을 갖는 레일 스택을 포함하는 비휘발성 메모리 어레이 - Google Patents

전기적으로 절연된 필라들의 다이오드들에 대해 공유되는 다이오드 요소 부분을 갖는 레일 스택을 포함하는 비휘발성 메모리 어레이 Download PDF

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KR20110039260A
KR20110039260A KR1020117000959A KR20117000959A KR20110039260A KR 20110039260 A KR20110039260 A KR 20110039260A KR 1020117000959 A KR1020117000959 A KR 1020117000959A KR 20117000959 A KR20117000959 A KR 20117000959A KR 20110039260 A KR20110039260 A KR 20110039260A
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diode element
layer
polysilicon layer
diode
conductor
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Korean (ko)
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강-제이 시아
크리스토퍼 제이. 페티
캘빈 케이. 리
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쌘디스크 3디 엘엘씨
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/10—ROM devices comprising bipolar components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays

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  • Semiconductor Memories (AREA)
KR1020117000959A 2008-06-13 2009-06-02 전기적으로 절연된 필라들의 다이오드들에 대해 공유되는 다이오드 요소 부분을 갖는 레일 스택을 포함하는 비휘발성 메모리 어레이 Withdrawn KR20110039260A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/139,435 2008-06-13
US12/139,435 US8154005B2 (en) 2008-06-13 2008-06-13 Non-volatile memory arrays comprising rail stacks with a shared diode component portion for diodes of electrically isolated pillars

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KR20110039260A true KR20110039260A (ko) 2011-04-15

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KR1020117000959A Withdrawn KR20110039260A (ko) 2008-06-13 2009-06-02 전기적으로 절연된 필라들의 다이오드들에 대해 공유되는 다이오드 요소 부분을 갖는 레일 스택을 포함하는 비휘발성 메모리 어레이

Country Status (7)

Country Link
US (2) US8154005B2 (enExample)
EP (1) EP2286453A1 (enExample)
JP (1) JP2011524091A (enExample)
KR (1) KR20110039260A (enExample)
CN (1) CN102067315B (enExample)
TW (1) TWI582907B (enExample)
WO (1) WO2009152001A1 (enExample)

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US9070437B2 (en) 2010-08-20 2015-06-30 Shine C. Chung Circuit and system of using junction diode as program selector for one-time programmable devices with heat sink
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US9076513B2 (en) 2010-11-03 2015-07-07 Shine C. Chung Low-pin-count non-volatile memory interface with soft programming capability
US8913449B2 (en) 2012-03-11 2014-12-16 Shine C. Chung System and method of in-system repairs or configurations for memories
US9019791B2 (en) 2010-11-03 2015-04-28 Shine C. Chung Low-pin-count non-volatile memory interface for 3D IC
US8988965B2 (en) 2010-11-03 2015-03-24 Shine C. Chung Low-pin-count non-volatile memory interface
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US10586832B2 (en) 2011-02-14 2020-03-10 Attopsemi Technology Co., Ltd One-time programmable devices using gate-all-around structures
US8848423B2 (en) 2011-02-14 2014-09-30 Shine C. Chung Circuit and system of using FinFET for building programmable resistive devices
JP2013065772A (ja) * 2011-09-20 2013-04-11 Toshiba Corp 半導体装置の製造方法
US8912576B2 (en) 2011-11-15 2014-12-16 Shine C. Chung Structures and techniques for using semiconductor body to construct bipolar junction transistors
US9324849B2 (en) 2011-11-15 2016-04-26 Shine C. Chung Structures and techniques for using semiconductor body to construct SCR, DIAC, or TRIAC
US9136261B2 (en) 2011-11-15 2015-09-15 Shine C. Chung Structures and techniques for using mesh-structure diodes for electro-static discharge (ESD) protection
US8861249B2 (en) 2012-02-06 2014-10-14 Shine C. Chung Circuit and system of a low density one-time programmable memory
US8917533B2 (en) 2012-02-06 2014-12-23 Shine C. Chung Circuit and system for testing a one-time programmable (OTP) memory
US9007804B2 (en) 2012-02-06 2015-04-14 Shine C. Chung Circuit and system of protective mechanisms for programmable resistive memories
US9076526B2 (en) 2012-09-10 2015-07-07 Shine C. Chung OTP memories functioning as an MTP memory
US9183897B2 (en) 2012-09-30 2015-11-10 Shine C. Chung Circuits and methods of a self-timed high speed SRAM
US9324447B2 (en) 2012-11-20 2016-04-26 Shine C. Chung Circuit and system for concurrently programming multiple bits of OTP memory devices
US9178143B2 (en) * 2013-07-29 2015-11-03 Industrial Technology Research Institute Resistive memory structure
US9412473B2 (en) 2014-06-16 2016-08-09 Shine C. Chung System and method of a novel redundancy scheme for OTP
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US11062786B2 (en) 2017-04-14 2021-07-13 Attopsemi Technology Co., Ltd One-time programmable memories with low power read operation and novel sensing scheme
US10535413B2 (en) 2017-04-14 2020-01-14 Attopsemi Technology Co., Ltd Low power read operation for programmable resistive memories
US10726914B2 (en) 2017-04-14 2020-07-28 Attopsemi Technology Co. Ltd Programmable resistive memories with low power read operation and novel sensing scheme
US11615859B2 (en) 2017-04-14 2023-03-28 Attopsemi Technology Co., Ltd One-time programmable memories with ultra-low power read operation and novel sensing scheme
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Also Published As

Publication number Publication date
CN102067315A (zh) 2011-05-18
US8154005B2 (en) 2012-04-10
JP2011524091A (ja) 2011-08-25
WO2009152001A1 (en) 2009-12-17
EP2286453A1 (en) 2011-02-23
US20120187361A1 (en) 2012-07-26
TWI582907B (zh) 2017-05-11
US8748859B2 (en) 2014-06-10
CN102067315B (zh) 2013-04-24
TW201007887A (en) 2010-02-16
US20090309089A1 (en) 2009-12-17

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