JP2011524091A - 電気的に絶縁された支柱のダイオードのための共有ダイオード要素部を有するレール積層体を備えた不揮発性メモリアレイ - Google Patents

電気的に絶縁された支柱のダイオードのための共有ダイオード要素部を有するレール積層体を備えた不揮発性メモリアレイ Download PDF

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JP2011524091A
JP2011524091A JP2011513573A JP2011513573A JP2011524091A JP 2011524091 A JP2011524091 A JP 2011524091A JP 2011513573 A JP2011513573 A JP 2011513573A JP 2011513573 A JP2011513573 A JP 2011513573A JP 2011524091 A JP2011524091 A JP 2011524091A
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layer
diode element
conductor
integrated circuit
diode
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JP2011524091A5 (enExample
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カン−ジェイ シア
クリストファー ジェイ． ペティー
カルバン ケー． リ
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サンディスク スリーディー，エルエルシー
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/10—ROM devices comprising bipolar components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays

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JP2011513573A 2008-06-13 2009-06-02 電気的に絶縁された支柱のダイオードのための共有ダイオード要素部を有するレール積層体を備えた不揮発性メモリアレイ Pending JP2011524091A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/139,435 2008-06-13
US12/139,435 US8154005B2 (en) 2008-06-13 2008-06-13 Non-volatile memory arrays comprising rail stacks with a shared diode component portion for diodes of electrically isolated pillars
PCT/US2009/046001 WO2009152001A1 (en) 2008-06-13 2009-06-02 Non-volatile memory arrays comprising rail stacks with a shared diode component portion for diodes of electrically isolated pillars

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JP2011524091A true JP2011524091A (ja) 2011-08-25
JP2011524091A5 JP2011524091A5 (enExample) 2012-05-24

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US (2) US8154005B2 (enExample)
EP (1) EP2286453A1 (enExample)
JP (1) JP2011524091A (enExample)
KR (1) KR20110039260A (enExample)
CN (1) CN102067315B (enExample)
TW (1) TWI582907B (enExample)
WO (1) WO2009152001A1 (enExample)

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US8105867B2 (en) * 2008-11-18 2012-01-31 Sandisk 3D Llc Self-aligned three-dimensional non-volatile memory fabrication
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US8270199B2 (en) 2009-04-03 2012-09-18 Sandisk 3D Llc Cross point non-volatile memory cell
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JP5981424B2 (ja) * 2010-06-11 2016-08-31 クロスバー， インコーポレイテッドＣｒｏｓｓｂａｒ， Ｉｎｃ． メモリー素子に関する柱状構造及び方法
US9224496B2 (en) 2010-08-11 2015-12-29 Shine C. Chung Circuit and system of aggregated area anti-fuse in CMOS processes
US10916317B2 (en) 2010-08-20 2021-02-09 Attopsemi Technology Co., Ltd Programmable resistance memory on thin film transistor technology
US10229746B2 (en) 2010-08-20 2019-03-12 Attopsemi Technology Co., Ltd OTP memory with high data security
US8488364B2 (en) 2010-08-20 2013-07-16 Shine C. Chung Circuit and system of using a polysilicon diode as program selector for resistive devices in CMOS logic processes
US9496033B2 (en) 2010-08-20 2016-11-15 Attopsemi Technology Co., Ltd Method and system of programmable resistive devices with read capability using a low supply voltage
US9042153B2 (en) 2010-08-20 2015-05-26 Shine C. Chung Programmable resistive memory unit with multiple cells to improve yield and reliability
US9711237B2 (en) 2010-08-20 2017-07-18 Attopsemi Technology Co., Ltd. Method and structure for reliable electrical fuse programming
US9251893B2 (en) 2010-08-20 2016-02-02 Shine C. Chung Multiple-bit programmable resistive memory using diode as program selector
US9025357B2 (en) 2010-08-20 2015-05-05 Shine C. Chung Programmable resistive memory unit with data and reference cells
US9818478B2 (en) 2012-12-07 2017-11-14 Attopsemi Technology Co., Ltd Programmable resistive device and memory using diode as selector
US9431127B2 (en) 2010-08-20 2016-08-30 Shine C. Chung Circuit and system of using junction diode as program selector for metal fuses for one-time programmable devices
US8830720B2 (en) 2010-08-20 2014-09-09 Shine C. Chung Circuit and system of using junction diode as program selector and MOS as read selector for one-time programmable devices
US8804398B2 (en) 2010-08-20 2014-08-12 Shine C. Chung Reversible resistive memory using diodes formed in CMOS processes as program selectors
US9019742B2 (en) 2010-08-20 2015-04-28 Shine C. Chung Multiple-state one-time programmable (OTP) memory to function as multi-time programmable (MTP) memory
US8488359B2 (en) 2010-08-20 2013-07-16 Shine C. Chung Circuit and system of using junction diode as program selector for one-time programmable devices
US9236141B2 (en) 2010-08-20 2016-01-12 Shine C. Chung Circuit and system of using junction diode of MOS as program selector for programmable resistive devices
US10249379B2 (en) 2010-08-20 2019-04-02 Attopsemi Technology Co., Ltd One-time programmable devices having program selector for electrical fuses with extended area
US10923204B2 (en) 2010-08-20 2021-02-16 Attopsemi Technology Co., Ltd Fully testible OTP memory
US9460807B2 (en) 2010-08-20 2016-10-04 Shine C. Chung One-time programmable memory devices using FinFET technology
US9824768B2 (en) 2015-03-22 2017-11-21 Attopsemi Technology Co., Ltd Integrated OTP memory for providing MTP memory
US9070437B2 (en) 2010-08-20 2015-06-30 Shine C. Chung Circuit and system of using junction diode as program selector for one-time programmable devices with heat sink
JP5422534B2 (ja) * 2010-10-14 2014-02-19 株式会社東芝 不揮発性抵抗変化素子および不揮発性抵抗変化素子の製造方法
US9076513B2 (en) 2010-11-03 2015-07-07 Shine C. Chung Low-pin-count non-volatile memory interface with soft programming capability
US8913449B2 (en) 2012-03-11 2014-12-16 Shine C. Chung System and method of in-system repairs or configurations for memories
US9019791B2 (en) 2010-11-03 2015-04-28 Shine C. Chung Low-pin-count non-volatile memory interface for 3D IC
US8988965B2 (en) 2010-11-03 2015-03-24 Shine C. Chung Low-pin-count non-volatile memory interface
TWI478168B (zh) * 2010-12-08 2015-03-21 莊建祥 反熔絲記憶體及電子系統
US10192615B2 (en) 2011-02-14 2019-01-29 Attopsemi Technology Co., Ltd One-time programmable devices having a semiconductor fin structure with a divided active region
US10586832B2 (en) 2011-02-14 2020-03-10 Attopsemi Technology Co., Ltd One-time programmable devices using gate-all-around structures
US8848423B2 (en) 2011-02-14 2014-09-30 Shine C. Chung Circuit and system of using FinFET for building programmable resistive devices
JP2013065772A (ja) * 2011-09-20 2013-04-11 Toshiba Corp 半導体装置の製造方法
US8912576B2 (en) 2011-11-15 2014-12-16 Shine C. Chung Structures and techniques for using semiconductor body to construct bipolar junction transistors
US9324849B2 (en) 2011-11-15 2016-04-26 Shine C. Chung Structures and techniques for using semiconductor body to construct SCR, DIAC, or TRIAC
US9136261B2 (en) 2011-11-15 2015-09-15 Shine C. Chung Structures and techniques for using mesh-structure diodes for electro-static discharge (ESD) protection
US8861249B2 (en) 2012-02-06 2014-10-14 Shine C. Chung Circuit and system of a low density one-time programmable memory
US8917533B2 (en) 2012-02-06 2014-12-23 Shine C. Chung Circuit and system for testing a one-time programmable (OTP) memory
US9007804B2 (en) 2012-02-06 2015-04-14 Shine C. Chung Circuit and system of protective mechanisms for programmable resistive memories
US9076526B2 (en) 2012-09-10 2015-07-07 Shine C. Chung OTP memories functioning as an MTP memory
US9183897B2 (en) 2012-09-30 2015-11-10 Shine C. Chung Circuits and methods of a self-timed high speed SRAM
US9324447B2 (en) 2012-11-20 2016-04-26 Shine C. Chung Circuit and system for concurrently programming multiple bits of OTP memory devices
US9178143B2 (en) * 2013-07-29 2015-11-03 Industrial Technology Research Institute Resistive memory structure
US9412473B2 (en) 2014-06-16 2016-08-09 Shine C. Chung System and method of a novel redundancy scheme for OTP
KR102471608B1 (ko) * 2016-06-03 2022-11-29 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그의 구동 방법
US11062786B2 (en) 2017-04-14 2021-07-13 Attopsemi Technology Co., Ltd One-time programmable memories with low power read operation and novel sensing scheme
US10535413B2 (en) 2017-04-14 2020-01-14 Attopsemi Technology Co., Ltd Low power read operation for programmable resistive memories
US10726914B2 (en) 2017-04-14 2020-07-28 Attopsemi Technology Co. Ltd Programmable resistive memories with low power read operation and novel sensing scheme
US11615859B2 (en) 2017-04-14 2023-03-28 Attopsemi Technology Co., Ltd One-time programmable memories with ultra-low power read operation and novel sensing scheme
US10770160B2 (en) 2017-11-30 2020-09-08 Attopsemi Technology Co., Ltd Programmable resistive memory formed by bit slices from a standard cell library
KR102682821B1 (ko) 2019-01-25 2024-07-08 삼성전자주식회사 가변 저항 메모리 장치
US12483429B2 (en) 2021-06-01 2025-11-25 Attopsemi Technology Co., Ltd Physically unclonable function produced using OTP memory

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Also Published As

Publication number Publication date
CN102067315A (zh) 2011-05-18
US8154005B2 (en) 2012-04-10
WO2009152001A1 (en) 2009-12-17
EP2286453A1 (en) 2011-02-23
US20120187361A1 (en) 2012-07-26
TWI582907B (zh) 2017-05-11
US8748859B2 (en) 2014-06-10
CN102067315B (zh) 2013-04-24
TW201007887A (en) 2010-02-16
KR20110039260A (ko) 2011-04-15
US20090309089A1 (en) 2009-12-17

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