TWI582907B - 包括具一供電性隔離柱構成之二極體用的共用二極體組件部分之軌條堆疊的非揮發性記憶體陣列 - Google Patents

包括具一供電性隔離柱構成之二極體用的共用二極體組件部分之軌條堆疊的非揮發性記憶體陣列 Download PDF

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Publication number
TWI582907B
TWI582907B TW098119833A TW98119833A TWI582907B TW I582907 B TWI582907 B TW I582907B TW 098119833 A TW098119833 A TW 098119833A TW 98119833 A TW98119833 A TW 98119833A TW I582907 B TWI582907 B TW I582907B
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layer
strips
diode
diode assembly
doped polysilicon
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TW098119833A
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English (en)
Chinese (zh)
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TW201007887A (en
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夏堪傑
克里斯多夫Ｊ 彼得
凱爾文Ｋ 李
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桑迪士克科技有限責任公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/10—ROM devices comprising bipolar components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays

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  • Semiconductor Memories (AREA)
TW098119833A 2008-06-13 2009-06-12 包括具一供電性隔離柱構成之二極體用的共用二極體組件部分之軌條堆疊的非揮發性記憶體陣列 TWI582907B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/139,435 US8154005B2 (en) 2008-06-13 2008-06-13 Non-volatile memory arrays comprising rail stacks with a shared diode component portion for diodes of electrically isolated pillars

Publications (2)

Publication Number Publication Date
TW201007887A TW201007887A (en) 2010-02-16
TWI582907B true TWI582907B (zh) 2017-05-11

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TW098119833A TWI582907B (zh) 2008-06-13 2009-06-12 包括具一供電性隔離柱構成之二極體用的共用二極體組件部分之軌條堆疊的非揮發性記憶體陣列

Country Status (7)

Country Link
US (2) US8154005B2 (enExample)
EP (1) EP2286453A1 (enExample)
JP (1) JP2011524091A (enExample)
KR (1) KR20110039260A (enExample)
CN (1) CN102067315B (enExample)
TW (1) TWI582907B (enExample)
WO (1) WO2009152001A1 (enExample)

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US8488359B2 (en) 2010-08-20 2013-07-16 Shine C. Chung Circuit and system of using junction diode as program selector for one-time programmable devices
US9251893B2 (en) 2010-08-20 2016-02-02 Shine C. Chung Multiple-bit programmable resistive memory using diode as program selector
US10923204B2 (en) 2010-08-20 2021-02-16 Attopsemi Technology Co., Ltd Fully testible OTP memory
US8804398B2 (en) 2010-08-20 2014-08-12 Shine C. Chung Reversible resistive memory using diodes formed in CMOS processes as program selectors
US9042153B2 (en) 2010-08-20 2015-05-26 Shine C. Chung Programmable resistive memory unit with multiple cells to improve yield and reliability
US9236141B2 (en) 2010-08-20 2016-01-12 Shine C. Chung Circuit and system of using junction diode of MOS as program selector for programmable resistive devices
US9496033B2 (en) 2010-08-20 2016-11-15 Attopsemi Technology Co., Ltd Method and system of programmable resistive devices with read capability using a low supply voltage
US9019742B2 (en) 2010-08-20 2015-04-28 Shine C. Chung Multiple-state one-time programmable (OTP) memory to function as multi-time programmable (MTP) memory
US8649203B2 (en) 2010-08-20 2014-02-11 Shine C. Chung Reversible resistive memory using polysilicon diodes as program selectors
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US9070437B2 (en) 2010-08-20 2015-06-30 Shine C. Chung Circuit and system of using junction diode as program selector for one-time programmable devices with heat sink
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US8830720B2 (en) 2010-08-20 2014-09-09 Shine C. Chung Circuit and system of using junction diode as program selector and MOS as read selector for one-time programmable devices
US9025357B2 (en) 2010-08-20 2015-05-05 Shine C. Chung Programmable resistive memory unit with data and reference cells
US9431127B2 (en) 2010-08-20 2016-08-30 Shine C. Chung Circuit and system of using junction diode as program selector for metal fuses for one-time programmable devices
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US9818478B2 (en) 2012-12-07 2017-11-14 Attopsemi Technology Co., Ltd Programmable resistive device and memory using diode as selector
US10916317B2 (en) 2010-08-20 2021-02-09 Attopsemi Technology Co., Ltd Programmable resistance memory on thin film transistor technology
JP5422534B2 (ja) * 2010-10-14 2014-02-19 株式会社東芝 不揮発性抵抗変化素子および不揮発性抵抗変化素子の製造方法
US9019791B2 (en) 2010-11-03 2015-04-28 Shine C. Chung Low-pin-count non-volatile memory interface for 3D IC
US8988965B2 (en) 2010-11-03 2015-03-24 Shine C. Chung Low-pin-count non-volatile memory interface
US9076513B2 (en) 2010-11-03 2015-07-07 Shine C. Chung Low-pin-count non-volatile memory interface with soft programming capability
US8913449B2 (en) 2012-03-11 2014-12-16 Shine C. Chung System and method of in-system repairs or configurations for memories
US9496265B2 (en) * 2010-12-08 2016-11-15 Attopsemi Technology Co., Ltd Circuit and system of a high density anti-fuse
US8848423B2 (en) 2011-02-14 2014-09-30 Shine C. Chung Circuit and system of using FinFET for building programmable resistive devices
US10586832B2 (en) 2011-02-14 2020-03-10 Attopsemi Technology Co., Ltd One-time programmable devices using gate-all-around structures
US10192615B2 (en) 2011-02-14 2019-01-29 Attopsemi Technology Co., Ltd One-time programmable devices having a semiconductor fin structure with a divided active region
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US9136261B2 (en) 2011-11-15 2015-09-15 Shine C. Chung Structures and techniques for using mesh-structure diodes for electro-static discharge (ESD) protection
US9324849B2 (en) 2011-11-15 2016-04-26 Shine C. Chung Structures and techniques for using semiconductor body to construct SCR, DIAC, or TRIAC
US8912576B2 (en) 2011-11-15 2014-12-16 Shine C. Chung Structures and techniques for using semiconductor body to construct bipolar junction transistors
US8861249B2 (en) 2012-02-06 2014-10-14 Shine C. Chung Circuit and system of a low density one-time programmable memory
US9007804B2 (en) 2012-02-06 2015-04-14 Shine C. Chung Circuit and system of protective mechanisms for programmable resistive memories
US8917533B2 (en) 2012-02-06 2014-12-23 Shine C. Chung Circuit and system for testing a one-time programmable (OTP) memory
US9076526B2 (en) 2012-09-10 2015-07-07 Shine C. Chung OTP memories functioning as an MTP memory
US9183897B2 (en) 2012-09-30 2015-11-10 Shine C. Chung Circuits and methods of a self-timed high speed SRAM
US9324447B2 (en) 2012-11-20 2016-04-26 Shine C. Chung Circuit and system for concurrently programming multiple bits of OTP memory devices
US9178143B2 (en) * 2013-07-29 2015-11-03 Industrial Technology Research Institute Resistive memory structure
US9412473B2 (en) 2014-06-16 2016-08-09 Shine C. Chung System and method of a novel redundancy scheme for OTP
KR102471608B1 (ko) * 2016-06-03 2022-11-29 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그의 구동 방법
US10726914B2 (en) 2017-04-14 2020-07-28 Attopsemi Technology Co. Ltd Programmable resistive memories with low power read operation and novel sensing scheme
US11615859B2 (en) 2017-04-14 2023-03-28 Attopsemi Technology Co., Ltd One-time programmable memories with ultra-low power read operation and novel sensing scheme
US10535413B2 (en) 2017-04-14 2020-01-14 Attopsemi Technology Co., Ltd Low power read operation for programmable resistive memories
US11062786B2 (en) 2017-04-14 2021-07-13 Attopsemi Technology Co., Ltd One-time programmable memories with low power read operation and novel sensing scheme
US10770160B2 (en) 2017-11-30 2020-09-08 Attopsemi Technology Co., Ltd Programmable resistive memory formed by bit slices from a standard cell library
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Also Published As

Publication number Publication date
US8748859B2 (en) 2014-06-10
US20090309089A1 (en) 2009-12-17
KR20110039260A (ko) 2011-04-15
EP2286453A1 (en) 2011-02-23
CN102067315B (zh) 2013-04-24
CN102067315A (zh) 2011-05-18
US20120187361A1 (en) 2012-07-26
JP2011524091A (ja) 2011-08-25
WO2009152001A1 (en) 2009-12-17
US8154005B2 (en) 2012-04-10
TW201007887A (en) 2010-02-16

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