JP2011517855A5 - - Google Patents

Download PDF

Info

Publication number
JP2011517855A5
JP2011517855A5 JP2011504064A JP2011504064A JP2011517855A5 JP 2011517855 A5 JP2011517855 A5 JP 2011517855A5 JP 2011504064 A JP2011504064 A JP 2011504064A JP 2011504064 A JP2011504064 A JP 2011504064A JP 2011517855 A5 JP2011517855 A5 JP 2011517855A5
Authority
JP
Japan
Prior art keywords
insulating
switching element
conductive electrode
resistivity switching
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2011504064A
Other languages
English (en)
Japanese (ja)
Other versions
JP5044042B2 (ja
JP2011517855A (ja
Filing date
Publication date
Priority claimed from US12/216,110 external-priority patent/US7812335B2/en
Application filed filed Critical
Publication of JP2011517855A publication Critical patent/JP2011517855A/ja
Publication of JP2011517855A5 publication Critical patent/JP2011517855A5/ja
Application granted granted Critical
Publication of JP5044042B2 publication Critical patent/JP5044042B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2011504064A 2008-04-11 2009-04-01 側壁構造化スイッチャブル抵抗器セル Expired - Fee Related JP5044042B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US7109308P 2008-04-11 2008-04-11
US61/071,093 2008-04-11
US12/216,110 2008-06-30
US12/216,110 US7812335B2 (en) 2008-04-11 2008-06-30 Sidewall structured switchable resistor cell
PCT/US2009/039126 WO2009126492A1 (en) 2008-04-11 2009-04-01 Sidewall structured switchable resistor cell

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012130412A Division JP5395213B2 (ja) 2008-04-11 2012-06-08 側壁構造化スイッチャブル抵抗器セル

Publications (3)

Publication Number Publication Date
JP2011517855A JP2011517855A (ja) 2011-06-16
JP2011517855A5 true JP2011517855A5 (enExample) 2012-05-24
JP5044042B2 JP5044042B2 (ja) 2012-10-10

Family

ID=40839545

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2011504064A Expired - Fee Related JP5044042B2 (ja) 2008-04-11 2009-04-01 側壁構造化スイッチャブル抵抗器セル
JP2012130412A Expired - Fee Related JP5395213B2 (ja) 2008-04-11 2012-06-08 側壁構造化スイッチャブル抵抗器セル

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2012130412A Expired - Fee Related JP5395213B2 (ja) 2008-04-11 2012-06-08 側壁構造化スイッチャブル抵抗器セル

Country Status (7)

Country Link
US (1) US7812335B2 (enExample)
EP (1) EP2277201A1 (enExample)
JP (2) JP5044042B2 (enExample)
KR (1) KR101532203B1 (enExample)
CN (2) CN101999170B (enExample)
TW (1) TWI380437B (enExample)
WO (1) WO2009126492A1 (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7830698B2 (en) * 2008-04-11 2010-11-09 Sandisk 3D Llc Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same
CN102144309A (zh) * 2008-07-08 2011-08-03 桑迪士克3D有限责任公司 基于碳的电阻率-切换材料及其形成方法
WO2010078467A1 (en) * 2008-12-31 2010-07-08 Sandisk 3D, Llc Modulation of resistivity in carbon-based read-writeable materials
EP2478572A4 (en) * 2009-09-18 2013-11-13 Hewlett Packard Development Co LUMINAIRE DIODE WITH METAL DIELECTRIC METAL AFUBAU
JP5439147B2 (ja) 2009-12-04 2014-03-12 株式会社東芝 抵抗変化メモリ
US8374018B2 (en) * 2010-07-09 2013-02-12 Crossbar, Inc. Resistive memory using SiGe material
CN102332454B (zh) * 2010-07-15 2013-04-10 复旦大学 一次可编程存储单元、存储器及其制备方法
JP5572056B2 (ja) * 2010-10-20 2014-08-13 株式会社東芝 記憶装置及びその製造方法
US8502185B2 (en) * 2011-05-31 2013-08-06 Crossbar, Inc. Switching device having a non-linear element
US8482078B2 (en) * 2011-05-10 2013-07-09 International Business Machines Corporation Integrated circuit diode
US8394682B2 (en) 2011-07-26 2013-03-12 Micron Technology, Inc. Methods of forming graphene-containing switches
US8879299B2 (en) 2011-10-17 2014-11-04 Sandisk 3D Llc Non-volatile memory cell containing an in-cell resistor
KR20130043533A (ko) * 2011-10-20 2013-04-30 삼성전자주식회사 도전성 버퍼 패턴을 갖는 비-휘발성 메모리소자 및 그 형성 방법
US8710481B2 (en) 2012-01-23 2014-04-29 Sandisk 3D Llc Non-volatile memory cell containing a nano-rail electrode
KR20130087233A (ko) 2012-01-27 2013-08-06 삼성전자주식회사 가변 저항 메모리 장치 및 그 형성 방법
EP2820677B1 (en) 2012-02-29 2017-04-05 Hewlett Packard Enterprise Development LP Memristor with channel region in thermal equilibrium with containing region
US8658476B1 (en) 2012-04-20 2014-02-25 Crossbar, Inc. Low temperature P+ polycrystalline silicon material for non-volatile memory device
WO2014050198A1 (ja) * 2012-09-28 2014-04-03 日本電気株式会社 スイッチング素子およびスイッチング素子の製造方法
CN104051619B (zh) * 2013-03-13 2017-07-04 旺宏电子股份有限公司 具有相变元件的存储器单元及其形成方法
US9093635B2 (en) * 2013-03-14 2015-07-28 Crossbar, Inc. Controlling on-state current for two-terminal memory
KR101458566B1 (ko) * 2013-05-21 2014-11-07 재단법인대구경북과학기술원 정류소자 및 그의 제조 방법
KR102225782B1 (ko) 2014-07-28 2021-03-10 삼성전자주식회사 가변 저항 메모리 장치 및 그 제조 방법
US10062842B2 (en) 2015-01-30 2018-08-28 Hewlett Packard Enterprise Development Lp Composite selector electrodes
US9806256B1 (en) 2016-10-21 2017-10-31 Sandisk Technologies Llc Resistive memory device having sidewall spacer electrode and method of making thereof
KR102474306B1 (ko) * 2018-02-20 2022-12-06 에스케이하이닉스 주식회사 크로스-포인트 어레이 장치 및 이의 제조 방법
KR102736298B1 (ko) 2019-05-03 2024-11-29 삼성전자주식회사 가변 저항 메모리 소자
US10991879B2 (en) 2019-06-26 2021-04-27 Western Digital Technologies, Inc. Multi-level phase change memory cells and method of making the same
CN112018234B (zh) * 2020-07-22 2021-10-15 厦门半导体工业技术研发有限公司 半导体器件和半导体器件的制造方法
US12446236B2 (en) * 2020-09-11 2025-10-14 W&Wram Devices, Inc. Resistive random-access memory using stacked technology
US11991938B2 (en) * 2020-12-29 2024-05-21 Globalfoundries Singapore Pte. Ltd. Memory devices and methods of forming memory devices
US11997932B2 (en) * 2021-03-31 2024-05-28 Crossbar, Inc. Resistive switching memory having confined filament formation and methods thereof
DE112021007796B4 (de) * 2021-06-09 2025-04-10 Microchip Technology Incorporated Integrierte schaltungsstrukturen mit kohlenstoffnanoröhren- (cnt-) speicherzellenelementen und konstruktionsverfahren

Family Cites Families (96)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8400959D0 (en) 1984-01-13 1984-02-15 British Petroleum Co Plc Semiconductor device
US4646266A (en) 1984-09-28 1987-02-24 Energy Conversion Devices, Inc. Programmable semiconductor structures and methods for using the same
US5166760A (en) 1990-02-28 1992-11-24 Hitachi, Ltd. Semiconductor Schottky barrier device with pn junctions
EP0695494B1 (en) 1993-04-23 2001-02-14 Irvine Sensors Corporation Electronic module comprising a stack of ic chips
US5555204A (en) 1993-06-29 1996-09-10 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device
US5535156A (en) 1994-05-05 1996-07-09 California Institute Of Technology Transistorless, multistable current-mode memory cells and memory arrays and methods of reading and writing to the same
US5559732A (en) 1994-12-27 1996-09-24 Syracuse University Branched photocycle optical memory device
US5751012A (en) 1995-06-07 1998-05-12 Micron Technology, Inc. Polysilicon pillar diode for use in a non-volatile memory cell
US5693556A (en) 1995-12-29 1997-12-02 Cypress Semiconductor Corp. Method of making an antifuse metal post structure
US5723358A (en) 1996-04-29 1998-03-03 Vlsi Technology, Inc. Method of manufacturing amorphous silicon antifuse structures
US5835396A (en) 1996-10-17 1998-11-10 Zhang; Guobiao Three-dimensional read-only memory
US5915167A (en) 1997-04-04 1999-06-22 Elm Technology Corporation Three dimensional structure memory
NO972803D0 (no) 1997-06-17 1997-06-17 Opticom As Elektrisk adresserbar logisk innretning, fremgangsmåte til elektrisk adressering av samme og anvendelse av innretning og fremgangsmåte
NO973993L (no) 1997-09-01 1999-03-02 Opticom As Leseminne og leseminneinnretninger
US6111784A (en) 1997-09-18 2000-08-29 Canon Kabushiki Kaisha Magnetic thin film memory element utilizing GMR effect, and recording/reproduction method using such memory element
US5991193A (en) 1997-12-02 1999-11-23 International Business Machines Corporation Voltage biasing for magnetic ram with magnetic tunnel memory cells
US6483736B2 (en) * 1998-11-16 2002-11-19 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
US6034882A (en) 1998-11-16 2000-03-07 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
US6377502B1 (en) 1999-05-10 2002-04-23 Kabushiki Kaisha Toshiba Semiconductor device that enables simultaneous read and write/erase operation
US6187617B1 (en) 1999-07-29 2001-02-13 International Business Machines Corporation Semiconductor structure having heterogeneous silicide regions and method for forming same
US6306718B1 (en) 2000-04-26 2001-10-23 Dallas Semiconductor Corporation Method of making polysilicon resistor having adjustable temperature coefficients
US8575719B2 (en) 2000-04-28 2013-11-05 Sandisk 3D Llc Silicon nitride antifuse for use in diode-antifuse memory arrays
US6420215B1 (en) 2000-04-28 2002-07-16 Matrix Semiconductor, Inc. Three-dimensional memory array and method of fabrication
US6777773B2 (en) 2000-08-14 2004-08-17 Matrix Semiconductor, Inc. Memory cell with antifuse layer formed at diode junction
KR100821456B1 (ko) 2000-08-14 2008-04-11 샌디스크 쓰리디 엘엘씨 밀집한 어레이 및 전하 저장 장치와, 그 제조 방법
US6486065B2 (en) 2000-12-22 2002-11-26 Matrix Semiconductor, Inc. Method of forming nonvolatile memory device utilizing a hard mask
US6541312B2 (en) 2000-12-22 2003-04-01 Matrix Semiconductor, Inc. Formation of antifuse structure in a three dimensional memory
US6574130B2 (en) 2001-07-25 2003-06-03 Nantero, Inc. Hybrid circuit having nanotube electromechanical memory
US6706402B2 (en) 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US6567301B2 (en) 2001-08-09 2003-05-20 Hewlett-Packard Development Company, L.P. One-time programmable unit memory cell based on vertically oriented fuse and diode and one-time programmable memory using the same
US6584029B2 (en) 2001-08-09 2003-06-24 Hewlett-Packard Development Company, L.P. One-time programmable memory using fuse/anti-fuse and vertically oriented fuse unit memory cells
US6525953B1 (en) 2001-08-13 2003-02-25 Matrix Semiconductor, Inc. Vertically-stacked, field-programmable, nonvolatile memory and method of fabrication
US6580144B2 (en) * 2001-09-28 2003-06-17 Hewlett-Packard Development Company, L.P. One time programmable fuse/anti-fuse combination based memory cell
US6693823B2 (en) 2002-01-02 2004-02-17 Intel Corporation Minimization of metal migration in magnetic random access memory
US6559516B1 (en) 2002-01-16 2003-05-06 Hewlett-Packard Development Company Antifuse structure and method of making
US7038248B2 (en) 2002-02-15 2006-05-02 Sandisk Corporation Diverse band gap energy level semiconductor device
US6853049B2 (en) 2002-03-13 2005-02-08 Matrix Semiconductor, Inc. Silicide-silicon oxide-semiconductor antifuse device and method of making
US6778421B2 (en) 2002-03-14 2004-08-17 Hewlett-Packard Development Company, Lp. Memory device array having a pair of magnetic bits sharing a common conductor line
US6548313B1 (en) 2002-05-31 2003-04-15 Intel Corporation Amorphous carbon insulation and carbon nanotube wires
US7081377B2 (en) 2002-06-27 2006-07-25 Sandisk 3D Llc Three-dimensional memory
US6952043B2 (en) 2002-06-27 2005-10-04 Matrix Semiconductor, Inc. Electrically isolated pillars in active devices
US7071008B2 (en) 2002-08-02 2006-07-04 Unity Semiconductor Corporation Multi-resistive state material that uses dopants
US6834008B2 (en) 2002-08-02 2004-12-21 Unity Semiconductor Corporation Cross point memory array using multiple modes of operation
US7105108B2 (en) 2002-08-15 2006-09-12 Advanced Energy Technology Inc. Graphite intercalation and exfoliation process
JP4509467B2 (ja) * 2002-11-08 2010-07-21 シャープ株式会社 不揮発可変抵抗素子、及び記憶装置
US6813177B2 (en) 2002-12-13 2004-11-02 Ovoynx, Inc. Method and system to store information
US7618850B2 (en) 2002-12-19 2009-11-17 Sandisk 3D Llc Method of making a diode read/write memory cell in a programmed state
US20050226067A1 (en) 2002-12-19 2005-10-13 Matrix Semiconductor, Inc. Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor material
US7800932B2 (en) * 2005-09-28 2010-09-21 Sandisk 3D Llc Memory cell comprising switchable semiconductor memory element with trimmable resistance
US7176064B2 (en) 2003-12-03 2007-02-13 Sandisk 3D Llc Memory cell comprising a semiconductor junction diode crystallized adjacent to a silicide
US8637366B2 (en) 2002-12-19 2014-01-28 Sandisk 3D Llc Nonvolatile memory cell without a dielectric antifuse having high- and low-impedance states
JP2006511965A (ja) 2002-12-19 2006-04-06 マトリックス セミコンダクター インコーポレイテッド 高密度不揮発性メモリを製作するための改良された方法
US6946719B2 (en) 2003-12-03 2005-09-20 Matrix Semiconductor, Inc Semiconductor device including junction diode contacting contact-antifuse unit comprising silicide
US7285464B2 (en) 2002-12-19 2007-10-23 Sandisk 3D Llc Nonvolatile memory cell comprising a reduced height vertical diode
DE60323202D1 (de) 2003-02-21 2008-10-09 St Microelectronics Srl Phasenwechselspeicheranordnung
US7113426B2 (en) 2003-03-28 2006-09-26 Nantero, Inc. Non-volatile RAM cell and array using nanotube switch position for information state
US6914801B2 (en) 2003-05-13 2005-07-05 Ovonyx, Inc. Method of eliminating drift in phase-change memory
US7511352B2 (en) 2003-05-19 2009-03-31 Sandisk 3D Llc Rail Schottky device and method of making
US6873543B2 (en) 2003-05-30 2005-03-29 Hewlett-Packard Development Company, L.P. Memory device
US6815704B1 (en) 2003-09-04 2004-11-09 Silicon Storage Technology, Inc. Phase change memory device employing thermally insulating voids
JP2005109659A (ja) 2003-09-29 2005-04-21 Toshiba Corp 半導体集積回路装置
US6847544B1 (en) 2003-10-20 2005-01-25 Hewlett-Packard Development Company, L.P. Magnetic memory which detects changes between first and second resistive states of memory cell
US6999366B2 (en) 2003-12-03 2006-02-14 Hewlett-Packard Development Company, Lp. Magnetic memory including a sense result category between logic states
US7474000B2 (en) 2003-12-05 2009-01-06 Sandisk 3D Llc High density contact to relaxed geometry layers
US7172840B2 (en) 2003-12-05 2007-02-06 Sandisk Corporation Photomask features with interior nonprinting window using alternating phase shifting
US6951780B1 (en) 2003-12-18 2005-10-04 Matrix Semiconductor, Inc. Selective oxidation of silicon in diode, TFT, and monolithic three dimensional memory arrays
US20050221200A1 (en) 2004-04-01 2005-10-06 Matrix Semiconductor, Inc. Photomask features with chromeless nonprinting phase shifting window
US7307013B2 (en) 2004-06-30 2007-12-11 Sandisk 3D Llc Nonselective unpatterned etchback to expose buried patterned features
US7405465B2 (en) 2004-09-29 2008-07-29 Sandisk 3D Llc Deposited semiconductor structure to minimize n-type dopant diffusion and method of making
US7224013B2 (en) 2004-09-29 2007-05-29 Sandisk 3D Llc Junction diode comprising varying semiconductor compositions
US20060108667A1 (en) 2004-11-22 2006-05-25 Macronix International Co., Ltd. Method for manufacturing a small pin on integrated circuits or other devices
KR100719346B1 (ko) 2005-04-19 2007-05-17 삼성전자주식회사 저항 메모리 셀, 그 형성 방법 및 이를 이용한 저항 메모리배열
US20060250836A1 (en) 2005-05-09 2006-11-09 Matrix Semiconductor, Inc. Rewriteable memory cell comprising a diode and a resistance-switching material
US7812404B2 (en) 2005-05-09 2010-10-12 Sandisk 3D Llc Nonvolatile memory cell comprising a diode and a resistance-switching material
US7345907B2 (en) 2005-07-11 2008-03-18 Sandisk 3D Llc Apparatus and method for reading an array of nonvolatile memory cells including switchable resistor memory elements
US7426128B2 (en) 2005-07-11 2008-09-16 Sandisk 3D Llc Switchable resistive memory with opposite polarity write pulses
US7601995B2 (en) 2005-10-27 2009-10-13 Infineon Technologies Ag Integrated circuit having resistive memory cells
US7615770B2 (en) * 2005-10-27 2009-11-10 Infineon Technologies Ag Integrated circuit having an insulated memory
US7397060B2 (en) * 2005-11-14 2008-07-08 Macronix International Co., Ltd. Pipe shaped phase change memory
US20070111429A1 (en) * 2005-11-14 2007-05-17 Macronix International Co., Ltd. Method of manufacturing a pipe shaped phase change memory
JP4989631B2 (ja) * 2006-03-30 2012-08-01 パナソニック株式会社 不揮発性記憶素子
JP2007281208A (ja) * 2006-04-07 2007-10-25 Matsushita Electric Ind Co Ltd 多層抵抗変化素子アレイ、抵抗変化装置、多層不揮発性記憶素子アレイ、及び不揮発性記憶装置
US7575984B2 (en) * 2006-05-31 2009-08-18 Sandisk 3D Llc Conductive hard mask to protect patterned features during trench etch
US7492630B2 (en) 2006-07-31 2009-02-17 Sandisk 3D Llc Systems for reverse bias trim operations in non-volatile memory
KR100881181B1 (ko) * 2006-11-13 2009-02-05 삼성전자주식회사 반도체 메모리 소자 및 그 제조 방법
US7982209B2 (en) 2007-03-27 2011-07-19 Sandisk 3D Llc Memory cell comprising a carbon nanotube fabric element and a steering element
US7667999B2 (en) 2007-03-27 2010-02-23 Sandisk 3D Llc Method to program a memory cell comprising a carbon nanotube fabric and a steering element
KR100888617B1 (ko) * 2007-06-15 2009-03-17 삼성전자주식회사 상변화 메모리 장치 및 그 형성 방법
WO2009015298A2 (en) * 2007-07-25 2009-01-29 Intermolecular, Inc. Nonvolatile memory elements
US8665629B2 (en) 2007-09-28 2014-03-04 Qimonda Ag Condensed memory cell structure using a FinFET
JP5374865B2 (ja) * 2007-12-10 2013-12-25 富士通株式会社 抵抗変化素子、これを用いた記憶装置、及びそれらの作製方法
US7764534B2 (en) 2007-12-28 2010-07-27 Sandisk 3D Llc Two terminal nonvolatile memory using gate controlled diode elements
JP5364280B2 (ja) * 2008-03-07 2013-12-11 株式会社東芝 不揮発性記憶装置及びその製造方法
US7859887B2 (en) 2008-04-11 2010-12-28 Sandisk 3D Llc Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same
US7723180B2 (en) 2008-04-11 2010-05-25 Sandisk 3D Llc Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same
US7830698B2 (en) 2008-04-11 2010-11-09 Sandisk 3D Llc Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same

Similar Documents

Publication Publication Date Title
JP2011517855A5 (enExample)
CN106847821B (zh) 半导体结构及其形成方法
CN100470788C (zh) 半导体存储器件和制造方法
US10224372B2 (en) Three-dimensional memory device with vertical bit lines and replacement word lines and method of making thereof
JP2011222938A5 (enExample)
US10290681B2 (en) Array of hole-type surround gate vertical field effect transistors and method of making thereof
TW200950078A (en) Sidewall structured switchable resistor cell
US10468596B2 (en) Damascene process for forming three-dimensional cross rail phase change memory devices
JP2006237605A5 (enExample)
US8933430B1 (en) Variable resistance memory device and method of manufacturing the same
KR101748949B1 (ko) 반도체 메모리 소자 및 이의 제조 방법
US20140166965A1 (en) Resistive memory device and fabrication method thereof
CN107732007A (zh) 可变电阻存储器件及其制造方法
US9859493B2 (en) Variable resistance memory device and method of manufacturing the same
CN103187523B (zh) 半导体器件及其制造方法
US20150207068A1 (en) Resistive memory device and fabrication method thereof
JP2008042166A (ja) 縦型ゲート半導体装置及びその製造方法
KR20090090003A (ko) 상변화 메모리 소자 제조 방법
US7323357B2 (en) Method for manufacturing a resistively switching memory cell and memory device based thereon
JP2013084850A (ja) 半導体装置及びその製造方法
KR20100110631A (ko) 상변화 기억 소자의 제조방법
TW200818475A (en) Method of production of a semiconductor memory device and semiconductor memory device
KR20230143478A (ko) 반도체 메모리 소자
CN106298783B (zh) 存储元件及其制造方法
EP4432803A1 (en) Semiconductor memory device