TWI380437B - Sidewall structured switchable resistor cell - Google Patents
Sidewall structured switchable resistor cell Download PDFInfo
- Publication number
- TWI380437B TWI380437B TW098112104A TW98112104A TWI380437B TW I380437 B TWI380437 B TW I380437B TW 098112104 A TW098112104 A TW 098112104A TW 98112104 A TW98112104 A TW 98112104A TW I380437 B TWI380437 B TW I380437B
- Authority
- TW
- Taiwan
- Prior art keywords
- insulating
- resistivity switching
- switching element
- conductive electrode
- resistivity
- Prior art date
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- 239000000463 material Substances 0.000 claims description 41
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- 150000004706 metal oxides Chemical group 0.000 claims description 19
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 239000002131 composite material Substances 0.000 claims description 4
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
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- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
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- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
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- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 235000001674 Agaricus brunnescens Nutrition 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- 244000145845 chattering Species 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
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- 229910052747 lanthanoid Inorganic materials 0.000 description 1
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- 150000002736 metal compounds Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000001397 quillaja saponaria molina bark Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
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- 230000000717 retained effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
- H10B63/22—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the metal-insulator-metal type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/023—Formation of switching materials, e.g. deposition of layers by chemical vapor deposition, e.g. MOCVD, ALD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/068—Shaping switching materials by processes specially adapted for achieving sub-lithographic dimensions, e.g. using spacers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
- H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
- H10N70/8265—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices on sidewalls of dielectric structures, e.g. mesa-shaped or cup-shaped devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
- H10N70/8845—Carbon or carbides
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Semiconductor Memories (AREA)
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1380437 六、發明說明: 【發明所屬之技術領域】 本發明一般而言係關於一種製造一半導體裝置之方法, 且更特定而言係關於一種製造一半導體非揮發性記憶體單 元之方法。 本申請案主張2008年4月11曰提出申請之美國臨時申請 案61/071,093及2008年6月30日提出申請之美國申請案 12/216,110之權益,此兩者之全文皆以引用方式併入本文 中。 【先前技術】 由半導體材料製成之裝置用於形成電組件及系統中之記 憶體電路。記憶體電路因資料及指令集儲存於其中而係此 等裝置之骨幹。最大化此等電路上每單位面積之記憶體元 件數目使其成本最小化且因此係此等電路設計中之一主要 動機。 圖1圖解闞釋一實例性先前技術記憶體單元2〇,該記憶 體單元包含一垂直定向、圓柱柱形接面二極體22作為該單 元之引導元件及一儲存元件24(例如,一反熔絲電介質或 一金屬氧化物電阻率切換層二極體22及儲存元件以係 插入於頂部導體或電極26與底部導體或電極28之間。垂直 定向之接面二極體22包含具有一第一導電類型(例如,11型) 之一經重摻雜半導體區域30、一係未經摻雜半導體材料或 經輕摻雜半導體材料之令間區域32(其將被稱作一本質區 域)及具有第二導電類型(例如,p型)之一經重摻雜半導體 •4- 1380437 區域34以形成一p_i_n二極體。若需要,則可顛倒p及η型區 域之位置。接面二極體22之半導體材料一般係矽 '鍺、或 一石夕及/或錯合金。亦可使用其他半導體材料。接面二極 體22及儲存元件24係串聯地配置於底部導體28與頂部導體 26之間’該等導體可由一金屬(例如,鎢及/或TiN)形成。 儲存元件24可位於二極體22上面或下面。參照圖ία,頒予 Hemer等人且標題為「出的-以如办 Memory Cell」之美國專利6 952 030(下文稱作「〇3〇專 利」且因此以全文W用的方式併入本文中)揭示一實例性 非揮發性記憶體單元。 金屬氧化物可切換電阻器之電阻可係太低而不能由一三 維(3D)二極體陣列有效地感測。一低重設電流一般比一高 重設電流較佳,且因此電阻器元件之電阻一般較佳係高。 由於金屬氧化物元件24係設置於一個二極體柱22上方,因 此該氧化物元件之電阻可係太低,由此導致一不期望之高 重設電流。此外,金屬氧化物電阻器材料可由於製作期間 之蝕刻而損壞且因此不能提供切換功能。 【發明内容】 一種製造一記憶體裝置之方法,其包含:形成一第一導 電電極在該第一導電電極上方形成一絕緣結構;在該絕 緣結構之一側壁上形成一電阻率切換元件;在該電阻率切 換7C件上方形成一第二導電電極;及在該第一導電電極與 該第二導電電極之間形成與該電阻率切換元件串聯之一引 導元件,其中該電阻率切換元件在自該第一導電電極至該 1J8U4J/ 第一導電電極之一第 元件在垂直於該第一 【實施方式】 -方向上之一高度大於該電阻率切換 方向之一第二方向上之一厚度。 =明者認識到儲存本文中亦稱作—電阻率切換 凡❹之電阻可藉由"'幾何效應增加,其中該電阻率切換 =與引導元件串聯地形成在絕緣結構之—側壁上。在此 ’「電阻率切換元件在自底部導電電極至上部導電電 極之-「垂直」方向上之高度大於該電阻率切換元件在垂 直於該「垂直」方向之一第二方向上之一厚度。該電阻率 切換π件可係位於-絕緣結構之侧壁上之—層二元金屬氧 化物薄層’且仍經提供而與下部電極與上部電極之間的一 個二極體引導元件串聯。 一電阻率切換材料24之電阻R可由以下方程式計算: R=P*t/(L*W), Π] 其中Ρ係材料之電阻率,t係層之高度,(Lslew)係導電路徑 之面積。因此,層之電阻可高度相依於幾何形狀。圖lB、 1C、2A及2B圖解闡釋電阻之此相依性。圖⑺及1C圖解闡 釋位於二極體(為清蜥起見’將其自圖1B及1C省略,但其 可位於元件24上面或下面)頂部上之電阻率切換元件24。 由於在元件24切換至低電阻率狀態期間形成之導電細絲25 之L*W面積不受單元之結構限制,因此該導電細絲之電阻 可係一相對低之電阻^典型之金屬氧化物可切換電阻材料 可形成具有在1 κ歐姆至ίο κ歐姆範圍中之電阻之細絲,該 範圍之電阻係比由經形成以用於三維二極體陣列中之二極 1380437 體通常所達成之電阻低的電阻。三維二極體陣列中之二極 體無法可靠地重設相對低電阻細絲。 圖2A及2B圖解闡釋根據本發明一項實施例之一記憶體 單7L結構一部分之側剖視圖及俯視圖,其中為清晰起見而 再次省略二極體,但該二極體係位於電極26與28之間的電 阻率切換元件14上面或下面且與其串聯。在此實施例中, 電阻率切換元件14係形成於一絕緣結構13之一側壁上。在 此組態中,電阻係由以下方程式計算: R=p*T/(l*W) [2] 其中1係元件14在絕緣結構側壁上之沈積厚度。長度1可顯 著小於圖1B及1C之長度L。相比於圖iB及1C之電阻,圖 2A及2B組態中之電阻增加到(L/1)倍。高度τ係覆蓋絕緣結 構13之側壁之電阻率切換元件14之高度。高度丁可等於先 刖之平面厚度t,且在某些情形中可大於圖⑺及1C之平面 厚度t。 圖2A及2B中所示之本發明實施例之一個優點係低電阻 狀態之相依於高度T之量值之增加。注意,對於某些材料 而言’切換至高電阻之區域可小於T,如圖3中所示。如可 自上述圖看到,在圖1B及ICt所示的先前技術組態中评傾 向於大於t,且在圖2A及2B中所示本發明實施例之側壁組 態中W傾向於小於側壁層之厚度1可小於細絲區域之典 型尺寸。由於丨可小於先前技術細絲直徑,因此在某些材 料中其亦傾向於減少細絲在W尺寸上之擴展以用於進一步 增加電阻。 1380437 本發明實施例中電阻率切換元件之電阻較少相依於可變 細絲形成之大小,此乃因其由尺寸1限制β由於在某些材 料中穿過電阻率切換元件之電流路徑之剖面面積限制為小 於典型細絲大小,因此重設電流亦將係較低。減小之重設 電流及切換及陣列線中相關聯之丨R降低係允許重設電壓及 功率在包括侧壁電阻率切換元件之記憶體陣列中減小之一 顯著優點。三維二極體陣列_之二極體能夠可靠地重設本 發明貫施例中所形成之相對高電阻細絲。 在圖1中,L傾向於隨t而增加且可係大約四倍於t,舉例 而言,t係5奈米而L係20奈米。但在圖2中,丨不受τ影響以 使得T可藉由製程選擇而增加;舉例而言,電阻率切換材 料:之高度T可大於5奈米(例如大於2〇奈米)且厚度i可小於 2〇奈来(例如小於5奈米因此’電阻可自圖…斤圖解闡 釋之電阻增加到(L/1)乘(T/t)倍,在此實例中增加16倍。 圖3_7圖解闞釋根據本發明實施例之具有各種絕緣結構 ^之實例性記憶體單元結構。電阻率切換元件14可具有不 ,形狀。舉例而言’其可係環形,環繞該絕緣結構;或其 了位於—絕緣材料中之一渠溝内部。類似地,該絕緣結構 °具有不同形狀’例如-柱形狀或軌形狀。 於^ 3中所不,柱形二極體22(圖丨八中詳細顯示)係形成 二下2電極28(其亦係顯示於圖lt)上方。二極體22可由任 妙適。之半導體材料製成,諸如可係多晶、單晶或非晶之 板你鍺、矽鍺或其他化合物半導體材料。電極28位於一基 (J如,一半導體晶圓(包含矽或化合物半導體晶圓)或一 1380437 玻璃、塑膠或金屬基板)上或上方。電極28可包括一金屬 (例如,鎢、鋁或其合金)或一金屬化合物(例如,氬化 鈦)。 然後,一可選導電障壁16形成於二極體22上方。障壁16 可包括任一導電材料,例如氮化鈦。然後,絕緣結構13形 成於障壁16上方。絕緣結構13可包括任一適合之絕緣材 料,例如,氡化矽或氮化矽或一有機絕緣材料。只要結構 13含有一侧壁15,其可具有任一適合之形狀,例如,執形 狀或柱形狀》 然後,至少一個電阻率切換元件14形成於絕緣結構13之 至少一個侧壁上。若該結構係圓柱形(如圖2Β中所示),則 其僅具有一個侧壁15。電阻率切換元件14可包括一溶絲、 多晶矽記憶體效應材料、一金屬氧化物(例如,二元金屬 氧化物(例如氧化鎳)或一可切換複合金屬氧化物(例如,鈣 欽礦氧化物))、碳奈米管、石墨烯可切換電阻材料、其他 碳電阻率切換材料(例如,非晶、多晶或微晶碳)、相變材 料、電解質切換材料、可切換複合金屬氧化物、導電橋元 件或可切換聚合物。電阻率切換元件之電阻率可回應於一 提供於圖1八尹所示之電極26與28之間的正向及/或反向偏 壓而增加或減少。 電阻率切換元件14可藉由任一適合方法而形成於絕緣結 構13上’例如’化學氣相沈積、物理氣相沈積(例如濺射) 等等°元件14可位於絕緣結構13之頂部表面上方及絕緣結 構13之側壁15上。另一選擇為,元件14(例如一金屬氧化 1380437 物絕緣層)形成於絕緣結構13上方且隨後藉由CMP或其他 方法平坦化以移除元件14位於結構13上部表面上之厚度l〇 且曝露絕緣結構13之一上部表面。如圖3中所示,元件14 之作用切換區域18具有一長度l,該長度可由於ρν〇沈積 之遮蔽效應而薄於該元件之平面厚度。此侧壁在區域18中 頸縮增加元件14之電阻。 在圖4中所示之一替代實施例中,一金屬或金屬氮化物 膜(例如氮化鈦膜)沈積於結構13上方且隨後藉由CMp或其 他平坦化方法自絕緣結構頂部選擇性地移除。經圖案化之 膜隨後在氧化氣氛中被氧化,由此形成一金屬氧化物或氧 氮化物電阻率切換元件14,例如,氧氮化鈦元件。由於上 述之頸縮,因此該元件之作用區域18可完全轉換為一絕緣 金屬氧化物或氧氮化物,而元件丨4之上部部分42可保持為 導電金屬或金屬氮化物^為清晰起見,在圖4中擴大元 件14之厚度《元件14可具有一1〇至3〇奈米之垂直厚度。 在圖4之實施例令,結構13之側壁15包括具有一形成於 一絕緣層13(例如一層氧化矽層)中之孔或渠溝“之一個或 多侧壁該孔或渠溝曝露底部電極28以允許電阻率切換 材料電接觸底部電極28。若需要,則可用一絕緣填料材料 44(例如,氧化矽或有機材料)填充且藉由CMP或其他適合 方法平坦化電阻率切換元件14中餘留之凹槽以曝露元件Μ 之上部表面。 人如圖4中所示’底部電極28可包括TiN屠與嫣層之一組 一 卜如圖4中所示,二極體22位於電阻率切換元件 1380437 14及障壁16上面。然而’該次岸可益你丨口 敦人序了顛倒且二極體22可形成 於障壁16及元件14下面。若黨要,一 ,^ 右冩要 上部障壁46可形成於 二極體22與上部電極26之間。上部障壁化可包括一石夕化欽 層(例如,藉由使-欽層與二極體之多晶石夕材料反應而形 成之一 C49相矽化鈦層)及一 Ti/TiN雙層。
如以上所論述,二極體22充當該單元之一弓丨導元件。舉 例而言,記憶體單元可包含一垂直定向、圓柱柱形接面二 極體。本文中所使用之術語「接面二極體」係指具有非歐 姆導電性質之-半導體裝置,.該半導體裝置具有兩個端子 電極’且係由在-個電極處為卩型且在另_電極處為η型之 半導電材料製成。實例包含:"二極體及"二極體,該 等二極體具有相接觸之一 ρ型半導體材料及一 η型半導體材 料’例如齊納二極體;及ρ_“η二極體,其中一本質(未經 摻雜)半導體材料插入於該ρ型半導體材料與該〇型半導體 材料之間。在其他實施财,可使用—包括ΜΙΜ或觀Μ 結構之穿隧二極體。 在圖5中所示之另一替代實施例中,電阻率切換元件14 包括一絕緣層,例如,以一絕緣狀態沈積於孔或渠溝“内 部之一金屬氧化物層(例如Α12〇3)(替代如圖4中所示氧化一 導電層)。因此,使用一鑲嵌類型製程來形成該元件。如 圖5中所不,形成元件14之絕緣層不必經平坦化且可在結 構13上方延伸。此外,如圖5中所示,二極體22可相對於 元件14偏移以確保元件14接觸二極體22。如圖5中所示, 7L件14可係5奈米至30奈米高,而電極28可係大約2〇〇奈米 1380437 尚0 在圖6A及6B各自之側視及俯視圖中所示之另一實施例 中’絕緣結構13可包括絕緣轨形結構13。可藉由將一絕緣 層(例如,氧化矽或氮化矽)圖案化為絕緣結構軌13來形成 該等軌。軌13可在與下部電極28(舉例而言,TiN/W/TiN電 極)相同之方向上延伸。較佳地,軌13自電極28偏移以使 得每一軌13之側壁15位於毗鄰電極28之上部表面上方。電 阻率切換元件14隨後形成於軌13之側壁15上。因此,底部 電極28曝露於她鄰轨13之間。由於執13係與電極28及二極 體22部分地錯位,因此此允許電阻率切換元件14與一相應 之下伏電極28及一相應之上覆電極22相接觸地定位。舉例 而言’可藉由在軌13上方沈積一金屬氧化物層且隨後平坦 化該金屬氧化物層來形成元件14。金屬氧化物層可在不存 在形成於金屬層上方之二極體22之情況下凹陷低於軌之上 部表面》可用一絕緣填料材料44(例如氧化矽)填充軌13之 間的間隔,後跟CMP或其他平坦化。同樣地,亦可用平坦 化填料材料48填充二極體22之間的間隔。 在圖7中所示之另一替代實施例中,可藉由在底部電極 28上方形成至少一個二極體22來形成記憶體裝置。隨後, 障壁層16及絕緣結構13(例如一圓柱柱形結構13)形成於該 二極體上方。電阻率切換元件14係形成於結構13之側壁15 上0 可藉由在一絕緣模板層上方形成一硬遮罩圖案層來形成 結構13«該硬遮罩層可包括鎢或非晶碳或其他材料。可使 •12· 1380437 用該硬遮罩圖案作為一遮罩藉由任一適合方法(例如,各 向同性蝕刻)底切該硬遮罩圖案來選擇性地移除該模板 層。因此,該模板層之寬度減少,且自該模板層形成至少 個絕緣柱。此形成由一較大直徑之硬遮罩帽覆蓋之一絕 緣結構13柱莖之一「蘑菇」形狀。 然後,藉由任何適合方法(例如,(舉例而言)原子層沈 積)在絕緣結構13柱之一側壁上方且在該硬遮罩帽上沈積 電阻率切換材料(例如,一金屬氧化物層)。可使用硬遮罩 囷案作為一遮罩來選擇性地蝕刻一個或多個半導體二極體 層(及(視情況)障壁層16)以形成至少一個柱形二極體引導 元件(及(視情況)一經圖案化障壁16)。可視情況在上部電 極26形成為與電阻率切換元件14接觸之前移除該硬遮罩圖 案層,或若該硬遮罩導電則可將該硬遮罩保留作為上部電 極26之一部分。因此,在此結構中,二極體具有與該硬遮 罩圖案直徑相同之直徑,而絕緣結構13由於各向同性蝕刻 及底切而具有比該二極體小之一直徑(或寬度)。此允許電 阻率切換元件14之邊緣直接或間接電接觸結構13下面之二 極體22且直接或間接電接觸位於結構13上面之上部電極 26 〇 本發明實施例之記憶體單元可包括:一單次可程式化 (OTP)或可重寫非揮發性記憶體單元且可選自以下内容中 之至少一者:反熔絲、熔絲、二極體及串聯配置之反熔 絲、多晶石夕記憶體效應單元、金屬氧化物記憶體、可切換 複合金屬氧化物、碳奈米管記憶體、石墨烯或其他碳可切 -13· 1380437 換電阻材料、相變材料記憶體、導電橋元件或可切換聚合 物記憶體》 w 上文已闡述一第一記憶體層階之形成。可在此第一記憶 體層階上面形成額外記憶體層階以形成一單體三維記憶體 陣列。在某些實施例中,可在若干記憶體層階之間共享導 體,亦即,頂部導體將充當下一記憶體層階之底部導體。 在其他實施例中,在第一記憶體層階上面形成一層階間電 "質(未顯示)’其表面經平坦化,且一第二記憶體層階之 構造在此經平坦化之層階間電介質上開始,因此無共享導 體。 ' 一單體三維記憶體陣列係一種其中多個記憶體層階形成 於一單個基板(諸如一晶圓)上面而無中間基板之記憶體陣 列。形成一個記憶體層階之層直接沈積或生長於一現有層 階或若干層階之層上方。相比之下,如在Leedyi美國專 利第 5,915,167號「Three dimensional structure memory」 令’藉由在單獨基板上形成記憶體層階並使該等記憶體層 階於彼此頂上黏合在-起而構造堆疊記憶體。可在結合之 前使該等基板變薄或自記憶體層階移除,但由於該等記憶 體層階最初形成於單獨基板上方,因此此等記憶體並非係 真正的單體三維記憶體陣列。 一形成於一基板上面之單體三維記憶體陣列至少包括形 成於該基板上面一第一高度處之一第一記憶體層階及在一 不同於該第一高度之第二高度處形成之一第二記憶醴層 階。可以此一多層階陣列在基板上面形成三個、四個、八 1380437 個或實際上任一數目之記憶體層階。 在此闡述之通篇中,已將一個層闡述為在另一個層「上 面」或「下面」》應理解,此等術語闡述層及元件相對於 該等層及元件形成於其上之基板(在大多數實施例中係一 單晶石夕晶圓基板)之位置;當其較遠離該晶圓基板時一個 特徵在另一待徵上面’且當其較接近時一個特徵在另一特 徵下面。雖然清楚晶圓或晶粒可在任一方向上旋轉,但該 晶圓或晶粒上第一特徵之相關定向將不改變。另外,該等 圖式有意未按比例顯示且僅表示層及所處理之層。 已以一圖解闡釋之方式闡述本發明。應理解,已使用之 術語意欲具有闡述性而非限制性詞語之性質。根據上文之 教示内容可能對本發明做出諸多修改及變化。因此,在隨 附申請專利範圍之範疇内’亦 >了不同於所具體闡述之方式 實踐本發明。 【圖式簡單說明】 • 圖1Α圖解闞釋一先前技術 〇愿體皁兀之一三飨葙圄。圖 1B及1 c分別顯示先前技術單 側視圖及俯視圖; 凡之電阻率切換儲存元件之 元之側 ㈣及聊別顯示根據本” 視圖及俯視圓;及 見他例之一 圖3、4、5、6Α及7圖解閣釋 元之一俯視圖 單元之側剖視圖。圖6Β係圖6α之單發明實施例之記憶體 【主要元件符號說明】 13 絕緣結構 •15· 1380437 14 15 16 18 20 22 24 25 26 28 30 32 34 42 44 46 48 電阻率切換元件 側壁 障壁(層) 作用切換區域 先前技術記憶體單元 二極體 儲存元件 導電細絲 電極 電極 經重摻雜半導體區域 中間區域 經重摻雜半導體區域 上部部分/孔或渠溝 絕緣填料材料 上部障壁 平坦化填充材料
Claims (1)
1380437
七、申請專利範圍: u 一種記憶體裝置,其包括: 一第一導電電極; 一絕緣結構; 一第二導電電極’其位於該電阻率切換元件上方;及 引導兀件’其係與該電阻率切換元件串聯地位於該 第一導電電極與該第二導電電極之間; 其中該電阻率切換元件在自該第一導電電極至該第二 導電電極之一第一方向上之一高度大於該電阻率切換元 件在垂直料第-方向之__第二方向上之一厚度; 其中該絕緣結構包含複數個絕緣執,且該電阻率切換 凡件係位於至少-絕緣軌之側壁上,並與暴露於蛾鄰軌 之間的該第一導電電極接觸;且 其中位於該複數個絕緣軌之間的一間隔係填充一絕緣 :料材料,且各絕緣軌皆與該第一導電電極及該引導元 件部份錯位’俾使該電阻率切換元件係與該第 極及該引導元件相接觸地定位。 2. 3. =求Γ之裝置,其中該引導元件包括位於該電阻率 刀換7G件上面之一個二極體。 如凊求項1之裝置,其中該引導元 切換元件下面之一個二極體。匕括位於該電阻率 Π求項1之裝置,其中該引導元件包括藉由-導電障 壁層而與該電阻率切換元件相分離之一柱形P心二Z 4. 1380437 體 5·如請求们之裝置,其中該電阻率切換元件係位於該絕 緣結構一側壁上之一金屬氧化物層。 6· 如請求们之裝置,其中該電阻率切換元件係選自:一 反:絲電介質、一炫絲…多晶石夕記憶體效應材料、一 ^氧^物或可切換複合金屬氧化物材料 '—碳奈米管 -相變材:㈣I切換電阻材料、碳電阻率切換材料、 相變材料、一導電橋元件、 切換聚合物材料。 _貞刀換材枓或一可 7.如請求項1之裝置,其中: c緣結構包括一絕緣層中之—渠溝] I電阻率切換元件位於該絕 上且與曝露於該絕緣層中之該準之該渠溝之該側壁 導電電極接觸。 〃溝之一底部上之該第一 :Μ求項1之裝置,其中該電阻 奈米之高度及-小於1〇奈米之厚度。刀換兀件具有大㈣
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CN101999170B (zh) | 2013-01-16 |
KR101532203B1 (ko) | 2015-07-06 |
JP5044042B2 (ja) | 2012-10-10 |
JP2012212902A (ja) | 2012-11-01 |
JP5395213B2 (ja) | 2014-01-22 |
CN102983273A (zh) | 2013-03-20 |
CN101999170A (zh) | 2011-03-30 |
JP2011517855A (ja) | 2011-06-16 |
TW200950078A (en) | 2009-12-01 |
EP2277201A1 (en) | 2011-01-26 |
US7812335B2 (en) | 2010-10-12 |
US20090256129A1 (en) | 2009-10-15 |
KR20110005830A (ko) | 2011-01-19 |
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