JP5395213B2 - 側壁構造化スイッチャブル抵抗器セル - Google Patents
側壁構造化スイッチャブル抵抗器セル Download PDFInfo
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- JP5395213B2 JP5395213B2 JP2012130412A JP2012130412A JP5395213B2 JP 5395213 B2 JP5395213 B2 JP 5395213B2 JP 2012130412 A JP2012130412 A JP 2012130412A JP 2012130412 A JP2012130412 A JP 2012130412A JP 5395213 B2 JP5395213 B2 JP 5395213B2
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- 229910044991 metal oxide Inorganic materials 0.000 claims description 24
- 150000004706 metal oxides Chemical class 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000000231 atomic layer deposition Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 description 28
- 239000004065 semiconductor Substances 0.000 description 18
- 239000000758 substrate Substances 0.000 description 13
- 230000004888 barrier function Effects 0.000 description 10
- 239000004020 conductor Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000012782 phase change material Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910021341 titanium silicide Inorganic materials 0.000 description 2
- 235000001674 Agaricus brunnescens Nutrition 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000008450 motivation Effects 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- -1 perovskite oxide) Chemical class 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
- H10B63/22—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the metal-insulator-metal type
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/023—Formation of switching materials, e.g. deposition of layers by chemical vapor deposition, e.g. MOCVD, ALD
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/068—Shaping switching materials by processes specially adapted for achieving sub-lithographic dimensions, e.g. using spacers
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
- H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
- H10N70/8265—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices on sidewalls of dielectric structures, e.g. mesa-shaped or cup-shaped devices
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
- H10N70/8845—Carbon or carbides
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- Semiconductor Memories (AREA)
Description
本願は、2008年4月11日に出願された米国仮特許出願第61/071,093号(特許文献1)および2008年6月30日に出願された米国特許出願第12/216,110号(特許文献2)の利益を主張し、その両方の全体が本願明細書において参照により援用されている。
R=ρ*t/(L*W) [1]
により計算することができ、ここでρは材料の抵抗率であり、tは層の高さであり、(L*W)は伝導性経路の面積である。その結果として、層の抵抗はジオメトリに大きく依存することがある。図1B、1C、2Aおよび2Bは、抵抗のそのような依存性を示す。図1Bおよび1Cは、ダイオード(これは、明瞭性を目的として図1Bおよび1Cから省略されているけれども素子24より上または下に置かれることができる)の頂部に置かれた抵抗率スイッチング素子24を示す。素子24の低抵抗率状態へのスイッチングの間に形成される伝導性フィラメント25のL*W面積はセルの構造によって限定されないので、伝導性フィラメントの抵抗は割合に低い抵抗であり得る。代表的な金属酸化物スイッチャブル抵抗材料は1KΩから10KΩまでの範囲内の抵抗を有するフィラメントを形成することができ、3次元ダイオードアレイに用いられるべく形成されるダイオードにより通常達成される抵抗より低い抵抗である。3次元ダイオードアレイ内のダイオードは、比較的に低い抵抗のフィラメントを確実にリセットすることはできないかもしれない。
R=ρ*T/(l*W) [2]
によって計算し、ここでlは絶縁構造の側壁上の素子14の堆積された厚さである。長さlは図1Bおよび1Cの長さLより著しく小さいことがある。抵抗は、図2Aおよび2Bの構成では図1Bおよび1Cのものと比べて(L/l)の率で増大する。高さTは、絶縁構造13の側壁を覆う抵抗率スイッチング素子14の高さである。高さTは、図1Bおよび1Cの、前の平面厚さtと同じであることがあり、場合によっては平面厚さtより大きいことがある。
Claims (3)
- メモリデバイスを作る方法であって、
第1の伝導性電極を形成するステップと、
前記第1の伝導性電極の上に少なくとも1つのダイオード層を形成するステップと、
前記ダイオード層の上に少なくとも1つの絶縁テンプレート層を形成するステップと、
前記絶縁テンプレート層の上にハードマスクパターンを形成するステップと、
前記ハードマスクパターンをマスクとして用いて前記絶縁テンプレート層をエッチングするステップと、
絶縁柱を含む絶縁構造を形成するために前記絶縁テンプレート層の幅を減少させるステップと、
抵抗率スイッチング素子を形成するために前記絶縁柱の側壁の上に金属酸化物抵抗率スイッチング層を堆積させるステップと、
ダイオードステアリング素子を含む柱状ダイオードを形成するために前記ハードマスクパターンをマスクとして用いて前記ダイオード層をエッチングするステップと、
前記金属酸化物抵抗率スイッチング層と接触する第2の伝導性電極を形成するステップと、
を含む方法。 - 請求項1記載の方法において、
前記幅を減少させるステップは、前記ハードマスクパターンをアンダーカットするために前記絶縁テンプレート層の等方性エッチングによって実行され、
前記金属酸化物抵抗率スイッチング層を堆積させるステップは、原子層堆積法によって実行される方法。 - 請求項2記載の方法において、
前記第2の伝導性電極を形成するステップの前に、前記金属酸化物抵抗率スイッチング層と接触している前記ハードマスクパターンを除去するステップをさらに含む方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US7109308P | 2008-04-11 | 2008-04-11 | |
US61/071,093 | 2008-04-11 | ||
US12/216,110 | 2008-06-30 | ||
US12/216,110 US7812335B2 (en) | 2008-04-11 | 2008-06-30 | Sidewall structured switchable resistor cell |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2011504064A Division JP5044042B2 (ja) | 2008-04-11 | 2009-04-01 | 側壁構造化スイッチャブル抵抗器セル |
Publications (2)
Publication Number | Publication Date |
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JP2012212902A JP2012212902A (ja) | 2012-11-01 |
JP5395213B2 true JP5395213B2 (ja) | 2014-01-22 |
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JP2011504064A Expired - Fee Related JP5044042B2 (ja) | 2008-04-11 | 2009-04-01 | 側壁構造化スイッチャブル抵抗器セル |
JP2012130412A Expired - Fee Related JP5395213B2 (ja) | 2008-04-11 | 2012-06-08 | 側壁構造化スイッチャブル抵抗器セル |
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JP2011504064A Expired - Fee Related JP5044042B2 (ja) | 2008-04-11 | 2009-04-01 | 側壁構造化スイッチャブル抵抗器セル |
Country Status (7)
Country | Link |
---|---|
US (1) | US7812335B2 (ja) |
EP (1) | EP2277201A1 (ja) |
JP (2) | JP5044042B2 (ja) |
KR (1) | KR101532203B1 (ja) |
CN (2) | CN102983273A (ja) |
TW (1) | TWI380437B (ja) |
WO (1) | WO2009126492A1 (ja) |
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US7830698B2 (en) * | 2008-04-11 | 2010-11-09 | Sandisk 3D Llc | Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same |
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WO2010078467A1 (en) * | 2008-12-31 | 2010-07-08 | Sandisk 3D, Llc | Modulation of resistivity in carbon-based read-writeable materials |
EP2478572A4 (en) * | 2009-09-18 | 2013-11-13 | Hewlett Packard Development Co | LUMINAIRE DIODE WITH METAL DIELECTRIC METAL AFUBAU |
JP5439147B2 (ja) * | 2009-12-04 | 2014-03-12 | 株式会社東芝 | 抵抗変化メモリ |
US8374018B2 (en) * | 2010-07-09 | 2013-02-12 | Crossbar, Inc. | Resistive memory using SiGe material |
CN102332454B (zh) * | 2010-07-15 | 2013-04-10 | 复旦大学 | 一次可编程存储单元、存储器及其制备方法 |
JP5572056B2 (ja) * | 2010-10-20 | 2014-08-13 | 株式会社東芝 | 記憶装置及びその製造方法 |
US8502185B2 (en) * | 2011-05-31 | 2013-08-06 | Crossbar, Inc. | Switching device having a non-linear element |
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US8879299B2 (en) | 2011-10-17 | 2014-11-04 | Sandisk 3D Llc | Non-volatile memory cell containing an in-cell resistor |
KR20130043533A (ko) * | 2011-10-20 | 2013-04-30 | 삼성전자주식회사 | 도전성 버퍼 패턴을 갖는 비-휘발성 메모리소자 및 그 형성 방법 |
US8710481B2 (en) | 2012-01-23 | 2014-04-29 | Sandisk 3D Llc | Non-volatile memory cell containing a nano-rail electrode |
KR20130087233A (ko) | 2012-01-27 | 2013-08-06 | 삼성전자주식회사 | 가변 저항 메모리 장치 및 그 형성 방법 |
CN104011863A (zh) | 2012-02-29 | 2014-08-27 | 惠普发展公司,有限责任合伙企业 | 具有与容纳区处于热平衡的沟道区的忆阻器 |
US8658476B1 (en) | 2012-04-20 | 2014-02-25 | Crossbar, Inc. | Low temperature P+ polycrystalline silicon material for non-volatile memory device |
WO2014050198A1 (ja) * | 2012-09-28 | 2014-04-03 | 日本電気株式会社 | スイッチング素子およびスイッチング素子の製造方法 |
CN104051619B (zh) * | 2013-03-13 | 2017-07-04 | 旺宏电子股份有限公司 | 具有相变元件的存储器单元及其形成方法 |
US9093635B2 (en) * | 2013-03-14 | 2015-07-28 | Crossbar, Inc. | Controlling on-state current for two-terminal memory |
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CN101999170B (zh) | 2013-01-16 |
JP2011517855A (ja) | 2011-06-16 |
WO2009126492A1 (en) | 2009-10-15 |
US7812335B2 (en) | 2010-10-12 |
EP2277201A1 (en) | 2011-01-26 |
CN102983273A (zh) | 2013-03-20 |
KR20110005830A (ko) | 2011-01-19 |
US20090256129A1 (en) | 2009-10-15 |
JP5044042B2 (ja) | 2012-10-10 |
JP2012212902A (ja) | 2012-11-01 |
KR101532203B1 (ko) | 2015-07-06 |
TW200950078A (en) | 2009-12-01 |
TWI380437B (en) | 2012-12-21 |
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