JP2011501725A5 - - Google Patents

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JP2011501725A5
JP2011501725A5 JP2010524817A JP2010524817A JP2011501725A5 JP 2011501725 A5 JP2011501725 A5 JP 2011501725A5 JP 2010524817 A JP2010524817 A JP 2010524817A JP 2010524817 A JP2010524817 A JP 2010524817A JP 2011501725 A5 JP2011501725 A5 JP 2011501725A5
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Japan
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conductive
nanostructure
bonding film
nanostructures
substrate
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JP2010524817A
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JP5535915B2 (ja
JP2011501725A (ja
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Priority claimed from PCT/SE2008/000506 external-priority patent/WO2009035393A1/en
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JP2010524817A 2007-09-12 2008-09-10 ナノ構造体による隣接層の接続および接合 Expired - Fee Related JP5535915B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US97185907P 2007-09-12 2007-09-12
US60/971,859 2007-09-12
US97404507P 2007-09-20 2007-09-20
US60/974,045 2007-09-20
PCT/SE2008/000506 WO2009035393A1 (en) 2007-09-12 2008-09-10 Connecting and bonding adjacent layers with nanostructures

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JP2014090161A Division JP2014177398A (ja) 2007-09-12 2014-04-24 ナノ構造体による隣接層の接続および接合

Publications (3)

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JP2011501725A JP2011501725A (ja) 2011-01-13
JP2011501725A5 true JP2011501725A5 (enExample) 2012-10-25
JP5535915B2 JP5535915B2 (ja) 2014-07-02

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JP2010524817A Expired - Fee Related JP5535915B2 (ja) 2007-09-12 2008-09-10 ナノ構造体による隣接層の接続および接合
JP2014090161A Pending JP2014177398A (ja) 2007-09-12 2014-04-24 ナノ構造体による隣接層の接続および接合
JP2015167487A Expired - Fee Related JP6149077B2 (ja) 2007-09-12 2015-08-27 ナノ構造体による隣接層の接続および接合
JP2017099678A Pending JP2017199911A (ja) 2007-09-12 2017-05-19 ナノ構造体による隣接層の接続および接合

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JP2014090161A Pending JP2014177398A (ja) 2007-09-12 2014-04-24 ナノ構造体による隣接層の接続および接合
JP2015167487A Expired - Fee Related JP6149077B2 (ja) 2007-09-12 2015-08-27 ナノ構造体による隣接層の接続および接合
JP2017099678A Pending JP2017199911A (ja) 2007-09-12 2017-05-19 ナノ構造体による隣接層の接続および接合

Country Status (8)

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US (4) US8106517B2 (enExample)
EP (1) EP2197782B1 (enExample)
JP (4) JP5535915B2 (enExample)
KR (1) KR101487346B1 (enExample)
CN (2) CN101827782B (enExample)
RU (1) RU2010114227A (enExample)
TW (3) TWI655695B (enExample)
WO (1) WO2009035393A1 (enExample)

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KR100745734B1 (ko) * 2005-12-13 2007-08-02 삼성에스디아이 주식회사 탄소나노튜브의 형성방법 및 이를 이용한 전계방출소자의제조방법
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JP4870048B2 (ja) * 2007-08-20 2012-02-08 富士通株式会社 電子部品装置及びその製造方法
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EP2250661B1 (en) 2008-02-25 2020-04-08 Smoltek AB Deposition and selective removal of conducting helplayer for nanostructure processing

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