JP2011256100A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2011256100A5 JP2011256100A5 JP2011121274A JP2011121274A JP2011256100A5 JP 2011256100 A5 JP2011256100 A5 JP 2011256100A5 JP 2011121274 A JP2011121274 A JP 2011121274A JP 2011121274 A JP2011121274 A JP 2011121274A JP 2011256100 A5 JP2011256100 A5 JP 2011256100A5
- Authority
- JP
- Japan
- Prior art keywords
- inert gas
- flow rate
- substrate
- argon
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 22
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 16
- 239000011261 inert gas Substances 0.000 claims 13
- 239000000758 substrate Substances 0.000 claims 9
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 claims 7
- 229910052786 argon Inorganic materials 0.000 claims 7
- 238000005530 etching Methods 0.000 claims 6
- 239000007789 gas Substances 0.000 claims 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 5
- 229910052710 silicon Inorganic materials 0.000 claims 5
- 239000010703 silicon Substances 0.000 claims 5
- 238000000859 sublimation Methods 0.000 claims 5
- 230000008022 sublimation Effects 0.000 claims 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 3
- 238000000407 epitaxy Methods 0.000 claims 3
- 239000001294 propane Substances 0.000 claims 3
- 229910000077 silane Inorganic materials 0.000 claims 3
- 229910021389 graphene Inorganic materials 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 230000003247 decreasing effect Effects 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 229930195733 hydrocarbon Natural products 0.000 claims 1
- 150000002430 hydrocarbons Chemical class 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PLP-391416 | 2010-06-07 | ||
| PL391416A PL213291B1 (pl) | 2010-06-07 | 2010-06-07 | Sposób wytwarzania grafenu |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011256100A JP2011256100A (ja) | 2011-12-22 |
| JP2011256100A5 true JP2011256100A5 (enExample) | 2012-09-20 |
| JP5662249B2 JP5662249B2 (ja) | 2015-01-28 |
Family
ID=44759809
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011121274A Expired - Fee Related JP5662249B2 (ja) | 2010-06-07 | 2011-05-31 | グラフェンの製造方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9067796B2 (enExample) |
| EP (1) | EP2392547B1 (enExample) |
| JP (1) | JP5662249B2 (enExample) |
| KR (1) | KR101465452B1 (enExample) |
| CN (1) | CN102933491B (enExample) |
| DK (1) | DK2392547T3 (enExample) |
| PL (1) | PL213291B1 (enExample) |
| WO (1) | WO2011155858A2 (enExample) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8940576B1 (en) * | 2011-09-22 | 2015-01-27 | Hrl Laboratories, Llc | Methods for n-type doping of graphene, and n-type-doped graphene compositions |
| CN102583329B (zh) * | 2012-01-03 | 2013-08-14 | 西安电子科技大学 | 基于Cu膜辅助退火和Cl2反应的大面积石墨烯制备方法 |
| JP5885198B2 (ja) * | 2012-02-28 | 2016-03-15 | 国立大学法人九州大学 | グラフェン薄膜の製造方法及びグラフェン薄膜 |
| CN103367121B (zh) * | 2012-03-28 | 2016-04-13 | 清华大学 | 外延结构体的制备方法 |
| EP2836460B1 (en) * | 2012-04-09 | 2022-08-31 | Ohio University | Method of producing graphene |
| CN103378223B (zh) * | 2012-04-25 | 2016-07-06 | 清华大学 | 外延结构体的制备方法 |
| PL224447B1 (pl) | 2012-08-25 | 2016-12-30 | Advanced Graphene Products Spółka Z Ograniczoną Odpowiedzialnością | Sposób oddzielania grafenu od ciekłej matrycy formującej |
| US9059013B2 (en) * | 2013-03-21 | 2015-06-16 | International Business Machines Corporation | Self-formation of high-density arrays of nanostructures |
| US20150005887A1 (en) * | 2013-06-30 | 2015-01-01 | International Business Machines Corporation | Intrinsically lubricated joint replacement materials, structure, and process |
| JP2015040156A (ja) * | 2013-08-23 | 2015-03-02 | 日本電信電話株式会社 | グラフェン形成方法および形成装置 |
| JP6002106B2 (ja) * | 2013-09-30 | 2016-10-05 | 日本電信電話株式会社 | 炭化ケイ素光導波路素子 |
| JP5960666B2 (ja) * | 2013-09-30 | 2016-08-02 | 日本電信電話株式会社 | 炭化ケイ素導波路素子 |
| ES2589793T3 (es) | 2013-10-28 | 2016-11-16 | Advanced Graphene Products Sp. Z O. O. | Procedimiento de producción de grafeno sobre un metal líquido |
| US9284640B2 (en) | 2013-11-01 | 2016-03-15 | Advanced Graphene Products Sp. Z.O.O. | Method of producing graphene from liquid metal |
| CN104805505A (zh) * | 2014-01-24 | 2015-07-29 | 泉州市博泰半导体科技有限公司 | 一种制备目标薄膜层的方法 |
| CN103864064A (zh) * | 2014-03-06 | 2014-06-18 | 新疆大学 | 一种制备氮掺杂石墨烯的方法 |
| US10562278B2 (en) * | 2014-05-30 | 2020-02-18 | University Of Massachusetts | Multilayer graphene structures with enhanced mechanical properties resulting from deterministic control of interlayer twist angles and chemical functionalization |
| CN104404620B (zh) * | 2014-12-01 | 2017-05-17 | 山东大学 | 一种在大直径6H/4H‑SiC硅面和碳面双面同时生长石墨烯的方法 |
| CN104477899B (zh) * | 2014-12-12 | 2016-05-25 | 重庆墨希科技有限公司 | 一种制备石墨烯的夹具以及制备石墨烯的方法 |
| CN105984865A (zh) * | 2015-02-11 | 2016-10-05 | 中国科学院物理研究所 | 用于热解碳化硅片生长石墨烯的坩埚 |
| CN104726845B (zh) * | 2015-03-05 | 2018-05-01 | 中国科学院上海微系统与信息技术研究所 | h-BN上石墨烯纳米带的制备方法 |
| EP3070754A1 (en) | 2015-03-17 | 2016-09-21 | Instytut Technologii Materialów Elektronicznych | A Hall effect element |
| EP3106432B1 (de) * | 2015-06-18 | 2017-07-19 | Bundesrepublik Deutschland, vertreten durch das Bundesmisterium für Wirtschaft und Energie, endvertreten durch den Präsidenten der PTB | Verfahren zum herstellen von graphen |
| US10850496B2 (en) | 2016-02-09 | 2020-12-01 | Global Graphene Group, Inc. | Chemical-free production of graphene-reinforced inorganic matrix composites |
| EP3222580A1 (en) | 2016-03-21 | 2017-09-27 | Instytut Technologii Materialów Elektronicznych | Method for passivating graphene |
| JP6720067B2 (ja) * | 2016-04-19 | 2020-07-08 | 住友電気工業株式会社 | グラフェントランジスタおよびその製造方法 |
| CN107845567A (zh) * | 2017-09-25 | 2018-03-27 | 重庆文理学院 | 石墨烯双异质结及其制备方法 |
| CN107500277B (zh) * | 2017-09-27 | 2019-12-24 | 中国科学院上海微系统与信息技术研究所 | 石墨烯边界调控方法 |
| US11629420B2 (en) | 2018-03-26 | 2023-04-18 | Global Graphene Group, Inc. | Production process for metal matrix nanocomposite containing oriented graphene sheets |
| CN109437148B (zh) * | 2018-11-02 | 2020-10-02 | 山东天岳先进材料科技有限公司 | 由碳化硅长晶剩料制备高纯碳材料的方法 |
| CN109852944B (zh) * | 2019-01-25 | 2020-08-04 | 中国科学院半导体研究所 | 基于微波等离子体化学气相沉积的石墨烯制备方法 |
| CN110184585B (zh) * | 2019-06-25 | 2023-04-18 | 福建闽烯科技有限公司 | 一种石墨烯铜粉的制备方法及装置 |
| WO2021156196A1 (en) * | 2020-02-03 | 2021-08-12 | Cealtech As | Process and device for large-scale production of graphene |
| CN112978718B (zh) * | 2021-03-12 | 2022-04-12 | 上海瑟赫新材料科技有限公司 | 一种石墨烯制备用反应炉 |
| KR102675622B1 (ko) * | 2021-12-30 | 2024-06-17 | 한국세라믹기술원 | 입실론 갈륨 옥사이드 에피택셜 기판 제조 방법 및 그에 의해 제조된 입실론 갈륨 옥사이드 에피택셜 기판 |
| US12385129B2 (en) | 2022-06-22 | 2025-08-12 | Richard Tracy McDaniel | Graphene vapor deposition system and process |
| CN117303355A (zh) * | 2023-10-16 | 2023-12-29 | 浙江大学杭州国际科创中心 | 一种利用循环加热制备石墨烯的方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005019104A2 (en) * | 2003-08-18 | 2005-03-03 | President And Fellows Of Harvard College | Controlled nanotube fabrication and uses |
| US7230274B2 (en) * | 2004-03-01 | 2007-06-12 | Cree, Inc | Reduction of carrot defects in silicon carbide epitaxy |
| DE102005045339B4 (de) * | 2005-09-22 | 2009-04-02 | Siltronic Ag | Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben |
| US7619257B2 (en) * | 2006-02-16 | 2009-11-17 | Alcatel-Lucent Usa Inc. | Devices including graphene layers epitaxially grown on single crystal substrates |
| JP4804272B2 (ja) * | 2006-08-26 | 2011-11-02 | 正義 梅野 | 単結晶グラファイト膜の製造方法 |
| WO2009054461A1 (ja) * | 2007-10-23 | 2009-04-30 | Sumitomo Electric Industries, Ltd. | 放熱構造及びその製造方法、ヒートシンク及び放熱装置、加熱装置及びサセプタ、セラミックフィルタ及びその製造方法、並びに排ガス浄化用セラミックフィルタ及びディーゼルパティキュレートフィルタ |
| JP5578639B2 (ja) * | 2008-08-04 | 2014-08-27 | 住友電気工業株式会社 | グラファイト膜製造方法 |
| KR101245001B1 (ko) * | 2008-08-28 | 2013-03-18 | 고쿠리츠 다이가쿠 호우징 나고야 다이가쿠 | 그래핀/ＳｉＣ 복합 재료의 제조 방법 및 그것에 의해 얻어지는 그래핀/ＳｉＣ 복합 재료 |
| US20100255984A1 (en) * | 2009-04-03 | 2010-10-07 | Brookhaven Science Associates, Llc | Monolayer and/or Few-Layer Graphene On Metal or Metal-Coated Substrates |
| CN101602503B (zh) * | 2009-07-20 | 2011-04-27 | 西安电子科技大学 | 4H-SiC硅面外延生长石墨烯的方法 |
| US8709881B2 (en) * | 2010-04-30 | 2014-04-29 | The Regents Of The University Of California | Direct chemical vapor deposition of graphene on dielectric surfaces |
| US9150417B2 (en) * | 2010-09-16 | 2015-10-06 | Graphensic Ab | Process for growth of graphene |
-
2010
- 2010-06-07 PL PL391416A patent/PL213291B1/pl unknown
-
2011
- 2011-05-31 JP JP2011121274A patent/JP5662249B2/ja not_active Expired - Fee Related
- 2011-06-06 DK DK11168749.7T patent/DK2392547T3/en active
- 2011-06-06 KR KR20127031787A patent/KR101465452B1/ko active Active
- 2011-06-06 WO PCT/PL2011/050023 patent/WO2011155858A2/en not_active Ceased
- 2011-06-06 EP EP11168749.7A patent/EP2392547B1/en active Active
- 2011-06-06 CN CN201180027996.XA patent/CN102933491B/zh not_active Expired - Fee Related
- 2011-06-07 US US13/154,920 patent/US9067796B2/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2011256100A5 (enExample) | ||
| DK2392547T3 (en) | Process for producing graphene | |
| US9048092B2 (en) | Process for preparing graphene based on metal film-assisted annealing and the reaction with Cl2 | |
| WO2013036376A3 (en) | Methods for the epitaxial growth of silicon carbide | |
| JP2016507467A5 (enExample) | ||
| JP2011121847A5 (enExample) | ||
| JP2012051795A5 (enExample) | ||
| CN103352202B (zh) | 一种常压化学气相沉积大面积高质量双层石墨烯薄膜的可控制备方法 | |
| JP2011233932A5 (enExample) | ||
| JP2016171348A5 (ja) | 炭化珪素エピタキシャル基板の製造方法 | |
| JP2009269816A5 (enExample) | ||
| CN105441902A (zh) | 一种外延碳化硅-石墨烯复合薄膜的制备方法 | |
| KR102207923B1 (ko) | 다층 그래핀 구조체의 형성 방법 | |
| CN102304701A (zh) | 一种碳化硅薄膜的制备方法 | |
| JP2017019679A (ja) | 炭化珪素エピタキシャル基板 | |
| JP2014241387A (ja) | 基板、基板の製造方法、及び電子装置 | |
| CN102828240B (zh) | 一种制备GaN薄膜材料的方法 | |
| JP2008184361A (ja) | ３Ｃ−ＳｉＣ単結晶膜の形成方法 | |
| JP5891634B2 (ja) | 多結晶ダイヤモンドおよびその製造方法 | |
| CN113073389B (zh) | 一种｛03-38｝面碳化硅外延及其生长方法 | |
| JP6573514B2 (ja) | ＳｉＣ単結晶基板の前処理方法及びエピタキシャルＳｉＣウェハの製造方法 | |
| CN107275209A (zh) | 一种SiC超高压PiN二极管器件材料的制备方法 | |
| Ushio et al. | Surface phase diagram of 4H-SiC {0001} step-terrace structures during Si-vapor etching in a TaC crucible | |
| CN103540907B (zh) | Ni金属膜覆盖Si3N4衬底生长浓度可控石墨烯材料的方法 | |
| CN103255474A (zh) | 一种大尺寸单晶石墨烯的制备方法 |