JP2011233932A5 - - Google Patents

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JP2011233932A5
JP2011233932A5 JP2011173502A JP2011173502A JP2011233932A5 JP 2011233932 A5 JP2011233932 A5 JP 2011233932A5 JP 2011173502 A JP2011173502 A JP 2011173502A JP 2011173502 A JP2011173502 A JP 2011173502A JP 2011233932 A5 JP2011233932 A5 JP 2011233932A5
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Japan
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epitaxial layer
silicon carbide
carbide semiconductor
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manufacturing
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JP2011173502A
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Japanese (ja)
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JP5316612B2 (ja
JP2011233932A (ja
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JP2011173502A 2011-08-09 2011-08-09 炭化珪素半導体エピタキシャル基板の製造方法 Active JP5316612B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011173502A JP5316612B2 (ja) 2011-08-09 2011-08-09 炭化珪素半導体エピタキシャル基板の製造方法

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Application Number Priority Date Filing Date Title
JP2011173502A JP5316612B2 (ja) 2011-08-09 2011-08-09 炭化珪素半導体エピタキシャル基板の製造方法

Related Parent Applications (1)

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JP2006226368A Division JP4946264B2 (ja) 2006-08-23 2006-08-23 炭化珪素半導体エピタキシャル基板の製造方法

Publications (3)

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JP2011233932A JP2011233932A (ja) 2011-11-17
JP2011233932A5 true JP2011233932A5 (enExample) 2012-03-01
JP5316612B2 JP5316612B2 (ja) 2013-10-16

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JP2011173502A Active JP5316612B2 (ja) 2011-08-09 2011-08-09 炭化珪素半導体エピタキシャル基板の製造方法

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Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5189156B2 (ja) * 2010-11-29 2013-04-24 株式会社豊田中央研究所 ＳｉＣ単結晶の製造方法
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
KR102053077B1 (ko) * 2012-11-30 2020-01-08 엘지이노텍 주식회사 에피택셜 웨이퍼 및 그 제조 방법
KR102098209B1 (ko) * 2013-02-05 2020-04-08 엘지이노텍 주식회사 에피택셜 웨이퍼 및 그 제조 방법
KR102119755B1 (ko) * 2012-11-30 2020-06-08 엘지이노텍 주식회사 에피택셜 웨이퍼 및 그 제조 방법
US11309389B2 (en) 2012-11-30 2022-04-19 Lx Semicon Co., Ltd. Epitaxial wafer and switch element and light-emitting element using same
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US9017804B2 (en) 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
JP6624868B2 (ja) * 2015-09-29 2019-12-25 昭和電工株式会社 ｐ型低抵抗率炭化珪素単結晶基板
FR3108774B1 (fr) * 2020-03-27 2022-02-18 Soitec Silicon On Insulator Procede de fabrication d’une structure composite comprenant une couche mince en sic monocristallin sur un substrat support en sic

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3508519B2 (ja) * 1997-11-28 2004-03-22 松下電器産業株式会社 エピタキシャル成長装置およびエピタキシャル成長法
JP2003234301A (ja) * 2001-10-25 2003-08-22 Matsushita Electric Ind Co Ltd 半導体基板、半導体素子及びその製造方法

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