JP2009269816A5 - - Google Patents
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- Publication number
- JP2009269816A5 JP2009269816A5 JP2009169526A JP2009169526A JP2009269816A5 JP 2009269816 A5 JP2009269816 A5 JP 2009269816A5 JP 2009169526 A JP2009169526 A JP 2009169526A JP 2009169526 A JP2009169526 A JP 2009169526A JP 2009269816 A5 JP2009269816 A5 JP 2009269816A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- partial pressure
- growth
- less
- gallium nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 claims 9
- 229910002601 GaN Inorganic materials 0.000 claims 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 3
- 239000012159 carrier gas Substances 0.000 claims 3
- 239000000463 material Substances 0.000 claims 3
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 claims 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009169526A JP5105258B2 (ja) | 2006-03-13 | 2009-07-17 | 窒化ガリウム系材料及びその製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006067907 | 2006-03-13 | ||
| JP2006067907 | 2006-03-13 | ||
| JP2009169526A JP5105258B2 (ja) | 2006-03-13 | 2009-07-17 | 窒化ガリウム系材料及びその製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008065209A Division JP4395609B2 (ja) | 2006-03-13 | 2008-03-14 | 窒化ガリウム系材料からなる基板 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009269816A JP2009269816A (ja) | 2009-11-19 |
| JP2009269816A5 true JP2009269816A5 (enExample) | 2010-05-13 |
| JP5105258B2 JP5105258B2 (ja) | 2012-12-26 |
Family
ID=39723732
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008065209A Active JP4395609B2 (ja) | 2006-03-13 | 2008-03-14 | 窒化ガリウム系材料からなる基板 |
| JP2009169526A Active JP5105258B2 (ja) | 2006-03-13 | 2009-07-17 | 窒化ガリウム系材料及びその製造方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008065209A Active JP4395609B2 (ja) | 2006-03-13 | 2008-03-14 | 窒化ガリウム系材料からなる基板 |
Country Status (1)
| Country | Link |
|---|---|
| JP (2) | JP4395609B2 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2377974A4 (en) | 2009-01-08 | 2014-11-19 | Mitsubishi Chem Corp | METHOD FOR THE PRODUCTION OF A NITRIDE CRYSTAL, NITRIDE CRYSTAL AND DEVICE FOR ITS PRODUCTION |
| JP5665171B2 (ja) * | 2010-05-14 | 2015-02-04 | 住友電気工業株式会社 | Ｉｉｉ族窒化物半導体電子デバイス、ｉｉｉ族窒化物半導体電子デバイスを作製する方法 |
| JP2011256082A (ja) * | 2010-06-10 | 2011-12-22 | Sumitomo Electric Ind Ltd | ＧａＮ結晶自立基板およびその製造方法 |
| EP2770089B1 (en) * | 2011-10-21 | 2025-03-05 | Mitsubishi Chemical Corporation | Gallium NITRIDE SEMICONDUCTOR CRYSTAL |
| JP6064695B2 (ja) * | 2012-03-22 | 2017-01-25 | 三菱化学株式会社 | 窒化ガリウム結晶、及び窒化ガリウム結晶の製造方法 |
| EP2872668B1 (en) * | 2012-07-13 | 2018-09-19 | Gallium Enterprises Pty Ltd | Apparatus and method for film formation |
| JP6835019B2 (ja) * | 2018-03-14 | 2021-02-24 | 株式会社豊田中央研究所 | 半導体装置及びその製造方法 |
| CN112567078B (zh) * | 2018-08-17 | 2023-04-25 | 三菱化学株式会社 | n型GaN结晶、GaN晶片以及GaN结晶、GaN晶片和氮化物半导体器件的制造方法 |
| KR102826740B1 (ko) * | 2019-05-30 | 2025-06-27 | 미쯔비시 케미컬 주식회사 | GaN 기판 웨이퍼 및 그 제조 방법 |
| WO2020241761A1 (ja) | 2019-05-30 | 2020-12-03 | 三菱ケミカル株式会社 | ＧａＮ基板ウエハおよびその製造方法 |
| JP7738414B2 (ja) * | 2021-06-21 | 2025-09-12 | パナソニックホールディングス株式会社 | Ｉｉｉ族化合物半導体結晶の製造装置 |
| JP7215630B1 (ja) | 2022-08-22 | 2023-01-31 | 信越半導体株式会社 | 窒化物半導体基板及びその製造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2415707A (en) * | 2004-06-30 | 2006-01-04 | Arima Optoelectronic | Vertical hydride vapour phase epitaxy deposition using a homogenising diaphragm |
-
2008
- 2008-03-14 JP JP2008065209A patent/JP4395609B2/ja active Active
-
2009
- 2009-07-17 JP JP2009169526A patent/JP5105258B2/ja active Active
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