JP2009212531A5 - - Google Patents

Download PDF

Info

Publication number
JP2009212531A5
JP2009212531A5 JP2009144159A JP2009144159A JP2009212531A5 JP 2009212531 A5 JP2009212531 A5 JP 2009212531A5 JP 2009144159 A JP2009144159 A JP 2009144159A JP 2009144159 A JP2009144159 A JP 2009144159A JP 2009212531 A5 JP2009212531 A5 JP 2009212531A5
Authority
JP
Japan
Prior art keywords
wafer carrier
seal
vapor deposition
chemical vapor
flowing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009144159A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009212531A (ja
Filing date
Publication date
Priority claimed from US10/621,049 external-priority patent/US20050011459A1/en
Application filed filed Critical
Publication of JP2009212531A publication Critical patent/JP2009212531A/ja
Publication of JP2009212531A5 publication Critical patent/JP2009212531A5/ja
Pending legal-status Critical Current

Links

JP2009144159A 2003-07-15 2009-06-17 化学気相成長反応装置 Pending JP2009212531A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/621,049 US20050011459A1 (en) 2003-07-15 2003-07-15 Chemical vapor deposition reactor

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2006520200A Division JP2007531250A (ja) 2003-07-15 2004-06-29 化学気相成長反応装置

Publications (2)

Publication Number Publication Date
JP2009212531A JP2009212531A (ja) 2009-09-17
JP2009212531A5 true JP2009212531A5 (enExample) 2010-07-01

Family

ID=34062909

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2006520200A Pending JP2007531250A (ja) 2003-07-15 2004-06-29 化学気相成長反応装置
JP2009144159A Pending JP2009212531A (ja) 2003-07-15 2009-06-17 化学気相成長反応装置

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2006520200A Pending JP2007531250A (ja) 2003-07-15 2004-06-29 化学気相成長反応装置

Country Status (8)

Country Link
US (2) US20050011459A1 (enExample)
JP (2) JP2007531250A (enExample)
KR (1) KR100816969B1 (enExample)
CN (1) CN101036215A (enExample)
DE (1) DE112004001308T5 (enExample)
GB (1) GB2419896B (enExample)
TW (1) TWI276698B (enExample)
WO (1) WO2005010227A2 (enExample)

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7524532B2 (en) * 2002-04-22 2009-04-28 Aixtron Ag Process for depositing thin layers on a substrate in a process chamber of adjustable height
US20050178336A1 (en) * 2003-07-15 2005-08-18 Heng Liu Chemical vapor deposition reactor having multiple inlets
JP4790607B2 (ja) * 2004-04-27 2011-10-12 パナソニック株式会社 Ｉｉｉ族元素窒化物結晶製造装置およびｉｉｉ族元素窒化物結晶製造方法
CN100358098C (zh) * 2005-08-05 2007-12-26 中微半导体设备(上海)有限公司 半导体工艺件处理装置
KR100703214B1 (ko) * 2006-01-02 2007-04-09 삼성전기주식회사 유성형 화학 기상 증착 장치
CN101361164B (zh) * 2006-01-18 2011-04-20 Oc欧瑞康巴尔斯公司 用于盘状衬底除气的装置
CN101611472B (zh) * 2007-01-12 2015-03-25 威科仪器有限公司 气体处理系统
US20090096349A1 (en) * 2007-04-26 2009-04-16 Moshtagh Vahid S Cross flow cvd reactor
US8216419B2 (en) * 2008-03-28 2012-07-10 Bridgelux, Inc. Drilled CVD shower head
DE102007024798A1 (de) * 2007-05-25 2008-11-27 Aixtron Ag Vorrichtung zum Abscheiden von GaN mittels GaCI mit einem molybdänmaskierten Quarzteil, insbesondere Gaseinlassorgan
US20080308036A1 (en) * 2007-06-15 2008-12-18 Hideki Ito Vapor-phase growth apparatus and vapor-phase growth method
JP5038073B2 (ja) * 2007-09-11 2012-10-03 株式会社ニューフレアテクノロジー 半導体製造装置および半導体製造方法
US8668775B2 (en) * 2007-10-31 2014-03-11 Toshiba Techno Center Inc. Machine CVD shower head
KR20100114037A (ko) * 2007-12-20 2010-10-22 어플라이드 머티어리얼스, 인코포레이티드 향상된 가스 유동 분포를 가진 열 반응기
EP2281300A4 (en) * 2008-05-30 2013-07-17 Alta Devices Inc METHOD AND DEVICE FOR A CHEMICAL STEAM SEPARATION REACTOR
CN102203910B (zh) * 2008-11-07 2014-12-10 Asm美国公司 反应室
EP3471130A1 (en) * 2008-12-04 2019-04-17 Veeco Instruments Inc. Chemical vapor deposition flow inlet elements and methods
TWI398545B (zh) * 2010-04-29 2013-06-11 Chi Mei Lighting Tech Corp 有機金屬化學氣相沉積機台
US8562746B2 (en) * 2010-12-15 2013-10-22 Veeco Instruments Inc. Sectional wafer carrier
CN105755450B (zh) * 2010-12-30 2019-03-15 维易科仪器公司 使用承载器扩展的晶圆加工
US20130171350A1 (en) * 2011-12-29 2013-07-04 Intermolecular Inc. High Throughput Processing Using Metal Organic Chemical Vapor Deposition
KR20130111029A (ko) * 2012-03-30 2013-10-10 삼성전자주식회사 화학 기상 증착 장치용 서셉터 및 이를 구비하는 화학 기상 증착 장치
TWI506163B (zh) * 2012-07-13 2015-11-01 Epistar Corp 應用於氣相沉積的反應器及其承載裝置
JP5904101B2 (ja) * 2012-11-22 2016-04-13 豊田合成株式会社 化合物半導体の製造装置およびウェハ保持体
CN203890438U (zh) * 2013-06-08 2014-10-22 唐治 一种用于碳化硅外延生长的化学气相沉积装置
TWI502096B (zh) * 2013-06-17 2015-10-01 Ind Tech Res Inst 用於化學氣相沉積的反應裝置及反應製程
JP5971870B2 (ja) * 2013-11-29 2016-08-17 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び記録媒体
TWI650832B (zh) 2013-12-26 2019-02-11 維克儀器公司 用於化學氣相沉積系統之具有隔熱蓋的晶圓載具
US20150280051A1 (en) * 2014-04-01 2015-10-01 Tsmc Solar Ltd. Diffuser head apparatus and method of gas distribution
SG10201506020UA (en) * 2014-08-19 2016-03-30 Silcotek Corp Chemical vapor deposition system, arrangement of chemical vapor deposition systems, and chemical vapor deposition method
JP6578158B2 (ja) * 2015-08-28 2019-09-18 株式会社ニューフレアテクノロジー 気相成長装置及び気相成長方法
KR102381344B1 (ko) * 2015-09-18 2022-03-31 삼성전자주식회사 캠형 가스 혼합부 및 이것을 포함하는 반도체 소자 제조 장치들
US11832521B2 (en) 2017-10-16 2023-11-28 Akoustis, Inc. Methods of forming group III-nitride single crystal piezoelectric thin films using ordered deposition and stress neutral template layers
JP6786307B2 (ja) * 2016-08-29 2020-11-18 株式会社ニューフレアテクノロジー 気相成長方法
JP2018107156A (ja) * 2016-12-22 2018-07-05 株式会社ニューフレアテクノロジー 気相成長装置及び気相成長方法
US10559451B2 (en) * 2017-02-15 2020-02-11 Applied Materials, Inc. Apparatus with concentric pumping for multiple pressure regimes
USD860146S1 (en) 2017-11-30 2019-09-17 Veeco Instruments Inc. Wafer carrier with a 33-pocket configuration
USD866491S1 (en) 2018-03-26 2019-11-12 Veeco Instruments Inc. Chemical vapor deposition wafer carrier with thermal cover
USD860147S1 (en) 2018-03-26 2019-09-17 Veeco Instruments Inc. Chemical vapor deposition wafer carrier with thermal cover
USD858469S1 (en) 2018-03-26 2019-09-03 Veeco Instruments Inc. Chemical vapor deposition wafer carrier with thermal cover
USD854506S1 (en) 2018-03-26 2019-07-23 Veeco Instruments Inc. Chemical vapor deposition wafer carrier with thermal cover
USD863239S1 (en) 2018-03-26 2019-10-15 Veeco Instruments Inc. Chemical vapor deposition wafer carrier with thermal cover
CN109941963A (zh) * 2019-03-27 2019-06-28 常州大学 基于浮动催化法化学气相反应的微纳米结构直写装置
EP3760765B1 (en) 2019-07-03 2022-03-16 SiCrystal GmbH System for horizontal growth of high-quality semiconductor single crystals, and method of manufacturing same
CN112522684A (zh) * 2019-09-17 2021-03-19 夏泰鑫半导体(青岛)有限公司 前置样品室及晶片处理装置
DE102020101066A1 (de) * 2020-01-17 2021-07-22 Aixtron Se CVD-Reaktor mit doppelter Vorlaufzonenplatte
US11618968B2 (en) * 2020-02-07 2023-04-04 Akoustis, Inc. Apparatus including horizontal flow reactor with a central injector column having separate conduits for low-vapor pressure metalorganic precursors and other precursors for formation of piezoelectric layers on wafers
US12102010B2 (en) 2020-03-05 2024-09-24 Akoustis, Inc. Methods of forming films including scandium at low temperatures using chemical vapor deposition to provide piezoelectric resonator devices and/or high electron mobility transistor devices
CN111501020A (zh) * 2020-06-10 2020-08-07 北京北方华创微电子装备有限公司 半导体设备
TWI757781B (zh) * 2020-07-06 2022-03-11 大陸商蘇州雨竹機電有限公司 化學氣相沉積反應腔及其基板承載裝置
WO2022222000A1 (en) * 2021-04-19 2022-10-27 Innoscience (Suzhou) Technology Co., Ltd. Laminar flow mocvd apparatus for iii-nitride films
US12221695B2 (en) * 2021-05-18 2025-02-11 Mellanox Technologies, Ltd. CVD system with flange assembly for facilitating uniform and laminar flow
CN114768578B (zh) * 2022-05-20 2023-08-18 北京北方华创微电子装备有限公司 混气装置及半导体工艺设备
CN115537769B (zh) * 2022-12-01 2023-07-07 浙江晶越半导体有限公司 一种碳化硅化学气相沉积方法及反应器
CN116770264B (zh) * 2023-08-21 2023-11-14 合肥晶合集成电路股份有限公司 半导体器件的加工方法、装置、处理器和半导体加工设备
CN117438277B (zh) * 2023-12-19 2024-04-12 北京北方华创微电子装备有限公司 匀流组件、进气装置及半导体设备

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3757733A (en) * 1971-10-27 1973-09-11 Texas Instruments Inc Radial flow reactor
JPH0645886B2 (ja) * 1985-12-16 1994-06-15 キヤノン株式会社 堆積膜形成法
US4798166A (en) * 1985-12-20 1989-01-17 Canon Kabushiki Kaisha Apparatus for continuously preparing a light receiving element for use in photoelectromotive force member or image-reading photosensor
JPH0779088B2 (ja) * 1986-03-13 1995-08-23 古河電気工業株式会社 半導体薄膜気相成長装置
US4980204A (en) * 1987-11-27 1990-12-25 Fujitsu Limited Metal organic chemical vapor deposition method with controlled gas flow rate
FR2628984B1 (fr) * 1988-03-22 1990-12-28 Labo Electronique Physique Reacteur d'epitaxie a planetaire
US5458724A (en) * 1989-03-08 1995-10-17 Fsi International, Inc. Etch chamber with gas dispersing membrane
US5334277A (en) * 1990-10-25 1994-08-02 Nichia Kagaky Kogyo K.K. Method of vapor-growing semiconductor crystal and apparatus for vapor-growing the same
JP2745819B2 (ja) * 1990-12-10 1998-04-28 日立電線株式会社 気相膜成長装置
JPH0766919B2 (ja) * 1991-02-20 1995-07-19 株式会社半導体プロセス研究所 半導体製造装置
US6165311A (en) * 1991-06-27 2000-12-26 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna
US5453124A (en) * 1992-12-30 1995-09-26 Texas Instruments Incorporated Programmable multizone gas injector for single-wafer semiconductor processing equipment
JPH07111244A (ja) * 1993-10-13 1995-04-25 Mitsubishi Electric Corp 気相結晶成長装置
US5596606A (en) * 1994-04-05 1997-01-21 Scientific-Atlanta, Inc. Synchronous detector and methods for synchronous detection
JPH08181076A (ja) * 1994-10-26 1996-07-12 Fuji Xerox Co Ltd 薄膜形成方法および薄膜形成装置
JP3360098B2 (ja) * 1995-04-20 2002-12-24 東京エレクトロン株式会社 処理装置のシャワーヘッド構造
KR100190909B1 (ko) * 1995-07-01 1999-06-01 윤덕용 화학기상증착 반응기용 다구역 샤워헤드
US6093252A (en) * 1995-08-03 2000-07-25 Asm America, Inc. Process chamber with inner support
US6465043B1 (en) * 1996-02-09 2002-10-15 Applied Materials, Inc. Method and apparatus for reducing particle contamination in a substrate processing chamber
KR100493684B1 (ko) * 1996-06-28 2005-09-12 램 리서치 코포레이션 고밀도플라즈마화학기상증착장치및그방법
US5653808A (en) * 1996-08-07 1997-08-05 Macleish; Joseph H. Gas injection system for CVD reactors
JP3901252B2 (ja) * 1996-08-13 2007-04-04 キヤノンアネルバ株式会社 化学蒸着装置
US5963840A (en) * 1996-11-13 1999-10-05 Applied Materials, Inc. Methods for depositing premetal dielectric layer at sub-atmospheric and high temperature conditions
WO1998023788A1 (en) * 1996-11-27 1998-06-04 Emcore Corporation Chemical vapor deposition apparatus
JPH1167675A (ja) * 1997-08-21 1999-03-09 Toshiba Ceramics Co Ltd 高速回転気相薄膜形成装置及びそれを用いる高速回転気相薄膜形成方法
TW429271B (en) * 1997-10-10 2001-04-11 Applied Materials Inc Introducing process fluid over rotating substrates
WO1999036587A1 (en) * 1998-01-15 1999-07-22 Torrex Equipment Corporation Vertical plasma enhanced process apparatus and method
US6080241A (en) * 1998-09-02 2000-06-27 Emcore Corporation Chemical vapor deposition chamber having an adjustable flow flange
US6430202B1 (en) * 1999-04-09 2002-08-06 Xerox Corporation Structure and method for asymmetric waveguide nitride laser diode
US6812157B1 (en) * 1999-06-24 2004-11-02 Prasad Narhar Gadgil Apparatus for atomic layer chemical vapor deposition
KR100349625B1 (ko) * 1999-08-06 2002-08-22 한국과학기술원 저온증착법에 의한 에피택셜 코발트다이실리사이드 콘택 형성방법
US6511539B1 (en) * 1999-09-08 2003-01-28 Asm America, Inc. Apparatus and method for growth of a thin film
US6576062B2 (en) * 2000-01-06 2003-06-10 Tokyo Electron Limited Film forming apparatus and film forming method
US6821910B2 (en) * 2000-07-24 2004-11-23 University Of Maryland, College Park Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation
DE10043600B4 (de) * 2000-09-01 2013-12-05 Aixtron Se Vorrichtung zum Abscheiden insbesondere kristalliner Schichten auf einem oder mehreren, insbesondere ebenfalls kristallinen Substraten
US6980204B1 (en) * 2000-09-21 2005-12-27 Jeffrey Charles Hawkins Charging and communication cable system for a mobile computer apparatus
KR20020088091A (ko) * 2001-05-17 2002-11-27 (주)한백 화합물 반도체 제조용 수평 반응로
US6591850B2 (en) * 2001-06-29 2003-07-15 Applied Materials, Inc. Method and apparatus for fluid flow control
US6590344B2 (en) * 2001-11-20 2003-07-08 Taiwan Semiconductor Manufacturing Co., Ltd. Selectively controllable gas feed zones for a plasma reactor
EP1452626B9 (en) * 2001-12-03 2012-01-18 Ulvac, Inc. Mixer, and device and method for manufacturing thin film
JP4071968B2 (ja) * 2002-01-17 2008-04-02 東芝三菱電機産業システム株式会社 ガス供給システム及びガス供給方法
KR100498609B1 (ko) * 2002-05-18 2005-07-01 주식회사 하이닉스반도체 배치형 원자층 증착 장치
US6843882B2 (en) * 2002-07-15 2005-01-18 Applied Materials, Inc. Gas flow control in a wafer processing system having multiple chambers for performing same process
JP2004132307A (ja) * 2002-10-11 2004-04-30 Honda Motor Co Ltd 水冷バーチカルエンジンおよびこれを搭載した船外機
US7601223B2 (en) * 2003-04-29 2009-10-13 Asm International N.V. Showerhead assembly and ALD methods

Similar Documents

Publication Publication Date Title
JP2009212531A5 (enExample)
WO2009108221A3 (en) Thermalization of gaseous precursors in cvd reactors
WO2010054184A3 (en) Chemical vapor deposition with elevated temperature gas injection
JP2013505368A5 (enExample)
PL2304075T3 (pl) Reaktor CVD do osadzania warstw z mieszaniny gazów reakcyjnych na przedmiotach obrabianych
WO2012044622A3 (en) Low-temperature dielectric film formation by chemical vapor deposition
ATE516384T1 (de) Verfahren und system zur ablagerung eines metalls oder metalloids auf kohlenstoffnanoröhrchen
WO2012002995A3 (en) Thin films and methods of making them using cyclohexasilane
WO2012047812A3 (en) Atomic layer deposition of silicon nitride using dual-source precursor and interleaved plasma
WO2011156749A3 (en) Graphene deposition
EP2392547A3 (en) Method of graphene manufacturing
EP2419306A4 (en) HIGH PERFORMANCE REACTOR FOR EPITACTIC GAS PHASE SEPARATION (CVD)
WO2009103925A3 (fr) Croissance de nanotubes de carbone sur substrats de carbone ou metalliques
WO2010101369A3 (ko) 가스 분배 장치 및 이를 구비하는 기판 처리 장치
TW201348504A (zh) 沉積反應器之方法及裝置
JP2009269816A5 (enExample)
TW200732501A (en) High temperature ALD inlet manifold
CN103569998B (zh) 碳纳米管制备装置及方法
JP2014517498A5 (enExample)
EP2264219A4 (en) MATERIAL FOR GAS PHASE DEPOSITION, SILICONE-CONTAINING INSULATING FILM AND METHOD OF MANUFACTURING THEREOF
GB201205801D0 (en) Process
EP4065747C0 (en) SUBSTRATE SUPPORT DEVICE FOR REACTION CHAMBER OF GAS FLOW ROTATION EPITAXIAL REACTOR, REACTION CHAMBER, AND EPITAXIAL REACTOR
RU2011133919A (ru) Процесс получения поликристаллического кремния
MY159272A (en) Silicon thin film solar cell having improved haze and methods of making the same
WO2011156484A3 (en) Low-temperature synthesis of silica