DE112004001308T5 - Chemischer Bedampfungs-Reaktor - Google Patents
Chemischer Bedampfungs-Reaktor Download PDFInfo
- Publication number
- DE112004001308T5 DE112004001308T5 DE112004001308T DE112004001308T DE112004001308T5 DE 112004001308 T5 DE112004001308 T5 DE 112004001308T5 DE 112004001308 T DE112004001308 T DE 112004001308T DE 112004001308 T DE112004001308 T DE 112004001308T DE 112004001308 T5 DE112004001308 T5 DE 112004001308T5
- Authority
- DE
- Germany
- Prior art keywords
- chamber
- reaction gas
- wafer carrier
- vapor deposition
- chemical vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000126 substance Substances 0.000 title claims abstract description 15
- 230000008020 evaporation Effects 0.000 title description 4
- 238000001704 evaporation Methods 0.000 title description 4
- 239000012495 reaction gas Substances 0.000 claims abstract description 261
- 235000012431 wafers Nutrition 0.000 claims description 348
- 239000007789 gas Substances 0.000 claims description 190
- 238000005229 chemical vapour deposition Methods 0.000 claims description 131
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 124
- 239000004065 semiconductor Substances 0.000 claims description 119
- 238000000034 method Methods 0.000 claims description 117
- 229910021529 ammonia Inorganic materials 0.000 claims description 62
- 238000006243 chemical reaction Methods 0.000 claims description 45
- 239000012530 fluid Substances 0.000 claims description 45
- 230000008569 process Effects 0.000 claims description 44
- 125000000217 alkyl group Chemical group 0.000 claims description 41
- 239000000376 reactant Substances 0.000 claims description 40
- 239000012159 carrier gas Substances 0.000 claims description 22
- 230000001965 increasing effect Effects 0.000 claims description 19
- 238000004891 communication Methods 0.000 claims description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 14
- 229910002804 graphite Inorganic materials 0.000 claims description 13
- 239000010439 graphite Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 11
- 239000010453 quartz Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 230000000694 effects Effects 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 230000006698 induction Effects 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims description 3
- 230000007423 decrease Effects 0.000 claims description 2
- 230000003247 decreasing effect Effects 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims 10
- 230000008016 vaporization Effects 0.000 claims 3
- 238000009834 vaporization Methods 0.000 claims 3
- 150000001875 compounds Chemical class 0.000 claims 2
- 238000013022 venting Methods 0.000 claims 2
- 125000002947 alkylene group Chemical group 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 230000001276 controlling effect Effects 0.000 claims 1
- 230000003467 diminishing effect Effects 0.000 claims 1
- 238000007599 discharging Methods 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 abstract description 3
- 238000013461 design Methods 0.000 description 13
- 238000010276 construction Methods 0.000 description 11
- 150000004767 nitrides Chemical class 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 6
- 229910003465 moissanite Inorganic materials 0.000 description 6
- 229910010271 silicon carbide Inorganic materials 0.000 description 6
- 238000013459 approach Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 238000010574 gas phase reaction Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000007792 addition Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000009931 harmful effect Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 150000002739 metals Chemical group 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45504—Laminar flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45589—Movable means, e.g. fans
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Fluid Mechanics (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/621,049 US20050011459A1 (en) | 2003-07-15 | 2003-07-15 | Chemical vapor deposition reactor |
| US10/621,049 | 2003-07-15 | ||
| PCT/US2004/021001 WO2005010227A2 (en) | 2003-07-15 | 2004-06-29 | Chemical vapor deposition reactor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE112004001308T5 true DE112004001308T5 (de) | 2006-10-19 |
Family
ID=34062909
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112004001308T Withdrawn DE112004001308T5 (de) | 2003-07-15 | 2004-06-29 | Chemischer Bedampfungs-Reaktor |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US20050011459A1 (enExample) |
| JP (2) | JP2007531250A (enExample) |
| KR (1) | KR100816969B1 (enExample) |
| CN (1) | CN101036215A (enExample) |
| DE (1) | DE112004001308T5 (enExample) |
| GB (1) | GB2419896B (enExample) |
| TW (1) | TWI276698B (enExample) |
| WO (1) | WO2005010227A2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102007024798A1 (de) * | 2007-05-25 | 2008-11-27 | Aixtron Ag | Vorrichtung zum Abscheiden von GaN mittels GaCI mit einem molybdänmaskierten Quarzteil, insbesondere Gaseinlassorgan |
Families Citing this family (55)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7524532B2 (en) * | 2002-04-22 | 2009-04-28 | Aixtron Ag | Process for depositing thin layers on a substrate in a process chamber of adjustable height |
| US20050178336A1 (en) * | 2003-07-15 | 2005-08-18 | Heng Liu | Chemical vapor deposition reactor having multiple inlets |
| CN100535200C (zh) * | 2004-04-27 | 2009-09-02 | 松下电器产业株式会社 | Ⅲ族元素氮化物结晶制造装置以及ⅲ族元素氮化物结晶制造方法 |
| CN100358098C (zh) | 2005-08-05 | 2007-12-26 | 中微半导体设备(上海)有限公司 | 半导体工艺件处理装置 |
| KR100703214B1 (ko) * | 2006-01-02 | 2007-04-09 | 삼성전기주식회사 | 유성형 화학 기상 증착 장치 |
| JP5448456B2 (ja) * | 2006-01-18 | 2014-03-19 | オー・ツェー・エリコン・バルザース・アクチェンゲゼルシャフト | 円板状の基板の脱ガスをする装置 |
| KR101464228B1 (ko) * | 2007-01-12 | 2014-11-21 | 비코 인스트루먼츠 인코포레이티드 | 가스 처리 시스템 |
| US20090096349A1 (en) * | 2007-04-26 | 2009-04-16 | Moshtagh Vahid S | Cross flow cvd reactor |
| US8216419B2 (en) * | 2008-03-28 | 2012-07-10 | Bridgelux, Inc. | Drilled CVD shower head |
| US20080308036A1 (en) * | 2007-06-15 | 2008-12-18 | Hideki Ito | Vapor-phase growth apparatus and vapor-phase growth method |
| JP5038073B2 (ja) * | 2007-09-11 | 2012-10-03 | 株式会社ニューフレアテクノロジー | 半導体製造装置および半導体製造方法 |
| US8668775B2 (en) * | 2007-10-31 | 2014-03-11 | Toshiba Techno Center Inc. | Machine CVD shower head |
| WO2009085992A2 (en) | 2007-12-20 | 2009-07-09 | Applied Materials, Inc. | Thermal reactor with improved gas flow distribution |
| CN102084460A (zh) * | 2008-05-30 | 2011-06-01 | 奥塔装置公司 | 用于化学气相沉积反应器的方法和设备 |
| EP2353176A4 (en) * | 2008-11-07 | 2013-08-28 | Asm Inc | REACTION CHAMBER |
| EP3471130A1 (en) * | 2008-12-04 | 2019-04-17 | Veeco Instruments Inc. | Chemical vapor deposition flow inlet elements and methods |
| TWI398545B (zh) * | 2010-04-29 | 2013-06-11 | Chi Mei Lighting Tech Corp | 有機金屬化學氣相沉積機台 |
| US8562746B2 (en) * | 2010-12-15 | 2013-10-22 | Veeco Instruments Inc. | Sectional wafer carrier |
| WO2012092064A1 (en) * | 2010-12-30 | 2012-07-05 | Veeco Instruments Inc. | Wafer processing with carrier extension |
| US20130171350A1 (en) * | 2011-12-29 | 2013-07-04 | Intermolecular Inc. | High Throughput Processing Using Metal Organic Chemical Vapor Deposition |
| KR20130111029A (ko) * | 2012-03-30 | 2013-10-10 | 삼성전자주식회사 | 화학 기상 증착 장치용 서셉터 및 이를 구비하는 화학 기상 증착 장치 |
| TWI506163B (zh) * | 2012-07-13 | 2015-11-01 | Epistar Corp | 應用於氣相沉積的反應器及其承載裝置 |
| JP5904101B2 (ja) * | 2012-11-22 | 2016-04-13 | 豊田合成株式会社 | 化合物半導体の製造装置およびウェハ保持体 |
| CN104046959B (zh) * | 2013-06-08 | 2016-04-27 | 唐治 | 一种用于碳化硅外延生长的化学气相沉积装置 |
| TWI502096B (zh) | 2013-06-17 | 2015-10-01 | Ind Tech Res Inst | 用於化學氣相沉積的反應裝置及反應製程 |
| JP5971870B2 (ja) * | 2013-11-29 | 2016-08-17 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及び記録媒体 |
| TWI650832B (zh) | 2013-12-26 | 2019-02-11 | 維克儀器公司 | 用於化學氣相沉積系統之具有隔熱蓋的晶圓載具 |
| US20150280051A1 (en) * | 2014-04-01 | 2015-10-01 | Tsmc Solar Ltd. | Diffuser head apparatus and method of gas distribution |
| SG10201506020UA (en) * | 2014-08-19 | 2016-03-30 | Silcotek Corp | Chemical vapor deposition system, arrangement of chemical vapor deposition systems, and chemical vapor deposition method |
| JP6578158B2 (ja) * | 2015-08-28 | 2019-09-18 | 株式会社ニューフレアテクノロジー | 気相成長装置及び気相成長方法 |
| KR102381344B1 (ko) * | 2015-09-18 | 2022-03-31 | 삼성전자주식회사 | 캠형 가스 혼합부 및 이것을 포함하는 반도체 소자 제조 장치들 |
| US11832521B2 (en) | 2017-10-16 | 2023-11-28 | Akoustis, Inc. | Methods of forming group III-nitride single crystal piezoelectric thin films using ordered deposition and stress neutral template layers |
| JP6786307B2 (ja) * | 2016-08-29 | 2020-11-18 | 株式会社ニューフレアテクノロジー | 気相成長方法 |
| JP2018107156A (ja) * | 2016-12-22 | 2018-07-05 | 株式会社ニューフレアテクノロジー | 気相成長装置及び気相成長方法 |
| US10559451B2 (en) * | 2017-02-15 | 2020-02-11 | Applied Materials, Inc. | Apparatus with concentric pumping for multiple pressure regimes |
| USD860146S1 (en) | 2017-11-30 | 2019-09-17 | Veeco Instruments Inc. | Wafer carrier with a 33-pocket configuration |
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- 2004-06-29 JP JP2006520200A patent/JP2007531250A/ja active Pending
- 2004-06-29 CN CNA2004800261595A patent/CN101036215A/zh active Pending
- 2004-06-29 KR KR1020067001007A patent/KR100816969B1/ko not_active Expired - Fee Related
- 2004-06-29 DE DE112004001308T patent/DE112004001308T5/de not_active Withdrawn
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2009
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| Publication number | Priority date | Publication date | Assignee | Title |
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| DE102007024798A1 (de) * | 2007-05-25 | 2008-11-27 | Aixtron Ag | Vorrichtung zum Abscheiden von GaN mittels GaCI mit einem molybdänmaskierten Quarzteil, insbesondere Gaseinlassorgan |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2419896A (en) | 2006-05-10 |
| TW200516168A (en) | 2005-05-16 |
| WO2005010227A3 (en) | 2005-06-09 |
| WO2005010227A2 (en) | 2005-02-03 |
| TWI276698B (en) | 2007-03-21 |
| JP2007531250A (ja) | 2007-11-01 |
| US20050011459A1 (en) | 2005-01-20 |
| US20050011436A1 (en) | 2005-01-20 |
| KR100816969B1 (ko) | 2008-03-25 |
| GB0602942D0 (en) | 2006-03-22 |
| CN101036215A (zh) | 2007-09-12 |
| KR20060036095A (ko) | 2006-04-27 |
| GB2419896B (en) | 2007-09-05 |
| JP2009212531A (ja) | 2009-09-17 |
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