JP2007531250A - 化学気相成長反応装置 - Google Patents

化学気相成長反応装置 Download PDF

Info

Publication number
JP2007531250A
JP2007531250A JP2006520200A JP2006520200A JP2007531250A JP 2007531250 A JP2007531250 A JP 2007531250A JP 2006520200 A JP2006520200 A JP 2006520200A JP 2006520200 A JP2006520200 A JP 2006520200A JP 2007531250 A JP2007531250 A JP 2007531250A
Authority
JP
Japan
Prior art keywords
chamber
vapor deposition
chemical vapor
wafer carrier
reactor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006520200A
Other languages
English (en)
Japanese (ja)
Inventor
ヘン リュー
Original Assignee
ブリッジラックス インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ブリッジラックス インコーポレイテッド filed Critical ブリッジラックス インコーポレイテッド
Publication of JP2007531250A publication Critical patent/JP2007531250A/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45504—Laminar flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45589—Movable means, e.g. fans
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Fluid Mechanics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
JP2006520200A 2003-07-15 2004-06-29 化学気相成長反応装置 Pending JP2007531250A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/621,049 US20050011459A1 (en) 2003-07-15 2003-07-15 Chemical vapor deposition reactor
PCT/US2004/021001 WO2005010227A2 (en) 2003-07-15 2004-06-29 Chemical vapor deposition reactor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009144159A Division JP2009212531A (ja) 2003-07-15 2009-06-17 化学気相成長反応装置

Publications (1)

Publication Number Publication Date
JP2007531250A true JP2007531250A (ja) 2007-11-01

Family

ID=34062909

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2006520200A Pending JP2007531250A (ja) 2003-07-15 2004-06-29 化学気相成長反応装置
JP2009144159A Pending JP2009212531A (ja) 2003-07-15 2009-06-17 化学気相成長反応装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2009144159A Pending JP2009212531A (ja) 2003-07-15 2009-06-17 化学気相成長反応装置

Country Status (8)

Country Link
US (2) US20050011459A1 (enExample)
JP (2) JP2007531250A (enExample)
KR (1) KR100816969B1 (enExample)
CN (1) CN101036215A (enExample)
DE (1) DE112004001308T5 (enExample)
GB (1) GB2419896B (enExample)
TW (1) TWI276698B (enExample)
WO (1) WO2005010227A2 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014504023A (ja) * 2010-12-30 2014-02-13 ビーコ・インストゥルメンツ・インコーポレイテッド キャリア拡張部を用いるウェハ処理
JP2016044360A (ja) * 2014-08-19 2016-04-04 シルコテック コーポレーション 化学気相蒸着システム、化学気相蒸着システムの構成、および化学気相蒸着方法
JP2018107156A (ja) * 2016-12-22 2018-07-05 株式会社ニューフレアテクノロジー 気相成長装置及び気相成長方法

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7524532B2 (en) * 2002-04-22 2009-04-28 Aixtron Ag Process for depositing thin layers on a substrate in a process chamber of adjustable height
US20050178336A1 (en) * 2003-07-15 2005-08-18 Heng Liu Chemical vapor deposition reactor having multiple inlets
JP4790607B2 (ja) * 2004-04-27 2011-10-12 パナソニック株式会社 Ｉｉｉ族元素窒化物結晶製造装置およびｉｉｉ族元素窒化物結晶製造方法
CN100358098C (zh) * 2005-08-05 2007-12-26 中微半导体设备(上海)有限公司 半导体工艺件处理装置
KR100703214B1 (ko) * 2006-01-02 2007-04-09 삼성전기주식회사 유성형 화학 기상 증착 장치
CN101361164B (zh) * 2006-01-18 2011-04-20 Oc欧瑞康巴尔斯公司 用于盘状衬底除气的装置
CN101611472B (zh) * 2007-01-12 2015-03-25 威科仪器有限公司 气体处理系统
US20090096349A1 (en) * 2007-04-26 2009-04-16 Moshtagh Vahid S Cross flow cvd reactor
US8216419B2 (en) * 2008-03-28 2012-07-10 Bridgelux, Inc. Drilled CVD shower head
DE102007024798A1 (de) * 2007-05-25 2008-11-27 Aixtron Ag Vorrichtung zum Abscheiden von GaN mittels GaCI mit einem molybdänmaskierten Quarzteil, insbesondere Gaseinlassorgan
US20080308036A1 (en) * 2007-06-15 2008-12-18 Hideki Ito Vapor-phase growth apparatus and vapor-phase growth method
JP5038073B2 (ja) * 2007-09-11 2012-10-03 株式会社ニューフレアテクノロジー 半導体製造装置および半導体製造方法
US8668775B2 (en) * 2007-10-31 2014-03-11 Toshiba Techno Center Inc. Machine CVD shower head
KR20100114037A (ko) * 2007-12-20 2010-10-22 어플라이드 머티어리얼스, 인코포레이티드 향상된 가스 유동 분포를 가진 열 반응기
EP2281300A4 (en) * 2008-05-30 2013-07-17 Alta Devices Inc METHOD AND DEVICE FOR A CHEMICAL STEAM SEPARATION REACTOR
CN102203910B (zh) * 2008-11-07 2014-12-10 Asm美国公司 反应室
EP3471130A1 (en) * 2008-12-04 2019-04-17 Veeco Instruments Inc. Chemical vapor deposition flow inlet elements and methods
TWI398545B (zh) * 2010-04-29 2013-06-11 Chi Mei Lighting Tech Corp 有機金屬化學氣相沉積機台
US8562746B2 (en) * 2010-12-15 2013-10-22 Veeco Instruments Inc. Sectional wafer carrier
US20130171350A1 (en) * 2011-12-29 2013-07-04 Intermolecular Inc. High Throughput Processing Using Metal Organic Chemical Vapor Deposition
KR20130111029A (ko) * 2012-03-30 2013-10-10 삼성전자주식회사 화학 기상 증착 장치용 서셉터 및 이를 구비하는 화학 기상 증착 장치
TWI506163B (zh) * 2012-07-13 2015-11-01 Epistar Corp 應用於氣相沉積的反應器及其承載裝置
JP5904101B2 (ja) * 2012-11-22 2016-04-13 豊田合成株式会社 化合物半導体の製造装置およびウェハ保持体
CN203890438U (zh) * 2013-06-08 2014-10-22 唐治 一种用于碳化硅外延生长的化学气相沉积装置
TWI502096B (zh) * 2013-06-17 2015-10-01 Ind Tech Res Inst 用於化學氣相沉積的反應裝置及反應製程
JP5971870B2 (ja) * 2013-11-29 2016-08-17 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び記録媒体
TWI650832B (zh) 2013-12-26 2019-02-11 維克儀器公司 用於化學氣相沉積系統之具有隔熱蓋的晶圓載具
US20150280051A1 (en) * 2014-04-01 2015-10-01 Tsmc Solar Ltd. Diffuser head apparatus and method of gas distribution
JP6578158B2 (ja) * 2015-08-28 2019-09-18 株式会社ニューフレアテクノロジー 気相成長装置及び気相成長方法
KR102381344B1 (ko) * 2015-09-18 2022-03-31 삼성전자주식회사 캠형 가스 혼합부 및 이것을 포함하는 반도체 소자 제조 장치들
US11832521B2 (en) 2017-10-16 2023-11-28 Akoustis, Inc. Methods of forming group III-nitride single crystal piezoelectric thin films using ordered deposition and stress neutral template layers
JP6786307B2 (ja) * 2016-08-29 2020-11-18 株式会社ニューフレアテクノロジー 気相成長方法
US10559451B2 (en) * 2017-02-15 2020-02-11 Applied Materials, Inc. Apparatus with concentric pumping for multiple pressure regimes
USD860146S1 (en) 2017-11-30 2019-09-17 Veeco Instruments Inc. Wafer carrier with a 33-pocket configuration
USD866491S1 (en) 2018-03-26 2019-11-12 Veeco Instruments Inc. Chemical vapor deposition wafer carrier with thermal cover
USD860147S1 (en) 2018-03-26 2019-09-17 Veeco Instruments Inc. Chemical vapor deposition wafer carrier with thermal cover
USD858469S1 (en) 2018-03-26 2019-09-03 Veeco Instruments Inc. Chemical vapor deposition wafer carrier with thermal cover
USD854506S1 (en) 2018-03-26 2019-07-23 Veeco Instruments Inc. Chemical vapor deposition wafer carrier with thermal cover
USD863239S1 (en) 2018-03-26 2019-10-15 Veeco Instruments Inc. Chemical vapor deposition wafer carrier with thermal cover
CN109941963A (zh) * 2019-03-27 2019-06-28 常州大学 基于浮动催化法化学气相反应的微纳米结构直写装置
EP3760765B1 (en) 2019-07-03 2022-03-16 SiCrystal GmbH System for horizontal growth of high-quality semiconductor single crystals, and method of manufacturing same
CN112522684A (zh) * 2019-09-17 2021-03-19 夏泰鑫半导体(青岛)有限公司 前置样品室及晶片处理装置
DE102020101066A1 (de) * 2020-01-17 2021-07-22 Aixtron Se CVD-Reaktor mit doppelter Vorlaufzonenplatte
US11618968B2 (en) * 2020-02-07 2023-04-04 Akoustis, Inc. Apparatus including horizontal flow reactor with a central injector column having separate conduits for low-vapor pressure metalorganic precursors and other precursors for formation of piezoelectric layers on wafers
US12102010B2 (en) 2020-03-05 2024-09-24 Akoustis, Inc. Methods of forming films including scandium at low temperatures using chemical vapor deposition to provide piezoelectric resonator devices and/or high electron mobility transistor devices
CN111501020A (zh) * 2020-06-10 2020-08-07 北京北方华创微电子装备有限公司 半导体设备
TWI757781B (zh) * 2020-07-06 2022-03-11 大陸商蘇州雨竹機電有限公司 化學氣相沉積反應腔及其基板承載裝置
WO2022222000A1 (en) * 2021-04-19 2022-10-27 Innoscience (Suzhou) Technology Co., Ltd. Laminar flow mocvd apparatus for iii-nitride films
US12221695B2 (en) * 2021-05-18 2025-02-11 Mellanox Technologies, Ltd. CVD system with flange assembly for facilitating uniform and laminar flow
CN114768578B (zh) * 2022-05-20 2023-08-18 北京北方华创微电子装备有限公司 混气装置及半导体工艺设备
CN115537769B (zh) * 2022-12-01 2023-07-07 浙江晶越半导体有限公司 一种碳化硅化学气相沉积方法及反应器
CN116770264B (zh) * 2023-08-21 2023-11-14 合肥晶合集成电路股份有限公司 半导体器件的加工方法、装置、处理器和半导体加工设备
CN117438277B (zh) * 2023-12-19 2024-04-12 北京北方华创微电子装备有限公司 匀流组件、进气装置及半导体设备

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04209794A (ja) * 1990-12-10 1992-07-31 Hitachi Cable Ltd 気相膜成長装置

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3757733A (en) * 1971-10-27 1973-09-11 Texas Instruments Inc Radial flow reactor
JPH0645886B2 (ja) * 1985-12-16 1994-06-15 キヤノン株式会社 堆積膜形成法
US4798166A (en) * 1985-12-20 1989-01-17 Canon Kabushiki Kaisha Apparatus for continuously preparing a light receiving element for use in photoelectromotive force member or image-reading photosensor
JPH0779088B2 (ja) * 1986-03-13 1995-08-23 古河電気工業株式会社 半導体薄膜気相成長装置
US4980204A (en) * 1987-11-27 1990-12-25 Fujitsu Limited Metal organic chemical vapor deposition method with controlled gas flow rate
FR2628984B1 (fr) * 1988-03-22 1990-12-28 Labo Electronique Physique Reacteur d'epitaxie a planetaire
US5458724A (en) * 1989-03-08 1995-10-17 Fsi International, Inc. Etch chamber with gas dispersing membrane
US5334277A (en) * 1990-10-25 1994-08-02 Nichia Kagaky Kogyo K.K. Method of vapor-growing semiconductor crystal and apparatus for vapor-growing the same
JPH0766919B2 (ja) * 1991-02-20 1995-07-19 株式会社半導体プロセス研究所 半導体製造装置
US6165311A (en) * 1991-06-27 2000-12-26 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna
US5453124A (en) * 1992-12-30 1995-09-26 Texas Instruments Incorporated Programmable multizone gas injector for single-wafer semiconductor processing equipment
JPH07111244A (ja) * 1993-10-13 1995-04-25 Mitsubishi Electric Corp 気相結晶成長装置
US5596606A (en) * 1994-04-05 1997-01-21 Scientific-Atlanta, Inc. Synchronous detector and methods for synchronous detection
JPH08181076A (ja) * 1994-10-26 1996-07-12 Fuji Xerox Co Ltd 薄膜形成方法および薄膜形成装置
JP3360098B2 (ja) * 1995-04-20 2002-12-24 東京エレクトロン株式会社 処理装置のシャワーヘッド構造
KR100190909B1 (ko) * 1995-07-01 1999-06-01 윤덕용 화학기상증착 반응기용 다구역 샤워헤드
US6093252A (en) * 1995-08-03 2000-07-25 Asm America, Inc. Process chamber with inner support
US6465043B1 (en) * 1996-02-09 2002-10-15 Applied Materials, Inc. Method and apparatus for reducing particle contamination in a substrate processing chamber
KR100493684B1 (ko) * 1996-06-28 2005-09-12 램 리서치 코포레이션 고밀도플라즈마화학기상증착장치및그방법
US5653808A (en) * 1996-08-07 1997-08-05 Macleish; Joseph H. Gas injection system for CVD reactors
JP3901252B2 (ja) * 1996-08-13 2007-04-04 キヤノンアネルバ株式会社 化学蒸着装置
US5963840A (en) * 1996-11-13 1999-10-05 Applied Materials, Inc. Methods for depositing premetal dielectric layer at sub-atmospheric and high temperature conditions
WO1998023788A1 (en) * 1996-11-27 1998-06-04 Emcore Corporation Chemical vapor deposition apparatus
JPH1167675A (ja) * 1997-08-21 1999-03-09 Toshiba Ceramics Co Ltd 高速回転気相薄膜形成装置及びそれを用いる高速回転気相薄膜形成方法
TW429271B (en) * 1997-10-10 2001-04-11 Applied Materials Inc Introducing process fluid over rotating substrates
WO1999036587A1 (en) * 1998-01-15 1999-07-22 Torrex Equipment Corporation Vertical plasma enhanced process apparatus and method
US6080241A (en) * 1998-09-02 2000-06-27 Emcore Corporation Chemical vapor deposition chamber having an adjustable flow flange
US6430202B1 (en) * 1999-04-09 2002-08-06 Xerox Corporation Structure and method for asymmetric waveguide nitride laser diode
US6812157B1 (en) * 1999-06-24 2004-11-02 Prasad Narhar Gadgil Apparatus for atomic layer chemical vapor deposition
KR100349625B1 (ko) * 1999-08-06 2002-08-22 한국과학기술원 저온증착법에 의한 에피택셜 코발트다이실리사이드 콘택 형성방법
US6511539B1 (en) * 1999-09-08 2003-01-28 Asm America, Inc. Apparatus and method for growth of a thin film
US6576062B2 (en) * 2000-01-06 2003-06-10 Tokyo Electron Limited Film forming apparatus and film forming method
US6821910B2 (en) * 2000-07-24 2004-11-23 University Of Maryland, College Park Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation
DE10043600B4 (de) * 2000-09-01 2013-12-05 Aixtron Se Vorrichtung zum Abscheiden insbesondere kristalliner Schichten auf einem oder mehreren, insbesondere ebenfalls kristallinen Substraten
US6980204B1 (en) * 2000-09-21 2005-12-27 Jeffrey Charles Hawkins Charging and communication cable system for a mobile computer apparatus
KR20020088091A (ko) * 2001-05-17 2002-11-27 (주)한백 화합물 반도체 제조용 수평 반응로
US6591850B2 (en) * 2001-06-29 2003-07-15 Applied Materials, Inc. Method and apparatus for fluid flow control
US6590344B2 (en) * 2001-11-20 2003-07-08 Taiwan Semiconductor Manufacturing Co., Ltd. Selectively controllable gas feed zones for a plasma reactor
EP1452626B9 (en) * 2001-12-03 2012-01-18 Ulvac, Inc. Mixer, and device and method for manufacturing thin film
JP4071968B2 (ja) * 2002-01-17 2008-04-02 東芝三菱電機産業システム株式会社 ガス供給システム及びガス供給方法
KR100498609B1 (ko) * 2002-05-18 2005-07-01 주식회사 하이닉스반도체 배치형 원자층 증착 장치
US6843882B2 (en) * 2002-07-15 2005-01-18 Applied Materials, Inc. Gas flow control in a wafer processing system having multiple chambers for performing same process
JP2004132307A (ja) * 2002-10-11 2004-04-30 Honda Motor Co Ltd 水冷バーチカルエンジンおよびこれを搭載した船外機
US7601223B2 (en) * 2003-04-29 2009-10-13 Asm International N.V. Showerhead assembly and ALD methods

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04209794A (ja) * 1990-12-10 1992-07-31 Hitachi Cable Ltd 気相膜成長装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014504023A (ja) * 2010-12-30 2014-02-13 ビーコ・インストゥルメンツ・インコーポレイテッド キャリア拡張部を用いるウェハ処理
US9938621B2 (en) 2010-12-30 2018-04-10 Veeco Instruments Inc. Methods of wafer processing with carrier extension
US10167554B2 (en) 2010-12-30 2019-01-01 Veeco Instruments Inc. Wafer processing with carrier extension
JP2016044360A (ja) * 2014-08-19 2016-04-04 シルコテック コーポレーション 化学気相蒸着システム、化学気相蒸着システムの構成、および化学気相蒸着方法
JP2018107156A (ja) * 2016-12-22 2018-07-05 株式会社ニューフレアテクノロジー 気相成長装置及び気相成長方法

Also Published As

Publication number Publication date
DE112004001308T5 (de) 2006-10-19
GB0602942D0 (en) 2006-03-22
CN101036215A (zh) 2007-09-12
US20050011436A1 (en) 2005-01-20
US20050011459A1 (en) 2005-01-20
WO2005010227A2 (en) 2005-02-03
JP2009212531A (ja) 2009-09-17
WO2005010227A3 (en) 2005-06-09
GB2419896B (en) 2007-09-05
TW200516168A (en) 2005-05-16
KR100816969B1 (ko) 2008-03-25
TWI276698B (en) 2007-03-21
GB2419896A (en) 2006-05-10
KR20060036095A (ko) 2006-04-27

Similar Documents

Publication Publication Date Title
JP2007531250A (ja) 化学気相成長反応装置
JP4958798B2 (ja) 化学気相成長リアクタ及び化学気相成長法
JP6054873B2 (ja) トレイデバイスおよび結晶膜成長装置
US9053935B2 (en) Chemical vapor deposition with elevated temperature gas injection
JP2011500961A (ja) 化学気相成長反応器
US20110073039A1 (en) Semiconductor deposition system and method
JP6386901B2 (ja) 気相成長装置及び気相成長方法
CN102534563A (zh) 一种用于金属有机化学气相沉积反应器的斜入式气体喷淋头
CN106811736A (zh) 一种化学气相沉积装置
CN106498368A (zh) 一种用于mocvd设备的喷淋头
JP5015085B2 (ja) 気相成長装置
JP7495882B2 (ja) マルチゾーンインジェクターブロックを備える化学蒸着装置
JP2015209355A (ja) 結晶成長装置
KR100578089B1 (ko) 수소화물기상증착 반응기
CN103361624B (zh) 金属有机化合物化学气相沉积方法及其装置
JP2004165445A (ja) 半導体製造装置
JP6153489B2 (ja) 結晶成長装置
HK1131643B (en) Chemical vapor deposition reactor having multiple inlets
JP2012084581A (ja) 気相成長装置
JP2013171972A (ja) 気相成長装置および気相成長方法
GB2469225A (en) Chemical vapor deposition reactor having multiple inlets
CN112210826B (zh) 气相外延室
KR101060755B1 (ko) 화학 기상 증착장치

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090219

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090225

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20090511

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20090518

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090617

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20100106

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100430

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20100622

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20100806