WO2003078681A1 - Vorrichtung zum abscheiden von dünnen schichten auf einem substrat - Google Patents
Vorrichtung zum abscheiden von dünnen schichten auf einem substrat Download PDFInfo
- Publication number
- WO2003078681A1 WO2003078681A1 PCT/EP2003/002608 EP0302608W WO03078681A1 WO 2003078681 A1 WO2003078681 A1 WO 2003078681A1 EP 0302608 W EP0302608 W EP 0302608W WO 03078681 A1 WO03078681 A1 WO 03078681A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- gas outlet
- gas
- diffuser plate
- process chamber
- susceptor
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45568—Porous nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45572—Cooled nozzles
Definitions
- the invention relates to a device for depositing thin layers on a substrate, with a process chamber arranged in a reactor housing, the bottom of which is formed by a susceptor for receiving at least one substrate and the cover of which is associated with a gas inlet element, from which an essentially flat uniform distribution occurs the entire gas outlet surface pointing to the susceptor, the process gas can be introduced into the process chamber.
- Such a device is known from DE 695 04762 T2.
- This document describes an apparatus and a method for depositing III-V semiconductors on a substrate arranged in a process chamber, which lies on a susceptor which forms the bottom of a process chamber, the cover of which is formed by a gas inlet element.
- the gas inlet member has a flat gas outlet surface which extends parallel to the surface of the susceptor.
- the diameter of the susceptor is considerably larger than the clear distance between the susceptor and the gas outlet surface.
- the gas outlet surface has a plurality of openings opening there, to which channels are assigned, which penetrate the base plate of the gas inlet element and in a gas volume arise, which is fed from a gas supply line with the process gas.
- This shower head-like gas supply into the process chamber has the advantage that it enables homogeneous growth of the semiconductor layers on the substrates lying on the susceptor.
- the susceptor is heated inductively from below, that is to say from the side facing away from the process chamber, by means of a high-frequency coil.
- the susceptor can be rotated around its axis.
- the process gas is fed into the process chamber in a jet-like manner due to the nozzle-like openings.
- the "jets" emerging from the gas outlet openings relax above the diffusion boundary layer and abut one another there, so that there is no influence on the layer homogeneity. Any influences can also be reduced by increasing the process chamber pressure.
- the gas inlet element While the susceptor is being heated to a relatively high temperature, the gas inlet element has to be cooled in order to avoid premature decomposition of the process gases and parasitic deposits. In the prior art, this is done by water cooling the base plate of the gas inlet element.
- the gas outlet surface is formed by a gas-permeable diffuser plate.
- This diffuser plate can extend parallel to a gas outlet plate having a plurality of gas outlet openings arranged in a sieve shape.
- This gas outlet plate can form the bottom of a chamber of the gas inlet member.
- the distance between the susceptor and the gas outlet surface, that is to say the underside of the diffuser plate, is preferably less than 80 mm or 50 mm. This distance can even be less than 40 mm or less than 30 mm. It is also provided that this distance is less than 25 mm, 20 mm, 16 mm or less than 11 mm.
- the process chamber is surrounded by a gas outlet ring.
- This gas outlet ring has a plurality of openings directed towards the center of the circular process chamber, through which the gas can flow from the process chamber into the cavity of the gas outlet ring.
- the gas outlet ring there is one or more discharge lines leading to a pump whose pumping capacity is adjustable so that the total pressure within the process chamber can be set.
- the diffuser plate can preferably consist of a porous material.
- the porous material can be formed from a metallic material, a ceramic material or from quartz glass.
- the diffuser plate can be a solid, open-cell foam. However, the diffuser plate can also be formed from a multi-layer fabric or a scrim.
- the diffuser plate widens the gas flow introduced at different, spatially separated positions, so that a homogeneous gas curtain flows into the process chamber.
- the diffuser plate can be arranged in touching contact under the gas outlet plate of the gas inlet element. Since the gas outlet plate of the gas inlet element can be cooled, as described, for example, in DE 695 04762 T2, the diffuser plate is also cooled as a result of the contacting system.
- the spacing of the openings provided in the gas outlet plate in a sieve-like manner can, according to this configuration, be made relatively large, so that between these openings, which can be formed by tubes, there is still sufficient space for a volume through which coolant can flow. The distance between the openings can thus be greater than a quarter of the distance between the susceptor and the gas outlet surface.
- the spacing of the openings of the gas outlet plate can be even greater than is normally necessary in order to achieve relaxation of the jets emerging from the openings in front of the diffusion boundary layer.
- the gas flows into the diffuser plate in a jet-like manner from these openings, the gas enters the process chamber at a reduced flow rate, which is in particular the same over the entire area of the gas outlet area. There are practically no more discrete jets emerging from the gas inlet member.
- the material thickness of the diffuser plate can be selected so that its underside, which faces the process chamber, still has a temperature ratures in which there is no local decomposition of the starting materials. There is therefore no limiting growth. Typically, the temperature of the diffuser plate surface is between 100 ° C and 300 ° C.
- the porosity and the material thickness as well as the thermal conductivity of the diffuser plate can be adapted to the respective process parameters and in particular to the carrier gas.
- the process chamber height can be reduced to values that are smaller than with a conventional design of the gas outlet surface. This is particularly advantageous when depositing semiconductor layers using the MOCVD method, in which the growth is limited by diffusion.
- the process gas is fed directly into the diffusion zone, homogeneously.
- the reactor housing 1 consists of a lower housing part, which consists of the wall 4 and the bottom 5, and a cover part 3, which can be removed for loading the process chamber 6.
- a gas inlet element 2 is fixedly attached to the cover part 3.
- This gas inlet element 2 is fed by means of a gas feed line 17.
- the gas inlet member 2 has a hollow chamber into which the gas feed line 17 opens. This chamber is delimited at the top by a cover plate 11, on the side by a circular ring 12 and on the process chamber 6 by a gas outlet plate 13, the gas outlet plate can be water-cooled in the form as described in DE 695 04762 T2. It can also consist of two plates 13 ', 13 "between which coolant through which channels can be arranged.
- a diffuser plate 15 is located below the gas outlet plate 13. The diffuser plate 15 is an additional plate which is brought into contact with the gas outlet plate 13.
- a circular susceptor 7 in parallel to the diffuser plate 15, which can be inductively heated from below by means of an HF heating coil 16.
- the susceptor 7, which can consist of quartz, graphite or coated graphite, for example, can be rotated about its central axis. It is driven by rotation.
- One or more substrates 8 can be applied to the surface of the susceptor 7, which faces the diffuser plate 15.
- the process chamber 6 is surrounded by a gas outlet ring 9.
- This gas outlet ring has an annular cavity which has openings to the process chamber 6 through which the process gas can flow into the cavity of the gas outlet ring 9.
- the gas outlet ring 9 has leads, not shown in the drawing, which lead to a pump, not shown.
- the pump output is adjustable. A predetermined total gas pressure can thereby be set within the process chamber 6.
- the diffuser plate 15 can be made of a porous material. For example, it can be formed by a quartz frit.
- the diffuser plate can also be made of metal, especially stainless steel. Ceramic is also provided as the material.
- the diffuser plate can have the structure of an open-pore hard foam.
- the diffuser plate can also be a random scrim or a multi-layer fabric.
- An essential feature of the diffuser plate 15 is its property of uniformly guiding the gas flowing out of the gas volume of the gas inlet element 2 through the gas inlet openings 14 and having a high gas velocity into the process chamber 6.
- the diffuser plate 15 lies in close contact with the water-cooled gas outlet plate 13 in particular. As a result, the diffuser plate 15 is also kept at a relatively low temperature, so that a large vertical temperature gradient can be established in the process chamber 6.
- the device can be operated at total gas pressures between 10 mbar and atmospheric pressure. However, it is also provided that the device is operated at lower pressures.
- the speed of the susceptor can be between 10 rpm and 1000 rpm.
- a total gas flow of 8 slm to 50 slm can be introduced into the process chamber, which preferably has a height of 50 mm and a diameter of more than 10, 20 or 30 cm.
- the height of the process chamber can also be less than 50 mm. So are Process chamber heights of 75, 50, 40, 35, 30, 25, 15, 11 or a few millimeters possible.
- the height H is not only limited upwards, but also downwards. Such a downward limitation is particularly provided if, due to manufacturing tolerances or due to the material properties and their inhomogeneous thermal expansion, a parallel position between the gas outlet surface 15 and the substrate holder surface cannot be guaranteed. Then it is advantageous if the process chamber height does not fall below 11 mm.
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003576671A JP2005520932A (ja) | 2002-03-15 | 2003-03-13 | 基板上への薄膜堆積装置 |
KR10-2004-7013660A KR20040101261A (ko) | 2002-03-15 | 2003-03-13 | 기판의 박막증착장치 |
EP03708229A EP1485518A1 (de) | 2002-03-15 | 2003-03-13 | Vorrichtung zum abscheiden von d nnen schichten auf einem su bstrat |
AU2003212349A AU2003212349A1 (en) | 2002-03-15 | 2003-03-13 | Device for depositing thin layers on a substrate |
US10/941,155 US20050081788A1 (en) | 2002-03-15 | 2004-09-15 | Device for depositing thin layers on a substrate |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10211442A DE10211442A1 (de) | 2002-03-15 | 2002-03-15 | Vorrichtung zum Abscheiden von dünnen Schichten auf einem Substrat |
DE10211442.0 | 2002-03-15 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/941,155 Continuation US20050081788A1 (en) | 2002-03-15 | 2004-09-15 | Device for depositing thin layers on a substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2003078681A1 true WO2003078681A1 (de) | 2003-09-25 |
Family
ID=27771333
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2003/002608 WO2003078681A1 (de) | 2002-03-15 | 2003-03-13 | Vorrichtung zum abscheiden von dünnen schichten auf einem substrat |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP1485518A1 (de) |
JP (1) | JP2005520932A (de) |
KR (1) | KR20040101261A (de) |
AU (1) | AU2003212349A1 (de) |
DE (1) | DE10211442A1 (de) |
TW (1) | TW200305658A (de) |
WO (1) | WO2003078681A1 (de) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1386981A1 (de) * | 2002-07-05 | 2004-02-04 | Ulvac, Inc. | Gerät zur Herstellung von Dünnschichten |
JP2008516084A (ja) * | 2004-10-11 | 2008-05-15 | ベーカート・アドヴァンスト・コーティングス | 長型ガス分配システム |
CN102766902A (zh) * | 2011-05-05 | 2012-11-07 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 工艺腔室装置和具有该工艺腔室装置的基片处理设备 |
US9200368B2 (en) | 2004-05-12 | 2015-12-01 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser hole design |
US9580804B2 (en) | 2007-06-22 | 2017-02-28 | Applied Materials, Inc. | Diffuser support |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102006018515A1 (de) | 2006-04-21 | 2007-10-25 | Aixtron Ag | CVD-Reaktor mit absenkbarer Prozesskammerdecke |
DE102007024798A1 (de) | 2007-05-25 | 2008-11-27 | Aixtron Ag | Vorrichtung zum Abscheiden von GaN mittels GaCI mit einem molybdänmaskierten Quarzteil, insbesondere Gaseinlassorgan |
KR101065747B1 (ko) * | 2009-06-22 | 2011-09-19 | 주식회사 티지솔라 | 균일한 가스 공급수단을 구비하는 플라즈마 장치 |
DE102009043840A1 (de) * | 2009-08-24 | 2011-03-03 | Aixtron Ag | CVD-Reaktor mit streifenförmig verlaufenden Gaseintrittszonen sowie Verfahren zum Abscheiden einer Schicht auf einem Substrat in einem derartigen CVD-Reaktor |
DE102011107894A1 (de) | 2011-07-18 | 2013-01-24 | Creaphys Gmbh | Beschichtungseinrichtung, insbesondere für die Innenbeschichtung von Hohlkörpern, und Beschichtungsverfahren |
DE102012110125A1 (de) | 2012-10-24 | 2014-04-24 | Aixtron Se | Vorrichtung zum Behandeln von Substraten mit einer auswechselbaren Deckenplatte sowie Verfahren zum Auswechseln einer derartigen Deckenplatte |
DE102014118704A1 (de) | 2014-01-10 | 2015-07-16 | Aixtron Se | Gaseinlassorgan eines CVD-Reaktors mit gewichtsverminderter Gasaustrittsplatte |
CN117004928B (zh) * | 2023-09-21 | 2023-12-26 | 上海谙邦半导体设备有限公司 | 一种化学气相沉积晶圆保护系统 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4102198A1 (de) * | 1990-01-26 | 1991-08-08 | Fuji Electric Co Ltd | Rf-plasma-cvd-vorrichtung und duennfilm-herstellungsverfahren unter anwendung der vorrichtung |
US5102689A (en) * | 1989-08-17 | 1992-04-07 | U.S. Philips Corporation | Method of depositing microcrystalline solid particles from the gas phase by means of chemical vapor deposition |
JPH062149A (ja) * | 1992-06-19 | 1994-01-11 | Matsushita Electric Works Ltd | プラズマ処理方法およびその装置 |
US5595602A (en) * | 1995-08-14 | 1997-01-21 | Motorola, Inc. | Diffuser for uniform gas distribution in semiconductor processing and method for using the same |
US5766364A (en) * | 1996-07-17 | 1998-06-16 | Matsushita Electric Industrial Co., Ltd. | Plasma processing apparatus |
US20010042514A1 (en) * | 2000-05-17 | 2001-11-22 | Shigeru Mizuno | CVD apparatus |
-
2002
- 2002-03-15 DE DE10211442A patent/DE10211442A1/de not_active Ceased
-
2003
- 2003-03-13 AU AU2003212349A patent/AU2003212349A1/en not_active Abandoned
- 2003-03-13 EP EP03708229A patent/EP1485518A1/de not_active Withdrawn
- 2003-03-13 WO PCT/EP2003/002608 patent/WO2003078681A1/de active Application Filing
- 2003-03-13 KR KR10-2004-7013660A patent/KR20040101261A/ko not_active Application Discontinuation
- 2003-03-13 JP JP2003576671A patent/JP2005520932A/ja active Pending
- 2003-03-14 TW TW092105594A patent/TW200305658A/zh unknown
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5102689A (en) * | 1989-08-17 | 1992-04-07 | U.S. Philips Corporation | Method of depositing microcrystalline solid particles from the gas phase by means of chemical vapor deposition |
DE4102198A1 (de) * | 1990-01-26 | 1991-08-08 | Fuji Electric Co Ltd | Rf-plasma-cvd-vorrichtung und duennfilm-herstellungsverfahren unter anwendung der vorrichtung |
JPH062149A (ja) * | 1992-06-19 | 1994-01-11 | Matsushita Electric Works Ltd | プラズマ処理方法およびその装置 |
US5595602A (en) * | 1995-08-14 | 1997-01-21 | Motorola, Inc. | Diffuser for uniform gas distribution in semiconductor processing and method for using the same |
US5766364A (en) * | 1996-07-17 | 1998-06-16 | Matsushita Electric Industrial Co., Ltd. | Plasma processing apparatus |
US20010042514A1 (en) * | 2000-05-17 | 2001-11-22 | Shigeru Mizuno | CVD apparatus |
Non-Patent Citations (1)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 018, no. 201 (C - 1188) 8 April 1994 (1994-04-08) * |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1386981A1 (de) * | 2002-07-05 | 2004-02-04 | Ulvac, Inc. | Gerät zur Herstellung von Dünnschichten |
US9200368B2 (en) | 2004-05-12 | 2015-12-01 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser hole design |
US10262837B2 (en) | 2004-05-12 | 2019-04-16 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser hole design |
US10312058B2 (en) | 2004-05-12 | 2019-06-04 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser hole design |
JP2008516084A (ja) * | 2004-10-11 | 2008-05-15 | ベーカート・アドヴァンスト・コーティングス | 長型ガス分配システム |
US9580804B2 (en) | 2007-06-22 | 2017-02-28 | Applied Materials, Inc. | Diffuser support |
CN102766902A (zh) * | 2011-05-05 | 2012-11-07 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 工艺腔室装置和具有该工艺腔室装置的基片处理设备 |
CN102766902B (zh) * | 2011-05-05 | 2015-12-02 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 工艺腔室装置和具有该工艺腔室装置的基片处理设备 |
Also Published As
Publication number | Publication date |
---|---|
DE10211442A1 (de) | 2003-09-25 |
AU2003212349A1 (en) | 2003-09-29 |
KR20040101261A (ko) | 2004-12-02 |
TW200305658A (en) | 2003-11-01 |
JP2005520932A (ja) | 2005-07-14 |
EP1485518A1 (de) | 2004-12-15 |
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