DE69116033T2 - Reaktor zur Behandlung von Halbleiterscheiben. - Google Patents

Reaktor zur Behandlung von Halbleiterscheiben.

Info

Publication number
DE69116033T2
DE69116033T2 DE1991616033 DE69116033T DE69116033T2 DE 69116033 T2 DE69116033 T2 DE 69116033T2 DE 1991616033 DE1991616033 DE 1991616033 DE 69116033 T DE69116033 T DE 69116033T DE 69116033 T2 DE69116033 T2 DE 69116033T2
Authority
DE
Germany
Prior art keywords
semiconductor wafer
treatment reactor
wafer treatment
reactor
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE1991616033
Other languages
English (en)
Other versions
DE69116033D1 (de
Inventor
Roger N Anderson
Paul R Lindstrom
Wayne Johnson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of DE69116033D1 publication Critical patent/DE69116033D1/de
Publication of DE69116033T2 publication Critical patent/DE69116033T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
DE1991616033 1990-08-23 1991-08-22 Reaktor zur Behandlung von Halbleiterscheiben. Expired - Fee Related DE69116033T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US57195790A 1990-08-23 1990-08-23

Publications (2)

Publication Number Publication Date
DE69116033D1 DE69116033D1 (de) 1996-02-15
DE69116033T2 true DE69116033T2 (de) 1996-09-19

Family

ID=24285758

Family Applications (2)

Application Number Title Priority Date Filing Date
DE1991616033 Expired - Fee Related DE69116033T2 (de) 1990-08-23 1991-08-22 Reaktor zur Behandlung von Halbleiterscheiben.
DE1991633144 Expired - Fee Related DE69133144T2 (de) 1990-08-23 1991-08-22 Reaktor zur Behandlung von Wafern

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE1991633144 Expired - Fee Related DE69133144T2 (de) 1990-08-23 1991-08-22 Reaktor zur Behandlung von Wafern

Country Status (3)

Country Link
EP (2) EP0688887B1 (de)
JP (1) JP2641351B2 (de)
DE (2) DE69116033T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5221556A (en) * 1987-06-24 1993-06-22 Epsilon Technology, Inc. Gas injectors for reaction chambers in CVD systems
JP2790009B2 (ja) * 1992-12-11 1998-08-27 信越半導体株式会社 シリコンエピタキシャル層の成長方法および成長装置
EP0606751B1 (de) * 1993-01-13 2002-03-06 Applied Materials, Inc. Verfahren zur Abscheidung von Polysiliziumschichten mit einer verbesserten Uniformität und dazugehörige Vorrichtung
DE69433656T2 (de) * 1993-07-30 2005-02-17 Applied Materials, Inc., Santa Clara Verfahren zum Einleiten reaktiven Gases in eine Substratbearbeitungsvorrichtung
US6500734B2 (en) 1993-07-30 2002-12-31 Applied Materials, Inc. Gas inlets for wafer processing chamber
US5551982A (en) * 1994-03-31 1996-09-03 Applied Materials, Inc. Semiconductor wafer process chamber with susceptor back coating
US6489241B1 (en) * 1999-09-17 2002-12-03 Applied Materials, Inc. Apparatus and method for surface finishing a silicon film
JP5257424B2 (ja) * 2004-04-27 2013-08-07 株式会社Ｓｕｍｃｏ エピタキシャル成長装置
JP2008172111A (ja) * 2007-01-15 2008-07-24 Tokyo Electron Ltd リフロー処理装置およびリフロー処理方法
WO2009085992A2 (en) * 2007-12-20 2009-07-09 Applied Materials, Inc. Thermal reactor with improved gas flow distribution
KR101525210B1 (ko) * 2013-12-20 2015-06-05 주식회사 유진테크 기판 처리장치
CN110596327B (zh) * 2019-06-25 2022-08-02 北京机械设备研究所 一种污染气体成分及浓度检测方法
CN112281126B (zh) * 2020-10-29 2022-11-25 河南卓金光电科技股份有限公司 一种反应磁控溅射分离式布气法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5613718A (en) * 1979-07-13 1981-02-10 Hitachi Ltd Device for growing semiconductor at gas phase
US4731255A (en) * 1984-09-26 1988-03-15 Applied Materials Japan, Inc. Gas-phase growth process and an apparatus for the same
EP0254651B1 (de) * 1986-06-28 1991-09-04 Nihon Shinku Gijutsu Kabushiki Kaisha Verfahren und Vorrichtung zum Beschichten unter Anwendung einer CVD-Beschichtungstechnik
US4800105A (en) * 1986-07-22 1989-01-24 Nihon Shinku Gijutsu Kabushiki Kaisha Method of forming a thin film by chemical vapor deposition
JPS6328867A (ja) * 1986-07-22 1988-02-06 Ulvac Corp Ｃｖｄ法
US5221556A (en) * 1987-06-24 1993-06-22 Epsilon Technology, Inc. Gas injectors for reaction chambers in CVD systems
JPH01168023A (ja) * 1987-12-23 1989-07-03 Sharp Corp 半導体製造装置
DE3884810T2 (de) * 1988-06-22 1994-05-05 Advanced Semiconductor Mat Gaseinspritzvorrichtung für reaktoren für den chemischen dampfniederschlag.
JPH04504442A (ja) * 1988-12-21 1992-08-06 モンコブスキー―ライン・インコーポレイテッド 化学気相成長反応装置とその使用方法
JPH02234419A (ja) * 1989-03-07 1990-09-17 Koujiyundo Kagaku Kenkyusho:Kk プラズマ電極

Also Published As

Publication number Publication date
DE69133144T2 (de) 2003-07-31
EP0473067A1 (de) 1992-03-04
EP0473067B1 (de) 1996-01-03
JPH04233723A (ja) 1992-08-21
DE69133144D1 (de) 2002-12-12
JP2641351B2 (ja) 1997-08-13
DE69116033D1 (de) 1996-02-15
EP0688887B1 (de) 2002-11-06
EP0688887A1 (de) 1995-12-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee