DE69119755T2 - Verbesserte glühfilament-cvd-anlage - Google Patents
Verbesserte glühfilament-cvd-anlageInfo
- Publication number
- DE69119755T2 DE69119755T2 DE69119755T DE69119755T DE69119755T2 DE 69119755 T2 DE69119755 T2 DE 69119755T2 DE 69119755 T DE69119755 T DE 69119755T DE 69119755 T DE69119755 T DE 69119755T DE 69119755 T2 DE69119755 T2 DE 69119755T2
- Authority
- DE
- Germany
- Prior art keywords
- support plate
- reactor
- substrate
- film cvd
- improved glow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/271—Diamond only using hot filaments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45568—Porous nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US49715990A | 1990-03-20 | 1990-03-20 | |
PCT/US1991/001698 WO1991014798A1 (en) | 1990-03-20 | 1991-03-13 | An improved hot filament chemical vapor deposition reactor |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69119755D1 DE69119755D1 (de) | 1996-06-27 |
DE69119755T2 true DE69119755T2 (de) | 1996-09-26 |
Family
ID=23975708
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69119755T Expired - Fee Related DE69119755T2 (de) | 1990-03-20 | 1991-03-13 | Verbesserte glühfilament-cvd-anlage |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0521078B1 (de) |
AT (1) | ATE138421T1 (de) |
DE (1) | DE69119755T2 (de) |
DK (1) | DK0521078T3 (de) |
WO (1) | WO1991014798A1 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2785442B2 (ja) * | 1990-05-15 | 1998-08-13 | 三菱重工業株式会社 | プラズマcvd装置 |
US5362228A (en) * | 1991-11-04 | 1994-11-08 | Societe Europeenne De Propulsion | Apparatus for preheating a flow of gas in an installation for chemical vapor infiltration, and a densification method using the apparatus |
FR2727693A1 (fr) * | 1994-12-06 | 1996-06-07 | Centre Nat Rech Scient | Reacteur pour le depot de couches minces en phase vapeur (cvd) |
US5670218A (en) * | 1995-10-04 | 1997-09-23 | Hyundai Electronics Industries Co., Ltd. | Method for forming ferroelectric thin film and apparatus therefor |
US6161499A (en) * | 1997-07-07 | 2000-12-19 | Cvd Diamond Corporation | Apparatus and method for nucleation and deposition of diamond using hot-filament DC plasma |
DE102009015545B4 (de) * | 2009-03-02 | 2013-10-17 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Beschichtungsanlage mit Aktivierungselement, deren Verwendung sowie Verfahren zur Abscheidung einer Beschichtung |
FR2959756B1 (fr) * | 2010-05-04 | 2012-08-03 | Global Technologies | Reacteur pyrolytique a pompage axial |
DE102012214784B4 (de) * | 2012-08-20 | 2015-07-23 | Schunk Kohlenstofftechnik Gmbh | Anlage zur chemischen Gasphasenabscheidung mit Kohlenstofffaser-Filamenten sowie Verfahren zur Herstellung der Kohlenstofffaser-Filamente |
CN106480424A (zh) * | 2016-09-28 | 2017-03-08 | 同济大学 | 一种适用于hfcvd设备的温度场补偿装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58190030A (ja) * | 1982-04-30 | 1983-11-05 | Kokusai Electric Co Ltd | 平行平板電極を有するプラズマエッチング装置 |
JPS5921026A (ja) * | 1982-07-28 | 1984-02-02 | Hitachi Ltd | 半導体製造装置 |
JPS5943861A (ja) * | 1982-09-03 | 1984-03-12 | Ulvac Corp | ル−バ−式化学的蒸着装置 |
-
1991
- 1991-03-13 AT AT91906869T patent/ATE138421T1/de not_active IP Right Cessation
- 1991-03-13 DK DK91906869.2T patent/DK0521078T3/da active
- 1991-03-13 DE DE69119755T patent/DE69119755T2/de not_active Expired - Fee Related
- 1991-03-13 WO PCT/US1991/001698 patent/WO1991014798A1/en active IP Right Grant
- 1991-03-13 EP EP91906869A patent/EP0521078B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69119755D1 (de) | 1996-06-27 |
DK0521078T3 (da) | 1996-09-09 |
WO1991014798A1 (en) | 1991-10-03 |
EP0521078A4 (de) | 1994-08-31 |
ATE138421T1 (de) | 1996-06-15 |
EP0521078A1 (de) | 1993-01-07 |
EP0521078B1 (de) | 1996-05-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |