DE69009893D1 - Vorrichtung zur Abscheidung von synthetischem Diamant, die unter Federdruck stehende Drähte enthält. - Google Patents

Vorrichtung zur Abscheidung von synthetischem Diamant, die unter Federdruck stehende Drähte enthält.

Info

Publication number
DE69009893D1
DE69009893D1 DE69009893T DE69009893T DE69009893D1 DE 69009893 D1 DE69009893 D1 DE 69009893D1 DE 69009893 T DE69009893 T DE 69009893T DE 69009893 T DE69009893 T DE 69009893T DE 69009893 D1 DE69009893 D1 DE 69009893D1
Authority
DE
Germany
Prior art keywords
spring pressure
under spring
synthetic diamond
filaments
wires under
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69009893T
Other languages
English (en)
Other versions
DE69009893T2 (de
Inventor
Thomas Richard Anthony
Richard Allen Engler
Robert Helmut Ettinger
James Fulton Fleischer
Robert Charles Devries
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of DE69009893D1 publication Critical patent/DE69009893D1/de
Application granted granted Critical
Publication of DE69009893T2 publication Critical patent/DE69009893T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/271—Diamond only using hot filaments

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Springs (AREA)
  • Wire Processing (AREA)
  • Chemical Vapour Deposition (AREA)
DE69009893T 1989-08-03 1990-07-23 Vorrichtung zur Abscheidung von synthetischem Diamant, die unter Federdruck stehende Drähte enthält. Expired - Fee Related DE69009893T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US38921089A 1989-08-03 1989-08-03
US07/469,986 US4970986A (en) 1989-08-03 1990-01-25 Apparatus for synthetic diamond deposition including spring-tensioned filaments

Publications (2)

Publication Number Publication Date
DE69009893D1 true DE69009893D1 (de) 1994-07-21
DE69009893T2 DE69009893T2 (de) 1994-11-17

Family

ID=27012594

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69009893T Expired - Fee Related DE69009893T2 (de) 1989-08-03 1990-07-23 Vorrichtung zur Abscheidung von synthetischem Diamant, die unter Federdruck stehende Drähte enthält.

Country Status (7)

Country Link
US (1) US4970986A (de)
EP (1) EP0411424B1 (de)
JP (1) JPH03120369A (de)
KR (1) KR910004297A (de)
AT (1) ATE107365T1 (de)
DE (1) DE69009893T2 (de)
IE (1) IE901886A1 (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6413589B1 (en) 1988-11-29 2002-07-02 Chou H. Li Ceramic coating method
US5110579A (en) * 1989-09-14 1992-05-05 General Electric Company Transparent diamond films and method for making
WO1992001828A1 (en) * 1990-07-18 1992-02-06 Sumitomo Electric Industries, Ltd. Method and device for manufacturing diamond
EP0492160A1 (de) * 1990-12-20 1992-07-01 General Electric Company Symmetrische Diamant-Gegenstände und Verfahren zu ihrer Herstellung
US5145712A (en) * 1991-02-08 1992-09-08 Center For Innovative Technology Chemical deposition of diamond
GB9123331D0 (en) * 1991-11-04 1991-12-18 De Beers Ind Diamond Apparatus for depositing a material on a substrate by chemical vapour deposition
CA2087771A1 (en) * 1992-02-28 1993-08-29 Sanjay M. Correa Preheater for cvd diamond reactor
JP3381319B2 (ja) * 1993-08-06 2003-02-24 住友電気工業株式会社 ダイヤモンド合成方法
US5479874A (en) * 1993-09-29 1996-01-02 General Electric Company CVD diamond production using preheating
US5833753A (en) * 1995-12-20 1998-11-10 Sp 3, Inc. Reactor having an array of heating filaments and a filament force regulator
DE19701696C2 (de) * 1997-01-20 1999-02-18 Fraunhofer Ges Forschung Vorrichtung und Verfahren zur Beschichtung eines Substrates mittels eines chemischen Gasphasenabscheideverfahrens
US6286206B1 (en) 1997-02-25 2001-09-11 Chou H. Li Heat-resistant electronic systems and circuit boards
US5937514A (en) 1997-02-25 1999-08-17 Li; Chou H. Method of making a heat-resistant system
US6458017B1 (en) 1998-12-15 2002-10-01 Chou H. Li Planarizing method
US6676492B2 (en) 1998-12-15 2004-01-13 Chou H. Li Chemical mechanical polishing
US6976904B2 (en) * 1998-07-09 2005-12-20 Li Family Holdings, Ltd. Chemical mechanical polishing slurry
JP3298001B2 (ja) * 1998-07-27 2002-07-02 株式会社スーパーシリコン研究所 エピタキシャル成長炉
US6692574B1 (en) * 1999-08-30 2004-02-17 Si Diamond Technology, Inc. Gas dispersion apparatus for use in a hot filament chemical vapor deposition chamber
KR100382943B1 (ko) * 2001-02-26 2003-05-09 프리시젼다이아몬드 주식회사 고온 열 필라멘트를 이용한 기상화학다이아몬드증착장치
KR100688838B1 (ko) * 2005-05-13 2007-03-02 삼성에스디아이 주식회사 촉매 화학기상증착장치 및 촉매 화학기상증착방법
US8916001B2 (en) * 2006-04-05 2014-12-23 Gvd Corporation Coated molds and related methods and components
JP4763533B2 (ja) * 2006-07-03 2011-08-31 忠義 松尾 果菜類の成形栽培ケース
US9157152B2 (en) * 2007-03-29 2015-10-13 Tokyo Electron Limited Vapor deposition system
CA2618459C (en) 2007-07-26 2015-10-06 Bessey Tool Gmbh & Co. Kg Clamp
US8291856B2 (en) * 2008-03-07 2012-10-23 Tokyo Electron Limited Gas heating device for a vapor deposition system
DE102008044025A1 (de) * 2008-11-24 2010-08-05 Cemecon Ag Vorrichtung und Verfahren zum Beschichten eines Substrats mittels CVD
DE102008044028A1 (de) * 2008-11-24 2010-08-12 Cemecon Ag Vorrichtung und Verfahren zum Beschichten eines Substrats mittels CVD
US8272347B2 (en) * 2009-09-14 2012-09-25 Tokyo Electron Limited High temperature gas heating device for a vapor deposition system
US8852347B2 (en) * 2010-06-11 2014-10-07 Tokyo Electron Limited Apparatus for chemical vapor deposition control
EP2420591B1 (de) * 2010-08-20 2013-10-30 Echerkon Technologies Ltd. Vorrichtung zur chemischen Heißdraht-Dampfablagerung
WO2014149962A1 (en) * 2013-03-14 2014-09-25 Applied Materials, Inc. Apparatus for coupling a hot wire source to a process chamber
CN103834930B (zh) * 2013-12-29 2016-06-08 武汉世纪中航超强金刚石膜高科技有限公司 一种内孔涂层金刚石膜的夹具和工艺
US9469918B2 (en) 2014-01-24 2016-10-18 Ii-Vi Incorporated Substrate including a diamond layer and a composite layer of diamond and silicon carbide, and, optionally, silicon
CN114717530A (zh) * 2022-04-15 2022-07-08 北航（四川）西部国际创新港科技有限公司 一种eb-pvd实验工件用样品架及其样品蒸渡方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4721082Y1 (de) * 1967-09-01 1972-07-13
US3922578A (en) * 1974-05-01 1975-11-25 Gte Sylvania Inc Large area cathode
CH621714A5 (de) * 1976-06-08 1981-02-27 Balzers Hochvakuum
US4481232A (en) * 1983-05-27 1984-11-06 The United States Of America As Represented By The Department Of Energy Method and apparatus for producing high purity silicon
GB2143949A (en) * 1983-07-26 1985-02-20 Boc Group Plc Filament support
US4900628A (en) * 1986-07-23 1990-02-13 Sumitomo Electric Industries, Ltd. Gaseous phase synthesized diamond and method for synthesizing same

Also Published As

Publication number Publication date
ATE107365T1 (de) 1994-07-15
US4970986A (en) 1990-11-20
IE901886A1 (en) 1991-02-13
KR910004297A (ko) 1991-03-28
EP0411424B1 (de) 1994-06-15
JPH03120369A (ja) 1991-05-22
DE69009893T2 (de) 1994-11-17
EP0411424A1 (de) 1991-02-06

Similar Documents

Publication Publication Date Title
DE69009893D1 (de) Vorrichtung zur Abscheidung von synthetischem Diamant, die unter Federdruck stehende Drähte enthält.
DE69009915D1 (de) Vorrichtung zur synthetischen Diamantherstellung mit gebogenen Filamenten und Substratkühlungseinrichtung.
KR880003403A (ko) 화학적 기상 성장법과 그장치
DE69105537D1 (de) Polykristallines CVD-Diamantsubstrat für epitaktisches Aufwachsen von Einkristallhalbleitern.
TW325601B (en) Process of manufacturing thin film semiconductor
ATE230445T1 (de) Verfahren und vorrichtung zur ablagerung von parylen af4 auf halbleiterwafern
TW348272B (en) Method and apparatus for depositing planar and highly oriented layers
ATE202805T1 (de) Vorrichtung zur durchführung des gasphaseninfiltrations bzw. - beschichtungsverfahren (cvi/cvd)
HK1075072A1 (en) Apparatus and methods for diamond production
IT8119031A0 (it) Metodo per la produzione di un articolo metallico avente un rivestimento di barriera termica ceramico a cristallo colonnare su substrati lucidati.
ATE438927T1 (de) Prozess zur herstellung von dünnfilmtransistoren
ATE337616T1 (de) Herstellungsverfahren für eine cuinse2-verbindung
FR2497508B1 (fr) Procede de production d'un substrat en ceramique emaillee
DE69010298T2 (de) Niederdruck/Niedertemperatur-Prozess für Deposition von Siliciumdioxyd.
BE899592A (fr) Procede et dispositif de formation d'un revetement de compose metallique sur un substrat chaud en matiere vitreuse.
ATE393840T1 (de) Verfahren zur temperaturgesteuerten dampfabscheidung auf einem substrat
CA2004234A1 (en) Optical fiber production method
EP0240309A3 (en) Method for forming crystal and crystal article obtained by said method
ATE73869T1 (de) Verfahren und vorrichtung zum selektiven chemischen aufdampfen.
ATE279784T1 (de) Verfahren zur bor-dotierung von wafern unter einsatz eines vertikalofensystems
JP2645474B2 (ja) 気相成長装置
JPS55121649A (en) Cvd device
JPH0729830A (ja) 成膜装置
SE9500327D0 (sv) Device for epitaxially growing SiC by CVD
TW429410B (en) Rapid thermal process device with plural sensors for automatic feedback and uniformity of timely adjusting temperature

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee