ATE202805T1 - Vorrichtung zur durchführung des gasphaseninfiltrations bzw. - beschichtungsverfahren (cvi/cvd) - Google Patents

Vorrichtung zur durchführung des gasphaseninfiltrations bzw. - beschichtungsverfahren (cvi/cvd)

Info

Publication number
ATE202805T1
ATE202805T1 AT97119952T AT97119952T ATE202805T1 AT E202805 T1 ATE202805 T1 AT E202805T1 AT 97119952 T AT97119952 T AT 97119952T AT 97119952 T AT97119952 T AT 97119952T AT E202805 T1 ATE202805 T1 AT E202805T1
Authority
AT
Austria
Prior art keywords
cvi
cvd
carrying
gas phase
coating process
Prior art date
Application number
AT97119952T
Other languages
English (en)
Inventor
James W Rudolph
Mark J Purdy
Lowell D Bok
Original Assignee
Goodrich Co B F
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Goodrich Co B F filed Critical Goodrich Co B F
Application granted granted Critical
Publication of ATE202805T1 publication Critical patent/ATE202805T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/71—Ceramic products containing macroscopic reinforcing agents
    • C04B35/78—Ceramic products containing macroscopic reinforcing agents containing non-metallic materials
    • C04B35/80—Fibres, filaments, whiskers, platelets, or the like
    • C04B35/83—Carbon fibres in a carbon matrix
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16D—COUPLINGS FOR TRANSMITTING ROTATION; CLUTCHES; BRAKES
    • F16D69/00—Friction linings; Attachment thereof; Selection of coacting friction substances or surfaces
    • F16D69/02—Composition of linings ; Methods of manufacturing
    • F16D69/023—Composite materials containing carbon and carbon fibres or fibres made of carbonizable material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Composite Materials (AREA)
  • General Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Glass Compositions (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT97119952T 1994-11-16 1995-11-16 Vorrichtung zur durchführung des gasphaseninfiltrations bzw. - beschichtungsverfahren (cvi/cvd) ATE202805T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/340,677 US5480678A (en) 1994-11-16 1994-11-16 Apparatus for use with CVI/CVD processes

Publications (1)

Publication Number Publication Date
ATE202805T1 true ATE202805T1 (de) 2001-07-15

Family

ID=23334475

Family Applications (2)

Application Number Title Priority Date Filing Date
AT97119952T ATE202805T1 (de) 1994-11-16 1995-11-16 Vorrichtung zur durchführung des gasphaseninfiltrations bzw. - beschichtungsverfahren (cvi/cvd)
AT95942504T ATE183552T1 (de) 1994-11-16 1995-11-16 Vorrichtung zur durchführung des gasphaseninfiltrations bzw.- beschichtungsverfahren

Family Applications After (1)

Application Number Title Priority Date Filing Date
AT95942504T ATE183552T1 (de) 1994-11-16 1995-11-16 Vorrichtung zur durchführung des gasphaseninfiltrations bzw.- beschichtungsverfahren

Country Status (13)

Country Link
US (2) US5480678A (de)
EP (2) EP0846787B1 (de)
JP (2) JP3759166B2 (de)
KR (1) KR100389503B1 (de)
CN (2) CN1136335C (de)
AT (2) ATE202805T1 (de)
AU (1) AU4370996A (de)
CA (1) CA2205139C (de)
DE (2) DE69521630T2 (de)
DK (1) DK0792385T3 (de)
ES (1) ES2137561T3 (de)
RU (1) RU2146304C1 (de)
WO (1) WO1996015288A2 (de)

Families Citing this family (116)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3754450B2 (ja) 1994-11-16 2006-03-15 グッドリッチ・コーポレイション 圧力勾配ｃｖｉ／ｃｖｄ法
FR2733254B1 (fr) * 1995-04-18 1997-07-18 Europ Propulsion Procede d'infiltration chimique en phase vapeur pour la densification de substrats poreux disposes en piles annulaires
US5916633A (en) * 1995-05-19 1999-06-29 Georgia Tech Research Corporation Fabrication of carbon/carbon composites by forced flow-thermal gradient chemical vapor infiltration
US5743967A (en) * 1995-07-13 1998-04-28 Semiconductor Energy Laboratory Co. Low pressure CVD apparatus
US5908792A (en) 1995-10-04 1999-06-01 The B. F. Goodrich Company Brake disk having a functional gradient Z-fiber distribution
US6083560A (en) * 1995-11-16 2000-07-04 Alliant Techsystems Inc Process for controlled deposition profile forced flow chemical vapor infiltration
FR2754813B1 (fr) * 1996-10-18 1999-01-15 Europ Propulsion Densification de substrats poreux disposes en piles annulaires par infiltration chimique en phase vapeur a gradient de temperature
DE19646094C2 (de) 1996-11-08 1999-03-18 Sintec Keramik Gmbh Verfahren zur chemischen Gasphaseninfiltration von refraktären Stoffen, insbesondere Kohlenstoff und Siliziumkarbid, sowie Verwendung des Verfahrens
US6161500A (en) * 1997-09-30 2000-12-19 Tokyo Electron Limited Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions
US6062851A (en) * 1998-10-23 2000-05-16 The B. F. Goodrich Company Combination CVI/CVD and heat treat susceptor lid
US6669988B2 (en) 2001-08-20 2003-12-30 Goodrich Corporation Hardware assembly for CVI/CVD processes
US7476419B2 (en) * 1998-10-23 2009-01-13 Goodrich Corporation Method for measurement of weight during a CVI/CVD process
US6440220B1 (en) 1998-10-23 2002-08-27 Goodrich Corporation Method and apparatus for inhibiting infiltration of a reactive gas into porous refractory insulation
US6352430B1 (en) 1998-10-23 2002-03-05 Goodrich Corporation Method and apparatus for cooling a CVI/CVD furnace
US6162298A (en) * 1998-10-28 2000-12-19 The B. F. Goodrich Company Sealed reactant gas inlet for a CVI/CVD furnace
KR20000046418A (ko) * 1998-12-31 2000-07-25 추호석 브레이크 디스크의 제조방법
US6499425B1 (en) * 1999-01-22 2002-12-31 Micron Technology, Inc. Quasi-remote plasma processing method and apparatus
DE60013208T2 (de) 1999-06-04 2005-08-11 Goodrich Corp. Suzeptordeckel sowohl für Gasphaseninfiltration bzw. -Beschichtung als auch Wärmebehandlung
EP1065294B1 (de) 1999-06-04 2003-10-15 Goodrich Corporation Verfahren und Vorrichtung zur Druckmessung in einer CVD/CVI-Kammer
EP1063319B1 (de) 1999-06-04 2005-12-07 Goodrich Corporation Verfahren und Vorrichtung zum Kühlen von einem CVI/CVD-Ofen
US7378362B2 (en) * 2000-09-29 2008-05-27 Goodrich Corporation Boron carbide based ceramic matrix composites
DE60125798T2 (de) 2000-09-29 2007-10-18 Goodrich Corp. Verbundwerkstoffe mit keramischer matrix auf borcarbidbasis
US6878206B2 (en) * 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
FR2821859B1 (fr) * 2001-03-06 2004-05-14 Snecma Moteurs Procede pour la densification par infiltration chimique en phase vapeur de substrats poreux ayant un passage central
US6758909B2 (en) 2001-06-05 2004-07-06 Honeywell International Inc. Gas port sealing for CVD/CVI furnace hearth plates
KR100400044B1 (ko) * 2001-07-16 2003-09-29 삼성전자주식회사 간격 조절 장치를 가지는 웨이퍼 처리 장치의 샤워 헤드
US6793966B2 (en) * 2001-09-10 2004-09-21 Howmet Research Corporation Chemical vapor deposition apparatus and method
US7017514B1 (en) * 2001-12-03 2006-03-28 Novellus Systems, Inc. Method and apparatus for plasma optimization in water processing
US6953605B2 (en) * 2001-12-26 2005-10-11 Messier-Bugatti Method for densifying porous substrates by chemical vapour infiltration with preheated gas
US20040250763A1 (en) * 2002-01-11 2004-12-16 Ovshinsky Stanford R. Fountain cathode for large area plasma deposition
FR2834713B1 (fr) 2002-01-15 2004-04-02 Snecma Moteurs Procede et installation pour la densification de substrats par infiltration chimique en phase vapeur
US6572371B1 (en) 2002-05-06 2003-06-03 Messier-Bugatti Gas preheater and process for controlling distribution of preheated reactive gas in a CVI furnace for densification of porous annular substrates
JP4338355B2 (ja) * 2002-05-10 2009-10-07 東京エレクトロン株式会社 プラズマ処理装置
US6657905B1 (en) * 2002-05-17 2003-12-02 Micron Technology, Inc. Clamping circuit for the Vpop voltage used to program antifuses
US20050121143A1 (en) * 2002-05-23 2005-06-09 Lam Research Corporation Pump baffle and screen to improve etch uniformity
FR2842193B1 (fr) * 2002-07-12 2004-10-01 Messier Bugatti Procede et installation pour le traitement thermique a haute temperature et la densification par infiltration chimique en phase vapeur de textures en carbone
EP1452624B1 (de) * 2002-10-24 2008-06-11 Goodrich Corporation Verfahren und Vorrichtung zur stückweisen und zur kontinuierlichen Verdichtung durch chemische Dampfphaseninfitration (CVI)
UA84862C2 (en) * 2003-03-03 2008-12-10 Месье-Бугатти Substrate
US7335397B2 (en) * 2004-02-16 2008-02-26 Goodrich Corporation Pressure gradient CVI/CVD apparatus and method
US20060029804A1 (en) * 2004-08-03 2006-02-09 Klett James W Continuous flow closed-loop rapid liquid-phase densification of a graphitizable carbon-carbon composite
US7332195B2 (en) * 2004-08-26 2008-02-19 Honeywell International Inc. Chemical vapor deposition method
US20060054090A1 (en) * 2004-09-15 2006-03-16 Applied Materials, Inc. PECVD susceptor support construction
US20060054758A1 (en) * 2004-09-16 2006-03-16 Simpson Allen H Fixture for holding a preform during a heating process
US7572340B2 (en) * 2004-11-29 2009-08-11 Applied Materials, Inc. High resolution substrate holder leveling device and method
FR2882064B1 (fr) * 2005-02-17 2007-05-11 Snecma Propulsion Solide Sa Procede de densification de substrats poreux minces par infiltration chimique en phase vapeur et dispositif de chargement de tels substrats
US20060194059A1 (en) * 2005-02-25 2006-08-31 Honeywell International Inc. Annular furnace spacers and method of using same
US20060194060A1 (en) * 2005-02-25 2006-08-31 Honeywell International Furnace spacers for spacing preforms in a furnace
US20060254162A1 (en) * 2005-04-21 2006-11-16 Deslauriers, Inc. Shim having through openings
US7691443B2 (en) * 2005-05-31 2010-04-06 Goodrich Corporation Non-pressure gradient single cycle CVI/CVD apparatus and method
US7442443B2 (en) 2005-05-31 2008-10-28 Goodrich Corporation Chromium-nickel stainless steel alloy article having oxide coating formed from the base metal suitable for brake apparatus
US8057855B1 (en) 2005-05-31 2011-11-15 Goodrich Corporation Non-pressure gradient single cycle CVI/CVD apparatus and method
US20070014990A1 (en) * 2005-07-14 2007-01-18 Honeywell International Inc. Support structure for radiative heat transfer
KR100792396B1 (ko) * 2005-10-11 2008-01-08 주식회사 유진테크 파티션 구조형 가열유닛과 이를 이용한 히팅장치
US8673188B2 (en) * 2006-02-14 2014-03-18 Goodrich Corporation Carbon-carbon parts and methods for making same
US7811085B2 (en) * 2006-05-04 2010-10-12 Honeywell International Inc. Gas preheater for chemical vapor processing furnace
US20070269597A1 (en) * 2006-05-17 2007-11-22 Honeywell International Inc. Modified CVD cooling loop
US7771194B2 (en) * 2006-05-26 2010-08-10 Honeywell International Inc. Gas preheater for chemical vapor processing furnace having circuitous passages
WO2008017382A2 (de) * 2006-08-07 2008-02-14 Behr Gmbh & Co. Kg Verfahren zum herstellen von bauteilen in einem mediumkreislauf, wie insbesondere eines wärmeübertragers und solche bauteile
FR2919309B1 (fr) * 2007-07-25 2011-07-22 Commissariat Energie Atomique Procede et dispositif d'infiltration d'une structure en materiau poreux par depot chimique en phase vapeur.
US8105649B1 (en) 2007-08-09 2012-01-31 Imaging Systems Technology Fabrication of silicon carbide shell
JP5208128B2 (ja) * 2007-12-04 2013-06-12 フルテック株式会社 加圧ガスパルス制御処理方法及び加圧ガスパルス制御処理装置
US8132442B2 (en) * 2008-09-22 2012-03-13 Siemens Energy, Inc. Compressible ceramic seal
JP5863457B2 (ja) * 2008-11-28 2016-02-16 プロブスト、フォルカー 平坦基板にセレン、硫黄元素処理で半導体層と被覆基板を製造する方法
US8293013B2 (en) * 2008-12-30 2012-10-23 Intermolecular, Inc. Dual path gas distribution device
KR200475462Y1 (ko) * 2009-03-27 2014-12-03 램 리써치 코포레이션 플라즈마 처리 장치의 교체 가능한 상부 챔버 섹션
US10655219B1 (en) * 2009-04-14 2020-05-19 Goodrich Corporation Containment structure for creating composite structures
US10689753B1 (en) * 2009-04-21 2020-06-23 Goodrich Corporation System having a cooling element for densifying a substrate
KR200478069Y1 (ko) 2009-09-10 2015-08-24 램 리써치 코포레이션 플라즈마 처리 장치의 교체가능한 상부 체임버 부품
US20110064891A1 (en) * 2009-09-16 2011-03-17 Honeywell International Inc. Methods of rapidly densifying complex-shaped, asymmetrical porous structures
US9449859B2 (en) * 2009-10-09 2016-09-20 Applied Materials, Inc. Multi-gas centrally cooled showerhead design
CN101831623B (zh) * 2010-05-28 2011-12-07 湖南金博复合材料科技有限公司 化学气相增密炉炉膛
US20120052189A1 (en) * 2010-08-30 2012-03-01 Litian Liu Vapor deposition system
JP2012195565A (ja) * 2011-02-28 2012-10-11 Hitachi Kokusai Electric Inc 基板処理装置、基板処理方法及び半導体装置の製造方法
US20130052806A1 (en) * 2011-08-22 2013-02-28 Soitec Deposition systems having access gates at desirable locations, and related methods
US9644285B2 (en) 2011-08-22 2017-05-09 Soitec Direct liquid injection for halide vapor phase epitaxy systems and methods
TWI505400B (zh) * 2011-08-26 2015-10-21 Lg Siltron Inc 基座
FR2980486B1 (fr) * 2011-09-28 2013-10-11 Snecma Propulsion Solide Dispositif de chargement pour la densification par infiltration chimique en phase vapeur en flux dirige de substrats poreux de forme tridimensionnelle
CN102363878B (zh) * 2011-11-10 2014-09-10 西安航空制动科技有限公司 一种化学气相沉积炉预热装置
DE102012100176B4 (de) * 2012-01-10 2016-11-17 Cvt Gmbh & Co. Kg Verfahren zur chemischen Gasphaseninfiltration von wenigstens einem refraktären Stoff
FR2993044B1 (fr) * 2012-07-04 2014-08-08 Herakles Dispositif de chargement et installation pour la densification de preformes poreuses tronconiques et empilables
FR2993555B1 (fr) 2012-07-19 2015-02-20 Herakles Installation d'infiltration chimique en phase vapeur a haute capacite de chargement
US11326255B2 (en) * 2013-02-07 2022-05-10 Uchicago Argonne, Llc ALD reactor for coating porous substrates
US10107506B2 (en) * 2013-04-03 2018-10-23 Trane International Inc. Heat exchanger with differentiated resistance flowpaths
US9964333B2 (en) 2013-05-28 2018-05-08 Trane International Inc. System and method for furnace fluid flow management
FR3007511B1 (fr) * 2013-06-19 2017-09-08 Herakles Installation pour traitements thermiques de produits en materiau composite comprenant des moyens de mesure de temperature delocalises
US9605345B2 (en) * 2013-08-23 2017-03-28 Taiwan Semiconductor Manufacturing Co., Ltd. Vertical furnace for improving wafer uniformity
KR102162366B1 (ko) * 2014-01-21 2020-10-06 우범제 퓸 제거 장치
FR3018526B1 (fr) * 2014-03-14 2021-06-11 Herakles Installation de densification cvi comprenant une zone de prechauffage a forte capacite
US9964332B2 (en) * 2014-03-27 2018-05-08 Lam Research Corporation Systems and methods for bulk vaporization of precursor
CN104034159B (zh) * 2014-06-06 2016-01-20 西安航空制动科技有限公司 一种c/c复合材料沉积炉
TWI624554B (zh) * 2015-08-21 2018-05-21 弗里松股份有限公司 蒸發源
MY190445A (en) 2015-08-21 2022-04-21 Flisom Ag Homogeneous linear evaporation source
US9963779B2 (en) 2016-02-29 2018-05-08 Goodrich Corporation Methods for modifying pressure differential in a chemical vapor process
US10407769B2 (en) * 2016-03-18 2019-09-10 Goodrich Corporation Method and apparatus for decreasing the radial temperature gradient in CVI/CVD furnaces
EP3527691A4 (de) * 2016-10-14 2020-06-24 IHI Corporation Wiedererwärmungssammelvorrichtung für gasphasenprozess
RU2665860C2 (ru) * 2016-11-30 2018-09-04 Вячеслав Максимович Бушуев Способ металлирования крупногабаритных заготовок в реакторе установки для объемного металлирования, конструкция реактора и способ его изготовления
FR3059679B1 (fr) * 2016-12-07 2021-03-12 Safran Ceram Outillage de conformation et installation pour l'infiltration chimique en phase gazeuse de preformes fibreuses
RU2665646C2 (ru) * 2016-12-26 2018-09-03 Вячеслав Максимович Бушуев Футеровка корпуса реактора установок для металлирования заготовок
CN108680009A (zh) * 2018-05-07 2018-10-19 西安航空制动科技有限公司 一种碳/碳复合材料的防氧化涂层热处理设备及方法
KR102576220B1 (ko) * 2018-06-22 2023-09-07 삼성디스플레이 주식회사 박막 처리 장치 및 박막 처리 방법
FR3084672B1 (fr) * 2018-08-03 2020-10-16 Safran Ceram Procede de densification par infiltration chimique en phase gazeuse de substrats annulaires poreux
CN109279908B (zh) * 2018-10-30 2021-06-01 中南大学 一种制备超薄碳/碳复合材料面板的夹具
EP3647459A1 (de) 2018-10-31 2020-05-06 Petroceramics S.p.A. Verfahren und anordnung durch chemische gasphaseninfiltration von porösen komponenten
IT201800009953A1 (it) 2018-10-31 2020-05-01 Petroceramics Spa Metodo ed un assieme di infiltrazione e la deposizione rapida da fase vapore di componenti porosi
CN113227438B (zh) * 2018-11-30 2023-07-11 磁性流体技术（美国）公司 用于电子束源涂覆的坩埚盖
US11111578B1 (en) 2020-02-13 2021-09-07 Uchicago Argonne, Llc Atomic layer deposition of fluoride thin films
US11691924B2 (en) 2020-02-21 2023-07-04 Raytheon Technologies Corporation CVI matrix densification process
CN111235548B (zh) * 2020-03-12 2024-09-24 清华大学 一种基于cvd/cvi双工艺的纤维增强复合材料沉积炉
CN113248272B (zh) * 2021-05-11 2022-06-21 广州三的投资管理企业（有限合伙） 一种碳陶摩擦材料的制备方法和应用
US12065738B2 (en) 2021-10-22 2024-08-20 Uchicago Argonne, Llc Method of making thin films of sodium fluorides and their derivatives by ALD
US12078417B1 (en) 2021-12-29 2024-09-03 Rolls-Royce High Temperature Composites, Inc. Load assemblies for loading parts in a furnace
US11932941B1 (en) 2021-12-29 2024-03-19 Rolls-Royce High Temperature Composites, Inc. Load assemblies for loading parts in a furnace
US12000046B1 (en) * 2021-12-29 2024-06-04 Rolls-Royce High Temperature Composites, Inc. Load assemblies for loading parts in a furnace
US11901169B2 (en) 2022-02-14 2024-02-13 Uchicago Argonne, Llc Barrier coatings
CN115094402B (zh) * 2022-06-24 2023-04-11 清华大学 一种立式双温区-双通道化学气相沉积设备
US11993548B2 (en) 2022-09-30 2024-05-28 Rtx Corporation Minimization of chemical vapor infiltration tooling hole length through windows

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3991248A (en) * 1972-03-28 1976-11-09 Ducommun Incorporated Fiber reinforced composite product
US3895084A (en) * 1972-03-28 1975-07-15 Ducommun Inc Fiber reinforced composite product
GB1586959A (en) * 1976-08-11 1981-03-25 Dunlop Ltd Method and apparatus for the production of carbon/carbon composite material
US4580524A (en) * 1984-09-07 1986-04-08 The United States Of America As Represented By The United States Department Of Energy Process for the preparation of fiber-reinforced ceramic composites by chemical vapor deposition
US4590042A (en) * 1984-12-24 1986-05-20 Tegal Corporation Plasma reactor having slotted manifold
US4612077A (en) * 1985-07-29 1986-09-16 The Perkin-Elmer Corporation Electrode for plasma etching system
JPS63295476A (ja) * 1987-05-28 1988-12-01 Nippon Steel Corp 炭素繊維強化炭素材料の製造方法
US4895108A (en) * 1988-06-22 1990-01-23 The Babcock & Wilcox Company CVD apparatus and process for the preparation of fiber-reinforced ceramic composites
JPH0273624A (ja) * 1988-09-08 1990-03-13 Fujitsu Ltd Ｃｖｄ用ガス導入装置
JPH0373527A (ja) * 1989-08-14 1991-03-28 Fujitsu Ltd 化学気相成長装置
JP2849606B2 (ja) * 1990-08-29 1999-01-20 京セラ株式会社 気相含浸法およびその装置
FR2671797B1 (fr) * 1991-01-18 1994-02-25 Propulsion Ste Europeenne Procede de densification d'un substrat poreux par une matrice contenant du carbone.
US5362228A (en) * 1991-11-04 1994-11-08 Societe Europeenne De Propulsion Apparatus for preheating a flow of gas in an installation for chemical vapor infiltration, and a densification method using the apparatus
US5447568A (en) * 1991-12-26 1995-09-05 Canon Kabushiki Kaisha Chemical vapor deposition method and apparatus making use of liquid starting material
US5389152A (en) * 1992-10-09 1995-02-14 Avco Corporation Apparatus for densification of porous billets
US5348774A (en) * 1993-08-11 1994-09-20 Alliedsignal Inc. Method of rapidly densifying a porous structure
JP3468859B2 (ja) * 1994-08-16 2003-11-17 富士通株式会社 気相処理装置及び気相処理方法

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ES2137561T3 (es) 1999-12-16
DE69521630D1 (de) 2001-08-09
KR970707318A (ko) 1997-12-01
EP0846787B1 (de) 2001-07-04
EP0846787A1 (de) 1998-06-10
US6109209A (en) 2000-08-29
CN1136335C (zh) 2004-01-28
DE69511573D1 (de) 1999-09-23
DE69521630T2 (de) 2002-05-16
CA2205139A1 (en) 1996-05-23
KR100389503B1 (ko) 2003-10-30
AU4370996A (en) 1996-06-06
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RU2146304C1 (ru) 2000-03-10
WO1996015288A3 (en) 1996-08-08
CN1528949A (zh) 2004-09-15
CN1170442A (zh) 1998-01-14
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ATE183552T1 (de) 1999-09-15
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US5480678A (en) 1996-01-02
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