ATE337616T1 - Herstellungsverfahren für eine cuinse2-verbindung - Google Patents

Herstellungsverfahren für eine cuinse2-verbindung

Info

Publication number
ATE337616T1
ATE337616T1 AT94916362T AT94916362T ATE337616T1 AT E337616 T1 ATE337616 T1 AT E337616T1 AT 94916362 T AT94916362 T AT 94916362T AT 94916362 T AT94916362 T AT 94916362T AT E337616 T1 ATE337616 T1 AT E337616T1
Authority
AT
Austria
Prior art keywords
pct
cuinse2
compound
production process
sec
Prior art date
Application number
AT94916362T
Other languages
English (en)
Inventor
Francois Gremion
Jean-Paul Issartel
Klaus Mueller
Original Assignee
Yazaki Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yazaki Corp filed Critical Yazaki Corp
Application granted granted Critical
Publication of ATE337616T1 publication Critical patent/ATE337616T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Electrolytic Production Of Metals (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Photovoltaic Devices (AREA)
AT94916362T 1993-06-08 1994-06-07 Herstellungsverfahren für eine cuinse2-verbindung ATE337616T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH01722/93A CH687112A5 (fr) 1993-06-08 1993-06-08 Procédé pour déposer un précurseur du composé CuInSe(2).

Publications (1)

Publication Number Publication Date
ATE337616T1 true ATE337616T1 (de) 2006-09-15

Family

ID=4217077

Family Applications (1)

Application Number Title Priority Date Filing Date
AT94916362T ATE337616T1 (de) 1993-06-08 1994-06-07 Herstellungsverfahren für eine cuinse2-verbindung

Country Status (7)

Country Link
US (1) US5501786A (de)
EP (1) EP0658276B1 (de)
JP (1) JP3114997B2 (de)
AT (1) ATE337616T1 (de)
CH (1) CH687112A5 (de)
DE (1) DE69434829T2 (de)
WO (1) WO1994029904A1 (de)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2806469B2 (ja) * 1993-09-16 1998-09-30 矢崎総業株式会社 太陽電池吸収層の製造方法
JP3025550U (ja) * 1995-12-07 1996-06-21 尚武 後藤 火消し付き灰皿
US5985691A (en) * 1997-05-16 1999-11-16 International Solar Electric Technology, Inc. Method of making compound semiconductor films and making related electronic devices
US6268014B1 (en) * 1997-10-02 2001-07-31 Chris Eberspacher Method for forming solar cell materials from particulars
JP4443645B2 (ja) * 1998-05-07 2010-03-31 本田技研工業株式会社 Ｃｂｄ成膜装置
AT408351B (de) * 2000-05-17 2001-11-26 Miba Gleitlager Ag Verfahren zum galvanischen abscheiden einer dispersionsschicht auf einer oberfläche eines werkstückes
JP3876440B2 (ja) * 2002-02-14 2007-01-31 本田技研工業株式会社 光吸収層の作製方法
US8623448B2 (en) * 2004-02-19 2014-01-07 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from chalcogenide microflake particles
US7306823B2 (en) 2004-09-18 2007-12-11 Nanosolar, Inc. Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells
US8372734B2 (en) * 2004-02-19 2013-02-12 Nanosolar, Inc High-throughput printing of semiconductor precursor layer from chalcogenide nanoflake particles
US8329501B1 (en) 2004-02-19 2012-12-11 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from inter-metallic microflake particles
US8309163B2 (en) * 2004-02-19 2012-11-13 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor and inter-metallic material
US7736940B2 (en) * 2004-03-15 2010-06-15 Solopower, Inc. Technique and apparatus for depositing layers of semiconductors for solar cell and module fabrication
WO2005089330A2 (en) * 2004-03-15 2005-09-29 Solopower, Inc. Technique and apparatus for depositing thin layers of semiconductors for solar cell fabricaton
US7582506B2 (en) * 2005-03-15 2009-09-01 Solopower, Inc. Precursor containing copper indium and gallium for selenide (sulfide) compound formation
US20070093006A1 (en) * 2005-10-24 2007-04-26 Basol Bulent M Technique For Preparing Precursor Films And Compound Layers For Thin Film Solar Cell Fabrication And Apparatus Corresponding Thereto
US7713773B2 (en) * 2005-11-02 2010-05-11 Solopower, Inc. Contact layers for thin film solar cells employing group IBIIIAVIA compound absorbers
US7507321B2 (en) * 2006-01-06 2009-03-24 Solopower, Inc. Efficient gallium thin film electroplating methods and chemistries
US20070227633A1 (en) * 2006-04-04 2007-10-04 Basol Bulent M Composition control for roll-to-roll processed photovoltaic films
CN101454486B (zh) 2006-04-04 2013-03-13 索罗能源公司 用于卷绕处理光电薄膜的组分控制
US20080023059A1 (en) * 2006-07-25 2008-01-31 Basol Bulent M Tandem solar cell structures and methods of manufacturing same
US7892413B2 (en) * 2006-09-27 2011-02-22 Solopower, Inc. Electroplating methods and chemistries for deposition of copper-indium-gallium containing thin films
US20080175993A1 (en) * 2006-10-13 2008-07-24 Jalal Ashjaee Reel-to-reel reaction of a precursor film to form solar cell absorber
US20090183675A1 (en) * 2006-10-13 2009-07-23 Mustafa Pinarbasi Reactor to form solar cell absorbers
US20100139557A1 (en) * 2006-10-13 2010-06-10 Solopower, Inc. Reactor to form solar cell absorbers in roll-to-roll fashion
US8425753B2 (en) * 2008-05-19 2013-04-23 Solopower, Inc. Electroplating methods and chemistries for deposition of copper-indium-gallium containing thin films
US8003070B2 (en) * 2008-03-13 2011-08-23 Battelle Energy Alliance, Llc Methods for forming particles from single source precursors
US8324414B2 (en) 2009-12-23 2012-12-04 Battelle Energy Alliance, Llc Methods of forming single source precursors, methods of forming polymeric single source precursors, and single source precursors and intermediate products formed by such methods
US9371226B2 (en) 2011-02-02 2016-06-21 Battelle Energy Alliance, Llc Methods for forming particles
US8951446B2 (en) 2008-03-13 2015-02-10 Battelle Energy Alliance, Llc Hybrid particles and associated methods
US20100226629A1 (en) * 2008-07-21 2010-09-09 Solopower, Inc. Roll-to-roll processing and tools for thin film solar cell manufacturing
EP2435248A2 (de) 2009-05-26 2012-04-04 Purdue Research Foundation Dünnfilme für photovoltaikzellen
TWI520367B (zh) * 2010-02-09 2016-02-01 陶氏全球科技公司 具透明導電阻擋層之光伏打裝置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4581108A (en) * 1984-01-06 1986-04-08 Atlantic Richfield Company Process of forming a compound semiconductive material
DE4103291A1 (de) * 1990-09-22 1992-04-02 Battelle Institut E V Verfahren zur herstellung einer absorberschicht fuer solarzellen mit hilfe galvanischer abscheidetechnik
FR2668299A1 (fr) * 1990-10-23 1992-04-24 Centre Nat Rech Scient Procede de preparation de couches d'alliage cuivre-indium, et cellules photovoltauiques obtenues par sa mise en óoeuvre.

Also Published As

Publication number Publication date
EP0658276A1 (de) 1995-06-21
DE69434829T2 (de) 2007-08-16
JP3114997B2 (ja) 2000-12-04
WO1994029904A1 (fr) 1994-12-22
CH687112A5 (fr) 1996-09-13
DE69434829D1 (de) 2006-10-05
JPH08509102A (ja) 1996-09-24
EP0658276B1 (de) 2006-08-23
US5501786A (en) 1996-03-26

Similar Documents

Publication Publication Date Title
ATE337616T1 (de) Herstellungsverfahren für eine cuinse2-verbindung
DE69425328D1 (de) Kristalline mehrschichtige struktur und verfahren zu ihrer herstellung
DK0699207T3 (da) Mellemprodukt til azithromycin
KR960026994A (ko) 에피텍셜웨이퍼 및 그 제조방법
CA2248953A1 (en) Novel benzofuranone derivatives and process for producing the same
AR028571A1 (es) Proceso para preparar compuestos de acido iminodiacético a partir de sustratos de monoetanolamina
TW351770B (en) Shield layer, method for forming shield layer and producing substrate
MX9301850A (es) Procedimiento para producir un tinte monoazo
CA2326536A1 (en) Process for producing hinokitiol
FR2707673B1 (fr) Procédé de métallisation de substrats non-conducteurs.
GR3021686T3 (en) METHOD OF PREPARING -g(b)-CARBOLINES.
AU647795B2 (en) Method for preparing 1,1-dichloro-1-fluoroethane
HK1019620A1 (en) A process for the biotransformation of colchicinoid compounds into the corresponding 3-glycosyl derivatives
WO1995021145A3 (en) FERMENTATION PRODUCTION OF LONG CHAIN α,φ-DICARBOXYLIC ACIDS FROM ALKANES BY USE OF A MICROORGANISM
CA2104488A1 (en) High Yield Sodium Hydrosulfite Generation
TW337610B (en) Structure with reduced stress between a spin-on-glass layer and a metal layer and process for producing the same
AU6726998A (en) Method for producing 5-aminomethyl-2-chloropyridines
DE69412090T2 (de) Herstellung von fluoro-nukleosiden und dafür geeignete zwischenprodukte
AU7628596A (en) Novel method for making palatinitol
EP0373668A3 (de) Verfahren zur Herstellung von ortho-methylierten hydroxyaromatischen Verbindungen
AU9147291A (en) Printable ribbed coated sheet and process for producing same
TW345704B (en) Process for producing metal plug
WO2004031439A3 (de) Verfahren und prozessreaktor zur sequentiellen gasphasenabscheidung
DE69620170T2 (de) Herstellung von hydroxyverbindungen durch biokonversion mit dioxygenase
TW326043B (en) Method for preparing coumarin and derivatives thereof

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties