JPS55121649A - Cvd device - Google Patents

Cvd device

Info

Publication number
JPS55121649A
JPS55121649A JP2961879A JP2961879A JPS55121649A JP S55121649 A JPS55121649 A JP S55121649A JP 2961879 A JP2961879 A JP 2961879A JP 2961879 A JP2961879 A JP 2961879A JP S55121649 A JPS55121649 A JP S55121649A
Authority
JP
Japan
Prior art keywords
substrate
susceptor
temperature
retaining
cvd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2961879A
Other languages
Japanese (ja)
Inventor
Sumio Imaoka
Yoshiki Tanigawa
Yoshitaka Tawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP2961879A priority Critical patent/JPS55121649A/en
Publication of JPS55121649A publication Critical patent/JPS55121649A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To equalize the thickness of CVD films of a CVD device having a susceptor with a heater for retaining a semiconductor substrate and a stock gas supply nozzle by retaining the temperature on the surface of the substrate the same as the temperature of the upper surface except the substrate retaining surface of the susceptor. CONSTITUTION:A plurality of substrate retaining surfaces 3 for placing substrates 2 such as silicon wafers are formed on the upper surface of a susceptor 1 made of material having large thermal conductivity such as aluminum or the like. A heater 4 is provided underneath the susceptor 1 to heat the substrate through the susceptor 1. A coating 5 having low thermal conductivity such as Al2O3 or the like is formed on the portion except the substrate retaining surface on the upper surface of the susceptor to lower the temperature on the surface of the portion so as to eliminate the temperature difference between the surface of the substrate 2 and the surface of the coating 5. Thus, the temperature of the surface portion becomes uniform to equalize the density of the stock gas. Accordingly, it can form the CVD film such as SiO2 film or the like having equal thickness on all the surface portions on the surface of the substrate.
JP2961879A 1979-03-14 1979-03-14 Cvd device Pending JPS55121649A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2961879A JPS55121649A (en) 1979-03-14 1979-03-14 Cvd device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2961879A JPS55121649A (en) 1979-03-14 1979-03-14 Cvd device

Publications (1)

Publication Number Publication Date
JPS55121649A true JPS55121649A (en) 1980-09-18

Family

ID=12281062

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2961879A Pending JPS55121649A (en) 1979-03-14 1979-03-14 Cvd device

Country Status (1)

Country Link
JP (1) JPS55121649A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5848915A (en) * 1981-09-18 1983-03-23 Hitachi Ltd Semiconductor device manufacturing apparatus
JPS60220929A (en) * 1985-03-27 1985-11-05 Hitachi Ltd Plasma cvd apparatus

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5271171A (en) * 1975-12-10 1977-06-14 Matsushita Electronics Corp Production of epitaxial wafer
JPS52146174A (en) * 1976-05-29 1977-12-05 Toshiba Corp Susceptor for vapor growth of semiconductor
JPS562370A (en) * 1979-06-19 1981-01-12 Mitsubishi Electric Corp Nematic liquid crystal composition

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5271171A (en) * 1975-12-10 1977-06-14 Matsushita Electronics Corp Production of epitaxial wafer
JPS52146174A (en) * 1976-05-29 1977-12-05 Toshiba Corp Susceptor for vapor growth of semiconductor
JPS562370A (en) * 1979-06-19 1981-01-12 Mitsubishi Electric Corp Nematic liquid crystal composition

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5848915A (en) * 1981-09-18 1983-03-23 Hitachi Ltd Semiconductor device manufacturing apparatus
JPS60220929A (en) * 1985-03-27 1985-11-05 Hitachi Ltd Plasma cvd apparatus
JPH0544822B2 (en) * 1985-03-27 1993-07-07 Hitachi Ltd

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