JPS60126821A - Sample heating device, normal pressure cvd device and vacuum cvd device - Google Patents
Sample heating device, normal pressure cvd device and vacuum cvd deviceInfo
- Publication number
- JPS60126821A JPS60126821A JP23528783A JP23528783A JPS60126821A JP S60126821 A JPS60126821 A JP S60126821A JP 23528783 A JP23528783 A JP 23528783A JP 23528783 A JP23528783 A JP 23528783A JP S60126821 A JPS60126821 A JP S60126821A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- optical fiber
- heating device
- infrared light
- sample heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕本発明は半導体基板にシリコン薄膜を蒸
着する場合等に使用する試料加熱装置並びに該試料加熱
装置を備えた常圧ＯＶＤ装置および減圧ＯＶＤ装置に関
するものである。なお、ＯＶＤはＣｈｅｍｉｃａｌ ｖ
ａｐｏｗｒ Ｄｅｐｏｓｉｔｉｏｎの頭文字である。Ｏ
ＶＤ装置は密閉容器内において試料を加熱し、形成され
る薄Ｍ管組成元素を含む化合物ガスを供給し、試料の表
面から発生する熱エネルギーによって前記化合物ガスを
分解して試料の表面に薄膜を形成させる装置であって、
常圧で行なう場合と、減圧、又は真空で行なう場合とが
ある。ＣＶＤ装置によって形成さハる薄膜の良否Ｕ膜質
および膜厚分布の均一性によっで定するので良質の薄膜
をうるためには供給されるガスの分布、試料の温度およ
び加熱の分布等を十分に監視制御する必要がある。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] The present invention relates to a sample heating device used for depositing a silicon thin film onto a semiconductor substrate, and an atmospheric pressure OVD device and a reduced pressure OVD device equipped with the sample heating device. be. In addition, OVD is Chemical v
It is an acronym for ``apowr Deposition''. O
The VD device heats a sample in a sealed container, supplies a compound gas containing the constituent elements of the thin M tube to be formed, and decomposes the compound gas using thermal energy generated from the surface of the sample to form a thin film on the surface of the sample. An apparatus for forming
There are cases where it is carried out at normal pressure and cases where it is carried out at reduced pressure or vacuum. The quality of the thin film formed by the CVD device is determined by the film quality and the uniformity of the film thickness distribution, so in order to obtain a good quality thin film, the distribution of the gas supplied, the temperature of the sample, the distribution of heating, etc. must be carefully controlled. need to be monitored and controlled.
従来の試料加熱装置およびＣＶＤ装置を第１図、第２図
および第６図について説明する。第１図（試料加熱装＆
）において、１は加熱される試料、２はヒータ６を内蔵
する試料台、４はヒータ６の電源である。第２図は第１
図の試料加熱装置を備えた常圧ＣＶＤ装置で、５は密閉
容器、６Ｖｉ密閉容器５に薄膜を形成する組成元素を含
む化合物ガスを供給する供給口である。第３図は第１図
の試料加熱装置を備えた減圧ＣＶＤ装置で、第２図の密
閉容器５にＸ窒ポンプ７に連結される排気口８を設けた
構造を有する。A conventional sample heating apparatus and CVD apparatus will be explained with reference to FIGS. 1, 2, and 6. Figure 1 (sample heating device &
), 1 is a sample to be heated, 2 is a sample stage with a built-in heater 6, and 4 is a power source for the heater 6. Figure 2 is the first
In the atmospheric pressure CVD apparatus equipped with the sample heating device shown in the figure, reference numeral 5 denotes a closed container and a supply port for supplying a compound gas containing constituent elements to form a thin film into the 6Vi closed container 5. FIG. 3 shows a reduced pressure CVD apparatus equipped with the sample heating device shown in FIG. 1, and has a structure in which the closed container 5 shown in FIG. 2 is provided with an exhaust port 8 connected to the X-nitrogen pump 7.
ところで上記第１図の試料加熱装置は、試料１の表面温
度の制御が困難である。特に、表面温度を均一に昇温さ
せ、あるいは表面温度に温度勾配を形成するよう温度制
御することが困難である。これは装置の構造を基く必然
的な欠点でろって、試料１の表面温度の制御が製品の品
質に大きく影響する第２図の常圧ＣＶＤ装置および第６
図の減圧ＣＶＤ装置においては看過するととのできない
重要な問題である。本発明は上記のような欠点のない試
料加熱装置並びにと名を備えた常圧ＣＶＤ装置および減
圧ＣＶＤ装置を提供することを目的とするものである。However, in the sample heating apparatus shown in FIG. 1, it is difficult to control the surface temperature of the sample 1. In particular, it is difficult to control the temperature so that the surface temperature is raised uniformly or a temperature gradient is formed in the surface temperature. This is an inevitable drawback based on the structure of the apparatus, and the atmospheric pressure CVD apparatus shown in Fig. 2 and the
This is an important problem that cannot be overlooked in the reduced pressure CVD apparatus shown in the figure. The object of the present invention is to provide a sample heating apparatus, an atmospheric pressure CVD apparatus, and a reduced pressure CVD apparatus having the above-mentioned names.
〔発明の構成〕本発明の試料加熱装置は加熱される試料
を載置する試料台に複数個の窓孔を設け、該窓孔に光フ
ァイバーの先端をそれぞれ挿入し、該光ファイバーの後
端には供給量を任意を制御することのできる赤外光の光
源を設けたことを特徴とするものであシ、本発明の常圧
ＣＶＤ装置は、試料の表面に形成される薄膜元素を含む
化合物ガスを供給する供給口を備えた密閉容器内に前記
試料加熱装置を設けたものであり、本発明の減圧ＣＶＤ
装置は前記化合物ガスの供給口と、真空ポンプに連結さ
れる排気口とを備えた密閉容器内に前記試料加熱装置を
設けた構成を有する。[Structure of the Invention] The sample heating device of the present invention has a plurality of window holes in the sample stage on which the sample to be heated is placed, the tips of optical fibers are inserted into each of the window holes, and the rear end of the optical fiber is provided with a plurality of window holes. The atmospheric pressure CVD apparatus of the present invention is characterized by being equipped with an infrared light source whose supply amount can be arbitrarily controlled. The sample heating device is provided in a closed container equipped with a supply port for supplying the low pressure CVD of the present invention.
The apparatus has a configuration in which the sample heating device is provided in a closed container equipped with a supply port for the compound gas and an exhaust port connected to a vacuum pump.
〔実施例〕第４図は本発明の試料加熱装置の実施例であ
る。１１は加熱される試料（例・シリコン板）１２を載
置する透明な石英プレートより寿る載置板１６を俯えた
試料台で、複数個の窓孔１４を崩し、略窓孔１４にはそ
れそハ光ファイバー１５の先端が挿入されている。１６
は光ファイバー１５の後端に設けた赤外光の光源である
。上記の構成において複数個の光源１６から元ファイバ
ー１５を通して供給される赤外光を制御すると試料１２
の加熱を部分的々いしは全体的に制御することが可能で
ある。[Embodiment] FIG. 4 shows an embodiment of the sample heating device of the present invention. Reference numeral 11 denotes a sample stand that looks down on a mounting plate 16 that is longer than a transparent quartz plate on which a heated sample (e.g. silicon plate) 12 is placed. The tip of the optical fiber 15 is inserted therein. 16
is an infrared light source provided at the rear end of the optical fiber 15. In the above configuration, when the infrared light supplied from the plurality of light sources 16 through the original fiber 15 is controlled, the sample 12
It is possible to control the heating locally or completely.
第５図は第４図に試料加熱装置を密閉容器１７の内部に
設けた本発明の常圧ＣＶＤ装置の実施例で、１８は形成
される薄膜の組成元素を含む化合物ガスの供給口でるる
。化合物ガスがモノシラン（ＳＺＨ４）、アンモニア（
ｌＪＨｊ ）、窒素（Ｎ２）の混合ガスの場合は試料１
２（シリコン板）の表面に窒化シリコン膜（ｓＬ、ｎ４
）が形成される。第６図は第５図の密閉容器１７に真空
ポンプ２０と連結さねる排気口１９を設けた本発明の減
圧ＣＶＤ装置の実施例で、真空ポンプ２０を駆動するこ
とによって密閉容器１７の内部を真空に近い圧力に減圧
することができる。FIG. 5 shows an embodiment of the atmospheric pressure CVD apparatus of the present invention in which the sample heating device shown in FIG. 4 is provided inside a closed container 17, and 18 is a supply port for a compound gas containing the constituent elements of the thin film to be formed. . The compound gas is monosilane (SZH4), ammonia (
lJHj ), sample 1 in the case of a mixed gas of nitrogen (N2)
2 (silicon plate) with a silicon nitride film (sL, n4
) is formed. FIG. 6 shows an embodiment of the reduced pressure CVD apparatus of the present invention in which the airtight container 17 shown in FIG. 5 is provided with an exhaust port 19 connected to a vacuum pump 20. The pressure can be reduced to near vacuum.
５発明の効果〕本発明の試料加熱装置の第１の％長は試
料を加熱する熱源（赤外光）を部分的に制御することが
可能であるため、試料の表面温度の分布のバラツキを±
１℃以内に押えることができる点にある。その結果、第
１図の従来の装置においては不可能とされていた表面温
度の均一昇温ないしは表面温度に所定の温度勾配を形成
する温度制御が可能となる。第２の崎長は赤外綜の輻射
熱による加熱であるため、立上９の早いことである。第
１図の従来の装置は試料の表面温度が所定の３００℃に
達するのに約６時間を必要とするが、本発明の装置によ
ると１０分以内で可能である。本発明の試料加熱装置は
上記のようなすぐｔまた特性を有するのでこれを使用す
る第４図の常圧ＣＶＤ装置および第５図の減圧ＣｖＤ装
置によって形成される薄膜は膜質がすぐれ、膜厚分布の
バラツキを±１４係以内に押えることができ、ピンホー
ルのない良質の薄膜をうろことができる。しかも立上シ
が早いので薄膜形成の時間が短縮れ、良質の薄膜を不す
る基板の生産性を向上するすぐれた効果をイコする。5 Effects of the Invention] The first percent length of the sample heating device of the present invention is that the heat source (infrared light) for heating the sample can be partially controlled, so variations in the surface temperature distribution of the sample can be reduced. ±
The point is that it can be kept within 1°C. As a result, it becomes possible to uniformly raise the surface temperature or to control the temperature to form a predetermined temperature gradient in the surface temperature, which was impossible in the conventional apparatus shown in FIG. The second heating is due to heating by the radiant heat of the infrared heel, so the start-up 9 is early. The conventional apparatus shown in FIG. 1 requires approximately 6 hours for the surface temperature of the sample to reach the predetermined 300° C., but the apparatus of the present invention can achieve this within 10 minutes. Since the sample heating device of the present invention has the above-mentioned characteristics, the thin films formed by the normal pressure CVD device shown in FIG. 4 and the low pressure CVD device shown in FIG. The variation in distribution can be suppressed to within ±14 factors, and a high-quality thin film without pinholes can be obtained. Moreover, since the start-up is quick, the time for forming a thin film is shortened, which has an excellent effect of improving the productivity of substrates that do not require high-quality thin films.
第１図：従来の試料加熱装置を示す図
第２１ン１：従来の常圧ＯＶＤ装置を示す図第３し１：
従来の減圧ＯＶＤ装置を示す図第４回層本発明の試料加
熱装置を示す図第５回層本発明の常圧ＯＶＤ装餉゛を示
す図第６図：本発明の減圧ＯＶＤを示す図
１１・・・試料台、１２・・・試料、１３・・・載置板
、１４・・・窓孔、１５・・・光ファイバー、１６・・
・光源、１７・・・密閉容器、１８・・・供給口、１９
・・・排気口、２０・・・真空ポンプ
第４図
第５図Fig. 1: Diagram showing a conventional sample heating device Fig. 21-1: Fig. 3 showing a conventional atmospheric pressure OVD device Fig. 3-1:
A diagram showing a conventional low pressure OVD apparatus 4th layer A diagram showing a sample heating device of the present invention 5th layer A diagram showing an atmospheric pressure OVD apparatus of the present invention FIG. 6: A diagram showing a low pressure OVD apparatus of the present invention ...sample stand, 12...sample, 13...mounting plate, 14...window hole, 15...optical fiber, 16...
・Light source, 17... Airtight container, 18... Supply port, 19
...Exhaust port, 20...Vacuum pump Fig. 4 Fig. 5
Claims (1)
を設け、該窓孔に光ファイバーの先端をそね七ね挿入し
、該光ファイバーの後端には供給量を任意に制御するこ
とのできる赤外光の光跡を設けたことを特徴とする試料
加熱装置 （２）加熱さねる試料を載置する試料台に複数個の窓孔
を設け、庭窓孔に光ファイバーの先端をそれぞれ挿入し
、該光ファイバーの後端には供給量を任意に制御するこ
とのできる赤外光の光源を設けた試料加熱装置を、前記
試料の表面に形成される薄膜の組成元素を含む化合物ガ
スを供給する供給口を備えた密閉容器の内部に設けたこ
とを特徴とする常圧ＯＶＤ装置 （６）加熱される試料を載置する試料台に複数個の窓孔
を設け、該窓孔に光ファイバーの先端をそれぞれ挿入し
、該光ファイバーの後端には供給量を任意に制御するこ
とのできる赤外光の光源を設けた試料加熱装置を、前記
試料の表面に形成される薄膜の組成元素を含む化合物ガ
スを供給する供給口と、真４空ポンプに連結される排気
口とを備えた密閉容器の内部に設けたことを特徴とする
減圧ＯＶＤ装置[Claims] (1) A plurality of window holes are provided in the sample stage on which the sample to be heated is placed, and the tip of an optical fiber is inserted seven times into the window hole, and the rear end of the optical fiber is inserted into the window hole. A sample heating device characterized by being provided with an infrared light trail that allows the supply amount to be arbitrarily controlled. The tip of an optical fiber is inserted into each window hole, and a sample heating device, which is equipped with an infrared light source whose supply amount can be arbitrarily controlled, is installed at the rear end of the optical fiber. An atmospheric pressure OVD apparatus characterized in that it is provided inside a closed container equipped with a supply port for supplying a compound gas containing a compositional element (6) A plurality of window holes in a sample stage on which a sample to be heated is placed. The tip of an optical fiber is inserted into each of the window holes, and a sample heating device, which is equipped with an infrared light source whose supply amount can be arbitrarily controlled, is attached to the surface of the sample at the rear end of the optical fiber. A reduced-pressure OVD device, characterized in that it is provided inside a closed container, which is equipped with a supply port for supplying a compound gas containing the constituent elements of the thin film to be formed, and an exhaust port connected to a vacuum pump.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23528783A JPH069187B2 (en) | 1983-12-14 | 1983-12-14 | Sample heating device, atmospheric pressure CVD device and reduced pressure CVD device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23528783A JPH069187B2 (en) | 1983-12-14 | 1983-12-14 | Sample heating device, atmospheric pressure CVD device and reduced pressure CVD device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60126821A true JPS60126821A (en) | 1985-07-06 |
| JPH069187B2 JPH069187B2 (en) | 1994-02-02 |
Family
ID=16983870
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23528783A Expired - Lifetime JPH069187B2 (en) | 1983-12-14 | 1983-12-14 | Sample heating device, atmospheric pressure CVD device and reduced pressure CVD device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH069187B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995028002A1 (en) * | 1994-04-08 | 1995-10-19 | Hitachi, Ltd. | Method and device for processing semiconductor wafer |
| CN106463402A (en) * | 2014-06-09 | 2017-02-22 | 应用材料公司 | Substrate temperature control apparatus including optical fiber heating, substrate temperature control systems, electronic device processing systems, and methods |
| JP2017108155A (en) * | 2009-08-12 | 2017-06-15 | ジョージア ステート ユニバーシティ リサーチ ファウンデーション，インコーポレイテッド | High pressure chemical vapor deposition apparatuses and methods, and compositions produced therewith |
| CN109560035A (en) * | 2013-09-06 | 2019-04-02 | 应用材料公司 | Support component and semiconductor processing system |
| CN110211902A (en) * | 2019-06-19 | 2019-09-06 | 北京北方华创微电子装备有限公司 | Bogey and processing chamber |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9986598B2 (en) * | 2014-07-02 | 2018-05-29 | Applied Materials, Inc. | Temperature control apparatus including groove-routed optical fiber heating, substrate temperature control systems, electronic device processing systems, and processing methods |
-
1983
- 1983-12-14 JP JP23528783A patent/JPH069187B2/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995028002A1 (en) * | 1994-04-08 | 1995-10-19 | Hitachi, Ltd. | Method and device for processing semiconductor wafer |
| JP2017108155A (en) * | 2009-08-12 | 2017-06-15 | ジョージア ステート ユニバーシティ リサーチ ファウンデーション，インコーポレイテッド | High pressure chemical vapor deposition apparatuses and methods, and compositions produced therewith |
| CN109560035A (en) * | 2013-09-06 | 2019-04-02 | 应用材料公司 | Support component and semiconductor processing system |
| CN106463402A (en) * | 2014-06-09 | 2017-02-22 | 应用材料公司 | Substrate temperature control apparatus including optical fiber heating, substrate temperature control systems, electronic device processing systems, and methods |
| JP2017527980A (en) * | 2014-06-09 | 2017-09-21 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Substrate temperature control apparatus including optical fiber heating, substrate temperature control system, electronic device processing system and method |
| CN110211902A (en) * | 2019-06-19 | 2019-09-06 | 北京北方华创微电子装备有限公司 | Bogey and processing chamber |
| CN110211902B (en) * | 2019-06-19 | 2021-08-13 | 北京北方华创微电子装备有限公司 | Bearing device and process chamber |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH069187B2 (en) | 1994-02-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6984595B1 (en) | Layer member forming method | |
| US6786997B1 (en) | Plasma processing apparatus | |
| JP3067940B2 (en) | Silicon nitride thin film deposition | |
| US5002630A (en) | Method for high temperature thermal processing with reduced convective heat loss | |
| US7700376B2 (en) | Edge temperature compensation in thermal processing particularly useful for SOI wafers | |
| US5914493A (en) | Charged-particle-beam exposure apparatus and methods with substrate-temperature control | |
| CN100565786C (en) | The system and method that in the cold wall CVD system, suppresses the chip temperature skew | |
| JPS60126821A (en) | Sample heating device, normal pressure cvd device and vacuum cvd device | |
| JP2000164588A (en) | Substrate-heating method and device | |
| JPH0382017A (en) | Manufacture apparatus for semiconductor device | |
| JPH0766139A (en) | Chemical vapor deposition system | |
| JPH0234595A (en) | Apparatus for vapor phase epitaxial growth and heating process of substrate | |
| JPH09235189A (en) | Production of semiconductor single crystal thin film | |
| JP3078574B2 (en) | Vapor phase growth equipment | |
| KR20030059745A (en) | Wafer temperature compensator using reflector | |
| KR980011761A (en) | Semiconductor device manufacturing apparatus | |
| JPS6247134A (en) | Semiconductor manufacturing equipment | |
| JP2636215B2 (en) | Deposition film forming equipment | |
| JPS6136698B2 (en) | ||
| JPS587817A (en) | Vapor growth method for semiconductor | |
| JPS55121649A (en) | Cvd device | |
| KR100763681B1 (en) | Device and method for controlling the high density plasma chemical vapor deposition | |
| JPH04139815A (en) | Cvd apparatus | |
| JPH11256325A (en) | Production of crystalline sic thin film | |
| JPH01120812A (en) | Semiconductor wafer placing table |