DE3852642T2 - Heizsystem für reaktionskammer einer chemischen dampfniederschlagsvorrichtung. - Google Patents

Heizsystem für reaktionskammer einer chemischen dampfniederschlagsvorrichtung.

Info

Publication number
DE3852642T2
DE3852642T2 DE3852642T DE3852642T DE3852642T2 DE 3852642 T2 DE3852642 T2 DE 3852642T2 DE 3852642 T DE3852642 T DE 3852642T DE 3852642 T DE3852642 T DE 3852642T DE 3852642 T2 DE3852642 T2 DE 3852642T2
Authority
DE
Germany
Prior art keywords
heating system
reaction chamber
chemical vapor
substrate
element assembly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3852642T
Other languages
English (en)
Other versions
DE3852642D1 (de
Inventor
Mcdonald Robinson
Albert Ozias
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASM America Inc
Original Assignee
Advanced Semiconductor Materials America Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Semiconductor Materials America Inc filed Critical Advanced Semiconductor Materials America Inc
Application granted granted Critical
Publication of DE3852642D1 publication Critical patent/DE3852642D1/de
Publication of DE3852642T2 publication Critical patent/DE3852642T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
DE3852642T 1987-06-18 1988-06-17 Heizsystem für reaktionskammer einer chemischen dampfniederschlagsvorrichtung. Expired - Lifetime DE3852642T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/063,409 US4836138A (en) 1987-06-18 1987-06-18 Heating system for reaction chamber of chemical vapor deposition equipment
PCT/US1988/002117 WO1988010322A1 (en) 1987-06-18 1988-06-17 Heating system for reaction chamber of chemical vapor deposition equipment

Publications (2)

Publication Number Publication Date
DE3852642D1 DE3852642D1 (de) 1995-02-09
DE3852642T2 true DE3852642T2 (de) 1995-07-27

Family

ID=22049003

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3852642T Expired - Lifetime DE3852642T2 (de) 1987-06-18 1988-06-17 Heizsystem für reaktionskammer einer chemischen dampfniederschlagsvorrichtung.

Country Status (8)

Country Link
US (1) US4836138A (de)
EP (1) EP0363437B1 (de)
JP (1) JPH07100863B2 (de)
AT (1) ATE116381T1 (de)
DE (1) DE3852642T2 (de)
HK (1) HK76095A (de)
SG (1) SG38910G (de)
WO (1) WO1988010322A1 (de)

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US5268989A (en) * 1992-04-16 1993-12-07 Texas Instruments Incorporated Multi zone illuminator with embeded process control sensors and light interference elimination circuit
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US5820686A (en) * 1993-01-21 1998-10-13 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
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US5444815A (en) * 1993-12-16 1995-08-22 Texas Instruments Incorporated Multi-zone lamp interference correction system
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EP1046728B1 (de) * 1995-08-03 2003-05-14 ASM America, Inc. Prozesskammer mit innerer Tragstruktur
US6093252A (en) 1995-08-03 2000-07-25 Asm America, Inc. Process chamber with inner support
US5551985A (en) * 1995-08-18 1996-09-03 Torrex Equipment Corporation Method and apparatus for cold wall chemical vapor deposition
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US5805769A (en) * 1996-03-21 1998-09-08 Amana Company, L.P. Adjustable ellipsoidal reflector for food heating apparatus
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US5879459A (en) * 1997-08-29 1999-03-09 Genus, Inc. Vertically-stacked process reactor and cluster tool system for atomic layer deposition
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US6210484B1 (en) 1998-09-09 2001-04-03 Steag Rtp Systems, Inc. Heating device containing a multi-lamp cone for heating semiconductor wafers
JP4625183B2 (ja) * 1998-11-20 2011-02-02 ステアーグ アール ティ ピー システムズ インコーポレイテッド 半導体ウェハのための急速加熱及び冷却装置
US6771895B2 (en) 1999-01-06 2004-08-03 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers
US6281141B1 (en) 1999-02-08 2001-08-28 Steag Rtp Systems, Inc. Process for forming thin dielectric layers in semiconductor devices
FI118342B (fi) 1999-05-10 2007-10-15 Asm Int Laite ohutkalvojen valmistamiseksi
TW411033U (en) * 1999-05-12 2000-11-01 Nat Science Council Reflector structure for improving irradiation uniformity of liner lamp array
US6485603B1 (en) * 1999-07-01 2002-11-26 Applied Materials, Inc. Method and apparatus for conserving energy within a process chamber
US6383330B1 (en) 1999-09-10 2002-05-07 Asm America, Inc. Quartz wafer processing chamber
US6503330B1 (en) 1999-12-22 2003-01-07 Genus, Inc. Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition
US6551399B1 (en) 2000-01-10 2003-04-22 Genus Inc. Fully integrated process for MIM capacitors using atomic layer deposition
US7037797B1 (en) 2000-03-17 2006-05-02 Mattson Technology, Inc. Localized heating and cooling of substrates
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US6617173B1 (en) 2000-10-11 2003-09-09 Genus, Inc. Integration of ferromagnetic films with ultrathin insulating film using atomic layer deposition
US20030190424A1 (en) * 2000-10-20 2003-10-09 Ofer Sneh Process for tungsten silicide atomic layer deposition
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US6939579B2 (en) * 2001-03-07 2005-09-06 Asm International N.V. ALD reactor and method with controlled wall temperature
US6818864B2 (en) * 2002-08-09 2004-11-16 Asm America, Inc. LED heat lamp arrays for CVD heating
US6879777B2 (en) 2002-10-03 2005-04-12 Asm America, Inc. Localized heating of substrates using optics
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US7108753B2 (en) * 2003-10-29 2006-09-19 Asm America, Inc. Staggered ribs on process chamber to reduce thermal effects
US20050217585A1 (en) * 2004-04-01 2005-10-06 Blomiley Eric R Substrate susceptor for receiving a substrate to be deposited upon
US20050223993A1 (en) * 2004-04-08 2005-10-13 Blomiley Eric R Deposition apparatuses; methods for assessing alignments of substrates within deposition apparatuses; and methods for assessing thicknesses of deposited layers within deposition apparatuses
US7396415B2 (en) * 2005-06-02 2008-07-08 Asm America, Inc. Apparatus and methods for isolating chemical vapor reactions at a substrate surface
US7597574B2 (en) * 2006-08-11 2009-10-06 Asm America, Inc. Lamp fasteners for semiconductor processing reactors
US20090101633A1 (en) * 2007-10-19 2009-04-23 Asm America, Inc. Reactor with small linear lamps for localized heat control and improved temperature uniformity
US20100209082A1 (en) * 2008-05-30 2010-08-19 Alta Devices, Inc. Heating lamp system
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US8440048B2 (en) * 2009-01-28 2013-05-14 Asm America, Inc. Load lock having secondary isolation chamber
US8404499B2 (en) * 2009-04-20 2013-03-26 Applied Materials, Inc. LED substrate processing
KR20130051013A (ko) * 2010-06-09 2013-05-16 솔렉셀, 인크. 고생산성 박막 증착 방법 및 시스템
JP5615102B2 (ja) * 2010-08-31 2014-10-29 株式会社ニューフレアテクノロジー 半導体製造方法及び半導体製造装置
US9885123B2 (en) * 2011-03-16 2018-02-06 Asm America, Inc. Rapid bake of semiconductor substrate with upper linear heating elements perpendicular to horizontal gas flow
JP5626163B2 (ja) * 2011-09-08 2014-11-19 信越半導体株式会社 エピタキシャル成長装置
JP5807522B2 (ja) * 2011-11-17 2015-11-10 信越半導体株式会社 エピタキシャル成長装置
US9960059B2 (en) * 2012-03-30 2018-05-01 Taiwan Semiconductor Manufacturing Company, Ltd. Honeycomb heaters for integrated circuit manufacturing
KR102181233B1 (ko) * 2013-07-19 2020-11-23 삼성디스플레이 주식회사 기상 증착 장치 및 이를 이용한 표시 장치의 제조방법
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EP3652358A1 (de) 2017-07-14 2020-05-20 King Abdullah University Of Science And Technology System und verfahren zur metallorganischen chemischen gasphasenabscheidung
KR102462263B1 (ko) * 2017-10-30 2022-11-02 어플라이드 머티어리얼스, 인코포레이티드 Epi에서의 다중 구역 스폿 가열
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US3836751A (en) * 1973-07-26 1974-09-17 Applied Materials Inc Temperature controlled profiling heater
US4654509A (en) * 1985-10-07 1987-03-31 Epsilon Limited Partnership Method and apparatus for substrate heating in an axially symmetric epitaxial deposition apparatus

Also Published As

Publication number Publication date
JPH07100863B2 (ja) 1995-11-01
JPH03500549A (ja) 1991-02-07
EP0363437B1 (de) 1994-12-28
ATE116381T1 (de) 1995-01-15
EP0363437A1 (de) 1990-04-18
US4836138A (en) 1989-06-06
SG38910G (en) 1995-09-01
HK76095A (en) 1995-05-26
EP0363437A4 (en) 1990-11-28
WO1988010322A1 (en) 1988-12-29
DE3852642D1 (de) 1995-02-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: ASM AMERICA, INC. (N.D.GES.DES STAATES DELAWARE),