KR960032592A - 반도체 제조 장치 - Google Patents
반도체 제조 장치 Download PDFInfo
- Publication number
- KR960032592A KR960032592A KR1019950002249A KR19950002249A KR960032592A KR 960032592 A KR960032592 A KR 960032592A KR 1019950002249 A KR1019950002249 A KR 1019950002249A KR 19950002249 A KR19950002249 A KR 19950002249A KR 960032592 A KR960032592 A KR 960032592A
- Authority
- KR
- South Korea
- Prior art keywords
- gas
- shower head
- reaction
- inlet
- semiconductor manufacturing
- Prior art date
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
유기 금속 화학 기상 증착법(Metal Organic Chemical Vapor Deposition MOCVD법) 장치에 사용되는 샤워 헤드에 관하여 개시한다. 본 발명은 반응관과, 상기 반응관에 반응기체를 유입할 수 있는 유입구와, 상기 반응가스의 유입구와 연결되고, 기체에 의해 온도조절되고 다수의 구멍을 통해 반응기체를 가열 배출할 수 있는 샤워 헤드와, 상기 샤워헤드의 대향하여 상기 반응기체가 반응할 수 있는 기판이 탑재될 수 있는 히터블럭을 구비한다. 본 발명에 의하면, 샤워 헤드의 온도를 질소기체를 이용하여 정확히 조절함으로써, 반도체 기판상에 증착되는 금속막을 균일하고 재현성 있고 비저항이 낮게 형성할 수 있다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 MOCVD법을 이용한 본 발명의 반도체 장치를 설명하기 위한 개략도이다.
Claims (2)
- 반응과; 상기 반응관에 반응기체를 유입할 수 있는 유입구; 상기 반응가스의 유입구와 연결되고, 기체에 의해 온도조절되고 다수의 구멍을 통해 반응기체를 가열 배출할 수 있는 샤워 헤드; 및 상기 샤워 헤드의 대향하여 상기 반응기체가 반응할 수 있는 기판이 탑재될 수 있는 히터블럭을 구비하는 것을 특징으로 하는 반도체 제조장치.
- 제1항에 있어서, 상기 기체는 질소기체를 사용하는 것을 특징으로 하는 반도체 제조 장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950002249A KR0175002B1 (ko) | 1995-02-08 | 1995-02-08 | 유기금속화학기상증착장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950002249A KR0175002B1 (ko) | 1995-02-08 | 1995-02-08 | 유기금속화학기상증착장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960032592A true KR960032592A (ko) | 1996-09-17 |
KR0175002B1 KR0175002B1 (ko) | 1999-04-01 |
Family
ID=19407819
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950002249A KR0175002B1 (ko) | 1995-02-08 | 1995-02-08 | 유기금속화학기상증착장치 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR0175002B1 (ko) |
-
1995
- 1995-02-08 KR KR1019950002249A patent/KR0175002B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR0175002B1 (ko) | 1999-04-01 |
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
AMND | Amendment | ||
E601 | Decision to refuse application | ||
J201 | Request for trial against refusal decision | ||
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GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20061030 Year of fee payment: 9 |
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LAPS | Lapse due to unpaid annual fee |