JPS574118A - Vapor phase reaction of semiconductor substrate - Google Patents

Vapor phase reaction of semiconductor substrate

Info

Publication number
JPS574118A
JPS574118A JP7716180A JP7716180A JPS574118A JP S574118 A JPS574118 A JP S574118A JP 7716180 A JP7716180 A JP 7716180A JP 7716180 A JP7716180 A JP 7716180A JP S574118 A JPS574118 A JP S574118A
Authority
JP
Japan
Prior art keywords
substrate
semiconductor substrate
vapor phase
gas
supporting plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7716180A
Other languages
Japanese (ja)
Inventor
Hiroshi Kobayakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7716180A priority Critical patent/JPS574118A/en
Publication of JPS574118A publication Critical patent/JPS574118A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45589—Movable means, e.g. fans
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To enhance efficiency of production and to obtain a growth layer having little variation of thickness and specific resistance value on a semiconductor substrate when the semiconductor substrate is heated and a vapor phase reaction gas is sprayed on the surface thereof to make it to perform vapor phase reaction by a method wherein the substrate is placed at the prescribed position without being moved and a gas injecting part is transferred along the surface of the substrate. CONSTITUTION:A semiconductor substrate supporting plate 11 having a built-in cartridge heater 12 is arranged horizontally, plural semiconductor substrate 3a, 3b, etc., to be performed vapor phase growth thereon are put on it and are heated at 350-500 deg.C. Then a doping nozzle 14 to mount over the supporting plate 11 are arranged placing a gap between them, and is transferred along rails 5 extending over the substrate on the starting edge and the substrate on the ending edge dragging multiple sliding pipes, bellows, etc., constituting a conduit of gas. At this time, the doping gas is made to be blown against the surface of the substrate with the prescribed blasting pressure. Accordingly the supporting plate 11 having large weight can get along without being transferred, and the because the nozzle 14 is light, variation of the growth layer becomes little.
JP7716180A 1980-06-10 1980-06-10 Vapor phase reaction of semiconductor substrate Pending JPS574118A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7716180A JPS574118A (en) 1980-06-10 1980-06-10 Vapor phase reaction of semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7716180A JPS574118A (en) 1980-06-10 1980-06-10 Vapor phase reaction of semiconductor substrate

Publications (1)

Publication Number Publication Date
JPS574118A true JPS574118A (en) 1982-01-09

Family

ID=13626060

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7716180A Pending JPS574118A (en) 1980-06-10 1980-06-10 Vapor phase reaction of semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS574118A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6313663A (en) * 1986-07-04 1988-01-20 Nippon Abionikusu Kk Reflow soldering device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6313663A (en) * 1986-07-04 1988-01-20 Nippon Abionikusu Kk Reflow soldering device
JPH0331546B2 (en) * 1986-07-04 1991-05-07 Nippon Avionics Co Ltd

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