ES2135719T3 - Procedimiento y dispositivo pcvd de recubrimiento de substratos curvados. - Google Patents
Procedimiento y dispositivo pcvd de recubrimiento de substratos curvados.Info
- Publication number
- ES2135719T3 ES2135719T3 ES95914322T ES95914322T ES2135719T3 ES 2135719 T3 ES2135719 T3 ES 2135719T3 ES 95914322 T ES95914322 T ES 95914322T ES 95914322 T ES95914322 T ES 95914322T ES 2135719 T3 ES2135719 T3 ES 2135719T3
- Authority
- ES
- Spain
- Prior art keywords
- gas
- substrate
- sub
- until
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 title abstract 6
- 238000000034 method Methods 0.000 title abstract 3
- 239000011248 coating agent Substances 0.000 title 1
- 238000000576 coating method Methods 0.000 title 1
- 238000005457 optimization Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
SE DESCRIBE UN PROCEDIMIENTO DE PCVD PARA LA OBTENCION DE RECUBRIMIENTOS DE GROSOR UNIFORME SOBRE SUSTRATOS ABOMBADOS, POR EL CUAL LA SUPERFICIE DEL SUSTRATO QUE SE VA A RECUBRIR SE COLOCA EN COMUNICACION CON LA SUPERFICIE DE PASO DE UN GAS DE UNA DUCHA DE GAS. PARA DETERMINAR LOS PARAMETROS APROPIADOS DEL PROCESO, EN UNA PRIMERA SERIE DE ENSAYOS PARA UN TIPO DE SUSTRATO A RECUBRIR, SE MANTIENE CONSTANTE EL TAMAÑO DE LAS SUPERFICIES DE PASO DE GAS Y LA MASA DE GAS PASA A TRAVES DE ESTAS SUPERFICIES, MIENTRAS QUE SE MODIFICAN GRADUALMENTE LOS INTERVALOS ENTRE CADA IMPULSO, EMPEZANDO POR UN VALOR INICIAL T{SUB,A} HASTA ALCANZAR UN VALOR OPTIMO T{SUB,EFF} Y HASTA QUE LA UNIFORMIDAD DEL GROSOR DE LAS CAPAS FORMADAS SOBRE EL SUSTRATO NO AUMENTE. OPCIONALMENTE, DURANTE UNA SEGUNDA SERIE DE ENSAYOS, EL VALOR T{SUB,EFF} PUEDE MANTENERSE CONSTANTE MIENTRAS QUE EL GROSOR DE LAS CAPAS SE MODIFICA POR OPTIMIZACION DE LOS PARAMETROS LOCALES Y/O LA MASA DE GAS FLUYE HASTA QUE SU UNIFORMIDAD NO SE PUEDA AUMENTAR MAS. LA INSTALACION TIENEN UNA DUCHA DE GAS (10), SUS PASOS DE GAS (11) ESTAN COLOCADOS ENFRENTE DEL SUSTRATO (1) QUE SE VA A RECUBRIR. LAS ZONAS (13, 14 Y 15) ESTAN UNIDAS POR CONDUCTOS (21, 21A Y 22) A UNA FUENTE DE GAS QUE NO FORMA RECUBRIMIENTOS (27) Y A UNA FUENTE DE GAS (28) QUE ABASTECE DE GAS RECIENTE.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4410841 | 1994-03-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2135719T3 true ES2135719T3 (es) | 1999-11-01 |
Family
ID=6514121
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES95914322T Expired - Lifetime ES2135719T3 (es) | 1994-03-29 | 1995-03-29 | Procedimiento y dispositivo pcvd de recubrimiento de substratos curvados. |
Country Status (8)
Country | Link |
---|---|
US (1) | US6025013A (es) |
EP (1) | EP0753082B1 (es) |
JP (1) | JP3172537B2 (es) |
AT (1) | ATE181969T1 (es) |
CA (1) | CA2186587C (es) |
DE (1) | DE59506358D1 (es) |
ES (1) | ES2135719T3 (es) |
WO (1) | WO1995026427A1 (es) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2731370B1 (fr) * | 1995-03-07 | 1997-06-06 | Cie Generale D Optique Essilor | Procede pour le depot assiste par plasma d'au moins une couche mince sur un substrat a deux faces, et reacteur correspondant |
JP4066292B2 (ja) * | 1999-06-09 | 2008-03-26 | 株式会社小糸製作所 | 自動車用プラスチック部品の保護膜形成方法 |
DE19932082A1 (de) * | 1999-07-12 | 2001-01-18 | Schott Glas | Interferenzoptisches Schmalbandfilter |
DE10010766B4 (de) | 2000-03-04 | 2006-11-30 | Schott Ag | Verfahren und Vorrichtung zur Beschichtung von insbesondere gekrümmten Substraten |
US6629763B2 (en) | 2000-06-17 | 2003-10-07 | Schott Glas | Object which has optical layers |
DE10029905A1 (de) * | 2000-06-17 | 2002-01-03 | Schott Auer Gmbh | Reflektor, insbesondere zur Anwendung bei einem Kraftfahrzeug |
US6719848B2 (en) * | 2001-08-16 | 2004-04-13 | First Solar, Llc | Chemical vapor deposition system |
US6678082B2 (en) | 2001-09-12 | 2004-01-13 | Harris Corporation | Electro-optical component including a fluorinated poly(phenylene ether ketone) protective coating and related methods |
JP2003266011A (ja) * | 2001-09-17 | 2003-09-24 | Cark Zeiss Smt Ag | 光学部材用の基板の塗布方法および塗布装置 |
DE10161469A1 (de) * | 2001-12-13 | 2003-07-03 | Schott Glas | Volumenoptimierter Reaktor zur beidseitig gleichzeitigen Beschichtung von Brillengläsern |
KR100453014B1 (ko) * | 2001-12-26 | 2004-10-14 | 주성엔지니어링(주) | Cvd 장치 |
US20040142558A1 (en) * | 2002-12-05 | 2004-07-22 | Granneman Ernst H. A. | Apparatus and method for atomic layer deposition on substrates |
US7601223B2 (en) * | 2003-04-29 | 2009-10-13 | Asm International N.V. | Showerhead assembly and ALD methods |
US7537662B2 (en) * | 2003-04-29 | 2009-05-26 | Asm International N.V. | Method and apparatus for depositing thin films on a surface |
US6921437B1 (en) * | 2003-05-30 | 2005-07-26 | Aviza Technology, Inc. | Gas distribution system |
US7250197B2 (en) * | 2003-08-25 | 2007-07-31 | Bausch & Lomb Incorporated | Plasma treatment of contact lens and IOL |
DE102004030344B4 (de) * | 2004-06-18 | 2012-12-06 | Carl Zeiss | Vorrichtung zum Beschichten optischer Gläser mittels plasmaunterstützter chemischer Dampfabscheidung (CVD) |
DE102004034417B4 (de) * | 2004-07-15 | 2007-09-27 | Schott Ag | Verfahren zur Herstellung eines beschichteten Substrats mit gewölbter Oberfläche |
JP4550507B2 (ja) * | 2004-07-26 | 2010-09-22 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
US20070045239A1 (en) * | 2005-08-31 | 2007-03-01 | Micron Technology, Inc. | Apparatus and method for processing a microfeature workpiece using a plasma |
TW200734481A (en) * | 2006-03-07 | 2007-09-16 | Atto Co Ltd | Apparatus for cleaning chamber using gas separation type showerhead |
US20070221129A1 (en) * | 2006-03-21 | 2007-09-27 | Atto Co., Ltd | Apparatus for depositing atomic layer using gas separation type showerhead |
DE102006043943A1 (de) * | 2006-09-14 | 2008-03-27 | Leybold Optics Gmbh | Verfahren zum Aufbringen von Schichten auf Substraten mit gekrümmten Oberflächen |
DE102007037527B4 (de) * | 2006-11-10 | 2013-05-08 | Schott Ag | Verfahren zum Beschichten von Gegenständen mit Wechselschichten |
US8673080B2 (en) | 2007-10-16 | 2014-03-18 | Novellus Systems, Inc. | Temperature controlled showerhead |
US20090236447A1 (en) * | 2008-03-21 | 2009-09-24 | Applied Materials, Inc. | Method and apparatus for controlling gas injection in process chamber |
US20100018463A1 (en) * | 2008-07-24 | 2010-01-28 | Chen-Hua Yu | Plural Gas Distribution System |
KR101937115B1 (ko) | 2011-03-04 | 2019-01-09 | 노벨러스 시스템즈, 인코포레이티드 | 하이브리드 세라믹 샤워헤드 |
US8900364B2 (en) * | 2011-11-29 | 2014-12-02 | Intermolecular, Inc. | High productivity vapor processing system |
US20130255784A1 (en) * | 2012-03-30 | 2013-10-03 | Applied Materials, Inc. | Gas delivery systems and methods of use thereof |
US9388494B2 (en) * | 2012-06-25 | 2016-07-12 | Novellus Systems, Inc. | Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region |
EP2888087A4 (en) * | 2012-08-24 | 2016-05-18 | Advanced Technology Emission Solutions Inc | CATALYST COMPONENT AND METHOD FOR THE PRODUCTION THEREOF |
JP6107327B2 (ja) * | 2013-03-29 | 2017-04-05 | 東京エレクトロン株式会社 | 成膜装置及びガス供給装置並びに成膜方法 |
US11414759B2 (en) * | 2013-11-29 | 2022-08-16 | Taiwan Semiconductor Manufacturing Co., Ltd | Mechanisms for supplying process gas into wafer process apparatus |
KR102376429B1 (ko) * | 2013-12-18 | 2022-03-17 | 램 리써치 코포레이션 | 균일성 베플들을 포함하는 반도체 기판 프로세싱 장치 |
US10741365B2 (en) * | 2014-05-05 | 2020-08-11 | Lam Research Corporation | Low volume showerhead with porous baffle |
US10378107B2 (en) | 2015-05-22 | 2019-08-13 | Lam Research Corporation | Low volume showerhead with faceplate holes for improved flow uniformity |
US10023959B2 (en) | 2015-05-26 | 2018-07-17 | Lam Research Corporation | Anti-transient showerhead |
CN112349572B (zh) * | 2019-08-09 | 2024-03-08 | 中微半导体设备(上海)股份有限公司 | 一种气体喷淋头及等离子处理装置 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE240186C (es) * | ||||
JPH0635323B2 (ja) * | 1982-06-25 | 1994-05-11 | 株式会社日立製作所 | 表面処理方法 |
US4500563A (en) * | 1982-12-15 | 1985-02-19 | Pacific Western Systems, Inc. | Independently variably controlled pulsed R.F. plasma chemical vapor processing |
DE8313563U1 (de) * | 1983-05-07 | 1986-03-06 | Linn, Horst, Dipl.-Ing. (FH), 8459 Hirschbach | Vorrichtung zur Behandlung von Oberflächen und oberflächennahen Schichten von Werkstücken,insbesondere für zahntechnische und medizinische Zwecke, aus elektrisch leitendem Material |
DE3413019A1 (de) * | 1984-04-06 | 1985-10-17 | Robert Bosch Gmbh, 7000 Stuttgart | Verfahren zum aufbringen einer duennen, transparenten schicht auf der oberflaeche optischer elemente |
GB8516537D0 (en) * | 1985-06-29 | 1985-07-31 | Standard Telephones Cables Ltd | Pulsed plasma apparatus |
US4973883A (en) * | 1987-05-01 | 1990-11-27 | Semiconductor Energy Laborator Co., Ltd. | Plasma processing apparatus with a lisitano coil |
US5180436A (en) * | 1988-07-26 | 1993-01-19 | Matsushita Electric Industrial Co., Ltd. | Microwave plasma film deposition system |
DD274830A1 (de) * | 1988-08-12 | 1990-01-03 | Elektromat Veb | Vorrichtung zur gasphasenbearbeitung von scheibenfoermigen werkstuecken |
JP2701363B2 (ja) * | 1988-09-12 | 1998-01-21 | 三菱電機株式会社 | 半導体装置の製造方法及びそれに使用する薄膜形成装置 |
US5192717A (en) * | 1989-04-28 | 1993-03-09 | Canon Kabushiki Kaisha | Process for the formation of a polycrystalline semiconductor film by microwave plasma chemical vapor deposition method |
DE3931713C1 (es) * | 1989-09-22 | 1991-03-14 | Balzers Ag, Balzers, Li | |
US5227202A (en) * | 1989-09-22 | 1993-07-13 | Balzers Aktiengesellschaft | Method for chemical coating on opposite surfaces of workpieces |
KR950013426B1 (ko) * | 1990-02-28 | 1995-11-08 | 가부시기가이샤 히다찌세이사구쇼 | 마이크로파플라즈마강화 cvd장치 및 박막트랜지스터, 그리고 그 응용장치 |
DE4008405C1 (es) * | 1990-03-16 | 1991-07-11 | Schott Glaswerke, 6500 Mainz, De | |
DE4142877A1 (de) * | 1990-12-28 | 1992-07-02 | Mitsubishi Electric Corp | Cvd-verfahren und vorrichtung zu dessen durchfuehrung |
JPH04293235A (ja) * | 1991-03-22 | 1992-10-16 | Kokusai Electric Co Ltd | プラズマ発生装置 |
US5236636A (en) * | 1991-10-07 | 1993-08-17 | Ford Motor Company | In-mold plasma treatment |
DE4137606C1 (es) * | 1991-11-15 | 1992-07-30 | Schott Glaswerke, 6500 Mainz, De | |
JPH0633246A (ja) * | 1992-07-21 | 1994-02-08 | Canon Inc | 堆積膜形成方法および堆積膜形成装置 |
CA2130167C (en) * | 1993-08-27 | 1999-07-20 | Jesse N. Matossian | Nondestructive determination of plasma processing treatment |
-
1995
- 1995-03-29 CA CA002186587A patent/CA2186587C/en not_active Expired - Fee Related
- 1995-03-29 JP JP52498095A patent/JP3172537B2/ja not_active Expired - Fee Related
- 1995-03-29 AT AT95914322T patent/ATE181969T1/de not_active IP Right Cessation
- 1995-03-29 WO PCT/EP1995/001168 patent/WO1995026427A1/de active IP Right Grant
- 1995-03-29 DE DE59506358T patent/DE59506358D1/de not_active Expired - Lifetime
- 1995-03-29 EP EP95914322A patent/EP0753082B1/de not_active Expired - Lifetime
- 1995-03-29 ES ES95914322T patent/ES2135719T3/es not_active Expired - Lifetime
- 1995-03-29 US US08/716,453 patent/US6025013A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
WO1995026427A1 (de) | 1995-10-05 |
DE59506358D1 (de) | 1999-08-12 |
ATE181969T1 (de) | 1999-07-15 |
EP0753082A1 (de) | 1997-01-15 |
CA2186587C (en) | 2004-05-18 |
CA2186587A1 (en) | 1995-10-05 |
US6025013A (en) | 2000-02-15 |
EP0753082B1 (de) | 1999-07-07 |
JP3172537B2 (ja) | 2001-06-04 |
JPH09511019A (ja) | 1997-11-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ES2135719T3 (es) | Procedimiento y dispositivo pcvd de recubrimiento de substratos curvados. | |
BR0214907B1 (pt) | método para fluoração de um artigo poroso, e, aparelho para fluoração de um substrato. | |
TW200615710A (en) | Developing device and developing method | |
IN266855B (es) | ||
DE60334650D1 (de) | Dünnfilmbeschichtung mit einer transparenten Grundierungsschicht | |
ES2032566T3 (es) | Aparato y metodo para revestir bandas. | |
MX9308187A (es) | Metodos de recubrimiento mediante meniscos. | |
TW200612204A (en) | Silicon rich dielectric antireflective coating | |
BR0209345A (pt) | Tablete, e, método para revestir uma superfìcie de um tablete | |
TW200625508A (en) | Treating apparatus | |
JPS5419662A (en) | Forming method of plasma cvd film | |
TW200632117A (en) | Method of mounting substrate in film deposition apparatus and method of depositing film | |
JPS5391665A (en) | Plasma cvd device | |
EP1656671A4 (en) | SHEARING DEVICE AND COATING METER PRODUCED THEREwith | |
CN209144261U (zh) | 匀气装置以及半导体工艺设备 | |
CN106847997B (zh) | 彩色太阳能电池片、制备方法、电池组件以及pecvd设备 | |
JPS58141572A (ja) | 半導体装置 | |
TW200531837A (en) | Slotted substrates and methods of forming | |
TW331656B (en) | The produce of wafer and its devices | |
JPS55121648A (en) | Cvd device | |
JPS52136573A (en) | Cvd apparatus | |
FR2369016A1 (fr) | Procede d | |
JPS5381069A (en) | Production of susceptor in cvd device | |
WO2020229563A3 (en) | Seed structures for structured coatings for optical and other devices | |
DE10344424A1 (de) | Vorrichtung zur elektrochemischen Abscheidung eines Beschichtungsmaterials auf einem Substrat sowie Verfahren zur elektrochemischen Abscheidung |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG2A | Definitive protection |
Ref document number: 753082 Country of ref document: ES |