TW200305658A - Device for depositing thin layers on a substrate - Google Patents

Device for depositing thin layers on a substrate Download PDF

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Publication number
TW200305658A
TW200305658A TW092105594A TW92105594A TW200305658A TW 200305658 A TW200305658 A TW 200305658A TW 092105594 A TW092105594 A TW 092105594A TW 92105594 A TW92105594 A TW 92105594A TW 200305658 A TW200305658 A TW 200305658A
Authority
TW
Taiwan
Prior art keywords
gas
substrate
plate
patent application
reaction chamber
Prior art date
Application number
TW092105594A
Other languages
English (en)
Chinese (zh)
Inventor
Holger Jurgensen
Gerd Strauch
Original Assignee
Aixtron Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron Ag filed Critical Aixtron Ag
Publication of TW200305658A publication Critical patent/TW200305658A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45568—Porous nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45572—Cooled nozzles

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
TW092105594A 2002-03-15 2003-03-14 Device for depositing thin layers on a substrate TW200305658A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10211442A DE10211442A1 (de) 2002-03-15 2002-03-15 Vorrichtung zum Abscheiden von dünnen Schichten auf einem Substrat

Publications (1)

Publication Number Publication Date
TW200305658A true TW200305658A (en) 2003-11-01

Family

ID=27771333

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092105594A TW200305658A (en) 2002-03-15 2003-03-14 Device for depositing thin layers on a substrate

Country Status (7)

Country Link
EP (1) EP1485518A1 (de)
JP (1) JP2005520932A (de)
KR (1) KR20040101261A (de)
AU (1) AU2003212349A1 (de)
DE (1) DE10211442A1 (de)
TW (1) TW200305658A (de)
WO (1) WO2003078681A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117004928A (zh) * 2023-09-21 2023-11-07 上海谙邦半导体设备有限公司 一种化学气相沉积晶圆保护系统

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004035971A (ja) * 2002-07-05 2004-02-05 Ulvac Japan Ltd 薄膜製造装置
US8083853B2 (en) 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
JP5046334B2 (ja) * 2004-10-11 2012-10-10 ソレラス・アドヴァンスト・コーティングス・ナムローゼ・フェンノートシャップ 長型ガス分配システム
DE102006018515A1 (de) 2006-04-21 2007-10-25 Aixtron Ag CVD-Reaktor mit absenkbarer Prozesskammerdecke
DE102007024798A1 (de) 2007-05-25 2008-11-27 Aixtron Ag Vorrichtung zum Abscheiden von GaN mittels GaCI mit einem molybdänmaskierten Quarzteil, insbesondere Gaseinlassorgan
US20080317973A1 (en) 2007-06-22 2008-12-25 White John M Diffuser support
KR101065747B1 (ko) * 2009-06-22 2011-09-19 주식회사 티지솔라 균일한 가스 공급수단을 구비하는 플라즈마 장치
DE102009043840A1 (de) * 2009-08-24 2011-03-03 Aixtron Ag CVD-Reaktor mit streifenförmig verlaufenden Gaseintrittszonen sowie Verfahren zum Abscheiden einer Schicht auf einem Substrat in einem derartigen CVD-Reaktor
CN102766902B (zh) * 2011-05-05 2015-12-02 北京北方微电子基地设备工艺研究中心有限责任公司 工艺腔室装置和具有该工艺腔室装置的基片处理设备
DE102011107894A1 (de) 2011-07-18 2013-01-24 Creaphys Gmbh Beschichtungseinrichtung, insbesondere für die Innenbeschichtung von Hohlkörpern, und Beschichtungsverfahren
DE102012110125A1 (de) 2012-10-24 2014-04-24 Aixtron Se Vorrichtung zum Behandeln von Substraten mit einer auswechselbaren Deckenplatte sowie Verfahren zum Auswechseln einer derartigen Deckenplatte
DE102014118704A1 (de) 2014-01-10 2015-07-16 Aixtron Se Gaseinlassorgan eines CVD-Reaktors mit gewichtsverminderter Gasaustrittsplatte

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3927133A1 (de) * 1989-08-17 1991-02-21 Philips Patentverwaltung Verfahren zur abscheidung mikrokristalliner festkoerperpartikel aus der gasphase mittels chemical vapour deposition
GB2241250A (en) * 1990-01-26 1991-08-28 Fuji Electric Co Ltd RF plasma CVD employing an electrode with a shower supply surface
JP2837993B2 (ja) * 1992-06-19 1998-12-16 松下電工株式会社 プラズマ処理方法およびその装置
US5595602A (en) * 1995-08-14 1997-01-21 Motorola, Inc. Diffuser for uniform gas distribution in semiconductor processing and method for using the same
JP3310171B2 (ja) * 1996-07-17 2002-07-29 松下電器産業株式会社 プラズマ処理装置
JP4422295B2 (ja) * 2000-05-17 2010-02-24 キヤノンアネルバ株式会社 Ｃｖｄ装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117004928A (zh) * 2023-09-21 2023-11-07 上海谙邦半导体设备有限公司 一种化学气相沉积晶圆保护系统
CN117004928B (zh) * 2023-09-21 2023-12-26 上海谙邦半导体设备有限公司 一种化学气相沉积晶圆保护系统

Also Published As

Publication number Publication date
AU2003212349A1 (en) 2003-09-29
EP1485518A1 (de) 2004-12-15
WO2003078681A1 (de) 2003-09-25
DE10211442A1 (de) 2003-09-25
JP2005520932A (ja) 2005-07-14
KR20040101261A (ko) 2004-12-02

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