JP2022105278A - コーティング装置およびそのキャリヤ受座 - Google Patents
コーティング装置およびそのキャリヤ受座 Download PDFInfo
- Publication number
- JP2022105278A JP2022105278A JP2021203430A JP2021203430A JP2022105278A JP 2022105278 A JP2022105278 A JP 2022105278A JP 2021203430 A JP2021203430 A JP 2021203430A JP 2021203430 A JP2021203430 A JP 2021203430A JP 2022105278 A JP2022105278 A JP 2022105278A
- Authority
- JP
- Japan
- Prior art keywords
- shell
- space
- plate
- carrier seat
- carrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000576 coating method Methods 0.000 title claims abstract description 24
- 239000011248 coating agent Substances 0.000 title claims abstract description 21
- 238000007789 sealing Methods 0.000 claims description 15
- 230000004888 barrier function Effects 0.000 claims description 4
- 239000012530 fluid Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 22
- 238000010438 heat treatment Methods 0.000 description 10
- 230000001052 transient effect Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 3
- 240000001973 Ficus microcarpa Species 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
- C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Coating Apparatus (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
【解決手段】本発明は、コーティング装置であって、頂部分(102)および側部分(103)を備えた第1のシェル(101)と、第1のシェルの頂部分から少なくとも部分的に下方に末広がりに延びる状態で第1のシェル内に収容された第2のシェル(109)とを有し、第1のシェルと第2のシェルとの間には第1の空間が画定され、第2のシェルは、第2の空間を画定し、第1の空間は、第2の空間を包囲し、第1のシェルと第2のシェルは、互いに流体連通していない。
【選択図】図1
Description
102 頂部分
103 側部分
104 底
105 開口部
106 入口ユニット
107 排気ユニット
108 排気ユニット
109 第2のシェル
110 頂部分
111 底部分
112,113 加熱ユニット
114 チャネル受座
115 底部プレート
116 穴
117 加熱ユニット
200 キャリヤ受座
201 支持ポスト
202 キャリヤプレート
203 上方に向いた表面
204 支持部分
205 ガスケット
206 ベント
300 キャリヤ受座
304 支持部分
400 キャリヤ受座
403 上方に向いた表面
404 支持部分
405 プレート
500 第2のシェル
501 ガスキャリヤプレート
600 第2のシェル
700 第2のシェル
L 物体
D 直径
Claims (10)
- コーティング装置であって、
頂部分および側部分を備えた第1のシェルと、
前記第1のシェルの前記頂部分から少なくとも部分的に下方に末広がりに延びる状態で前記第1のシェル内に収容された第2のシェルとを有し、
前記第1のシェルと前記第2のシェルとの間には第1の空間が画定され、前記第2のシェルは、第2の空間を画定し、前記第1の空間は、前記第2の空間を包囲し、前記第1のシェルと前記第2のシェルは、互いに流体連通していない、コーティング装置。 - 前記第2のシェルは、頂部分および底部分を有し、前記第2のシェルの前記頂部分は、直径を有し、前記第2のシェルの前記底部分は、直径を有し、前記第2のシェルの直径は、前記頂部分から前記底部分に向かう方向に増大している、請求項1記載のコーティング装置。
- 前記第1のシェルの前記側部分は、壁マウントを有し、前記第2のシェルの前記底部分は、前記壁マウント上に載っている、請求項1記載のコーティング装置。
- 前記第1の空間は、大気温度に維持され、前記第2の空間は、コーティングのために用いられる反応領域である、請求項1記載のコーティング装置。
- 前記第2のシェルの前記頂部分は、ガスチャネルを有し、前記ガスチャネルの下流側は、ガスを分散させるためのガスバリヤプレートを備えている、請求項1記載のコーティング装置。
- コーティングされる物体を担持するキャリヤ受座であって、前記キャリヤ受座は、第1のシェル内で昇降するよう構成され、前記キャリヤ受座は、
頂部分を備えていて該頂部分からガスを提供するよう構成された支持ポストと、
前記支持ポストの前記頂部分に連結されたキャリヤプレートとを有し、前記キャリヤプレートは、上方に向いた表面および前記上方に向いた表面から上方に延びていて前記物体を支持する支持部分を有し、前記上方に向いた表面は、前記ガスを供給するよう構成された少なくとも1つの空気入口および前記キャリヤプレートの前記上方に向いた表面から外側まで延びる複数のベントを有し、
前記上方に向いた表面と前記支持部分と前記物体との間には、排気経路が画定され、前記ガスは、前記排気経路を通って前記空気入口から前記複数のベントまで流れる、キャリヤ受座。 - 前記支持部分は、ガスケットを有し、前記ガスケットの内側は、前記物体に接触する傾斜面を備えている、請求項6記載のキャリヤ受座。
- 傾斜面が前記支持部分と前記上方に向いた表面との間に形成されている、請求項6記載のキャリヤ受座。
- 前記支持部分は、プレートであり、前記プレートには、複数の物体を受け入れる複数の中空部が形成されている、請求項6記載のキャリヤ受座。
- 前記支持ポストは、封止プレートを有し、前記第1のシェルの第1の側部分は、壁マウントを備え、前記封止プレートは、前記キャリヤ受座が前記封止プレートによって封止されている反応領域に入るような高さに支持ポストが配置されたときに前記壁マウントに接触するよう構成されている、請求項6記載のキャリヤ受座。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011627010.X | 2020-12-31 | ||
CN202011627010.XA CN112853316B (zh) | 2020-12-31 | 2020-12-31 | 镀膜装置及其承载座 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2022105278A true JP2022105278A (ja) | 2022-07-13 |
JP7329034B2 JP7329034B2 (ja) | 2023-08-17 |
Family
ID=75999547
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021203430A Active JP7329034B2 (ja) | 2020-12-31 | 2021-12-15 | コーティング装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US12043897B2 (ja) |
JP (1) | JP7329034B2 (ja) |
KR (1) | KR20220097237A (ja) |
CN (1) | CN112853316B (ja) |
TW (1) | TWI796823B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116288269A (zh) * | 2023-02-20 | 2023-06-23 | 拓荆科技(上海)有限公司 | 一种薄膜沉积设备和一种薄膜沉积方法 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07245298A (ja) * | 1991-10-23 | 1995-09-19 | F T L:Kk | 半導体装置の製造方法及び半導体製造装置 |
JP2003045808A (ja) * | 2001-07-30 | 2003-02-14 | Tokyo Electron Ltd | 縦型熱処理装置および縦型熱処理方法 |
JP2004006794A (ja) * | 2002-04-12 | 2004-01-08 | Asm Japan Kk | 枚葉式cvd装置及び方法 |
JP2005347772A (ja) * | 2005-08-05 | 2005-12-15 | Ftl:Kk | 半導体装置の製造方法 |
JP2007522681A (ja) * | 2004-02-13 | 2007-08-09 | エーエスエム アメリカ インコーポレイテッド | オートドーピングおよび裏面堆積を減少させるための基板支持システム |
JP2011144091A (ja) * | 2010-01-18 | 2011-07-28 | Shin Etsu Handotai Co Ltd | 気相成長用サセプタ及び気相成長方法 |
JP2017183393A (ja) * | 2016-03-29 | 2017-10-05 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及びプログラム |
JP2018165395A (ja) * | 2017-03-28 | 2018-10-25 | 昭和電工株式会社 | 熱化学蒸着装置の基板ホルダー |
WO2020260742A1 (en) * | 2019-06-25 | 2020-12-30 | Picosun Oy | Substrate backside protection |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5558717A (en) * | 1994-11-30 | 1996-09-24 | Applied Materials | CVD Processing chamber |
JP3556804B2 (ja) * | 1997-05-20 | 2004-08-25 | 東京エレクトロン株式会社 | 処理装置及び処理方法 |
US6462310B1 (en) * | 1998-08-12 | 2002-10-08 | Asml Us, Inc | Hot wall rapid thermal processor |
JP2003203868A (ja) * | 2002-01-07 | 2003-07-18 | Hitachi Kokusai Electric Inc | 半導体製造装置 |
US20070137794A1 (en) * | 2003-09-24 | 2007-06-21 | Aviza Technology, Inc. | Thermal processing system with across-flow liner |
US7408225B2 (en) * | 2003-10-09 | 2008-08-05 | Asm Japan K.K. | Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms |
US7419702B2 (en) * | 2004-03-31 | 2008-09-02 | Tokyo Electron Limited | Method for processing a substrate |
US20070187386A1 (en) * | 2006-02-10 | 2007-08-16 | Poongsan Microtec Corporation | Methods and apparatuses for high pressure gas annealing |
CN101772833B (zh) * | 2008-02-20 | 2012-04-18 | 东京毅力科创株式会社 | 气体供给装置 |
JP4564570B2 (ja) * | 2009-03-10 | 2010-10-20 | 三井造船株式会社 | 原子層堆積装置 |
CN102080210B (zh) * | 2009-11-30 | 2013-04-10 | 鸿富锦精密工业(深圳)有限公司 | 蒸镀装置 |
US20120312234A1 (en) * | 2011-06-11 | 2012-12-13 | Tokyo Electron Limited | Process gas diffuser assembly for vapor deposition system |
DE102012100927A1 (de) * | 2012-02-06 | 2013-08-08 | Roth & Rau Ag | Prozessmodul |
JP6107327B2 (ja) * | 2013-03-29 | 2017-04-05 | 東京エレクトロン株式会社 | 成膜装置及びガス供給装置並びに成膜方法 |
US20160010207A1 (en) * | 2013-04-03 | 2016-01-14 | Dongjun Wang | Plasma-Enhanced Atomic-Layer Deposition System and Method |
JP2015137416A (ja) * | 2014-01-24 | 2015-07-30 | 富士フイルム株式会社 | 蒸着用タブレットおよび有機材料の蒸着装置 |
US10253412B2 (en) * | 2015-05-22 | 2019-04-09 | Lam Research Corporation | Deposition apparatus including edge plenum showerhead assembly |
US10851457B2 (en) * | 2017-08-31 | 2020-12-01 | Lam Research Corporation | PECVD deposition system for deposition on selective side of the substrate |
CN110828271A (zh) * | 2018-08-07 | 2020-02-21 | 北京北方华创微电子装备有限公司 | 反应腔室及半导体加工设备 |
TWI685059B (zh) * | 2018-12-11 | 2020-02-11 | 財團法人國家實驗研究院 | 半導體反應裝置與方法 |
KR102269348B1 (ko) * | 2019-04-04 | 2021-06-28 | (주)아이작리서치 | 후면 증착 방지용 서셉터 및 이를 구비하는 증착 장치 |
-
2020
- 2020-12-31 CN CN202011627010.XA patent/CN112853316B/zh active Active
-
2021
- 2021-11-03 TW TW110140940A patent/TWI796823B/zh active
- 2021-12-10 KR KR1020210176389A patent/KR20220097237A/ko not_active Application Discontinuation
- 2021-12-14 US US17/550,522 patent/US12043897B2/en active Active
- 2021-12-15 JP JP2021203430A patent/JP7329034B2/ja active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07245298A (ja) * | 1991-10-23 | 1995-09-19 | F T L:Kk | 半導体装置の製造方法及び半導体製造装置 |
JP2003045808A (ja) * | 2001-07-30 | 2003-02-14 | Tokyo Electron Ltd | 縦型熱処理装置および縦型熱処理方法 |
JP2004006794A (ja) * | 2002-04-12 | 2004-01-08 | Asm Japan Kk | 枚葉式cvd装置及び方法 |
JP2007522681A (ja) * | 2004-02-13 | 2007-08-09 | エーエスエム アメリカ インコーポレイテッド | オートドーピングおよび裏面堆積を減少させるための基板支持システム |
JP2005347772A (ja) * | 2005-08-05 | 2005-12-15 | Ftl:Kk | 半導体装置の製造方法 |
JP2011144091A (ja) * | 2010-01-18 | 2011-07-28 | Shin Etsu Handotai Co Ltd | 気相成長用サセプタ及び気相成長方法 |
JP2017183393A (ja) * | 2016-03-29 | 2017-10-05 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及びプログラム |
JP2018165395A (ja) * | 2017-03-28 | 2018-10-25 | 昭和電工株式会社 | 熱化学蒸着装置の基板ホルダー |
WO2020260742A1 (en) * | 2019-06-25 | 2020-12-30 | Picosun Oy | Substrate backside protection |
Also Published As
Publication number | Publication date |
---|---|
CN112853316B (zh) | 2023-03-14 |
TW202227662A (zh) | 2022-07-16 |
US20220205092A1 (en) | 2022-06-30 |
US12043897B2 (en) | 2024-07-23 |
KR20220097237A (ko) | 2022-07-07 |
TWI796823B (zh) | 2023-03-21 |
JP7329034B2 (ja) | 2023-08-17 |
CN112853316A (zh) | 2021-05-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102222947B1 (ko) | 화학 증착 장치 | |
US10570508B2 (en) | Film forming apparatus, film forming method and heat insulating member | |
KR102312248B1 (ko) | 화학 증착 장치 | |
KR101645262B1 (ko) | 가스 분산 장치 | |
TWI404818B (zh) | 反應室蓋板可降低之cvd反應器 | |
TW201945580A (zh) | 基材製程裝置及方法 | |
US6849241B2 (en) | Device and method for depositing one or more layers on a substrate | |
KR101204614B1 (ko) | 가스 공급 장치, 성막 장치, 및 성막 방법 | |
US6599367B1 (en) | Vacuum processing apparatus | |
TWI482205B (zh) | 具圓柱形進氣機構之mocvd反應器 | |
JP2013543932A (ja) | 温度勾配を高めた化学気相成長(tge−cvd) | |
KR20100072180A (ko) | 기판 탑재 기구 및 기판 처리 장치 | |
JP2011500961A (ja) | 化学気相成長反応器 | |
JP2009088473A (ja) | 成膜装置、成膜方法及び記憶媒体 | |
US20050045100A1 (en) | Reactors, systems with reaction chambers, and methods for depositing materials onto micro-device workpieces | |
CN105861991A (zh) | 一种线性加热源 | |
JP2022105278A (ja) | コーティング装置およびそのキャリヤ受座 | |
WO2012153591A1 (ja) | 成膜装置 | |
TWI461568B (zh) | 熱梯度加強化學氣相沈積 | |
TW201341586A (zh) | 具有遮擋板裝置的反應器 | |
KR101523357B1 (ko) | 반도체 소자 형성 장치 및 반도체 소자 형성 방법 | |
CN115928050A (zh) | 一种横流式薄膜沉积反应器 | |
KR20120122516A (ko) | 수평 흐름 원자층 증착 장치 | |
TWI837843B (zh) | 加熱裝置、化學氣相沉積設備及吹掃方法 | |
KR100749632B1 (ko) | 반도체 제조용 웨이퍼박막 형성장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220125 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20230113 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230125 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20230421 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230512 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230706 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230804 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7329034 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |