PL2304075T3 - Reaktor CVD do osadzania warstw z mieszaniny gazów reakcyjnych na przedmiotach obrabianych - Google Patents

Reaktor CVD do osadzania warstw z mieszaniny gazów reakcyjnych na przedmiotach obrabianych

Info

Publication number
PL2304075T3
PL2304075T3 PL09780878T PL09780878T PL2304075T3 PL 2304075 T3 PL2304075 T3 PL 2304075T3 PL 09780878 T PL09780878 T PL 09780878T PL 09780878 T PL09780878 T PL 09780878T PL 2304075 T3 PL2304075 T3 PL 2304075T3
Authority
PL
Poland
Prior art keywords
vapor deposition
chemical vapor
gas mixture
reaction gas
layers made
Prior art date
Application number
PL09780878T
Other languages
English (en)
Inventor
Michael Auger
Renato Bonetti
Hristo Strakov
Original Assignee
Ihi Ionbond Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ihi Ionbond Ag filed Critical Ihi Ionbond Ag
Publication of PL2304075T3 publication Critical patent/PL2304075T3/pl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/36—Carbonitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Chemical Vapour Deposition (AREA)
PL09780878T 2008-07-23 2009-07-21 Reaktor CVD do osadzania warstw z mieszaniny gazów reakcyjnych na przedmiotach obrabianych PL2304075T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008034330A DE102008034330A1 (de) 2008-07-23 2008-07-23 CVD-Reaktor zur Abscheidung von Schichten aus einem Reaktionsgasgemisch auf Werkstücken
EP09780878.6A EP2304075B1 (de) 2008-07-23 2009-07-21 Cvd-reaktor zur abscheidung von schichten aus einem reaktionsgasgemisch auf werkstücken
PCT/EP2009/059360 WO2010010088A1 (de) 2008-07-23 2009-07-21 Cvd-reaktor zur abscheidung von schichten aus einem reaktionsgasgemisch auf werkstücken

Publications (1)

Publication Number Publication Date
PL2304075T3 true PL2304075T3 (pl) 2015-08-31

Family

ID=41171067

Family Applications (1)

Application Number Title Priority Date Filing Date
PL09780878T PL2304075T3 (pl) 2008-07-23 2009-07-21 Reaktor CVD do osadzania warstw z mieszaniny gazów reakcyjnych na przedmiotach obrabianych

Country Status (11)

Country Link
US (1) US9297070B2 (pl)
EP (1) EP2304075B1 (pl)
JP (1) JP5612574B2 (pl)
CN (1) CN102165099B (pl)
DE (1) DE102008034330A1 (pl)
DK (1) DK2304075T3 (pl)
ES (1) ES2543732T3 (pl)
PL (1) PL2304075T3 (pl)
PT (1) PT2304075E (pl)
SI (1) SI2304075T1 (pl)
WO (1) WO2010010088A1 (pl)

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DE102008034330A1 (de) * 2008-07-23 2010-01-28 Ionbond Ag Olten CVD-Reaktor zur Abscheidung von Schichten aus einem Reaktionsgasgemisch auf Werkstücken
DE102010000479A1 (de) 2010-02-19 2011-08-25 Aixtron Ag, 52134 Vorrichtung zur Homogenisierung eines verdampften Aerosols sowie Vorrichtung zum Abscheiden einer organischen Schicht auf einem Substrat mit einer derartigen Homogenisierungseinrichtung
EP2465972B1 (en) * 2010-12-15 2017-05-03 NCD Co., Ltd. Method and system for thin film deposition
CN102191484A (zh) * 2011-06-28 2011-09-21 上海宏力半导体制造有限公司 反应气体源喷射管、炉管以及半导体制造装置
CN103160799A (zh) * 2011-12-19 2013-06-19 同方威视技术股份有限公司 中子敏感镀膜及其形成方法
CN103361633B (zh) * 2012-04-01 2015-07-01 北京北方微电子基地设备工艺研究中心有限责任公司 一种进气装置、反应腔室以及等离子体加工设备
JP6511798B2 (ja) * 2014-12-22 2019-05-15 三菱マテリアル株式会社 化学蒸着装置、化学蒸着方法
JP6358420B2 (ja) * 2014-01-10 2018-07-18 三菱マテリアル株式会社 減圧式縦型化学蒸着装置及び化学蒸着方法
WO2015105177A1 (ja) 2014-01-10 2015-07-16 三菱マテリアル株式会社 化学蒸着装置、および化学蒸着方法
DE102014205426A1 (de) * 2014-03-24 2015-09-24 Siemens Aktiengesellschaft Gestell zur Halterung von Bauteilen
CN106233213B (zh) * 2014-04-16 2018-12-21 三菱电机株式会社 指令值生成装置
CN106191808B (zh) * 2016-09-05 2019-01-01 江苏协鑫特种材料科技有限公司 一种化学气相沉积反应器
CN109857171A (zh) * 2017-11-30 2019-06-07 中国科学院大连化学物理研究所 一种应用于酯化反应的多区域自适应温控装置
CN108315689B (zh) * 2018-01-10 2024-04-19 东莞市柯霖金属材料表面技术有限公司 一种td处理工艺
US12233433B2 (en) * 2018-04-27 2025-02-25 Raytheon Company Uniform thin film deposition for poly-p-xylylene
JP7285318B2 (ja) 2018-09-28 2023-06-01 コーニング インコーポレイテッド オーステナイト変態温度未満での無機粒子の堆積のための方法、及びこの方法によって製造される物品
CN109554686B (zh) * 2018-12-11 2023-09-22 广东双虹新材料科技有限公司 一种常压多层cvd反应器
TWI710674B (zh) * 2019-04-10 2020-11-21 長生太陽能股份有限公司 爐管及多晶矽成長方法
CN111996512B (zh) * 2020-09-30 2025-01-24 常州艾恩希纳米镀膜科技有限公司 一种用于cvd涂层设备的铝反应器
CN112813262A (zh) * 2021-03-26 2021-05-18 遵义钛业股份有限公司 一种用于镁还原法生产海绵钛的装置
CN119013431A (zh) 2022-02-24 2024-11-22 Ihi伯尔纳股份公司 化学气相沉积设备
CN116575015A (zh) * 2023-01-18 2023-08-11 株洲瑞德尔智能装备有限公司 一种沉积设备的进气结构及cvd沉积设备

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Also Published As

Publication number Publication date
CN102165099A (zh) 2011-08-24
PT2304075E (pt) 2015-07-28
EP2304075B1 (de) 2015-03-25
ES2543732T3 (es) 2015-08-21
US20110185973A1 (en) 2011-08-04
SI2304075T1 (sl) 2015-07-31
DE102008034330A1 (de) 2010-01-28
CN102165099B (zh) 2015-08-19
JP5612574B2 (ja) 2014-10-22
WO2010010088A1 (de) 2010-01-28
JP2011528753A (ja) 2011-11-24
DK2304075T3 (en) 2015-06-29
US9297070B2 (en) 2016-03-29
EP2304075A1 (de) 2011-04-06

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