CN106191808B - 一种化学气相沉积反应器 - Google Patents
一种化学气相沉积反应器 Download PDFInfo
- Publication number
- CN106191808B CN106191808B CN201610805996.2A CN201610805996A CN106191808B CN 106191808 B CN106191808 B CN 106191808B CN 201610805996 A CN201610805996 A CN 201610805996A CN 106191808 B CN106191808 B CN 106191808B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
- C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610805996.2A CN106191808B (zh) | 2016-09-05 | 2016-09-05 | 一种化学气相沉积反应器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610805996.2A CN106191808B (zh) | 2016-09-05 | 2016-09-05 | 一种化学气相沉积反应器 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106191808A CN106191808A (zh) | 2016-12-07 |
CN106191808B true CN106191808B (zh) | 2019-01-01 |
Family
ID=58067264
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610805996.2A Active CN106191808B (zh) | 2016-09-05 | 2016-09-05 | 一种化学气相沉积反应器 |
Country Status (1)
Country | Link |
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CN (1) | CN106191808B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111411344A (zh) * | 2020-03-30 | 2020-07-14 | 于伟华 | 一种制备碳化硅致密复合材料的方法 |
CN111320492B (zh) * | 2020-03-30 | 2023-09-05 | 于伟华 | 一种耐火材料表面沉积碳化硅的装置 |
CN112225585B (zh) * | 2020-09-30 | 2022-05-20 | 中钢新型材料股份有限公司 | 一种石墨件表面沉积碳化硅涂层工艺 |
CN114182232A (zh) * | 2021-11-16 | 2022-03-15 | 维达力实业(深圳)有限公司 | 一种热解石墨气相沉积装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060185590A1 (en) * | 2005-02-18 | 2006-08-24 | General Electric Company | High temperature chemical vapor deposition apparatus |
US20090004405A1 (en) * | 2007-06-29 | 2009-01-01 | Applied Materials, Inc. | Thermal Batch Reactor with Removable Susceptors |
JP5141155B2 (ja) * | 2007-09-21 | 2013-02-13 | 東京エレクトロン株式会社 | 成膜装置 |
DE102008034330A1 (de) * | 2008-07-23 | 2010-01-28 | Ionbond Ag Olten | CVD-Reaktor zur Abscheidung von Schichten aus einem Reaktionsgasgemisch auf Werkstücken |
US9303318B2 (en) * | 2011-10-20 | 2016-04-05 | Applied Materials, Inc. | Multiple complementary gas distribution assemblies |
JP5539436B2 (ja) * | 2012-04-26 | 2014-07-02 | パナソニック株式会社 | プラズマ処理装置及びプラズマ処理方法 |
CN202954089U (zh) * | 2012-12-06 | 2013-05-29 | 光达光电设备科技(嘉兴)有限公司 | 化学气相沉积设备及其用于该设备的承载机构 |
CN105632968A (zh) * | 2014-10-30 | 2016-06-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 工艺腔室和半导体加工设备 |
CN104477899B (zh) * | 2014-12-12 | 2016-05-25 | 重庆墨希科技有限公司 | 一种制备石墨烯的夹具以及制备石墨烯的方法 |
CN206015085U (zh) * | 2016-09-05 | 2017-03-15 | 江苏协鑫特种材料科技有限公司 | 一种化学气相沉积反应器 |
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2016
- 2016-09-05 CN CN201610805996.2A patent/CN106191808B/zh active Active
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Publication number | Publication date |
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CN106191808A (zh) | 2016-12-07 |
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Address after: 221000 No.66, Yangshan Road, economic and Technological Development Zone, Gulou District, Xuzhou City, Jiangsu Province Patentee after: JIANGSU GCL SPECIAL MATERIAL TECHNOLOGY CO.,LTD. Patentee after: Jiangsu Xinhua Semiconductor Technology Co.,Ltd. Address before: 221000 No.66, Yangshan Road, economic and Technological Development Zone, Gulou District, Xuzhou City, Jiangsu Province Patentee before: JIANGSU GCL SPECIAL MATERIAL TECHNOLOGY CO.,LTD. Patentee before: JIANGSU XINHUA SEMICONDUCTOR MATERIALS TECHNOLOGY CO.,LTD. |
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