FR2963024B1 - Reacteur de depot chimique en phase gazeuse ameliore - Google Patents
Reacteur de depot chimique en phase gazeuse amelioreInfo
- Publication number
- FR2963024B1 FR2963024B1 FR1003120A FR1003120A FR2963024B1 FR 2963024 B1 FR2963024 B1 FR 2963024B1 FR 1003120 A FR1003120 A FR 1003120A FR 1003120 A FR1003120 A FR 1003120A FR 2963024 B1 FR2963024 B1 FR 2963024B1
- Authority
- FR
- France
- Prior art keywords
- gas phase
- chemical deposition
- deposition reactor
- phase chemical
- enhanced gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005234 chemical deposition Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45504—Laminar flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Fluid Mechanics (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1003120A FR2963024B1 (fr) | 2010-07-26 | 2010-07-26 | Reacteur de depot chimique en phase gazeuse ameliore |
PCT/FR2011/000406 WO2012013869A1 (fr) | 2010-07-26 | 2011-07-11 | Réacteur de dépôt chimique en phase gazeuse amélioré |
DE112011102504T DE112011102504T5 (de) | 2010-07-26 | 2011-07-11 | Verbesserter Reaktor zur chemischen Gasphasenabscheidung |
US13/812,204 US20130125819A1 (en) | 2010-07-26 | 2011-07-11 | Chemical gas deposition reactor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1003120A FR2963024B1 (fr) | 2010-07-26 | 2010-07-26 | Reacteur de depot chimique en phase gazeuse ameliore |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2963024A1 FR2963024A1 (fr) | 2012-01-27 |
FR2963024B1 true FR2963024B1 (fr) | 2016-12-23 |
Family
ID=43552276
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1003120A Active FR2963024B1 (fr) | 2010-07-26 | 2010-07-26 | Reacteur de depot chimique en phase gazeuse ameliore |
Country Status (4)
Country | Link |
---|---|
US (1) | US20130125819A1 (fr) |
DE (1) | DE112011102504T5 (fr) |
FR (1) | FR2963024B1 (fr) |
WO (1) | WO2012013869A1 (fr) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101408084B1 (ko) * | 2011-11-17 | 2014-07-04 | 주식회사 유진테크 | 보조가스공급포트를 포함하는 기판 처리 장치 |
KR101364701B1 (ko) * | 2011-11-17 | 2014-02-20 | 주식회사 유진테크 | 위상차를 갖는 반응가스를 공급하는 기판 처리 장치 |
FR2987937B1 (fr) | 2012-03-12 | 2014-03-28 | Altatech Semiconductor | Procede de realisation de plaquettes semi-conductrices |
US11414759B2 (en) * | 2013-11-29 | 2022-08-16 | Taiwan Semiconductor Manufacturing Co., Ltd | Mechanisms for supplying process gas into wafer process apparatus |
KR102350588B1 (ko) * | 2015-07-07 | 2022-01-14 | 삼성전자 주식회사 | 인젝터를 갖는 박막 형성 장치 |
US10260149B2 (en) | 2016-04-28 | 2019-04-16 | Applied Materials, Inc. | Side inject nozzle design for processing chamber |
WO2020046567A1 (fr) | 2018-08-29 | 2020-03-05 | Applied Materials, Inc. | Injecteur de chambre |
CN111455458B (zh) * | 2019-09-18 | 2021-11-16 | 北京北方华创微电子装备有限公司 | 外延装置及应用于外延装置的进气结构 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4800105A (en) * | 1986-07-22 | 1989-01-24 | Nihon Shinku Gijutsu Kabushiki Kaisha | Method of forming a thin film by chemical vapor deposition |
JPH03236221A (ja) * | 1990-02-14 | 1991-10-22 | Fujitsu Ltd | 気相成長装置 |
JPH08139034A (ja) * | 1994-11-07 | 1996-05-31 | Nissin Electric Co Ltd | 薄膜気相成長装置 |
JP3498617B2 (ja) * | 1999-02-04 | 2004-02-16 | 松下電器産業株式会社 | ガス導入管及びこれを用いた薄膜成長装置 |
US6770144B2 (en) * | 2000-07-25 | 2004-08-03 | International Business Machines Corporation | Multideposition SACVD reactor |
US6927140B2 (en) * | 2002-08-21 | 2005-08-09 | Intel Corporation | Method for fabricating a bipolar transistor base |
US20050287806A1 (en) * | 2004-06-24 | 2005-12-29 | Hiroyuki Matsuura | Vertical CVD apparatus and CVD method using the same |
JP2006176826A (ja) * | 2004-12-22 | 2006-07-06 | Canon Anelva Corp | 薄膜処理装置 |
US20080220150A1 (en) * | 2007-03-05 | 2008-09-11 | Applied Materials, Inc. | Microbatch deposition chamber with radiant heating |
US8298338B2 (en) * | 2007-12-26 | 2012-10-30 | Samsung Electronics Co., Ltd. | Chemical vapor deposition apparatus |
JP2010141223A (ja) * | 2008-12-15 | 2010-06-24 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び基板処理装置 |
-
2010
- 2010-07-26 FR FR1003120A patent/FR2963024B1/fr active Active
-
2011
- 2011-07-11 WO PCT/FR2011/000406 patent/WO2012013869A1/fr active Application Filing
- 2011-07-11 DE DE112011102504T patent/DE112011102504T5/de not_active Withdrawn
- 2011-07-11 US US13/812,204 patent/US20130125819A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
FR2963024A1 (fr) | 2012-01-27 |
DE112011102504T5 (de) | 2013-05-16 |
WO2012013869A1 (fr) | 2012-02-02 |
US20130125819A1 (en) | 2013-05-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2963024B1 (fr) | Reacteur de depot chimique en phase gazeuse ameliore | |
PL2665692T3 (pl) | Katalityczne fluorowanie w fazie gazowej | |
PL2665693T3 (pl) | Fluorowanie katalityczne w fazie gazowej | |
SMT201600293B (it) | Composti chimici | |
BR112014005898A2 (pt) | catalisador de conversão de hidrocarbonetos | |
EP2549868A4 (fr) | Composés chimiques | |
GB201016855D0 (en) | Chemical compounds | |
HK1190979A1 (en) | Gas conversion system | |
EP2441085A4 (fr) | Système de dépôt chimique en phase vapeur cylindre-sur-cylindre | |
IT1401192B1 (it) | Reattore a membrana per il trattamento di gas contenenti trizio | |
FI20105201A0 (fi) | Menetelmä kaasutuskaasun reformoimiseksi | |
HUE044637T2 (hu) | Katalizátor és eljárás klór elõállítására gáz fázisú oxidálással | |
GB201008290D0 (en) | Chemical compounds | |
GB201018624D0 (en) | Reaction vessel | |
IT1403457B1 (it) | Reattore meccano-chimico perfezionato | |
AP3640A (en) | Catalytic process for the conversion of a synthesis gas to hydrocarbons | |
ITRM20110639A1 (it) | Serbatoio per il gas. | |
ZA201303900B (en) | Conversion of natuaral gas | |
GB2489362B (en) | Process for the conversion of synthesis gas | |
EP2572015A4 (fr) | Dépôt chimique en phase vapeur de couches métalliques pour brasage amélioré | |
DK2399668T3 (da) | Fremgangsmåde til omsætning af især gasformige reaktionsmedier | |
DK2477971T3 (da) | Fremgangsmåde til syntese af 5-amino-1-phenyl-3-cyan-4-triflourmethylsulfinylpyrazol | |
GB201018340D0 (en) | Chemical compounds | |
TWM389120U (en) | Chemical vapor deposition reactor | |
BRPI1105257A2 (pt) | processamento de gás de hidrocarbonetos |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 7 |
|
PLFP | Fee payment |
Year of fee payment: 8 |
|
CA | Change of address |
Effective date: 20180330 |
|
CD | Change of name or company name |
Owner name: UNITY SEMICONDUCTOR, FR Effective date: 20180330 |
|
PLFP | Fee payment |
Year of fee payment: 9 |
|
TP | Transmission of property |
Owner name: KOBUS SAS, FR Effective date: 20180719 |
|
PLFP | Fee payment |
Year of fee payment: 11 |
|
PLFP | Fee payment |
Year of fee payment: 12 |
|
PLFP | Fee payment |
Year of fee payment: 13 |
|
PLFP | Fee payment |
Year of fee payment: 14 |