FR2987937B1 - Procede de realisation de plaquettes semi-conductrices - Google Patents

Procede de realisation de plaquettes semi-conductrices

Info

Publication number
FR2987937B1
FR2987937B1 FR1200753A FR1200753A FR2987937B1 FR 2987937 B1 FR2987937 B1 FR 2987937B1 FR 1200753 A FR1200753 A FR 1200753A FR 1200753 A FR1200753 A FR 1200753A FR 2987937 B1 FR2987937 B1 FR 2987937B1
Authority
FR
France
Prior art keywords
semiconductor wafers
making semiconductor
making
wafers
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1200753A
Other languages
English (en)
Other versions
FR2987937A1 (fr
Inventor
Julien Vitiello
Jean Luc Delcarri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kobus SAS
Original Assignee
Altatech Semiconductor
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1200753A priority Critical patent/FR2987937B1/fr
Application filed by Altatech Semiconductor filed Critical Altatech Semiconductor
Priority to KR1020147028221A priority patent/KR20150013445A/ko
Priority to DE112013001383.5T priority patent/DE112013001383T5/de
Priority to US14/382,731 priority patent/US20150031202A1/en
Priority to CN201380013617.0A priority patent/CN104247004A/zh
Priority to PCT/FR2013/050491 priority patent/WO2013135999A1/fr
Priority to SG11201405664PA priority patent/SG11201405664PA/en
Publication of FR2987937A1 publication Critical patent/FR2987937A1/fr
Application granted granted Critical
Publication of FR2987937B1 publication Critical patent/FR2987937B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
FR1200753A 2012-03-12 2012-03-12 Procede de realisation de plaquettes semi-conductrices Active FR2987937B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR1200753A FR2987937B1 (fr) 2012-03-12 2012-03-12 Procede de realisation de plaquettes semi-conductrices
DE112013001383.5T DE112013001383T5 (de) 2012-03-12 2013-03-08 Verfahren zur Herstellung von Halbleiterwafern
US14/382,731 US20150031202A1 (en) 2012-03-12 2013-03-08 Method for manufacturing semiconductor wafers
CN201380013617.0A CN104247004A (zh) 2012-03-12 2013-03-08 半导体晶片的制作方法
KR1020147028221A KR20150013445A (ko) 2012-03-12 2013-03-08 반도체 웨이퍼들을 제조하기 위한 방법
PCT/FR2013/050491 WO2013135999A1 (fr) 2012-03-12 2013-03-08 Procédé de réalisation de plaquettes semi-conductrices
SG11201405664PA SG11201405664PA (en) 2012-03-12 2013-03-08 Method for manufacturing semiconductor wafers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1200753A FR2987937B1 (fr) 2012-03-12 2012-03-12 Procede de realisation de plaquettes semi-conductrices

Publications (2)

Publication Number Publication Date
FR2987937A1 FR2987937A1 (fr) 2013-09-13
FR2987937B1 true FR2987937B1 (fr) 2014-03-28

Family

ID=47002907

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1200753A Active FR2987937B1 (fr) 2012-03-12 2012-03-12 Procede de realisation de plaquettes semi-conductrices

Country Status (7)

Country Link
US (1) US20150031202A1 (fr)
KR (1) KR20150013445A (fr)
CN (1) CN104247004A (fr)
DE (1) DE112013001383T5 (fr)
FR (1) FR2987937B1 (fr)
SG (1) SG11201405664PA (fr)
WO (1) WO2013135999A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105140267A (zh) * 2015-07-29 2015-12-09 浙江大学 半导体衬底及选择性生长半导体的方法
US10096516B1 (en) * 2017-08-18 2018-10-09 Applied Materials, Inc. Method of forming a barrier layer for through via applications
DE102019006097A1 (de) * 2019-08-29 2021-03-04 Azur Space Solar Power Gmbh Passivierungsverfahren für ein Durchgangsloch einer Halbleiterscheibe
US11289370B2 (en) 2020-03-02 2022-03-29 Nanya Technology Corporation Liner for through-silicon via

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5807785A (en) * 1996-08-02 1998-09-15 Applied Materials, Inc. Low dielectric constant silicon dioxide sandwich layer
US6114216A (en) * 1996-11-13 2000-09-05 Applied Materials, Inc. Methods for shallow trench isolation
US20050136684A1 (en) 2003-12-23 2005-06-23 Applied Materials, Inc. Gap-fill techniques
JP4376715B2 (ja) * 2004-07-16 2009-12-02 三洋電機株式会社 半導体装置の製造方法
US7429529B2 (en) * 2005-08-05 2008-09-30 Farnworth Warren M Methods of forming through-wafer interconnects and structures resulting therefrom
WO2008083284A2 (fr) * 2006-12-29 2008-07-10 Cufer Asset Ltd. L.L.C. Tranche traitée au niveau de l'extrémité frontale ayant des connexions traversant les puces
KR100840665B1 (ko) * 2007-05-18 2008-06-24 주식회사 동부하이텍 반도체 소자의 제조방법 및 이를 이용한 시스템 인 패키지
CN101728283A (zh) * 2008-10-16 2010-06-09 上海华虹Nec电子有限公司 芯片互联工艺中芯片互联通孔的制备方法
CN102054752A (zh) * 2009-11-03 2011-05-11 中芯国际集成电路制造(上海)有限公司 硅通孔制作方法
US20120015113A1 (en) * 2010-07-13 2012-01-19 Applied Materials, Inc. Methods for forming low stress dielectric films
FR2963024B1 (fr) 2010-07-26 2016-12-23 Altatech Semiconductor Reacteur de depot chimique en phase gazeuse ameliore
US8487410B2 (en) * 2011-04-13 2013-07-16 Taiwan Semiconductor Manufacturing Company, Ltd. Through-silicon vias for semicondcutor substrate and method of manufacture

Also Published As

Publication number Publication date
DE112013001383T5 (de) 2014-11-27
CN104247004A (zh) 2014-12-24
WO2013135999A1 (fr) 2013-09-19
US20150031202A1 (en) 2015-01-29
FR2987937A1 (fr) 2013-09-13
KR20150013445A (ko) 2015-02-05
SG11201405664PA (en) 2014-10-30

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