WO2010101369A3 - 가스 분배 장치 및 이를 구비하는 기판 처리 장치 - Google Patents

가스 분배 장치 및 이를 구비하는 기판 처리 장치 Download PDF

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Publication number
WO2010101369A3
WO2010101369A3 PCT/KR2010/001209 KR2010001209W WO2010101369A3 WO 2010101369 A3 WO2010101369 A3 WO 2010101369A3 KR 2010001209 W KR2010001209 W KR 2010001209W WO 2010101369 A3 WO2010101369 A3 WO 2010101369A3
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WO
WIPO (PCT)
Prior art keywords
gas distribution
substrate
processing apparatus
same
distribution unit
Prior art date
Application number
PCT/KR2010/001209
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English (en)
French (fr)
Other versions
WO2010101369A2 (ko
Inventor
최선홍
이승호
이영희
Original Assignee
주성엔지니어링㈜
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020090018083A external-priority patent/KR20100099535A/ko
Priority claimed from KR1020100014446A external-priority patent/KR20110021624A/ko
Application filed by 주성엔지니어링㈜ filed Critical 주성엔지니어링㈜
Priority to JP2011552876A priority Critical patent/JP2012519956A/ja
Priority to US12/746,505 priority patent/US20110048325A1/en
Priority to CN2010800033950A priority patent/CN102239543A/zh
Publication of WO2010101369A2 publication Critical patent/WO2010101369A2/ko
Publication of WO2010101369A3 publication Critical patent/WO2010101369A3/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles

Abstract

본 발명은 가스 분배 장치 및 이를 구비하는 기판 처리 장치에 관한 것으로, 적어도 2가지 이상의 공정 가스를 각기 다른 루트를 통해 기판 상으로 분사하는 제 1 가스 분배부와, 적어도 2가지 이상의 공정 가스들의 분해 온도의 평균보다 그 분해 온도가 높은 공정 가스를 기판 상으로 분사하는 제 2 가스 분배부를 포함하고, 제 1 가스 분배부는 적어도 둘 이상으로 분할되어 제 2 가스 분배부를 중심으로 배치되고 결합 및 분리가 가능한 가스 분배 장치 및 이를 구비하는 기판 처리 장치를 제공한다.
PCT/KR2010/001209 2009-03-03 2010-02-26 가스 분배 장치 및 이를 구비하는 기판 처리 장치 WO2010101369A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011552876A JP2012519956A (ja) 2009-03-03 2010-02-26 ガス分配装置およびこれを備える基板処理装置
US12/746,505 US20110048325A1 (en) 2009-03-03 2010-02-26 Gas Distribution Apparatus and Substrate Processing Apparatus Having the Same
CN2010800033950A CN102239543A (zh) 2009-03-03 2010-02-26 气体分配装置及具有其的基板处理装置

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR1020090018083A KR20100099535A (ko) 2009-03-03 2009-03-03 기판처리장치 및 그의 제조방법
KR10-2009-0018083 2009-03-03
KR10-2009-0079174 2009-08-26
KR20090079174 2009-08-26
KR10-2010-0014446 2010-02-18
KR1020100014446A KR20110021624A (ko) 2009-08-26 2010-02-18 원료 물질 공급 장치 및 이를 구비하는 기판 처리 장치

Publications (2)

Publication Number Publication Date
WO2010101369A2 WO2010101369A2 (ko) 2010-09-10
WO2010101369A3 true WO2010101369A3 (ko) 2010-11-25

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PCT/KR2010/001209 WO2010101369A2 (ko) 2009-03-03 2010-02-26 가스 분배 장치 및 이를 구비하는 기판 처리 장치

Country Status (2)

Country Link
US (1) US20110048325A1 (ko)
WO (1) WO2010101369A2 (ko)

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