JP2011238942A5 - - Google Patents

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JP2011238942A5
JP2011238942A5 JP2011138418A JP2011138418A JP2011238942A5 JP 2011238942 A5 JP2011238942 A5 JP 2011238942A5 JP 2011138418 A JP2011138418 A JP 2011138418A JP 2011138418 A JP2011138418 A JP 2011138418A JP 2011238942 A5 JP2011238942 A5 JP 2011238942A5
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area
contact
pixel
light sensor
irradiation light
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JP2011138418A
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JP2011238942A (ja
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Priority claimed from US10/453,037 external-priority patent/US7012314B2/en
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JP2011138418A 2002-12-18 2011-06-22 能動領域の欠陥が低減されユニークな接触スキームを有する半導体デバイス Pending JP2011238942A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US43435902P 2002-12-18 2002-12-18
US60/434,359 2002-12-18
US10/453,037 2003-06-03
US10/453,037 US7012314B2 (en) 2002-12-18 2003-06-03 Semiconductor devices with reduced active region defects and unique contacting schemes

Related Parent Applications (1)

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JP2005508542A Division JP5489387B2 (ja) 2002-12-18 2003-11-26 能動領域の欠陥が低減されユニークな接触スキームを有する半導体デバイス

Publications (2)

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JP2011238942A JP2011238942A (ja) 2011-11-24
JP2011238942A5 true JP2011238942A5 (https=) 2012-10-25

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JP2005508542A Expired - Fee Related JP5489387B2 (ja) 2002-12-18 2003-11-26 能動領域の欠陥が低減されユニークな接触スキームを有する半導体デバイス
JP2011138418A Pending JP2011238942A (ja) 2002-12-18 2011-06-22 能動領域の欠陥が低減されユニークな接触スキームを有する半導体デバイス

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JP2005508542A Expired - Fee Related JP5489387B2 (ja) 2002-12-18 2003-11-26 能動領域の欠陥が低減されユニークな接触スキームを有する半導体デバイス

Country Status (8)

Country Link
US (2) US7012314B2 (https=)
EP (1) EP1573790B1 (https=)
JP (2) JP5489387B2 (https=)
KR (1) KR20050093785A (https=)
AU (1) AU2003303492A1 (https=)
DE (1) DE60310762T2 (https=)
TW (1) TWI232544B (https=)
WO (1) WO2004061911A2 (https=)

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