JP2011237807A - 液晶表示装置用薄膜トランジスタ基板及びその製造方法 - Google Patents
液晶表示装置用薄膜トランジスタ基板及びその製造方法 Download PDFInfo
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 81
- 238000004519 manufacturing process Methods 0.000 title abstract description 54
- 239000010409 thin film Substances 0.000 title description 74
- 238000000034 method Methods 0.000 title description 35
- 239000000758 substrate Substances 0.000 claims abstract description 87
- 230000001681 protective effect Effects 0.000 claims description 55
- 239000004065 semiconductor Substances 0.000 claims description 35
- 230000007547 defect Effects 0.000 abstract description 12
- 239000010408 film Substances 0.000 description 118
- 239000010410 layer Substances 0.000 description 78
- 239000000463 material Substances 0.000 description 38
- 229910021417 amorphous silicon Inorganic materials 0.000 description 37
- 239000004020 conductor Substances 0.000 description 22
- 238000005530 etching Methods 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 238000003860 storage Methods 0.000 description 9
- 239000011651 chromium Substances 0.000 description 7
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 244000144972 livestock Species 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
【解決手段】液晶表示装置は、絶縁基板と、絶縁基板の上に位置するゲート線と、ゲート線を覆っているゲート絶縁膜30と、ゲート絶縁膜上に位置し、ドレーン電極とデータ線とを含むデータ配線と、データ配線を覆っている保護膜70と、保護膜の上に位置してデータ配線と電気的に連結されている画素電極80とを含み、ゲート絶縁膜は第1開口部を有し、保護膜は第2開口部と接触口72とを含み、第2開口部は前記第1開口部を露出させ、第1開口部と前記第2開口部は画素の縁領域に位置し、接触口72は前記ドレーン電極の一部分を露出させる。
【選択図】図14
Description
データパッド部において、ゲート絶縁膜30の上にはクロム(Cr)などから構成されるデータパッド64が形成されている。このデータパッド64と同一な物質から構成される連結パターン63が接触口36を通してゲートパッド26と連結されるように形成されている。
C1= (C2×C3)/(C2+C3) (1)
である。この時、整列パターン68とデータ線62との間の距離は3μmから5μmの範囲であるのに比べて整列パターン68と画素電極80との間の距離は0.2μm程度であり、整列パターン68と画素電極80とは一部が重畳しているので画素電極80と整列パターン68との間の静電容量 C2に比べて整列パターン68とデータ線62との間の静電容量 C3が非常に小さい。前記式(1)で、画素電極80と整列パターン68との間の静電容量 C2より整列パターン68とデータ線62との間の静電容量 C3の大きさが非常に小さい場合、画素電極80とデータ線62との間の結合静電容量 C1は、凡そ整列パターン68とデータ線62との間の静電容量 C3と同一であるということができる。結局、整列パターン68とデータ線62との間の静電容量 C3によって画素電極80とデータ線62との間の結合静電容量 C1が決定される。さらに、データ線62と整列パターン68との間には整列誤差が発生する恐れがないので基板10の全面にわたってデータ線62と画素電極80との間の結合静電容量は一定になり、従って、ステッチ不良が発生しない。
24 ゲート電極
26 ゲートパッド
30 ゲート絶縁膜
40 非晶質珪素層
55、56 抵抗性接触層
62 データ線
64 データパッド
65 ソース電極
66 ドレーン電極
70 保護膜
72、74、76 接触口
78 開口部
79 隙間
80 画素電極
84、86 補助パッドパターン
Claims (6)
- 絶縁基板と、
絶縁基板の上に位置するゲート線と、
前記ゲート線を覆っているゲート絶縁膜と、
前記ゲート絶縁膜上に位置し、ドレーン電極とデータ線とを含むデータ配線と、
前記データ配線を覆っている保護膜と、
前記保護膜の上に位置して前記データ配線と電気的に連結されている画素電極とを含み、
前記ゲート絶縁膜は第1開口部を有し、前記保護膜は第2開口部と接触口とを含み、
前記第2開口部は前記第1開口部を露出させ、
前記第1開口部と前記第2開口部は画素の縁領域に位置し、
前記接触口は前記ドレーン電極の一部分を露出させることを特徴とする液晶表示装置。 - 整列パターンをさらに含み、
前記第2開口部の少なくとも一部分は前記データ線と前記整列パターンとの間に位置することを特徴とする請求項1に記載の液晶表示装置。 - 前記第2開口部の少なくとも一部分は前記ゲート線と前記画素電極との間に位置することを特徴とする請求項1または2に記載の液晶表示装置。
- 前記第1開口部と前記第2開口部は互いに重畳し、
前記第1開口部と前記第2開口部の重畳する部分は前記画素電極の少なくとも一部分と重畳することを特徴とする請求項1〜3のいずれかに記載の液晶表示装置。 - 前記第1開口部と前記第2開口部は実質的に同一の面積を有することを特徴とする請求項1〜4のいずれかに記載の液晶表示装置。
- 前記ゲート絶縁膜の上に位置する半導体パターンと、
前記半導体パターンの上に位置して、前記ドレーン電極と対向するソース電極を更に含むことを特徴とする請求項1〜5のいずれかに記載の液晶表示装置。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1998P50877 | 1998-11-26 | ||
KR1019980050877A KR100601163B1 (ko) | 1998-11-26 | 1998-11-26 | 액정 표시 장치용 박막 트랜지스터 기판 및 그제조 방법 |
KR1019990051376A KR100656904B1 (ko) | 1999-11-18 | 1999-11-18 | 액정 표시 장치용 박막 트랜지스터 기판 |
KR1999P51376 | 1999-11-18 |
Related Parent Applications (1)
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JP33689899A Division JP4796221B2 (ja) | 1998-11-26 | 1999-11-26 | 液晶表示装置用薄膜トランジスタ基板及びその製造方法 |
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JP2011237807A true JP2011237807A (ja) | 2011-11-24 |
JP5379824B2 JP5379824B2 (ja) | 2013-12-25 |
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JP33689899A Expired - Lifetime JP4796221B2 (ja) | 1998-11-26 | 1999-11-26 | 液晶表示装置用薄膜トランジスタ基板及びその製造方法 |
JP2011126883A Expired - Lifetime JP5379824B2 (ja) | 1998-11-26 | 2011-06-07 | 液晶表示装置用薄膜トランジスタ基板及びその製造方法 |
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JP33689899A Expired - Lifetime JP4796221B2 (ja) | 1998-11-26 | 1999-11-26 | 液晶表示装置用薄膜トランジスタ基板及びその製造方法 |
Country Status (2)
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US (1) | US6798442B1 (ja) |
JP (2) | JP4796221B2 (ja) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100381054B1 (ko) * | 1999-12-28 | 2003-04-18 | 엘지.필립스 엘시디 주식회사 | 인듐-징크-옥사이드로 적용된 투명전극과 이를 에칭하기위한 에천트 |
KR100646792B1 (ko) * | 2000-07-27 | 2006-11-17 | 삼성전자주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
JP4342711B2 (ja) * | 2000-09-20 | 2009-10-14 | 株式会社日立製作所 | 液晶表示装置の製造方法 |
US6734463B2 (en) * | 2001-05-23 | 2004-05-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising a window |
KR100488146B1 (ko) * | 2002-04-15 | 2005-05-06 | 엘지전자 주식회사 | 유기 전계발광소자 및 그 제조방법 |
KR100905470B1 (ko) * | 2002-11-20 | 2009-07-02 | 삼성전자주식회사 | 박막 트랜지스터 어레이 기판 |
KR100926433B1 (ko) * | 2002-12-31 | 2009-11-12 | 엘지디스플레이 주식회사 | 액정 표시 장치 및 그 제조 방법 |
KR100997968B1 (ko) * | 2003-10-13 | 2010-12-02 | 삼성전자주식회사 | 박막 트랜지스터 표시판의 제조 방법 |
KR101090245B1 (ko) * | 2003-12-10 | 2011-12-06 | 삼성전자주식회사 | 박막 트랜지스터 표시판 |
KR101090246B1 (ko) * | 2003-12-10 | 2011-12-06 | 삼성전자주식회사 | 박막 트랜지스터 표시판 |
US7495257B2 (en) | 2003-12-26 | 2009-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US7274044B2 (en) | 2004-01-26 | 2007-09-25 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US7315047B2 (en) | 2004-01-26 | 2008-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
TWI268616B (en) * | 2004-05-14 | 2006-12-11 | Nec Lcd Technologies Ltd | Active matrix substrate and method of manufacturing the same |
KR101107677B1 (ko) * | 2004-12-02 | 2012-01-25 | 엘지디스플레이 주식회사 | 액정표시소자의 제조방법 |
JP4837942B2 (ja) * | 2005-05-25 | 2011-12-14 | シャープ株式会社 | 液晶表示装置 |
JP4552780B2 (ja) * | 2005-07-04 | 2010-09-29 | エプソンイメージングデバイス株式会社 | 電気光学装置及び電子機器 |
JP5087825B2 (ja) * | 2005-07-27 | 2012-12-05 | カシオ計算機株式会社 | アクティブ基板の製造方法 |
US8450738B2 (en) | 2007-12-19 | 2013-05-28 | Sharp Kabushiki Kaisha | Active matrix substrate, production method of the same, liquid crystal panel, liquid crystal display device, liquid crystal display unit, and television receiver |
JP6122275B2 (ja) * | 2011-11-11 | 2017-04-26 | 株式会社半導体エネルギー研究所 | 表示装置 |
CN103337500B (zh) | 2013-05-24 | 2015-12-23 | 友达光电股份有限公司 | 主动元件阵列基板及其制造方法 |
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JP3407596B2 (ja) * | 1997-04-17 | 2003-05-19 | セイコーエプソン株式会社 | 液晶表示装置の製造方法 |
KR100262953B1 (ko) * | 1997-06-11 | 2000-08-01 | 구본준 | 액정 표시 장치 및 그 액정 표시 장치의 제조 방법 |
KR100271037B1 (ko) * | 1997-09-05 | 2000-11-01 | 구본준, 론 위라하디락사 | 액정 표시 장치의 구조 및 그 액정 표시 장치의 제조 방법(liquid crystal display device and the method for manufacturing the same) |
JP3463006B2 (ja) * | 1998-10-26 | 2003-11-05 | シャープ株式会社 | 液晶表示装置の製造方法および液晶表示装置 |
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1999
- 1999-11-26 JP JP33689899A patent/JP4796221B2/ja not_active Expired - Lifetime
- 1999-11-29 US US09/450,333 patent/US6798442B1/en not_active Expired - Lifetime
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2011
- 2011-06-07 JP JP2011126883A patent/JP5379824B2/ja not_active Expired - Lifetime
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Also Published As
Publication number | Publication date |
---|---|
JP2000162647A (ja) | 2000-06-16 |
JP4796221B2 (ja) | 2011-10-19 |
US6798442B1 (en) | 2004-09-28 |
JP5379824B2 (ja) | 2013-12-25 |
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