JP2011077535A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2011077535A5 JP2011077535A5 JP2010259096A JP2010259096A JP2011077535A5 JP 2011077535 A5 JP2011077535 A5 JP 2011077535A5 JP 2010259096 A JP2010259096 A JP 2010259096A JP 2010259096 A JP2010259096 A JP 2010259096A JP 2011077535 A5 JP2011077535 A5 JP 2011077535A5
- Authority
- JP
- Japan
- Prior art keywords
- conductive layer
- field effect
- effect transistor
- layer
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 claims 17
- 239000004065 semiconductor Substances 0.000 claims 15
- 238000000034 method Methods 0.000 claims 12
- 238000004519 manufacturing process Methods 0.000 claims 11
- 150000002894 organic compounds Chemical class 0.000 claims 11
- 239000000758 substrate Substances 0.000 claims 6
- 239000013078 crystal Substances 0.000 claims 4
- 239000002253 acid Substances 0.000 claims 3
- 239000000463 material Substances 0.000 claims 3
- 150000001875 compounds Chemical class 0.000 claims 2
- 239000002245 particle Substances 0.000 claims 2
- 150000003839 salts Chemical class 0.000 claims 2
- MCVVDMSWCQUKEV-UHFFFAOYSA-N (2-nitrophenyl)methyl 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)OCC1=CC=CC=C1[N+]([O-])=O MCVVDMSWCQUKEV-UHFFFAOYSA-N 0.000 claims 1
- FNDFKMXAOATGJU-UHFFFAOYSA-N 1-phenyl-2-sulfonylethanone Chemical class O=S(=O)=CC(=O)C1=CC=CC=C1 FNDFKMXAOATGJU-UHFFFAOYSA-N 0.000 claims 1
- 125000005410 aryl sulfonium group Chemical group 0.000 claims 1
- 229920000547 conjugated polymer Polymers 0.000 claims 1
- 230000005525 hole transport Effects 0.000 claims 1
- -1 p-nitrobenzyl ester Chemical class 0.000 claims 1
- 239000002861 polymer material Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010259096A JP5268197B2 (ja) | 2004-10-22 | 2010-11-19 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004308838 | 2004-10-22 | ||
| JP2004308838 | 2004-10-22 | ||
| JP2010259096A JP5268197B2 (ja) | 2004-10-22 | 2010-11-19 | 半導体装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005304375A Division JP4767653B2 (ja) | 2004-10-22 | 2005-10-19 | 半導体装置及び無線チップ |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011077535A JP2011077535A (ja) | 2011-04-14 |
| JP2011077535A5 true JP2011077535A5 (enExample) | 2011-05-26 |
| JP5268197B2 JP5268197B2 (ja) | 2013-08-21 |
Family
ID=36203026
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010259096A Expired - Fee Related JP5268197B2 (ja) | 2004-10-22 | 2010-11-19 | 半導体装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US7781758B2 (enExample) |
| JP (1) | JP5268197B2 (enExample) |
| KR (1) | KR101258672B1 (enExample) |
| CN (1) | CN101044624A (enExample) |
| TW (1) | TWI434411B (enExample) |
| WO (1) | WO2006043611A1 (enExample) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100557813C (zh) | 2004-10-18 | 2009-11-04 | 株式会社半导体能源研究所 | 半导体器件及其驱动方法 |
| KR101258672B1 (ko) | 2004-10-22 | 2013-04-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 |
| US7935958B2 (en) * | 2004-10-22 | 2011-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2006057417A1 (en) * | 2004-11-26 | 2006-06-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR101169262B1 (ko) * | 2004-12-03 | 2012-08-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| EP1854140A4 (en) * | 2005-02-10 | 2008-06-04 | Semiconductor Energy Lab | MEMORY ELEMENT AND SEMICONDUCTOR DEVICE |
| US7926726B2 (en) * | 2005-03-28 | 2011-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Survey method and survey system |
| US7700984B2 (en) | 2005-05-20 | 2010-04-20 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device including memory cell |
| US7868320B2 (en) | 2005-05-31 | 2011-01-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| KR101369864B1 (ko) | 2005-08-12 | 2014-03-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 및 그 제조방법 |
| US7935957B2 (en) * | 2005-08-12 | 2011-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and a semiconductor device |
| US7912439B2 (en) | 2005-11-25 | 2011-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and operating method thereof |
| CN101401209B (zh) * | 2006-03-10 | 2011-05-25 | 株式会社半导体能源研究所 | 存储元件以及半导体器件 |
| EP1850378A3 (en) * | 2006-04-28 | 2013-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and semicondutor device |
| US7719001B2 (en) | 2006-06-28 | 2010-05-18 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device with metal oxides and an organic compound |
| US7988057B2 (en) | 2006-11-28 | 2011-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and semiconductor device |
| KR101485926B1 (ko) * | 2007-02-02 | 2015-02-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 기억장치 |
| US8283724B2 (en) | 2007-02-26 | 2012-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Memory element and semiconductor device, and method for manufacturing the same |
| USD645029S1 (en) * | 2008-05-09 | 2011-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Antenna |
| USD602922S1 (en) * | 2008-05-09 | 2009-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Contactless data carrier |
| WO2009145062A1 (en) | 2008-05-16 | 2009-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, and electronic device |
| USD605642S1 (en) * | 2008-09-10 | 2009-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Contactless data carrier |
| CN102770903B (zh) * | 2010-02-26 | 2015-10-07 | 株式会社半导体能源研究所 | 显示装置及具备该显示装置的电子书阅读器 |
| US9698129B2 (en) | 2011-03-18 | 2017-07-04 | Johnson & Johnson Vision Care, Inc. | Stacked integrated component devices with energization |
| US10451897B2 (en) | 2011-03-18 | 2019-10-22 | Johnson & Johnson Vision Care, Inc. | Components with multiple energization elements for biomedical devices |
| US8857983B2 (en) | 2012-01-26 | 2014-10-14 | Johnson & Johnson Vision Care, Inc. | Ophthalmic lens assembly having an integrated antenna structure |
| US9715130B2 (en) | 2014-08-21 | 2017-07-25 | Johnson & Johnson Vision Care, Inc. | Methods and apparatus to form separators for biocompatible energization elements for biomedical devices |
| US10381687B2 (en) | 2014-08-21 | 2019-08-13 | Johnson & Johnson Vision Care, Inc. | Methods of forming biocompatible rechargable energization elements for biomedical devices |
| US9793536B2 (en) | 2014-08-21 | 2017-10-17 | Johnson & Johnson Vision Care, Inc. | Pellet form cathode for use in a biocompatible battery |
| US10361404B2 (en) | 2014-08-21 | 2019-07-23 | Johnson & Johnson Vision Care, Inc. | Anodes for use in biocompatible energization elements |
| US10361405B2 (en) | 2014-08-21 | 2019-07-23 | Johnson & Johnson Vision Care, Inc. | Biomedical energization elements with polymer electrolytes |
| US10627651B2 (en) | 2014-08-21 | 2020-04-21 | Johnson & Johnson Vision Care, Inc. | Methods and apparatus to form biocompatible energization primary elements for biomedical devices with electroless sealing layers |
| US9599842B2 (en) | 2014-08-21 | 2017-03-21 | Johnson & Johnson Vision Care, Inc. | Device and methods for sealing and encapsulation for biocompatible energization elements |
| US9941547B2 (en) | 2014-08-21 | 2018-04-10 | Johnson & Johnson Vision Care, Inc. | Biomedical energization elements with polymer electrolytes and cavity structures |
| US9383593B2 (en) | 2014-08-21 | 2016-07-05 | Johnson & Johnson Vision Care, Inc. | Methods to form biocompatible energization elements for biomedical devices comprising laminates and placed separators |
| JP1555473S (enExample) * | 2015-10-26 | 2016-08-08 | ||
| JP1555474S (enExample) * | 2015-10-26 | 2016-08-08 | ||
| US10345620B2 (en) | 2016-02-18 | 2019-07-09 | Johnson & Johnson Vision Care, Inc. | Methods and apparatus to form biocompatible energization elements incorporating fuel cells for biomedical devices |
Family Cites Families (57)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3833894A (en) | 1973-06-20 | 1974-09-03 | Ibm | Organic memory device |
| US4115872A (en) * | 1977-05-31 | 1978-09-19 | Burroughs Corporation | Amorphous semiconductor memory device for employment in an electrically alterable read-only memory |
| US4177475A (en) * | 1977-10-31 | 1979-12-04 | Burroughs Corporation | High temperature amorphous memory device for an electrically alterable read-only memory |
| IL61671A (en) | 1979-12-13 | 1984-04-30 | Energy Conversion Devices Inc | Diode and rom or eeprom devices using it |
| IL61678A (en) | 1979-12-13 | 1984-04-30 | Energy Conversion Devices Inc | Programmable cell and programmable electronic arrays comprising such cells |
| US4499557A (en) | 1980-10-28 | 1985-02-12 | Energy Conversion Devices, Inc. | Programmable cell for use in programmable electronic arrays |
| JP2982286B2 (ja) | 1990-10-30 | 1999-11-22 | オムロン株式会社 | データキャリア |
| US5375250A (en) | 1992-07-13 | 1994-12-20 | Van Den Heuvel; Raymond C. | Method of intelligent computing and neural-like processing of time and space functions |
| JPH06232271A (ja) | 1993-01-29 | 1994-08-19 | Nippon Telegr & Teleph Corp <Ntt> | 結線材料及び入出力制御方法 |
| TW287313B (enExample) | 1995-02-20 | 1996-10-01 | Matsushita Electric Industrial Co Ltd | |
| US6340588B1 (en) | 1995-04-25 | 2002-01-22 | Discovery Partners International, Inc. | Matrices with memories |
| WO1997030445A1 (en) | 1996-02-16 | 1997-08-21 | Philips Electronics N.V. | Write-once read-many electrical memory element of a conjugated polymer or oligomer |
| NO973993L (no) | 1997-09-01 | 1999-03-02 | Opticom As | Leseminne og leseminneinnretninger |
| JP3761300B2 (ja) | 1997-09-30 | 2006-03-29 | 株式会社東芝 | シフトレジスター型記憶素子 |
| JP2000113152A (ja) | 1998-10-05 | 2000-04-21 | Hitachi Maxell Ltd | 非接触メモリ素子を内蔵した磁気ストライプテープ及びそれを利用して製造されたicカード及びicタグ |
| US6498240B1 (en) * | 1999-09-17 | 2002-12-24 | Millipore Corporation | Method for sequencing reaction cleanup by constant pressure diffential ultrafiltration |
| US6509217B1 (en) | 1999-10-22 | 2003-01-21 | Damoder Reddy | Inexpensive, reliable, planar RFID tag structure and method for making same |
| JP2001189431A (ja) * | 1999-12-28 | 2001-07-10 | Seiko Epson Corp | メモリのセル構造及びメモリデバイス |
| WO2001073845A1 (en) | 2000-03-28 | 2001-10-04 | Koninklijke Philips Electronics N.V. | Integrated circuit with programmable memory element |
| JP2001345431A (ja) | 2000-05-31 | 2001-12-14 | Japan Science & Technology Corp | 有機強誘電体薄膜及び半導体デバイス |
| WO2001099193A1 (fr) | 2000-06-21 | 2001-12-27 | Hitachi Maxell, Ltd. | Puce de semi-conducteur et dispositif semi-conducteur l'utilisant |
| JP3377786B2 (ja) | 2000-06-21 | 2003-02-17 | 日立マクセル株式会社 | 半導体チップ |
| JP2002026283A (ja) * | 2000-06-30 | 2002-01-25 | Seiko Epson Corp | 多層構造のメモリ装置及びその製造方法 |
| AU2001265068A1 (en) | 2000-10-31 | 2002-05-15 | The Regents Of The University Of California | Organic bistable device and organic memory cells |
| SG117406A1 (en) | 2001-03-19 | 2005-12-29 | Miconductor Energy Lab Co Ltd | Method of manufacturing a semiconductor device |
| WO2002091384A1 (en) * | 2001-05-07 | 2002-11-14 | Advanced Micro Devices, Inc. | A memory device with a self-assembled polymer film and method of making the same |
| JP2003007982A (ja) | 2001-06-22 | 2003-01-10 | Nec Corp | 磁気記憶装置及び磁気記憶装置の設計方法 |
| US7116593B2 (en) | 2002-02-01 | 2006-10-03 | Hitachi, Ltd. | Storage device |
| JP2003243631A (ja) * | 2002-02-18 | 2003-08-29 | Mitsubishi Electric Corp | 薄膜磁性体記憶装置ならびにそれを用いた無線チップ、流通管理システムおよび製造工程管理システム |
| US6683322B2 (en) | 2002-03-01 | 2004-01-27 | Hewlett-Packard Development Company, L.P. | Flexible hybrid memory element |
| TWI223569B (en) * | 2002-03-20 | 2004-11-01 | Sanyo Electric Co | Method for reducing light quantity of organic EL panel and organic EL panel |
| JP3940014B2 (ja) | 2002-03-29 | 2007-07-04 | 富士通株式会社 | 半導体集積回路、無線タグ、および非接触型icカード |
| JP4539007B2 (ja) | 2002-05-09 | 2010-09-08 | 日本電気株式会社 | 半導体記憶装置 |
| US6847541B2 (en) * | 2002-06-07 | 2005-01-25 | Mitsubishi Chemical Corporation | Information storage device, and information storage method and information regeneration method employing the information storage device |
| US6828685B2 (en) | 2002-06-14 | 2004-12-07 | Hewlett-Packard Development Company, L.P. | Memory device having a semiconducting polymer film |
| JP2004128471A (ja) * | 2002-08-07 | 2004-04-22 | Canon Inc | 不揮発メモリ装置 |
| US6847047B2 (en) | 2002-11-04 | 2005-01-25 | Advanced Micro Devices, Inc. | Methods that facilitate control of memory arrays utilizing zener diode-like devices |
| JP4509467B2 (ja) | 2002-11-08 | 2010-07-21 | シャープ株式会社 | 不揮発可変抵抗素子、及び記憶装置 |
| JP2004185755A (ja) | 2002-12-05 | 2004-07-02 | Sharp Corp | 不揮発性半導体記憶装置 |
| US7220985B2 (en) | 2002-12-09 | 2007-05-22 | Spansion, Llc | Self aligned memory element and wordline |
| JP4101643B2 (ja) * | 2002-12-26 | 2008-06-18 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4671600B2 (ja) * | 2002-12-27 | 2011-04-20 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4323813B2 (ja) | 2003-01-14 | 2009-09-02 | キヤノン株式会社 | 基板の製造方法 |
| US20040152276A1 (en) | 2003-01-14 | 2004-08-05 | Naoki Nishimura | Device, and substrate on which circuit and antenna are formed |
| JPWO2004073079A1 (ja) | 2003-02-14 | 2006-06-01 | 富士電機ホールディングス株式会社 | スイッチング素子 |
| US7973313B2 (en) | 2003-02-24 | 2011-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Thin film integrated circuit device, IC label, container comprising the thin film integrated circuit, manufacturing method of the thin film integrated circuit device, manufacturing method of the container, and management method of product having the container |
| JP4566578B2 (ja) | 2003-02-24 | 2010-10-20 | 株式会社半導体エネルギー研究所 | 薄膜集積回路の作製方法 |
| US6977389B2 (en) | 2003-06-02 | 2005-12-20 | Advanced Micro Devices, Inc. | Planar polymer memory device |
| US7050326B2 (en) | 2003-10-07 | 2006-05-23 | Hewlett-Packard Development Company, L.P. | Magnetic memory device with current carrying reference layer |
| DE10355561A1 (de) | 2003-11-28 | 2005-06-30 | Infineon Technologies Ag | Halbleiteranordnung mit nichtflüchtigen Speichern |
| JP2005183619A (ja) | 2003-12-18 | 2005-07-07 | Canon Inc | 不揮発メモリ装置 |
| WO2005096380A1 (en) | 2004-04-02 | 2005-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method of the same |
| CN100557813C (zh) | 2004-10-18 | 2009-11-04 | 株式会社半导体能源研究所 | 半导体器件及其驱动方法 |
| KR101258672B1 (ko) | 2004-10-22 | 2013-04-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 |
| US7935958B2 (en) | 2004-10-22 | 2011-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2006057417A1 (en) | 2004-11-26 | 2006-06-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8188461B2 (en) | 2005-05-31 | 2012-05-29 | Semiconductor Energy Laboratory Co., Ltd. | Organic memory device |
-
2005
- 2005-10-13 KR KR1020077010486A patent/KR101258672B1/ko not_active Expired - Fee Related
- 2005-10-13 WO PCT/JP2005/019253 patent/WO2006043611A1/en not_active Ceased
- 2005-10-13 CN CNA2005800361121A patent/CN101044624A/zh active Pending
- 2005-10-13 US US11/587,441 patent/US7781758B2/en not_active Expired - Fee Related
- 2005-10-20 TW TW094136697A patent/TWI434411B/zh not_active IP Right Cessation
-
2010
- 2010-07-30 US US12/847,352 patent/US8227802B2/en not_active Expired - Fee Related
- 2010-11-19 JP JP2010259096A patent/JP5268197B2/ja not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2011077535A5 (enExample) | ||
| JP2010153813A5 (ja) | 発光装置 | |
| JP2006148080A5 (enExample) | ||
| JP2013042154A5 (enExample) | ||
| JP2013251255A5 (enExample) | ||
| JP2012118545A5 (enExample) | ||
| JP2012209275A5 (ja) | 自発光装置の作製方法 | |
| JP2013047808A5 (ja) | 表示装置 | |
| JP2012068629A5 (ja) | 発光表示装置、及び発光表示装置の作製方法 | |
| JP2011238908A5 (ja) | 発光装置、表示モジュール及び電子機器 | |
| JP2012068627A5 (ja) | 半導体装置の作製方法 | |
| JP2013211573A5 (enExample) | ||
| JP2012084859A5 (ja) | 半導体装置及びその作製方法 | |
| JP2015072485A5 (ja) | 発光装置または電子機器 | |
| JP2015213072A5 (ja) | 表示装置の作製方法 | |
| JP2014032415A5 (ja) | 液晶表示装置 | |
| JP2013041287A5 (enExample) | ||
| JP2012078847A5 (ja) | 半導体装置、表示装置、電子機器、半導体装置の作製方法 | |
| JP2013084968A5 (enExample) | ||
| WO2012012691A3 (en) | Nonvolatile flash memory structures including fullerene molecules and methods for manufacturing the same | |
| JP2012084865A5 (ja) | 半導体装置の作製方法 | |
| JP2010098304A5 (enExample) | ||
| JP2012150479A5 (ja) | 表示装置及び電子機器 | |
| JP2012238610A5 (enExample) | ||
| JP2012160477A5 (enExample) |