KR101258672B1 - 반도체장치 - Google Patents

반도체장치 Download PDF

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Publication number
KR101258672B1
KR101258672B1 KR1020077010486A KR20077010486A KR101258672B1 KR 101258672 B1 KR101258672 B1 KR 101258672B1 KR 1020077010486 A KR1020077010486 A KR 1020077010486A KR 20077010486 A KR20077010486 A KR 20077010486A KR 101258672 B1 KR101258672 B1 KR 101258672B1
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KR
South Korea
Prior art keywords
conductive layer
layer
organic compound
field effect
effect transistor
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Expired - Fee Related
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KR1020077010486A
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English (en)
Korean (ko)
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KR20070067706A (ko
Inventor
히로코 아베
유지 이와키
미키오 유카와
순페이 야마자키
야스유키 아라이
야스코 와타나베
요시타카 모리야
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20070067706A publication Critical patent/KR20070067706A/ko
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Publication of KR101258672B1 publication Critical patent/KR101258672B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/20—Organic diodes
    • H10K10/23—Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/611—Charge transfer complexes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
KR1020077010486A 2004-10-22 2005-10-13 반도체장치 Expired - Fee Related KR101258672B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004308838 2004-10-22
JPJP-P-2004-00308838 2004-10-22
PCT/JP2005/019253 WO2006043611A1 (en) 2004-10-22 2005-10-13 Semiconductor device

Publications (2)

Publication Number Publication Date
KR20070067706A KR20070067706A (ko) 2007-06-28
KR101258672B1 true KR101258672B1 (ko) 2013-04-26

Family

ID=36203026

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077010486A Expired - Fee Related KR101258672B1 (ko) 2004-10-22 2005-10-13 반도체장치

Country Status (6)

Country Link
US (2) US7781758B2 (enExample)
JP (1) JP5268197B2 (enExample)
KR (1) KR101258672B1 (enExample)
CN (1) CN101044624A (enExample)
TW (1) TWI434411B (enExample)
WO (1) WO2006043611A1 (enExample)

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CN100557813C (zh) 2004-10-18 2009-11-04 株式会社半导体能源研究所 半导体器件及其驱动方法
KR101258672B1 (ko) 2004-10-22 2013-04-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
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KR101169262B1 (ko) * 2004-12-03 2012-08-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
EP1854140A4 (en) * 2005-02-10 2008-06-04 Semiconductor Energy Lab MEMORY ELEMENT AND SEMICONDUCTOR DEVICE
US7926726B2 (en) * 2005-03-28 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Survey method and survey system
US7700984B2 (en) 2005-05-20 2010-04-20 Semiconductor Energy Laboratory Co., Ltd Semiconductor device including memory cell
US7868320B2 (en) 2005-05-31 2011-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101369864B1 (ko) 2005-08-12 2014-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 그 제조방법
US7935957B2 (en) * 2005-08-12 2011-05-03 Semiconductor Energy Laboratory Co., Ltd. Memory device and a semiconductor device
US7912439B2 (en) 2005-11-25 2011-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and operating method thereof
CN101401209B (zh) * 2006-03-10 2011-05-25 株式会社半导体能源研究所 存储元件以及半导体器件
EP1850378A3 (en) * 2006-04-28 2013-08-07 Semiconductor Energy Laboratory Co., Ltd. Memory device and semicondutor device
US7719001B2 (en) 2006-06-28 2010-05-18 Semiconductor Energy Laboratory Co., Ltd Semiconductor device with metal oxides and an organic compound
US7988057B2 (en) 2006-11-28 2011-08-02 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
KR101485926B1 (ko) * 2007-02-02 2015-02-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억장치
US8283724B2 (en) 2007-02-26 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Memory element and semiconductor device, and method for manufacturing the same
USD645029S1 (en) * 2008-05-09 2011-09-13 Semiconductor Energy Laboratory Co., Ltd. Antenna
USD602922S1 (en) * 2008-05-09 2009-10-27 Semiconductor Energy Laboratory Co., Ltd. Contactless data carrier
WO2009145062A1 (en) 2008-05-16 2009-12-03 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
USD605642S1 (en) * 2008-09-10 2009-12-08 Semiconductor Energy Laboratory Co., Ltd. Contactless data carrier
CN102770903B (zh) * 2010-02-26 2015-10-07 株式会社半导体能源研究所 显示装置及具备该显示装置的电子书阅读器
US9698129B2 (en) 2011-03-18 2017-07-04 Johnson & Johnson Vision Care, Inc. Stacked integrated component devices with energization
US10451897B2 (en) 2011-03-18 2019-10-22 Johnson & Johnson Vision Care, Inc. Components with multiple energization elements for biomedical devices
US8857983B2 (en) 2012-01-26 2014-10-14 Johnson & Johnson Vision Care, Inc. Ophthalmic lens assembly having an integrated antenna structure
US9715130B2 (en) 2014-08-21 2017-07-25 Johnson & Johnson Vision Care, Inc. Methods and apparatus to form separators for biocompatible energization elements for biomedical devices
US10381687B2 (en) 2014-08-21 2019-08-13 Johnson & Johnson Vision Care, Inc. Methods of forming biocompatible rechargable energization elements for biomedical devices
US9793536B2 (en) 2014-08-21 2017-10-17 Johnson & Johnson Vision Care, Inc. Pellet form cathode for use in a biocompatible battery
US10361404B2 (en) 2014-08-21 2019-07-23 Johnson & Johnson Vision Care, Inc. Anodes for use in biocompatible energization elements
US10361405B2 (en) 2014-08-21 2019-07-23 Johnson & Johnson Vision Care, Inc. Biomedical energization elements with polymer electrolytes
US10627651B2 (en) 2014-08-21 2020-04-21 Johnson & Johnson Vision Care, Inc. Methods and apparatus to form biocompatible energization primary elements for biomedical devices with electroless sealing layers
US9599842B2 (en) 2014-08-21 2017-03-21 Johnson & Johnson Vision Care, Inc. Device and methods for sealing and encapsulation for biocompatible energization elements
US9941547B2 (en) 2014-08-21 2018-04-10 Johnson & Johnson Vision Care, Inc. Biomedical energization elements with polymer electrolytes and cavity structures
US9383593B2 (en) 2014-08-21 2016-07-05 Johnson & Johnson Vision Care, Inc. Methods to form biocompatible energization elements for biomedical devices comprising laminates and placed separators
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US10345620B2 (en) 2016-02-18 2019-07-09 Johnson & Johnson Vision Care, Inc. Methods and apparatus to form biocompatible energization elements incorporating fuel cells for biomedical devices

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JP2002026283A (ja) * 2000-06-30 2002-01-25 Seiko Epson Corp 多層構造のメモリ装置及びその製造方法
KR20020074415A (ko) * 2001-03-19 2002-09-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작방법
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Also Published As

Publication number Publication date
CN101044624A (zh) 2007-09-26
US7781758B2 (en) 2010-08-24
WO2006043611A1 (en) 2006-04-27
US20100295034A1 (en) 2010-11-25
KR20070067706A (ko) 2007-06-28
TWI434411B (zh) 2014-04-11
TW200629549A (en) 2006-08-16
JP2011077535A (ja) 2011-04-14
US20080048180A1 (en) 2008-02-28
JP5268197B2 (ja) 2013-08-21
US8227802B2 (en) 2012-07-24

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