TWI434411B - 半導體裝置 - Google Patents
半導體裝置 Download PDFInfo
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- TWI434411B TWI434411B TW094136697A TW94136697A TWI434411B TW I434411 B TWI434411 B TW I434411B TW 094136697 A TW094136697 A TW 094136697A TW 94136697 A TW94136697 A TW 94136697A TW I434411 B TWI434411 B TW I434411B
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- organic compound
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/20—Organic diodes
- H10K10/23—Schottky diodes
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/611—Charge transfer complexes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
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| WO (1) | WO2006043611A1 (enExample) |
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| CN100557813C (zh) | 2004-10-18 | 2009-11-04 | 株式会社半导体能源研究所 | 半导体器件及其驱动方法 |
| KR101258672B1 (ko) | 2004-10-22 | 2013-04-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 |
| US7935958B2 (en) * | 2004-10-22 | 2011-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2006057417A1 (en) * | 2004-11-26 | 2006-06-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR101169262B1 (ko) * | 2004-12-03 | 2012-08-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| EP1854140A4 (en) * | 2005-02-10 | 2008-06-04 | Semiconductor Energy Lab | MEMORY ELEMENT AND SEMICONDUCTOR DEVICE |
| US7926726B2 (en) * | 2005-03-28 | 2011-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Survey method and survey system |
| US7700984B2 (en) | 2005-05-20 | 2010-04-20 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device including memory cell |
| US7868320B2 (en) | 2005-05-31 | 2011-01-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
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| US7935957B2 (en) * | 2005-08-12 | 2011-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and a semiconductor device |
| US7912439B2 (en) | 2005-11-25 | 2011-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and operating method thereof |
| CN101401209B (zh) * | 2006-03-10 | 2011-05-25 | 株式会社半导体能源研究所 | 存储元件以及半导体器件 |
| EP1850378A3 (en) * | 2006-04-28 | 2013-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and semicondutor device |
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| KR101258672B1 (ko) | 2004-10-22 | 2013-04-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 |
| US7935958B2 (en) | 2004-10-22 | 2011-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2006057417A1 (en) | 2004-11-26 | 2006-06-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
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2005
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- 2005-10-13 WO PCT/JP2005/019253 patent/WO2006043611A1/en not_active Ceased
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| Publication number | Publication date |
|---|---|
| CN101044624A (zh) | 2007-09-26 |
| US7781758B2 (en) | 2010-08-24 |
| WO2006043611A1 (en) | 2006-04-27 |
| US20100295034A1 (en) | 2010-11-25 |
| KR20070067706A (ko) | 2007-06-28 |
| KR101258672B1 (ko) | 2013-04-26 |
| TW200629549A (en) | 2006-08-16 |
| JP2011077535A (ja) | 2011-04-14 |
| US20080048180A1 (en) | 2008-02-28 |
| JP5268197B2 (ja) | 2013-08-21 |
| US8227802B2 (en) | 2012-07-24 |
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