JP5268197B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5268197B2
JP5268197B2 JP2010259096A JP2010259096A JP5268197B2 JP 5268197 B2 JP5268197 B2 JP 5268197B2 JP 2010259096 A JP2010259096 A JP 2010259096A JP 2010259096 A JP2010259096 A JP 2010259096A JP 5268197 B2 JP5268197 B2 JP 5268197B2
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Prior art keywords
conductive layer
layer
organic compound
semiconductor device
data
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Expired - Fee Related
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JP2010259096A
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Japanese (ja)
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JP2011077535A (ja
JP2011077535A5 (enExample
Inventor
寛子 安部
裕司 岩城
幹央 湯川
舜平 山崎
康行 荒井
康子 椎名
芳隆 守屋
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2010259096A priority Critical patent/JP5268197B2/ja
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Publication of JP2011077535A5 publication Critical patent/JP2011077535A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/20—Organic diodes
    • H10K10/23—Schottky diodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/611—Charge transfer complexes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
JP2010259096A 2004-10-22 2010-11-19 半導体装置 Expired - Fee Related JP5268197B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010259096A JP5268197B2 (ja) 2004-10-22 2010-11-19 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004308838 2004-10-22
JP2004308838 2004-10-22
JP2010259096A JP5268197B2 (ja) 2004-10-22 2010-11-19 半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2005304375A Division JP4767653B2 (ja) 2004-10-22 2005-10-19 半導体装置及び無線チップ

Publications (3)

Publication Number Publication Date
JP2011077535A JP2011077535A (ja) 2011-04-14
JP2011077535A5 JP2011077535A5 (enExample) 2011-05-26
JP5268197B2 true JP5268197B2 (ja) 2013-08-21

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JP2010259096A Expired - Fee Related JP5268197B2 (ja) 2004-10-22 2010-11-19 半導体装置

Country Status (6)

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US (2) US7781758B2 (enExample)
JP (1) JP5268197B2 (enExample)
KR (1) KR101258672B1 (enExample)
CN (1) CN101044624A (enExample)
TW (1) TWI434411B (enExample)
WO (1) WO2006043611A1 (enExample)

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Publication number Publication date
JP2011077535A (ja) 2011-04-14
TW200629549A (en) 2006-08-16
US8227802B2 (en) 2012-07-24
KR20070067706A (ko) 2007-06-28
TWI434411B (zh) 2014-04-11
US20080048180A1 (en) 2008-02-28
KR101258672B1 (ko) 2013-04-26
WO2006043611A1 (en) 2006-04-27
CN101044624A (zh) 2007-09-26
US20100295034A1 (en) 2010-11-25
US7781758B2 (en) 2010-08-24

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