JP2010533646A5 - - Google Patents

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JP2010533646A5
JP2010533646A5 JP2010513645A JP2010513645A JP2010533646A5 JP 2010533646 A5 JP2010533646 A5 JP 2010533646A5 JP 2010513645 A JP2010513645 A JP 2010513645A JP 2010513645 A JP2010513645 A JP 2010513645A JP 2010533646 A5 JP2010533646 A5 JP 2010533646A5
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JP5421249B2 (ja
JP2010533646A (ja
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JP2010513645A 2007-07-04 2008-07-02 キノイド化合物、ならびに半導体基質材料、電子素子および光電子素子におけるキノイド化合物の使用 Active JP5421249B2 (ja)

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Application Number Priority Date Filing Date Title
DE102007031220.4 2007-07-04
DE102007031220.4A DE102007031220B4 (de) 2007-07-04 2007-07-04 Chinoide Verbindungen und deren Verwendung in halbleitenden Matrixmaterialien, elektronischen und optoelektronischen Bauelementen
PCT/DE2008/001080 WO2009003455A1 (de) 2007-07-04 2008-07-02 Chinoide verbindungen und deren verwendung in halbleitenden matrixmaterialien, elektronischen und optoelektronischen bauelementen

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JP2010533646A JP2010533646A (ja) 2010-10-28
JP2010533646A5 true JP2010533646A5 (enExample) 2013-11-14
JP5421249B2 JP5421249B2 (ja) 2014-02-19

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JP2010513645A Active JP5421249B2 (ja) 2007-07-04 2008-07-02 キノイド化合物、ならびに半導体基質材料、電子素子および光電子素子におけるキノイド化合物の使用

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US (2) US9490432B2 (enExample)
JP (1) JP5421249B2 (enExample)
DE (1) DE102007031220B4 (enExample)
TW (1) TWI473781B (enExample)
WO (1) WO2009003455A1 (enExample)

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